CN105428426A - 一种二级管用外延片及其制备方法 - Google Patents
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Abstract
<b>本发明提供一种二级管用外延片及其制备方法,由其制成的二极管电子器件漏电较低、击穿电压较高、寿命较长。一种二级管用外延片,包括:图形化蓝宝石衬底;</b><b>AlN</b><b>成核层,通过磁控溅射技术沉积于所述图形化蓝宝石衬底的上表面;</b><b>GaN</b><b>缓冲层,其沉积于所述</b><b>AlN</b><b>成核层的上表面,所述</b><b>GaN</b><b>缓冲层为</b><b>C</b><b>掺杂的</b><b>GaN</b><b>缓冲层;外延结构层,其沉积于所述</b><b>GaN</b><b>缓冲层的上表面。</b>
Description
技术领域
本发明涉及一种二极管用外延片及其制备方法。
背景技术
目前用于二极管的外延片的衬底主要有两种,即蓝宝石衬底和碳化硅衬底。但由于碳化硅的价格昂贵,故蓝宝石衬底的使用更为广泛。现有技术中普遍使用的平片状蓝宝石衬底由于其位错密度较高,制成的二极管电子器件漏电流较高、易击穿。
发明内容
针对上述问题,本发明的目的是提供一种二级管用外延片及其制备方法,由其制成的二极管电子器件漏电较低、击穿电压较高、寿命较长。
为解决上述技术问题,本发明采用的技术方案为:
一种二级管用外延片,包括:
图形化蓝宝石衬底;
AlN成核层,通过磁控溅射技术沉积于所述图形化蓝宝石衬底的上表面;
GaN缓冲层,其沉积于所述AlN成核层的上表面,所述GaN缓冲层为C掺杂的GaN缓冲层;
外延结构层,其沉积于所述GaN缓冲层的上表面。
优选地,所述图形化蓝宝石衬底的图形高度为1~2μm,图形宽度为1.5~6μm,图形间隙为0.1~2μm。
优选地,所述AlN成核层是厚度为5~25nm的多晶AlN层。
优选地,所述GaN缓冲层中C的掺杂源为TMGa、CCl
4
或C
2
H
2
。
优选地,所述GaN缓冲层中C的掺杂浓度为5E15~1E19cm
-3
,且所述GaN缓冲层的厚度为2~3μm。
优选地,所述外延结构层包括:
AlGaN层,其沉积于所述GaN缓冲层的上表面且厚度为30~300nm;
重掺杂nGaN层,其沉积于所述AlGaN层的上表面且掺杂浓度为5E18~2E19cm
-3
,所述重掺杂nGaN层的厚度为2.5~3μm;
轻掺杂nGaN层,其沉积于所述重掺杂nGaN层的上表面且掺杂浓度为4E15~2E16cm
-3
,所述轻掺杂nGaN层的厚度为5~15μm。
更优选地,所述AlGaN层中Al的摩尔百分含量为5~20%。
本发明采用的又一技术方案是:
一种所述的二级管用外延片的制备方法,包括如下步骤:
A、在图形化蓝宝石衬底的上表面磁控溅射形成一层多晶AlN成核层;
B、加热升温至1040~1080℃,保持压力为30~400mbar,通过MOCVD技术在AlN成核层的上表面生长C掺杂的GaN缓冲层。
优选地,还包括如下步骤:
C、在950~1050℃下,在GaN缓冲层的上表面生长AlGaN层;
D、在1000~1080℃下,在AlGaN层的上表面生长重掺杂nGaN层;
E、保持温度不变,在重掺杂nGaN层的上表面生长轻掺杂nGaN层;
上述各步骤的顺序为依次进行。
更优选地,所述重掺杂nGaN层、轻掺杂nGaN层的生长压力均为100~700mbar,生长温度均为1000~1080℃。
本发明采用以上技术方案,相比现有技术具有如下优点:使用磁控溅射技术在图形化蓝宝石衬底沉积AlN成核层,并在AlN上生长外延结构层的掺C的GaN缓冲层,相比使用其它类型的蓝宝石衬底(如蓝宝石平片)制作的肖特基二极管,晶体质量较好,位错密度由现有技术中的1E9cm
-3
降低至6E7cm
-3
。本发明的二极管外延片制作的肖特基二极管器件漏电较低,散热较好,击穿电压较高,寿命较长。
具体实施方式
下面对本发明的较佳实施例进行详细阐述,以使本发明的优点和特征能更易于被本领域的技术人员理解。
本发明的一种二级管用外延片,该二级管用外延片包括自下至上依次层叠的衬底、AlN成核层、GaN缓冲层、AlGaN层、重掺杂nGaN层、轻掺杂nGaN层。其中,AlGaN层、重掺杂nGaN层、轻掺杂nGaN层构成外延片的外延结构层。
衬底为图形化蓝宝石衬底(PSS)。图形化蓝宝石衬底的图形高度为1~2μm,图形宽度为1.5~6μm,图形间隙为0.1~2μm。图形化蓝宝石衬底通过纳米压印光刻技术、stepper光刻技术、干法刻蚀技术或湿法刻蚀技术制备而成。图像化蓝宝石衬底的图像为正圆锥形,或者为类圆锥形,类圆锥形是指其侧壁为向外突的弧形。
成核层通过磁控溅射技术沉积于图形化蓝宝石衬底的上表面。AlN成核层是厚度为5~25nm的多晶AlN层。
缓冲层为C掺杂的GaN缓冲层,C的掺杂源为TMGa、CCl
4
或C
2
H
2
。GaN缓冲层中C的掺杂浓度为5E15~1E19cm
-3
,GaN缓冲层的厚度为2~3μm。
层、重掺杂nGaN层、轻掺杂nGaN层构成三级管用外延片的外延结构层。其中,AlGaN层沉积于GaN缓冲层的上表面且厚度为30~300nm,AlGaN层中Al的摩尔百分含量为5~20%;重掺杂nGaN层沉积于AlGaN层的上表面且掺杂浓度为5E18~2E19cm
-3
,重掺杂nGaN层的厚度为2.5~3μm;轻掺杂nGaN层沉积于重掺杂nGaN层的上表面且掺杂浓度为4E15~2E16cm
-3
,轻掺杂nGaN层的厚度为5~15μm。
一种上述二级管用外延片的制备方法,依次包括如下步骤:
A、通过磁控溅射设备在图形化蓝宝石衬底的上表面磁控溅射形成一层多晶AlN成核层;
B、加热升温至1040~1080℃,保持压力为30~400mbar,将带有AlN成核层的图像化蓝宝石衬底放入MOCVD中,通过MOCVD技术在AlN成核层的上表面生长C掺杂的GaN缓冲层;
C、在950~1050℃下,在GaN缓冲层的上表面生长AlGaN层;
D、在1000~1080℃下,在AlGaN层的上表面生长重掺杂nGaN层;
E、保持温度不变,在重掺杂nGaN层的上表面生长轻掺杂nGaN层。
其中,重掺杂nGaN层、轻掺杂nGaN层的生长压力均为100~700mbar,生长温度均为1000~1080℃。
相比平片蓝宝石衬底制成的三极管外延片,本发明在图像化蓝宝石衬底上通过磁控溅射生长一层多晶AlN成核层,在通过MOCVD技术生长一层掺C的GaN缓冲层,在此基础上制成的二极管外延片的位错密度由现有技术中的1E9cm
-3
降低至6E7cm
-3
。
上述实施例只为说明本发明的技术构思及特点,是一种优选的实施例,其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施,并不能以此限制本发明的保护范围。凡根据本发明的精神实质所作的等效变化或修饰,都应涵盖在本发明的保护范围之内。
Claims (10)
1.一种二级管用外延片,其特征在于,包括:
图形化蓝宝石衬底;
AlN成核层,通过磁控溅射技术沉积于所述图形化蓝宝石衬底的上表面;
GaN缓冲层,其沉积于所述AlN成核层的上表面,所述GaN缓冲层为C掺杂的GaN缓冲层;
外延结构层,其沉积于所述GaN缓冲层的上表面。
2.根据权利要求1所述的二极管用外延片,其特征在于:所述图形化蓝宝石衬底的图形高度为1~2μm,图形宽度为1.5~6μm,图形间隙为0.1~2μm。
3.根据权利要求1所述的二极管用外延片,其特征在于:所述AlN成核层是厚度为5~25nm的多晶AlN层。
4.根据权利要求1所述的二极管用外延片,其特征在于:所述GaN缓冲层中C的掺杂源为TMGa、CCl4或C2H2。
5.根据权利要求1所述的二极管用外延片,其特征在于:所述GaN缓冲层中C的掺杂浓度为5E15~1E19cm-3,且所述GaN缓冲层的厚度为2~3μm。
6.根据权利要求1所述的二极管用外延片,其特征在于,所述外延结构层包括:
AlGaN层,其沉积于所述GaN缓冲层的上表面且厚度为30~300nm;
重掺杂nGaN层,其沉积于所述AlGaN层的上表面且掺杂浓度为5E18~2E19cm-3,所述重掺杂nGaN层的厚度为2.5~3μm;
轻掺杂nGaN层,其沉积于所述重掺杂nGaN层的上表面且掺杂浓度为4E15~2E16cm-3,所述轻掺杂nGaN层的厚度为5~15μm。
7.根据权利要求6所述的二极管用外延片,其特征在于:所述AlGaN层中Al的摩尔百分含量为5~20%。
8.一种如权利要求1-7任一项所述的二级管用外延片的制备方法,其特征在于,包括如下步骤:
A、在图形化蓝宝石衬底的上表面磁控溅射形成一层多晶AlN成核层;
B、加热升温至1040~1080℃,保持压力为30~400mbar,通过MOCVD技术在AlN成核层的上表面生长C掺杂的GaN缓冲层。
9.根据权利要求8所述的制备方法,其特征在于,还包括如下步骤:
C、在950~1050℃下,在GaN缓冲层的上表面生长AlGaN层;
D、在1000~1080℃下,在AlGaN层的上表面生长重掺杂nGaN层;
E、保持温度不变,在重掺杂nGaN层的上表面生长轻掺杂nGaN层;
上述各步骤的顺序为依次进行。
10.根据权利要求9所述的制备方法,其特征在于:所述重掺杂nGaN层、轻掺杂nGaN层的生长压力均为100~700mbar,生长温度均为1000~1080℃。
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106098747A (zh) * | 2016-06-30 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | 一种肖特基二极管用外延片及其制备方法 |
CN106098798A (zh) * | 2016-06-30 | 2016-11-09 | 江苏能华微电子科技发展有限公司 | 肖特基二极管用外延片及其制备方法 |
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