CN1054469C - 形成半导体器件的方法 - Google Patents

形成半导体器件的方法 Download PDF

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Publication number
CN1054469C
CN1054469C CN93105438A CN93105438A CN1054469C CN 1054469 C CN1054469 C CN 1054469C CN 93105438 A CN93105438 A CN 93105438A CN 93105438 A CN93105438 A CN 93105438A CN 1054469 C CN1054469 C CN 1054469C
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CN
China
Prior art keywords
gate electrode
insulating film
film
semiconductor
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN93105438A
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English (en)
Chinese (zh)
Other versions
CN1078068A (zh
Inventor
山崎舜平
张宏勇
鱼地秀贵
安达广树
竹村保彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4115503A external-priority patent/JP3071940B2/ja
Priority claimed from JP5089117A external-priority patent/JPH06275646A/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN1078068A publication Critical patent/CN1078068A/zh
Application granted granted Critical
Publication of CN1054469C publication Critical patent/CN1054469C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers

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  • Thin Film Transistor (AREA)
CN93105438A 1992-04-07 1993-04-07 形成半导体器件的方法 Expired - Fee Related CN1054469C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP115503/92 1992-04-07
JP4115503A JP3071940B2 (ja) 1992-04-07 1992-04-07 絶縁ゲイト型半導体装置の作製方法
JP115503/1992 1992-04-07
JP5089117A JPH06275646A (ja) 1993-03-24 1993-03-24 薄膜トランジスタの作製方法
JP089117/1992 1993-03-24
JP089117/92 1993-03-24

Publications (2)

Publication Number Publication Date
CN1078068A CN1078068A (zh) 1993-11-03
CN1054469C true CN1054469C (zh) 2000-07-12

Family

ID=26430549

Family Applications (1)

Application Number Title Priority Date Filing Date
CN93105438A Expired - Fee Related CN1054469C (zh) 1992-04-07 1993-04-07 形成半导体器件的方法

Country Status (3)

Country Link
KR (1) KR970003917B1 (cg-RX-API-DMAC10.html)
CN (1) CN1054469C (cg-RX-API-DMAC10.html)
TW (1) TW223703B (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105637646A (zh) * 2013-10-28 2016-06-01 富士电机株式会社 碳化硅半导体装置及其制造方法
CN107799605A (zh) * 2017-10-27 2018-03-13 合肥鑫晟光电科技有限公司 一种薄膜晶体管及其制备方法、阵列基板、显示装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3469337B2 (ja) * 1994-12-16 2003-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN102569053B (zh) * 2012-01-18 2014-12-24 上海华力微电子有限公司 一种形成高介电常数金属栅的方法
CN105977306A (zh) * 2016-06-21 2016-09-28 北京大学深圳研究生院 一种自对准薄膜晶体管及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0451968A1 (en) * 1990-04-11 1991-10-16 THE GENERAL ELECTRIC COMPANY, p.l.c. Process for manufacturing thin film transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0451968A1 (en) * 1990-04-11 1991-10-16 THE GENERAL ELECTRIC COMPANY, p.l.c. Process for manufacturing thin film transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105637646A (zh) * 2013-10-28 2016-06-01 富士电机株式会社 碳化硅半导体装置及其制造方法
CN107799605A (zh) * 2017-10-27 2018-03-13 合肥鑫晟光电科技有限公司 一种薄膜晶体管及其制备方法、阵列基板、显示装置
US10615051B2 (en) 2017-10-27 2020-04-07 Boe Technology Group Co., Ltd. Thin-film transistor and method of manufacturing the same, array substrate, and display apparatus
CN107799605B (zh) * 2017-10-27 2020-07-31 合肥鑫晟光电科技有限公司 一种薄膜晶体管及其制备方法、阵列基板、显示装置

Also Published As

Publication number Publication date
CN1078068A (zh) 1993-11-03
KR930022600A (ko) 1993-11-24
KR970003917B1 (en) 1997-03-22
TW223703B (cg-RX-API-DMAC10.html) 1994-05-11

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Granted publication date: 20000712

Termination date: 20100407