CN105518950B - The method of laser module and assembling laser module - Google Patents
The method of laser module and assembling laser module Download PDFInfo
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- CN105518950B CN105518950B CN201580001570.5A CN201580001570A CN105518950B CN 105518950 B CN105518950 B CN 105518950B CN 201580001570 A CN201580001570 A CN 201580001570A CN 105518950 B CN105518950 B CN 105518950B
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- brazing material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a kind of laser modules.The laser module includes carrier, and semiconductor laser diode (LD) and capacitor are equipped on carrier.Chip area, installation region and the auxiliary area for absorbing remaining brazing material for installing LD via brazing material are provided on the top surface of carrier.Capacitor is mounted on installation region via another brazing material closer to LD.
Description
Technical field
The present invention relates to a kind of laser aid, which includes that semiconductor laser diode (LD) and setting are attached in LD
Close feed-through capacitor.
Background technique
In optical communication system, in order to further increase message capacity, the advanced technology using the phase of signal light becomes
It is prevailing.Such optical communication system is commonly known as coherent communication system.Fig. 7 is schematically shown in coherent communication system
The arrangement of the optical signal source 100 used.Optical signal source 100 shown in Fig. 7 is provided with to be biased by DC power supply 101
LD102 and optical modulator 103.LD 102 emits continuous wave (CW) light L11, and optical modulator 103 modulates the CW light L11, with
Export modulation light L12.Such as such as United States Patent (USP) No.7, disclosed in 362,782 like that, optical signal source 100 installs wavelength sometimes
Tunable LD is as LD 102.
Reference listing
Patent document
Patent document (PTL) 1: United States Patent (USP) No.7,362,782.
Summary of the invention
Technical problem
To generate the CW light with line width as narrow as possible, it is also very desirable to the LD 102 being provided in optical signal source 100.It is folded
Being added in the electrical noise being provided on the bias of LD 102 makes line width be deteriorated.DC power supply 101 inherently causes noise, but bias line
104 superimposed noises, especially high-frequency noise due to electromagnetic interference (EMI) sometimes.The usual band of bias line for supplying DC bias
There is the feed-through capacitor of ground connection.However, feed-through capacitor needs to be connected to LD as closely as possible, because working as LD and feed-through capacitor
Between there are when quite long bias line, there are bias line cause noise.In particular, when optical modulator 103 passes through frequency
When reaching and modulating CW light L11 sometimes more than the modulated signal of 10GHz, between LD and feed-through capacitor there are bias
Line is further preferably as short as possible.
Solve the scheme of technical problem
One aspect of the present invention is related to a kind of laser module, which includes that carrier, LD, capacitor and setting exist
Metal pattern on carrier.Metal pattern includes chip area, installation region and auxiliary area.Chip area and auxiliary area are set
It is equipped with brazing material.LD is mounted on chip area via brazing material.Laser module of the invention is characterized in that: capacitor
It is mounted on installation region via another brazing material separated with brazing material.
Another aspect of the present invention relates to a kind of methods for assembling laser module.This method comprises the following steps: (1) carrying
Metal pattern is formed on body, wherein metal pattern includes chip area, installation region and auxiliary area；(2) only by brazing material
It is deposited on the chip area and auxiliary area of metal pattern；(3) LD is mounted on chip area, while residue is brazed material
Material is absorbed into auxiliary area；(4) another brazing material is applied on installation region so that another brazing material not with
Brazing material contact；And capacitor is mounted in installation region by (5), while another brazing material is folded in installing zone
Between domain and capacitor.
Beneficial effects of the present invention
It can reduce noise.
Detailed description of the invention
Fig. 1 is the plan view of the laser module of first embodiment according to the present invention.
Fig. 2 shows the cross sections of the line II-II interception along Fig. 1.
(A) of Fig. 3 is the plan view for showing the process for assembling laser module according to an embodiment of the present invention, and (B) of Fig. 3
It is the plan view for showing the subsequent process of process of Fig. 3 (A).
(A) of Fig. 4 is the plan view of the process of the subsequent assembling laser module of the process shown in Fig. 3 (B) that shows, and schemes
4 (B) is the plan view for showing the subsequent process of process of Fig. 4 (A).
Fig. 5 shows the cross section of conventional laser component.
Fig. 6 is equipped with the plan view of the laser module of laser module shown in FIG. 1.
Fig. 7 schematically shows the circuit diagram of the optical transmitting set of coherent communication system.
Specific embodiment
Next, with reference to the accompanying drawings to being described according to some embodiments of the present invention.In the description of the figures, each other
The same or similar number or symbol refer to mutually the same or similar element, and are not repeated.
Fig. 1 is the plan view of the laser module of first embodiment according to the present invention, and Fig. 2 shows occur along Fig. 1
The cross section of the laser module 1 of line II-II interception.As depicted in figs. 1 and 2, the laser module 1 of the present embodiment is provided with carrier 2
(it includes multiple metal patterns 3 to 11 on the top surface of carrier 2), semiconductor laser diode (LD) 12, thermistor
Device 13, capacitor 14 and more piece-root grafting zygonema W1 to W9.
Can the carrier 2 made of the inorganic material such as aluminium oxide (AlOx), aluminium nitride (AlN) be provided with positioned at its top
Metal pattern 3 to 11 on the 2a of face.LD 12, thermal resistor 13 and capacitor 14 are installed on metal pattern, and are engaged
Metal pattern 3 to 11 is connected to LD 12 and thermal resistor 13 by line W1 to W9.Although not shown in FIG. 2, carrier 2
Back metal can be set on the back side 2b opposite with top surface 2a, wherein back metal can be grounding electrode.
Metal pattern 3 to 11 can be by coating or being coated with the folded of golden (Au) and/or platinum (Pt) in metal laminated top
Layer metal is made.The present embodiment is provided with the metal pattern 3 to 5 of the lamination metal with titanium (Ti), platinum (Pt) and golden (Au).Respectively
A metal pattern 3 to 11 is to LD 12 for electric power, bias and the bias current applied to heater (will be described later).Specifically
For, metal pattern 3 provides ground connection, and metal pattern 4 supplies bias current.Metal pattern 3 (that is, grounding pattern) includes core
Panel region 3a, installation region 3b, auxiliary area 3c and pad 3d.LD 12 is installed on chip area 3a.From chip area 3a
The installation region 3b for being roughly parallel to auxiliary area 3c and extending is equipped with capacitor 14.Pad 3d is connected to the outer of laser module
Portion, to provide earthing potential.
The LD 12 of the present embodiment belongs to the type of so-called tunable wave length LD, and tunable wave length LD, which has, to be parallel to
The optical waveguide being provided in LD 12 and the optical axis extended.LD 12 can be from the end face output light vertical with optical axis, the wave of the light
Length can be tuned by supplying bias and/or bias current via metal pattern 3 to 11.LD 12 is mounted on via brazing material 15
On chip area 3a.Fig. 1 indicates brazing material 15 with the shadow region for covering entire chip area 3a and auxiliary area 3c.Soldering
Material 15 can be the solder made of eutectic alloy or electroconductive resin.LD 12 can be set via the soldering on metal pattern 3
The back metal of material ground connection.
Each LD 12 may include along region semiconductor optical amplifier (SOA) of the optical axis of LD 12, gain regions and
Tune region.The SOA for amplifying the light generated by gain regions includes electrode 21, and bias current is supplied in SOA.Electrode 21 passes through
Closing line W1 and W2 are connected to metal pattern 5.It generates and the gain regions of the light amplified in SOA is provided with electrode 22, it will
Bias current is supplied in gain regions.Electrode 22 is connected to metal pattern 4 by closing line W3 and W4.Gain regions can be tuned at
The tuning region of the wavelength of the light of middle generation is provided with electrode 23 to 26, and electrode 23 to 26 is distinguished by re-spective engagement line W5 to W8
It is connected to metal pattern 6 to 9.The electrode 26 extended in entirely tuning region along optical axis is total by other electrodes 23 to 25
With.Although being not shown in Fig. 1, several heaters are provided between electrode 23 to 25 and common electrode 26.Metal pattern 6
Electric power is provided to 8 to each heater, to be tuned at the wavelength of the light generated in gain regions.Therefore, it can tune via end
Wavelength of the face from the light exported of LD 12.
Thermal resistor 13 can sense the temperature of the top surface 2a of carrier 2.It can be sensed according to thermal resistor 13
Top surface 2a temperature come control be supplied to tuning region in each heater electric power.One electrode of thermal resistor 13
It is contacted towards metal pattern 10 and with metal pattern 10, and another electrode of thermal resistor 13 is connected to via closing line W9
Another metal pattern 11.
Capacitor 14 belongs to the type of feed-through capacitor, which is connected to metal in a manner of being parallel to LD12
Between pattern 3 and 4.For the setting of capacitor 14 there are two electrode, one of electrode is mounted on the installation region 3b of metal pattern 3
On, and another electrode is mounted on metal pattern 4 via brazing material 16 and 17 respectively.For installing the soldering of capacitor 14
Material 16 and 17 preferably has the fusion temperature than another brazing material 15 for being mounted on LD 12 on chip area 3a
Low fusion temperature.In the present embodiment, even if after installing capacitor 14, brazing material 16 on the 3b of installation region with
Brazing material 15 on chip area 3a separates (spaced apart), that is to say, that the top surface of metal pattern 3 is in brazing material 15 and 16
Between expose.
Next, by (B) of (A) to Fig. 4 of Fig. 3 of the plan view of reference supports 2 to assembling laser module 1 process into
Row description.
Firstly, the process is on the top surface 2a of carrier 2 as shown in (A) (that schematically shows metal patterns) of Fig. 3
Form metal pattern 3 and 4.The process can by pattern via such as metal evaporation be deposited on metal on the 2a of top surface or
Lamination metal can form figure by selective deposition metal or lamination metal to form metal pattern 3 and 4 or the process
The metal 3 and 4 of case.Next, the process property of can choose so that tin (Sn) and golden (Au) is vaporized on chip area 3a and auxiliary
It helps on the 3c of region as brazing material 15 ((B) of Fig. 3).The ingredient for being deposited on the gold (Au) in the AuSn film on metal pattern can
Think about 70%, and the thickness of AuSn film is about 5 μm, it is therefore preferable to 4 μm to 6 μm.
Then, LD 12 is mounted on chip area 3a ((A) of Fig. 4).Specifically, carrier 2 is heated to be more than
LD 12 can be placed on the brazing material 15 so heated by 280 DEG C, preferably up to 280 DEG C to 300 DEG C, the assembling process
On.Brazing material 15, which can not only be operated as adhesive, fixes LD 12, but also can fix from LD 12 to ground connection and scheme
The conductive path of case 3.Auxiliary area 3c from chip area 3a can effectively absorb from metal pattern 3 and LD 12 it
Between gap exudation remaining solder 15 so that exudation brazing material because brazing material surface tension without invade installation
In the 3b of region.For the brazing material 15 of fusing, installation region 3b shows the wetability lower than auxiliary area 3c.Cause
This, the extra brazing material 15 oozed out from gap rests in region present in brazing metal 15.
Then, which is assembled in metal pattern 3 ((B) of Fig. 4) for capacitor 14.Specifically, by other solderings
Material 16 and 17 is melted and is diffused on corresponding metal pattern 3b and 4；Capacitor 14 is mounted on to the soldering material so spread
On material 16 and 17.Fusing and dissipation period in brazing material 16, brazing material 16 are effectively prevented and are previously used for installing
LD 12 and spread brazing material 15 mix.In instances, the solder made of tin-antimony (SnSb) selected and
It is melted on metal pattern 3b and 4 at a temperature of more than 240 DEG C (preferably 260 DEG C).Since installation capacitor 14 makes temperature
It reduces, the brazing material 15 for being accordingly used in installation LD 20 melts not at all.During such description, two kinds of soldering materials
Material 15 and 16 is independently spread in respective step, that is to say, that brazing material 15 is spread in chip area 3a first, then
Another brazing material 16 is spread in installation region.After installing capacitor 14, closing line W3 extends to metal from LD 12
Pattern 4, closing line W3 constitute the parallel circuit of LD 12 and capacitor 14 between metal pattern 3 and 4.
Next, by the advantages of laser module 1 is shown is described in a manner of being compared with conventional arrangement.Fig. 5 shows
Provide the cross section of the laser module 200 routinely arranged about LD 12 and capacitor 14.In routinely arrangement, although not
It is clearly shown in Fig. 5, but metal pattern 3 (especially chip area 3b) is without auxiliary area 3c, it is intended that work as LD
12 are arranged when on brazing metal 15, and the remainder 15a of brazing metal 15 oozes out in all directions as shown in Figure 5.
Specifically, the LD 12 of the present embodiment is disposed with the region SOA, gain regions and tuning region, which means that LD along its optical axis
12 have flat shape elongated enough.When this elongated chips are welded on carrier 22 by chip, enough solderings are needed
Material 15 (that is, eutectic solder) is securely engaged chip.As a result, relatively large amount of residue solder seeps in all directions
Out.In conventional laser component, needing to set sizable space around the metal pattern of chip area 3a, (width is greater than sometimes
100 μm) come far from chip area 3a, with for preventing the solder of exudation from contacting with metal pattern, this is inevitably expanded
The size of carrier 2.In addition, the remaining solder of this exudation forces the space increased between LD 12 and capacitor 14, and this is from LD
It is unfavorable from the viewpoint of 12 high speed operation.
On the other hand, the LD component 1 of the present embodiment is provided with the auxiliary area close to chip area 3a in metal pattern 3
3c.Auxiliary area 3c (at auxiliary area 3c, brazing material 15 is spread in advance when installing LD 12) can effectively absorb surplus
Remaining solder, that is, gap exudation of the brazing material 15 between LD 12 and metal pattern 3, so that remaining solder 15 be prevented to be diffused into
It is contacted in the 3b of installation region and with the metal pattern around chip area 3a.Therefore, the metal pattern around chip area 3a can
To be placed closer to chip area 3a.
In addition, the assembling process of LD component is using another brazing material 16 and 17 (i.e. another eutectic alloy) come will be electric
Container 14 is mounted on the 3b of installation region.Another brazing material 16 and 17 has than the brazing material 15 for installing LD 12
Low-melting fusing point.Therefore, brazing material 16 can diffuse into the brazing material 15 for sufficiently closing to spread in advance, and be brazed
Metal 15 or mounted LD 12 are not influenced by the process of installation capacitor 14.Therefore, capacitor 14 can be mounted to enough
Close to LD 12, specifically, capacitor 14 and LD 12 are at a distance of 5 μm to 10 μm, this shows the high speed operation for LD 12
Advantage.
Next, will to using laser module 1 (laser module of laser module 1 is especially installed) some examples into
Row description.Fig. 6 is the plan view for being exaggerated the major part for the laser module 50 for being equipped with laser module 1.Laser module 50 wraps
It includes: packaging part 51, laser module 1, lens 52, thermoelectric (al) cooler (TEC) 53 and terminal 54.
Next, will to using laser module 1 (laser module of laser module 1 is especially installed) some examples into
Row description.Fig. 6 is the plan view for being equipped with the laser module 50 of laser module 1.Other than laser module 1, laser module 50
Further include wavelength locker, the wavelength locker include the first beam splitter (BS) 61, second beam splitter 62, wavelength filter 64,
First photodiode (PD) 71 and the second photodiode 72.
Laser module 1 is mounted on thermoelectric (al) cooler (TEC) 53 via the carrier 2 with collimation lens 52, and via
Feedthrough 54 is connected to external electrical, and feedthrough 54 includes multiple ends with 3 to 10 wire bonding of metal pattern on carrier 2
Son.In addition, wavelength locker is mounted on another TEC 63 via carrier.Laser module 1 with TEC 53 and have another
The wavelength locker of TEC is mounted in shell 51.
The light exported from LD 12 lens 52 collimated first collimate, subsequently into the first BS61.First 62 couples of BS light into
Row beam splitting, a part of beam splitting light proceeds to output port, and about 90 ° of another part beam splitting light has been bent by the first BS 61
Proceed to the 2nd BS.The splitting ratio of first BS is set to about 95:5, that is, and about the 95% of collimated light proceeds to output port, and
Collimated light only 5% proceeds to the 2nd BS 62.
2nd BS 62 is further split light with the ratio of about 50:50.A part of beam splitting light proceeds to the first PD,
And remaining beam splitting light proceeds to wavelength filter 64, wavelength filter 64 is inherently associated with specific transmissivity.2nd PD 72
Detect the light exported from wavelength filter 64.On the other hand, the first PD 71 can detecte the original beam exported from LD 12, this
Mean that light is that any specific optical characteristics is exported and be not affected by from LD 12 to influence.Therefore, by calculating the 2nd PD's 72
The ratio of output and the output of the first PD 71, can determine the actual transmission of wavelength filter 64.Pass through what will be achieved in that
Transmissivity is compared with the actual transmission of wavelength filter, can be accurately determined currently from the wave of the light exported of LD 12
It is long.
It is adjustable to be supplied to LD when the current wavelength of LD 12 determining in this way and the target wavelength difference of LD 12
The electric power of 12 bias and the heater supplied to LD 12, so that current wavelength becomes consistent with target wavelength or close to mesh
Mark wavelength.
Wavelength filter 64 can be so-called etalon filter, which inherently shows periodicity
Transmissivity.Target wavelength is set as becoming larger the point at place in the slope of the periodic transmission of etalon filter, LD's 12
Current wavelength can be accurately matched because of the increase gain of above-mentioned feedback loop with target wavelength.
Even if in laser module 50, capacitor 14 can also be mounted to sufficiently close in the 3b of installation region LD 12 and
Far from chip area, this makes the size of carrier 2 sufficiently small.Lesser carrier 2 leads to the smaller thermal capacity of TEC 53.Therefore,
It can accelerate current wavelength converging to target wavelength.
Although each specific embodiment of the invention, the skill of this field are described herein for purposes of illustration
Art personnel would be apparent to many modifications and variations.For example, the auxiliary area 3c for absorbing remaining brazing material 15 is not total
It is to be drawn along direction identical with the direction of installation region 3b from chip area 3a.When auxiliary area 3c is perpendicular to chip area 3a
Facing one direction extend and installation region 3b be also perpendicularly to chip area 3a but towards and aforementioned contrary other direction
When extension, that is to say, that when auxiliary area 3c is towards installation region 3b and chip area 3a is located at auxiliary area 3c and installing zone
When between the 3b of domain, capacitor 14 can be mounted to closer to LD 12.
The embodiment uses the capacitor 14 of the type with so-called chip capacitor, two electrodes of the chip capacitor
Laterally it is arranged.However, laser module 1 also can be used the capacitor of the type with chip capacitor, the two of the capacitor
A electrode is vertically arranged.For such arrangement, chip capacitor 14 is mounted on as follows on the 3b of installation region: chip
The bottom electrode of capacitor 14 towards and contact installation region 3b, and the top electrodes of chip capacitor 14 pass through closing line and connect
To metal pattern 4.Therefore, appended claims are intended to cover fall into true spirit and scope of the present invention all and such repair
Change and changes.
Claims (12)
1. a kind of laser module, comprising:
Carrier；
Metal pattern, setting on the carrier, the metal pattern include chip area, installation region, bias current region and
Auxiliary area, the chip area and the auxiliary area are provided with brazing material；
Semiconductor laser diode (LD), is mounted on the chip area via the brazing material；
Capacitor is mounted on the bias current region and the peace via another brazing material separated with the brazing material
It fills on region；
Bias current is supplied in the gain regions of the semiconductor laser diode by electrode；And
Closing line connects the electrode and the bias current region.
2. laser module according to claim 1,
Wherein, the auxiliary area is roughly parallel to the installation region and extends.
3. laser module according to claim 1,
Wherein, another brazing material has the low-melting fusing point than the brazing material.
4. laser module according to claim 3,
Wherein, the brazing material is golden tin (AuSn), and another brazing material is tin antimony (SnSb).
5. laser module according to claim 1,
Wherein, the metal pattern is stacked with titanium (Ti), platinum (Pt) and gold (Au).
6. laser module according to claim 1,
Wherein, the carrier is made of aluminium nitride.
7. a kind of method for assembling laser module, includes the following steps:
Metal pattern is formed on carrier, the metal pattern includes chip area, installation region, bias current region and auxiliary region
Domain；
Brazing material is only deposited on the chip area and the auxiliary area of the metal pattern；
Semiconductor laser diode (LD) is mounted on the chip area, while remaining brazing material being absorbed into described auxiliary
It helps in region；
Another brazing material is applied on the bias current region and the installation region, so that the another kind brazing material
It is not contacted with the brazing material；
Capacitor is mounted in the bias current region and the installation region, while another brazing material being folded in
Between the installation region and the capacitor；
Bias current is supplied in the gain regions of the semiconductor laser diode by electrode；And
The electrode and the bias current region are connected by closing line.
8. according to the method described in claim 7,
Wherein, the electricity is installed in the at a temperature of execution that the temperature than executing the process for installing the semiconductor laser diode is low
The process of container.
9. according to the method described in claim 8,
Wherein, the brazing material is golden tin (AuSn), and
The process for installing the semiconductor laser diode includes being heated to the carrier more than 280 DEG C and by the semiconductor
Laser diode is placed on the process on the brazing material.
10. according to the method described in claim 9,
Wherein, another brazing material is tin antimony (SnSb), and
The process for installing the capacitor includes being heated to the carrier more than 240 DEG C but lower than 280 DEG C and by the capacitor
Device is placed on the process on another brazing material.
11. according to the method described in claim 7,
Wherein, deposit the brazing material process include be deposited 4 μm to 6 μm thickness the brazing material process.
12. according to the method described in claim 7,
Wherein, the process for applying another brazing material comprises the following processes:
It executes a process in following procedure: the carrier is heated to than carrying out installing described half on the chip area
The process of the low temperature of the temperature of the process of conductor Laser diode；And a small amount of another brazing material is placed on institute
The process on installation region is stated, and
A small amount of another brazing material is dispersed in the installation region so that the another kind brazing material not with institute
State brazing material contact.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-162643 | 2014-08-08 | ||
| JP2014162643A JP6542514B2 (en) | 2014-08-08 | 2014-08-08 | Semiconductor laser device |
| PCT/JP2015/003966 WO2016021203A1 (en) | 2014-08-08 | 2015-08-06 | Laser assembly and method to assemble laser assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105518950A CN105518950A (en) | 2016-04-20 |
| CN105518950B true CN105518950B (en) | 2018-12-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580001570.5A Active CN105518950B (en) | 2014-08-08 | 2015-08-06 | The method of laser module and assembling laser module |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6542514B2 (en) |
| CN (1) | CN105518950B (en) |
| WO (1) | WO2016021203A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6794140B2 (en) * | 2016-05-23 | 2020-12-02 | オプト エレクトロニクス ソリューションズ | Optical transmitter and optical module including it |
| DE102017108050B4 (en) | 2017-04-13 | 2022-01-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | semiconductor radiation source |
| JP7097169B2 (en) * | 2017-10-27 | 2022-07-07 | 古河電気工業株式会社 | Optical element module and evaluation method of optical element module |
| JP2019087656A (en) * | 2017-11-08 | 2019-06-06 | 三菱電機株式会社 | Optical module and method of manufacturing the same |
| US11811191B2 (en) * | 2019-08-22 | 2023-11-07 | Sumitomo Electric Device Innovations, Inc. | Optical semiconductor device and carrier |
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| JP3889933B2 (en) * | 2001-03-02 | 2007-03-07 | シャープ株式会社 | Semiconductor light emitting device |
| JP4349552B2 (en) * | 2001-12-26 | 2009-10-21 | 株式会社Ｋｅｌｋ | Peltier element thermoelectric conversion module, manufacturing method of Peltier element thermoelectric conversion module, and optical communication module |
| US7144788B2 (en) * | 2004-02-19 | 2006-12-05 | Sumitomo Electric Industries, Ltd. | Method for manufacturing a transmitting optical sub-assembly with a thermo-electric cooler therein |
| JP4772560B2 (en) * | 2006-03-31 | 2011-09-14 | 住友電工デバイス・イノベーション株式会社 | Optical semiconductor device and control method thereof |
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| JP2012119637A (en) * | 2010-12-03 | 2012-06-21 | Sumitomo Electric Device Innovations Inc | Manufacturing method of optical semiconductor device |
| US8821042B2 (en) * | 2011-07-04 | 2014-09-02 | Sumitomo Electic Industries, Ltd. | Optical module with lens assembly directly mounted on carrier by soldering and laser diode indirectly mounted on carrier through sub-mount |
| JP2013074187A (en) * | 2011-09-28 | 2013-04-22 | Oki Electric Ind Co Ltd | Mode synchronous semiconductor laser device and control method for mode synchronous semiconductor laser |
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| JP2016039304A (en) | 2016-03-22 |
| WO2016021203A1 (en) | 2016-02-11 |
| CN105518950A (en) | 2016-04-20 |
| JP6542514B2 (en) | 2019-07-10 |
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