CN105308858A - 一种功率放大电路及发射机 - Google Patents
一种功率放大电路及发射机 Download PDFInfo
- Publication number
- CN105308858A CN105308858A CN201480000696.6A CN201480000696A CN105308858A CN 105308858 A CN105308858 A CN 105308858A CN 201480000696 A CN201480000696 A CN 201480000696A CN 105308858 A CN105308858 A CN 105308858A
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- power amplification
- amplification circuit
- mos capacitor
- matching network
- capacitor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6611—Wire connections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/48195—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being a discrete passive component
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/494—Connecting portions
- H01L2224/4943—Connecting portions the connecting portions being staggered
- H01L2224/49433—Connecting portions the connecting portions being staggered outside the semiconductor or solid-state body
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
一种能够提高低频谐振频率、设计更加灵活的功率放大电路,该功率放大电路包括功放管芯(die)、第一金属氧化物半导体电容(Moscap1)、直流去耦电容(CLF)和输出匹配网络,其中:该功放管芯(die)的漏极通过邦定线(LB1)连接该第一金属氧化物半导体电容(Moscap1)的第一端,该第一金属氧化物半导体电容(Moscap1)的第二端接地;该功放管芯(die)的漏极通过邦定线(LB2)直接连接该输出匹配网络;该功放管芯(die)的源极接地;该第一金属氧化物半导体电容(Moscap1)的第一端通过邦定线(LB3)连接该直流去耦电容(CLF)的一端;该直流去耦电容(CLF)的另一端接地。
Description
PCT国内申请,说明书已公开。
Claims (1)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2014/073883 WO2015139311A1 (zh) | 2014-03-21 | 2014-03-21 | 一种功率放大电路及发射机 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105308858A true CN105308858A (zh) | 2016-02-03 |
CN105308858B CN105308858B (zh) | 2019-04-05 |
Family
ID=54143723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480000696.6A Active CN105308858B (zh) | 2014-03-21 | 2014-03-21 | 一种功率放大电路及发射机 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9866181B2 (zh) |
EP (1) | EP3113360A4 (zh) |
JP (1) | JP6478253B2 (zh) |
CN (1) | CN105308858B (zh) |
WO (1) | WO2015139311A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108090267A (zh) * | 2017-12-11 | 2018-05-29 | 广州全界通讯科技有限公司 | 一种pcb版图结构 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10292278B2 (en) * | 2017-08-21 | 2019-05-14 | Seagate Technology Llc | Compact printed circuit board assembly with insulating endcap via |
CN107547054B (zh) * | 2017-09-07 | 2020-03-27 | 苏州远创达科技有限公司 | 分离式补偿电感内匹配功率放大器 |
CN109257021A (zh) * | 2018-10-30 | 2019-01-22 | 天津津航计算技术研究所 | 一种改善数据链通信qpsk调制下射频前端记忆效应的电路及方法 |
US11601152B1 (en) | 2021-09-13 | 2023-03-07 | Apple Inc. | Radio-frequency power amplifier with amplitude modulation to phase modulation (AMPM) compensation |
Citations (4)
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CN1701613A (zh) * | 2002-09-30 | 2005-11-23 | 克里微波公司 | 具有rf旁路/输出匹配网络的封装rf功率晶体管 |
CN1976023A (zh) * | 2005-07-26 | 2007-06-06 | 英飞凌科技股份公司 | 输出匹配晶体管 |
US20110309872A1 (en) * | 2010-06-17 | 2011-12-22 | Cynthia Blair | Voltage Spike Protection for Power DMOS Devices |
US20130033325A1 (en) * | 2010-04-22 | 2013-02-07 | Freescale Semiconductor, Inc. | Rf power transistor circuit |
Family Cites Families (28)
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JPH06164266A (ja) * | 1992-11-27 | 1994-06-10 | Toshiba Corp | マイクロ波増幅器 |
JP3060981B2 (ja) * | 1997-02-21 | 2000-07-10 | 日本電気株式会社 | マイクロ波増幅器 |
JP3123484B2 (ja) * | 1997-10-29 | 2001-01-09 | 日本電気株式会社 | マイクロ波増幅器 |
JP2001332935A (ja) * | 2000-05-19 | 2001-11-30 | Fujitsu Ltd | マイクロ波増幅器 |
JP2002171138A (ja) * | 2000-12-01 | 2002-06-14 | Nec Corp | マイクロ波電力増幅器 |
US6614308B2 (en) * | 2001-10-22 | 2003-09-02 | Infineon Technologies Ag | Multi-stage, high frequency, high power signal amplifier |
AU2003201121A1 (en) * | 2002-01-24 | 2003-09-02 | Koninklijke Philips Electronics N.V. | Rf amplifier |
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GB0220800D0 (en) * | 2002-09-06 | 2002-10-16 | Nokia Corp | Power amplifier system |
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WO2006016299A1 (en) * | 2004-08-09 | 2006-02-16 | Koninklijke Philips Electronics N.V. | Integrated f-class amplifier with output parasitic capacitance compensation |
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JP4485487B2 (ja) * | 2006-05-11 | 2010-06-23 | シャープ株式会社 | 電力増幅器 |
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US20080231373A1 (en) * | 2007-03-20 | 2008-09-25 | Hafizur Rahman | Output Circuit |
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CN103326678A (zh) * | 2010-09-14 | 2013-09-25 | 华为技术有限公司 | 一种功率放大器、不对称达赫笛功率放大设备和基站 |
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-
2014
- 2014-03-21 CN CN201480000696.6A patent/CN105308858B/zh active Active
- 2014-03-21 EP EP14886265.9A patent/EP3113360A4/en not_active Ceased
- 2014-03-21 WO PCT/CN2014/073883 patent/WO2015139311A1/zh active Application Filing
- 2014-03-21 JP JP2017500109A patent/JP6478253B2/ja active Active
-
2016
- 2016-09-20 US US15/270,954 patent/US9866181B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1701613A (zh) * | 2002-09-30 | 2005-11-23 | 克里微波公司 | 具有rf旁路/输出匹配网络的封装rf功率晶体管 |
CN1976023A (zh) * | 2005-07-26 | 2007-06-06 | 英飞凌科技股份公司 | 输出匹配晶体管 |
US20130033325A1 (en) * | 2010-04-22 | 2013-02-07 | Freescale Semiconductor, Inc. | Rf power transistor circuit |
US20110309872A1 (en) * | 2010-06-17 | 2011-12-22 | Cynthia Blair | Voltage Spike Protection for Power DMOS Devices |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108090267A (zh) * | 2017-12-11 | 2018-05-29 | 广州全界通讯科技有限公司 | 一种pcb版图结构 |
Also Published As
Publication number | Publication date |
---|---|
US9866181B2 (en) | 2018-01-09 |
JP2017513428A (ja) | 2017-05-25 |
EP3113360A4 (en) | 2017-03-08 |
US20170012587A1 (en) | 2017-01-12 |
CN105308858B (zh) | 2019-04-05 |
JP6478253B2 (ja) | 2019-03-06 |
WO2015139311A1 (zh) | 2015-09-24 |
EP3113360A1 (en) | 2017-01-04 |
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