WO2016021203A1 - Laser assembly and method to assemble laser assembly - Google Patents

Laser assembly and method to assemble laser assembly Download PDF

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Publication number
WO2016021203A1
WO2016021203A1 PCT/JP2015/003966 JP2015003966W WO2016021203A1 WO 2016021203 A1 WO2016021203 A1 WO 2016021203A1 JP 2015003966 W JP2015003966 W JP 2015003966W WO 2016021203 A1 WO2016021203 A1 WO 2016021203A1
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WO
WIPO (PCT)
Prior art keywords
brazing material
area
mounting
laser assembly
capacitor
Prior art date
Application number
PCT/JP2015/003966
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English (en)
French (fr)
Inventor
Yoshiki Oka
Keiji Nakazawa
Mitsuyoshi Miyata
Hiromitsu Kawamura
Original Assignee
Sumitomo Electric Device Innovations, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Device Innovations, Inc. filed Critical Sumitomo Electric Device Innovations, Inc.
Priority to CN201580001570.5A priority Critical patent/CN105518950B/zh
Publication of WO2016021203A1 publication Critical patent/WO2016021203A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure

Definitions

  • the present application relates to a laser apparatus comprising a semiconductor laser diode (LD) and a bypassing capacitor disposed in a vicinity of the LD.
  • LD semiconductor laser diode
  • FIG. 7 schematically illustrates an arrangement of an optical signal source 100 used in the coherent communication system.
  • the optical signal source 100 shown in Fig. 7 provides an LD 102 biased with a DC power supply 101 and an optical modulator 103.
  • the LD 102 emits continuous-wave (CW) light L11, and the optical modulator 103 modulates the CW light L11 to output a modulated light L12.
  • the optical signal source 100 sometimes installs a wavelength tunable LD as the LD 102 disclosed in, for instance, the United States Patent No. 7,362,782.
  • the LD 102 implemented in the optical signal source 100 is strongly requested to generate the CW light with line width as narrower as possible. Electrical noises superposed on the bias provided to the LD 102 degrade the line width.
  • the DC power supply 101 inherently causes noises, but the bias line 104 sometimes superposes noises by the electro-magnetic interference (EMI), in particular, noises with high frequencies.
  • EMI electro-magnetic interference
  • a bias line for supplying a DC bias usually accompanies with bypassing capacitors against the ground.
  • the bypassing capacitor is necessary to be connected to the LD as close as possible because, when a substantial bias line is left between the LD and the bypassing capacitor, the left bias line causes noises.
  • the optical modulator 103 modulates the CW light L11 by modulation signals whose frequency reaches and sometimes exceeds 10 GHz
  • the left bias line between the LD and the bypassing capacitor is further preferable as short as possible.
  • One aspect of the present application relates to a laser assembly that comprises a carrier, a metal pattern provided on the carrier, an LD, and a capacitor.
  • the metal pattern includes a die area, a mounting area, and an auxiliary area.
  • the die area and the auxiliary area are provided with a brazing material.
  • the LD is mounted on the die area through the brazing material.
  • a feature of the laser assembly of the present application is that the capacitor is mounted on the mounting area through another brazing material that is apart from the brazing material.
  • Another aspect of the present application relates to a method to assemble a laser assembly.
  • the method includes steps of: (1) forming a metal pattern on a carrier, where the metal pattern includes a die area, a mounting area, and an auxiliary area; (2) depositing a brazing material only on the die area and the auxiliary area of the metal pattern; (3) mounting an LD on the die area as absorbing a surplus brazing material in the auxiliary area; (4) applying another brazing material on the mounting area so as not to be in contact with the brazing material; and (5) mounting a capacitor on the mounting area as interposing the another brazing material between the mounting area and the capacitor.
  • Fig. 1 is a plan view of a laser assembly according to the first embodiment of the present application.
  • Fig. 2 shows a cross section taken along the ling II-II denoted in Fig. 1.
  • Fig. 3(A) is a plan view showing a process to assemble the laser assembly according to an embodiment of the present application, and
  • Fig. 3(B) is a plan view showing a process subsequent to the process of Fig. 3(A).
  • Fig. 4(A) is a plan view showing a process to assembly the laser assembly subsequent to the process shown in Fig. 3(B), and
  • Fig. 4(B) is a plan view of a process subsequent to the process shown in Fig. 4(A).
  • Fig. 5 shows a cross section of a conventional laser assembly.
  • Fig. 6 is a plan view of a laser module that implements a laser assembly shown in Fig. 1.
  • Fig. 7 schematically illustrates a circuit diagram of an optical transmitter for a coherent communication
  • Fig. 1 is a plan view of a laser assembly according to the first embodiment of the present invention
  • Fig. 2 shows a cross section of the laser assembly 1 taken along the ling II-II appearing in Fig. 1.
  • the laser assembly 1 of the present embodiment provides a carrier 2 including a plurality of metal patterns, 3 to 11, on a top surface thereof, a semiconductor laser diode (LD) 12, a thermistor 13, a capacitor 14, and a plurality of bonding wires, W1 to W9.
  • LD semiconductor laser diode
  • the carrier 2 which may be made of inorganic material such as aluminum oxide (AlOx), aluminum nitride (AlN), and so on, provides the metal patterns, 3 to 11, on a top surface 2a thereof.
  • the LD 12, the thermistor 13, and the capacitor 14 are mounted on the metal patterns, and the bonding wires, W1 to W9, connect the metal patterns, 3 to 11, to the LD 12 and the thermistor 13.
  • the carrier 2 may provide a back metal on the back surface 2b opposite to the top surface 2a, where the back metal may be a ground electrode.
  • the metal patterns, 3 to 11, may be made of stacked metal coated or plated with gold (Au) and/or platinum (Pt) in the top of the metal stack.
  • the present embodiment provides the metal patterns, 3 to 5, with stacked metals of titanium (Ti), platinum (Pt), and gold (Au).
  • Respective metal patterns, 3 to 11, supply electronic power for heaters, which will be described later, bias voltages, and bias currents to the LD 12.
  • the metal pattern 3 provides the ground, while, the metal pattern 4 supplies the bias current.
  • the metal pattern 3, namely the ground pattern comprises die area 3a, a mounting area 3b, an auxiliary area 3c, and a pad 3d.
  • the die area 3a mounts the LD 12 thereon.
  • the mounting area 3b which extends from the die area 3a substantially in parallel to the auxiliary area 3c, mounts the capacitor 14.
  • the pad 3d is connected to the outside of the laser assembly to provide the ground potential.
  • the LD 12 of the present embodiment has a type of, what is called, a wavelength tunable LD having an optical axis extending in parallel to an optical waveguide implemented within the LD 12.
  • the LD 12 may output light, whose wavelength may be tuned by supplying the bias voltage and/or the bias current through the metal patterns, 3 to 11, from the facet perpendicular to the optical axis.
  • the LD 12 is mounted on the die area 3a through a brazing material 15.
  • Fig. 1 denotes the brazing material 15 by hatched area that covers the whole die area 3a and the auxiliary area 3c.
  • the brazing material 15 may be a solder made of eutectic metal or electrically conductive resin.
  • the LD 12 may provide a back metal to be grounded through the brazing material on the metal pattern 3.
  • the LD 12 may include a semiconductor optical amplifier (SOA) region, a gain region, and a tuning region along the optical axis thereof.
  • SOA semiconductor optical amplifier
  • the SOA which amplifies light generated by the gain region, includes an electrode 21 to supply a bias current into the SOA.
  • the electrode 21 is connected to the metal pattern 5 by bonding wires, W1 and W2.
  • the gain region which generates light to be amplified in the SOA, provides an electrode 22 to supply a bias current into the gain region.
  • the electrode 22 is connected to the metal pattern 4 through bonding wires, W3 and W4.
  • the tuning region which may tune the wavelength of the light generated in the gain region, provides electrodes, 23 to 26, each connected to the metal patterns, 6 to 9, by respective bonding wires, W5 to W8.
  • the electrode 26 extending along the optical axis within the whole tuning region is common to other electrodes, 23 to 25. Although not shown in Fig. 1, several heaters are provided between the electrodes, 23 to 25, and the common electrode 26.
  • the metal patterns, 6 to 8, supply the power to respective heaters to tune the wavelength of the light generated in the gain region. Thus, the wavelength of the light output from the LD 12 through the facet may be tuned.
  • the thermistor 13 may sense a temperature of the top surface 2a of the carrier 2.
  • the power supplied to respective heaters in the tuning region may be controlled depending on the temperature of the top surface 2a sensed by the thermistor 13.
  • the thermistor 13 in one electrode thereof faces and comes in contact with the metal pattern 10, and in another electrode thereof is connected to another metal pattern 11 through the bonding wire W9.
  • the capacitor 14 is a type of a bypassing capacitor connected in parallel to the LD 12 between the metal patterns, 3 and 4.
  • the capacitor 14 provides two electrodes, one of which is mounted on the mounting area 3b of the metal pattern 3, while, the other is mounted on the metal pattern 4 each through respective brazing materials, 16 and 17.
  • the brazing materials, 16 and 17, for mounting the capacitor 14 preferably has a melting temperature lower than a melting temperature of the other brazing material 15 for mounting the LD 12 onto the die area 3a.
  • the former brazing material 16 on the mounting area 3b is apart from the latter brazing material 15 on the die area 3a even after the mount of the capacitor 14, that is, the metal pattern 3 is exposed in the top surface thereof between the brazing materials, 15 and 16.
  • the process forms metal patterns, 3 and 4, on the top surface 2a of the carrier 2 as shown in Fig. 3(A) which schematically shows the metal patterns.
  • the process may form the metal patterns, 3 and 4, by patterning a metal or stacked metals deposited on the top surface 2a by, for instance, the metal evaporation, or may form patterned metals, 3 and 4, by the selective deposition of a metal or stacked metals.
  • the process may selectively evaporate tin (Sn) and gold (Au) on the die area 3a and the auxiliary area 3c as the brazing material 15 (Fig. 3B).
  • the AuSn film deposited on the metal pattern may have the composition of gold (Au) to be about 70 % and a thickness thereof around 5 ⁇ m, preferably 4 to 6 ⁇ m.
  • the LD 12 is mounted on the die area 3a (Fig. 4A). Specifically, heating the carrier 2 over 280 °C, preferably up to 280 to 300 °C, the assembling process may place the LD 12 on thus heated brazing material 15.
  • the brazing material 15 may operate not only as an adhesive to fix the LD 12 but to secure an electrically conductive path from the LD 12 to the ground pattern 3.
  • the auxiliary area 3c attributed to the die area 3a may effectively absorb surplus solder 15 oozing out from a gap between the metal pattern 3 and the LD 12 such that oozed brazing material does not invade into the mounting area 3b due to the surface tension of the brazing material.
  • the mounting area 3b shows lesser wettability for the melted brazing material 15 compared with the auxiliary area 3c. Accordingly, the surplus brazing material 15 oozed out from the gap stays within the area where the brazing metal 15 exists.
  • the process assembles the capacitor 14 on the metal pattern 3 (Fig. 4B). Specifically, melting and spreading other brazing materials, 16 and 17, on respective metal patterns, 3b and 4; the capacitor 14 is mounted on thus spread brazing materials, 16 and 17. During the melt and the spread of the brazing materials 16, the brazing material 16 is effectively prevented from merging together with the brazing material 15 spread in advance for mounting LD 12.
  • solder made of tin-antimony (SnSb) is selected and melted at a temperature over 240 °C, preferably 260 °C, on the metal patterns 3b and 4. Because of the lowered temperature for mounting the capacitor 14, the former brazing material 15 for mounting the LD 20 is not melted at all.
  • brazing material 15 is first spread in the die area 3a then the other brazing material 16 is spread in the mounting area.
  • the bonding wire W3 is extended from the LD 12 to the metal pattern 4, which configures a parallel circuit of the LD 12 and the capacitor 14 between the metal patterns, 3 and 4.
  • Fig. 5 shows a cross section of a laser assembly 200 having a conventional arrangement with respect to the LD 12 and the capacitor 14.
  • the metal pattern 3, especially the die area 3b does not accompany with the auxiliary area 3c, which means that, when the LD 12 is set on the brazing metal 15, surplus portion 15a thereof oozes in all directions as shown in Fig. 5.
  • the LD 12 of the present embodiment arranges the SOA region, the gain region, and the tuning region along the optical axis thereof, which means that the LD 12 has an enough slender plane shape.
  • the LD assembly 1 of the present embodiment provides the auxiliary area 3c next to the die area 3a in the metal pattern 3.
  • the auxiliary area 3c where the brazing material 15 is spread in advance to the mount of the LD 12, may effectively absorb the surplus solder, namely, the brazing material 15 oozed out from the gap between the LD 12 and the metal pattern 3 so as to prevent the surplus solder 15 from spreading into the mounting area 3b and coming in contact with the metal patterns surrounding the die area 3a. Accordingly, the metal patterns surrounding the die area 3a may be put closer to the die area 3a.
  • the assembling process of the LD assembly uses another brazing material, 16 and 17, namely, another eutectic alloy for mounting the capacitor 14 on the mounting area 3b.
  • the other brazing material, 16 and 17, has the melting point lower than the melting point of the former brazing material 15 to mount the LD 12.
  • the brazing material 16 may be spread close enough to the brazing material 15 spread in advance, and the brazing metal 15, or the mounted LD 12, is not influenced by the process to mount the capacitor 14.
  • the capacitor 14 is able to be mounted close enough to the LD 12, specifically, within 5 to 10 ⁇ m from the LD 12, which shows an advantage for the high speed operation of the LD 12.
  • Fig. 6 is a plan view magnifying a primary portion of the laser module 50 installing the laser assembly 1.
  • the laser module 50 includes a package 51, the laser assembly 1, a lens 52, a thermo-electric cooler (TEC) 53, and a terminal 54.
  • TEC thermo-electric cooler
  • Fig. 6 is a plan view of the laser module 50 installing the laser assembly 1.
  • the laser module 50 includes, in addition to the laser assembly 1, a wavelength locker including first and second beam splitters (BS), 61 and 62, a wavelength filter 64, and first and second photodiodes (PD), 71 and 72.
  • BS beam splitters
  • PD photodiodes
  • the laser assembly 1 is mounted on a thermo-electric cooler (TEC) 53 through the carrier 2 accompanied with a collimating lens 52 and electrically communicate with the outside through a feedthrough 54 that includes a plurality of terminals wire-bonded with the metal patterns, 3 to 10, on the carrier 2.
  • the wavelength locker is mounted on another TEC 63 through a carrier.
  • the laser module 1 with the TEC 53 and the wavelength locker with another TEC are installed within a housing 51.
  • the light output from the LD 12 is first collimated by the collimating lens 52, then, enters the first BS 61.
  • the first BS 62 splits the light, one of split light goes to the output port, while, the other of the split light, which is bent by about 90° by the first BS 61 goes to the second BS.
  • the split ratio of the first BS is set to be around 95:5, namely, about 95 % of the collimated light goes to the output port and only 5 % goes ahead to the send BS 62.
  • the second BS 62 further splits the light by about 50:50.
  • One of the split light goes to the first PD, while, the rest goes to the wavelength filter 64 which inherently has specific transmittance.
  • the second PD 72 detects the light output from the wavelength filter 64.
  • the first PD 71 may detect raw beam output from the LD 12, which means that the light output from the LD 12 but not affected from any specific optical characteristic.
  • the practical transmittance of the wavelength filter 64 may be determined. Comparing thus obtained transmittance with the practical transmittance of the wavelength filter, the wavelength of the light currently output from the LD 12 may be precisely determined.
  • the biases supplied to the LD 12 and the power also supplied to the heaters of the LD 12 may be adjusted such that the current wavelength becomes coincident with, or closer to, the target wavelength.
  • the wavelength filter 64 may be, what is called, an etalon filter that inherently shows a periodic transmittance. Setting the target wavelength to be a point at which the periodic transmittance of the etalon filter in a slope thereof becomes large, the current wavelength of the LD 12 may be precisely matched with the target wavelength because of the increased gain of the feedback loop described above.
  • the capacitor 14 may be mounted enough closer to the LD 12 in the mounting area 3b but apart from the die area, which enables the side of the carrier 2 small enough.
  • a smaller carrier 2 results in small heat capacity on the TEC 53. Accordingly, the convergence of the current wavelength on the target wavelength may be accelerated.
  • the auxiliary area 3c for absorbing the surplus brazing material 15 is not always to be brought out from the die area 3a along a direction same with that of the mounting area 3b.
  • the auxiliary area 3c extends perpendicular to the die area 3a toward one direction and the mounting area 3b also extends perpendicular to the die area 3a but toward another direction opposite to the former one, that is, the auxiliary area 3c faces the mounting area 3b as putting the die area 3a therebetween, the capacitor 14 may be mounted further closer to the LD 12.
  • the embodiment uses the capacitor 14 having the type of, what is called, a chip capacitor with two electrodes thereof laterally disposed.
  • the laser assembly 1 may use a capacitor with the type of a die capacitor with two electrodes thereof vertically disposed.
  • the die capacitor 14 is mounted on the mounting area 3b as the bottom electrode thereof faces and comes in contact to the mounting area 3b, while, the top electrode thereof is connected to the metal pattern 4 with a bonding wire.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
PCT/JP2015/003966 2014-08-08 2015-08-06 Laser assembly and method to assemble laser assembly WO2016021203A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201580001570.5A CN105518950B (zh) 2014-08-08 2015-08-06 激光组件和组装激光组件的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014162643A JP6542514B2 (ja) 2014-08-08 2014-08-08 半導体レーザ装置
JP2014-162643 2014-08-08

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Publication Number Publication Date
WO2016021203A1 true WO2016021203A1 (en) 2016-02-11

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PCT/JP2015/003966 WO2016021203A1 (en) 2014-08-08 2015-08-06 Laser assembly and method to assemble laser assembly

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JP (1) JP6542514B2 (enrdf_load_stackoverflow)
CN (1) CN105518950B (enrdf_load_stackoverflow)
WO (1) WO2016021203A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220352690A1 (en) * 2019-10-25 2022-11-03 Mitsubishi Electric Corporation Optical semiconductor device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6794140B2 (ja) * 2016-05-23 2020-12-02 オプト エレクトロニクス ソリューションズ 光送信機及びこれを含む光モジュール
DE102017108050B4 (de) * 2017-04-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterstrahlungsquelle
JP7097169B2 (ja) * 2017-10-27 2022-07-07 古河電気工業株式会社 光素子モジュール及び光素子モジュールの評価方法
JP2019087656A (ja) * 2017-11-08 2019-06-06 三菱電機株式会社 光モジュールおよびその製造方法
US11811191B2 (en) * 2019-08-22 2023-11-07 Sumitomo Electric Device Innovations, Inc. Optical semiconductor device and carrier

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237481A (ja) * 2000-02-24 2001-08-31 Citizen Electronics Co Ltd レーザダイオード用マウント構造及びその実装方法
US20020121863A1 (en) * 2001-03-02 2002-09-05 Yukiko Morishita Semiconductor light-emitting device
JP2003197982A (ja) * 2001-12-26 2003-07-11 Komatsu Electronics Inc 金スズ接合ペルチェ素子熱電変換モジュール
US20050214957A1 (en) * 2004-02-19 2005-09-29 Toshiaki Kihara Method for manufacturing a transmitting optical sub-assembly with a thermo-electric cooler therein
JP2009087964A (ja) * 2007-09-27 2009-04-23 Kyocera Corp 電子部品
US20120138665A1 (en) * 2010-12-03 2012-06-07 Sumitomo Electric Device Innovations, Inc. Method for fabricating optical semiconductor device
US20130011104A1 (en) * 2011-07-04 2013-01-10 Sumitomo Electric Industries, Ltd. Optical module with lens assembly soldered to carrier

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005203553A (ja) * 2004-01-15 2005-07-28 Matsushita Electric Ind Co Ltd 光送受信モジュールおよび光送受信装置
JP4772560B2 (ja) * 2006-03-31 2011-09-14 住友電工デバイス・イノベーション株式会社 光半導体装置、およびその制御方法
JP2013074187A (ja) * 2011-09-28 2013-04-22 Oki Electric Ind Co Ltd モード同期半導体レーザ装置及びモード同期半導体レーザ装置の制御方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237481A (ja) * 2000-02-24 2001-08-31 Citizen Electronics Co Ltd レーザダイオード用マウント構造及びその実装方法
US20020121863A1 (en) * 2001-03-02 2002-09-05 Yukiko Morishita Semiconductor light-emitting device
JP2003197982A (ja) * 2001-12-26 2003-07-11 Komatsu Electronics Inc 金スズ接合ペルチェ素子熱電変換モジュール
US20050214957A1 (en) * 2004-02-19 2005-09-29 Toshiaki Kihara Method for manufacturing a transmitting optical sub-assembly with a thermo-electric cooler therein
JP2009087964A (ja) * 2007-09-27 2009-04-23 Kyocera Corp 電子部品
US20120138665A1 (en) * 2010-12-03 2012-06-07 Sumitomo Electric Device Innovations, Inc. Method for fabricating optical semiconductor device
US20130011104A1 (en) * 2011-07-04 2013-01-10 Sumitomo Electric Industries, Ltd. Optical module with lens assembly soldered to carrier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220352690A1 (en) * 2019-10-25 2022-11-03 Mitsubishi Electric Corporation Optical semiconductor device
US12230938B2 (en) * 2019-10-25 2025-02-18 Mitsubishi Electric Corporation Optical semiconductor device

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JP6542514B2 (ja) 2019-07-10
CN105518950B (zh) 2018-12-07
JP2016039304A (ja) 2016-03-22
CN105518950A (zh) 2016-04-20

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