KR970003917B1 - Method of making insulating gate semiconductor device - Google Patents

Method of making insulating gate semiconductor device Download PDF

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Publication number
KR970003917B1
KR970003917B1 KR93005710A KR930005710A KR970003917B1 KR 970003917 B1 KR970003917 B1 KR 970003917B1 KR 93005710 A KR93005710 A KR 93005710A KR 930005710 A KR930005710 A KR 930005710A KR 970003917 B1 KR970003917 B1 KR 970003917B1
Authority
KR
South Korea
Prior art keywords
semiconductor device
gate semiconductor
insulating gate
making insulating
making
Prior art date
Application number
KR93005710A
Other languages
English (en)
Other versions
KR930022600A (ko
Inventor
Shunpei Yamazaki
Hongyong Zhang
Hideki Uochi
Hiroki Adachi
Tasuhiko Takemura
Original Assignee
Semiconductor Energy Lab Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4115503A external-priority patent/JP3071940B2/ja
Priority claimed from JP5089117A external-priority patent/JPH06275646A/ja
Application filed by Semiconductor Energy Lab Kk filed Critical Semiconductor Energy Lab Kk
Publication of KR930022600A publication Critical patent/KR930022600A/ko
Application granted granted Critical
Publication of KR970003917B1 publication Critical patent/KR970003917B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
KR93005710A 1992-04-07 1993-04-06 Method of making insulating gate semiconductor device KR970003917B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP4115503A JP3071940B2 (ja) 1992-04-07 1992-04-07 絶縁ゲイト型半導体装置の作製方法
JP92-115503 1992-04-07
JP92-107642 1992-04-27
JP5089117A JPH06275646A (ja) 1993-03-24 1993-03-24 薄膜トランジスタの作製方法

Publications (2)

Publication Number Publication Date
KR930022600A KR930022600A (ko) 1993-11-24
KR970003917B1 true KR970003917B1 (en) 1997-03-22

Family

ID=26430549

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93005710A KR970003917B1 (en) 1992-04-07 1993-04-06 Method of making insulating gate semiconductor device

Country Status (3)

Country Link
KR (1) KR970003917B1 (ko)
CN (1) CN1054469C (ko)
TW (1) TW223703B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3469337B2 (ja) * 1994-12-16 2003-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN102569053B (zh) * 2012-01-18 2014-12-24 上海华力微电子有限公司 一种形成高介电常数金属栅的方法
JPWO2015064256A1 (ja) * 2013-10-28 2017-03-09 富士電機株式会社 炭化シリコン半導体装置及びその製造方法
CN105977306A (zh) * 2016-06-21 2016-09-28 北京大学深圳研究生院 一种自对准薄膜晶体管及其制备方法
CN107799605B (zh) * 2017-10-27 2020-07-31 合肥鑫晟光电科技有限公司 一种薄膜晶体管及其制备方法、阵列基板、显示装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9008214D0 (en) * 1990-04-11 1990-06-13 Gen Electric Co Plc Semiconductor devices

Also Published As

Publication number Publication date
CN1054469C (zh) 2000-07-12
CN1078068A (zh) 1993-11-03
TW223703B (ko) 1994-05-11
KR930022600A (ko) 1993-11-24

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