CN1054457C - 半导体存储装置及其制造方法 - Google Patents

半导体存储装置及其制造方法 Download PDF

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Publication number
CN1054457C
CN1054457C CN95118497A CN95118497A CN1054457C CN 1054457 C CN1054457 C CN 1054457C CN 95118497 A CN95118497 A CN 95118497A CN 95118497 A CN95118497 A CN 95118497A CN 1054457 C CN1054457 C CN 1054457C
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CN
China
Prior art keywords
data
output
circuit
address
dummy data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN95118497A
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English (en)
Chinese (zh)
Other versions
CN1131324A (zh
Inventor
望月义夫
加藤秀夫
杉浦伸竹
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Toshiba Corp
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Toshiba Corp
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Publication date
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Publication of CN1131324A publication Critical patent/CN1131324A/zh
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Publication of CN1054457C publication Critical patent/CN1054457C/zh
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/14—Protection against unauthorised use of memory or access to memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/14—Protection against unauthorised use of memory or access to memory
    • G06F12/1408—Protection against unauthorised use of memory or access to memory by using cryptography
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/20—Address safety or protection circuits, i.e. arrangements for preventing unauthorized or accidental access

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  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Storage Device Security (AREA)
CN95118497A 1994-10-15 1995-10-13 半导体存储装置及其制造方法 Expired - Fee Related CN1054457C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP275971/1994 1994-10-15
JP275971/94 1994-10-15
JP27597194A JPH08115265A (ja) 1994-10-15 1994-10-15 半導体記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
CN1131324A CN1131324A (zh) 1996-09-18
CN1054457C true CN1054457C (zh) 2000-07-12

Family

ID=17562975

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95118497A Expired - Fee Related CN1054457C (zh) 1994-10-15 1995-10-13 半导体存储装置及其制造方法

Country Status (7)

Country Link
US (1) US5579279A (enExample)
EP (1) EP0707317B1 (enExample)
JP (1) JPH08115265A (enExample)
KR (1) KR100192632B1 (enExample)
CN (1) CN1054457C (enExample)
DE (1) DE69524529T2 (enExample)
TW (1) TW288118B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100611955B1 (ko) * 1999-07-20 2006-08-11 삼성전자주식회사 스크램블러
JP3872626B2 (ja) 2000-02-14 2007-01-24 シャープ株式会社 メモリ装置
JP4052895B2 (ja) * 2002-08-07 2008-02-27 シャープ株式会社 メモリセル情報の読み出し回路および半導体記憶装置
JP2004220721A (ja) * 2003-01-16 2004-08-05 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2007272943A (ja) * 2006-03-30 2007-10-18 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1091544A (zh) * 1992-12-02 1994-08-31 松下电器产业株式会社 半导体存储装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346459A (en) * 1980-06-30 1982-08-24 Inmos Corporation Redundancy scheme for an MOS memory
GB2129586B (en) * 1982-11-01 1986-04-30 Robert Andrew Mclaren Improvements in or relating to memory systems
US4583196A (en) * 1983-10-28 1986-04-15 Honeywell Inc. Secure read only memory
US4843026A (en) * 1987-09-24 1989-06-27 Intel Corporation Architecture modification for improved ROM security
US5287321A (en) * 1992-01-24 1994-02-15 Vlsi Technology, Inc. Illegal address detector for semiconductor memories
JP3310011B2 (ja) * 1992-03-30 2002-07-29 株式会社東芝 半導体メモリおよびこれを使用した半導体メモリボード
JPH0765139A (ja) * 1993-08-23 1995-03-10 Mitsubishi Electric Corp Ｉｃメモリカード

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1091544A (zh) * 1992-12-02 1994-08-31 松下电器产业株式会社 半导体存储装置

Also Published As

Publication number Publication date
KR960015910A (ko) 1996-05-22
JPH08115265A (ja) 1996-05-07
US5579279A (en) 1996-11-26
EP0707317B1 (en) 2001-12-12
EP0707317A2 (en) 1996-04-17
TW288118B (enExample) 1996-10-11
DE69524529D1 (de) 2002-01-24
CN1131324A (zh) 1996-09-18
DE69524529T2 (de) 2002-07-11
EP0707317A3 (en) 1997-08-06
KR100192632B1 (ko) 1999-06-15

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SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20000712

Termination date: 20091113