CN105448697B - 高深宽比结构的刻蚀方法及mems器件的制作方法 - Google Patents
高深宽比结构的刻蚀方法及mems器件的制作方法 Download PDFInfo
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- CN105448697B CN105448697B CN201410345037.8A CN201410345037A CN105448697B CN 105448697 B CN105448697 B CN 105448697B CN 201410345037 A CN201410345037 A CN 201410345037A CN 105448697 B CN105448697 B CN 105448697B
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- 238000000034 method Methods 0.000 title claims abstract description 138
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000005530 etching Methods 0.000 claims abstract description 221
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- 230000007704 transition Effects 0.000 claims abstract description 41
- 230000008021 deposition Effects 0.000 claims description 59
- 239000007789 gas Substances 0.000 claims description 33
- 238000004062 sedimentation Methods 0.000 claims description 27
- 230000037237 body shape Effects 0.000 claims description 12
- 208000002925 dental caries Diseases 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 5
- 230000003628 erosive effect Effects 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000000708 deep reactive-ion etching Methods 0.000 description 4
- 229910008045 Si-Si Inorganic materials 0.000 description 3
- 229910006411 Si—Si Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Drying Of Semiconductors (AREA)
- Micromachines (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410345037.8A CN105448697B (zh) | 2014-07-18 | 2014-07-18 | 高深宽比结构的刻蚀方法及mems器件的制作方法 |
| TW104122756A TW201604993A (zh) | 2014-07-18 | 2015-07-14 | 高深寬比結構的蝕刻方法及mems裝置的製作方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410345037.8A CN105448697B (zh) | 2014-07-18 | 2014-07-18 | 高深宽比结构的刻蚀方法及mems器件的制作方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105448697A CN105448697A (zh) | 2016-03-30 |
| CN105448697B true CN105448697B (zh) | 2018-05-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410345037.8A Active CN105448697B (zh) | 2014-07-18 | 2014-07-18 | 高深宽比结构的刻蚀方法及mems器件的制作方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105448697B (enExample) |
| TW (1) | TW201604993A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110890277B (zh) * | 2018-09-07 | 2022-05-10 | 无锡华润上华科技有限公司 | 沟槽式金属氧化物半导体肖特基势垒晶体管制备方法 |
| CN111252730A (zh) * | 2020-01-22 | 2020-06-09 | 成都工业学院 | 一种非对称半导体结构的制备方法 |
| CN113745101A (zh) * | 2020-05-29 | 2021-12-03 | 江苏鲁汶仪器有限公司 | 一种用于高深宽比器件刻蚀的方法及机台 |
| CN113200511B (zh) * | 2021-04-06 | 2024-08-16 | 杭州士兰集昕微电子有限公司 | 一种微机电传感器的背腔的制造方法 |
| CN114300413B (zh) * | 2021-12-02 | 2025-05-23 | 北京北方华创微电子装备有限公司 | 半导体封装结构的加工方法和半导体封装结构 |
| CN120767256B (zh) * | 2025-09-09 | 2025-11-07 | 上海邦芯半导体科技有限公司 | 一种改善高深宽比刻蚀结构填充性能的方法及半导体结构 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6127278A (en) * | 1997-06-02 | 2000-10-03 | Applied Materials, Inc. | Etch process for forming high aspect ratio trenched in silicon |
| US6071822A (en) * | 1998-06-08 | 2000-06-06 | Plasma-Therm, Inc. | Etching process for producing substantially undercut free silicon on insulator structures |
| TW531833B (en) * | 2002-02-22 | 2003-05-11 | Nanya Technology Corp | Manufacturing method for shallow trench isolation with high aspect ratio |
| TWI313040B (en) * | 2003-02-20 | 2009-08-01 | Taiwan Semiconductor Mfg | Etching method for forming deep trench. |
| TWI255502B (en) * | 2005-01-19 | 2006-05-21 | Promos Technologies Inc | Method for preparing structure with high aspect ratio |
| EP2136391A4 (en) * | 2007-04-11 | 2012-12-19 | Ulvac Inc | dry |
| EP2399863A1 (en) * | 2010-06-22 | 2011-12-28 | Valtion Teknillinen Tutkimuskeskus | Multi-layer substrate structure and manufacturing method for the same |
| CN103594361A (zh) * | 2012-08-13 | 2014-02-19 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
| CN103811408B (zh) * | 2012-11-08 | 2016-08-17 | 中微半导体设备(上海)有限公司 | 一种深硅通孔刻蚀方法 |
| CN103456620B (zh) * | 2013-09-11 | 2016-03-02 | 中微半导体设备(上海)有限公司 | 半导体结构的形成方法 |
-
2014
- 2014-07-18 CN CN201410345037.8A patent/CN105448697B/zh active Active
-
2015
- 2015-07-14 TW TW104122756A patent/TW201604993A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN105448697A (zh) | 2016-03-30 |
| TWI560807B (enExample) | 2016-12-01 |
| TW201604993A (zh) | 2016-02-01 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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