CN1052965A - 半导体存储器阵列 - Google Patents
半导体存储器阵列 Download PDFInfo
- Publication number
- CN1052965A CN1052965A CN90106620A CN90106620A CN1052965A CN 1052965 A CN1052965 A CN 1052965A CN 90106620 A CN90106620 A CN 90106620A CN 90106620 A CN90106620 A CN 90106620A CN 1052965 A CN1052965 A CN 1052965A
- Authority
- CN
- China
- Prior art keywords
- word line
- line driver
- storage array
- array
- semicondctor storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000005457 optimization Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019890020104A KR930001738B1 (ko) | 1989-12-29 | 1989-12-29 | 반도체 메모리장치의 워드라인 드라이버 배치방법 |
KR20104/89 | 1989-12-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1052965A true CN1052965A (zh) | 1991-07-10 |
Family
ID=19294145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN90106620A Pending CN1052965A (zh) | 1989-12-29 | 1990-07-31 | 半导体存储器阵列 |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPH03203892A (ko) |
KR (1) | KR930001738B1 (ko) |
CN (1) | CN1052965A (ko) |
DE (1) | DE4005990A1 (ko) |
FR (1) | FR2656727A1 (ko) |
GB (1) | GB2239540A (ko) |
IT (1) | IT1241519B (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102270490A (zh) * | 2011-03-29 | 2011-12-07 | 西安华芯半导体有限公司 | 一种大容量dram芯片存储阵列结构 |
CN112464502A (zh) * | 2020-12-28 | 2021-03-09 | 深圳市芯天下技术有限公司 | 优化加快存储器仿真验证方法、装置、存储介质和终端 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016018328A1 (en) | 2014-07-31 | 2016-02-04 | Hewlett-Packard Development Company, L.P. | Crossbar arrays with shared drivers |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6059677B2 (ja) * | 1981-08-19 | 1985-12-26 | 富士通株式会社 | 半導体記憶装置 |
JPS59124092A (ja) * | 1982-12-29 | 1984-07-18 | Fujitsu Ltd | メモリ装置 |
JPS60167193A (ja) * | 1984-02-09 | 1985-08-30 | Fujitsu Ltd | 半導体記憶装置 |
US4700328A (en) * | 1985-07-11 | 1987-10-13 | Intel Corporation | High speed and high efficiency layout for dram circuits |
JPH01119987A (ja) * | 1987-11-04 | 1989-05-12 | Hitachi Ltd | 半導体記憶装置 |
JP2547615B2 (ja) * | 1988-06-16 | 1996-10-23 | 三菱電機株式会社 | 読出専用半導体記憶装置および半導体記憶装置 |
-
1989
- 1989-12-29 KR KR1019890020104A patent/KR930001738B1/ko not_active IP Right Cessation
-
1990
- 1990-02-22 GB GB9004056A patent/GB2239540A/en not_active Withdrawn
- 1990-02-26 DE DE4005990A patent/DE4005990A1/de not_active Withdrawn
- 1990-02-28 FR FR9002487A patent/FR2656727A1/fr active Pending
- 1990-04-13 JP JP2096598A patent/JPH03203892A/ja active Pending
- 1990-07-31 CN CN90106620A patent/CN1052965A/zh active Pending
- 1990-07-31 IT IT48184A patent/IT1241519B/it active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102270490A (zh) * | 2011-03-29 | 2011-12-07 | 西安华芯半导体有限公司 | 一种大容量dram芯片存储阵列结构 |
CN112464502A (zh) * | 2020-12-28 | 2021-03-09 | 深圳市芯天下技术有限公司 | 优化加快存储器仿真验证方法、装置、存储介质和终端 |
Also Published As
Publication number | Publication date |
---|---|
GB2239540A (en) | 1991-07-03 |
DE4005990A1 (de) | 1991-07-11 |
KR910013263A (ko) | 1991-08-08 |
GB9004056D0 (en) | 1990-04-18 |
IT1241519B (it) | 1994-01-17 |
KR930001738B1 (ko) | 1993-03-12 |
IT9048184A0 (it) | 1990-07-31 |
FR2656727A1 (fr) | 1991-07-05 |
IT9048184A1 (it) | 1992-01-31 |
JPH03203892A (ja) | 1991-09-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6297857B1 (en) | Method for accessing banks of DRAM | |
CN100339909C (zh) | 集成电路存储设备 | |
CN1628293A (zh) | 地址空间、总线系统、存储器控制器以及设备系统 | |
EP0359203A3 (en) | Semiconductor memory device | |
DE69028809T2 (de) | Fehlertoleranter Speicher | |
CN1060731A (zh) | 直接或交叉存储器存取用的存储器控制器 | |
CN1104727C (zh) | 一种具有分层位线的存储装置 | |
EP0101884A3 (en) | Monolithic semiconductor memory | |
US5841687A (en) | Interdigitated memory array | |
CN210837190U (zh) | Dram存储器 | |
CN1052965A (zh) | 半导体存储器阵列 | |
EP1116236A1 (en) | Method of making flexibly partitioned metal line segments for a simultaneous operation flash memory device with a flexible bank partition architecture | |
DE102007036273A1 (de) | Integrierte Speichervorrichtung und Verfahren zum Betreiben einer Speichervorrichtung | |
JPH0775118B2 (ja) | 半導体記憶装置 | |
CN1022146C (zh) | 具有交指型位线结构的半导体存储器阵列 | |
JPS61227289A (ja) | 半導体記憶装置 | |
CN1551221A (zh) | 具有交织电路芯片群组的电路模块 | |
JP3060458B2 (ja) | 半導体記憶装置 | |
JPS6386186A (ja) | 半導体記憶装置 | |
KR960025798A (ko) | 반도체메모리소자의 메모리셀어레이의 배열방법 | |
US6236615B1 (en) | Semiconductor memory device having memory cell blocks different in data storage capacity without influence on peripheral circuits | |
CN1117377C (zh) | 共享自举电路 | |
JPH0581940B2 (ko) | ||
JPH01109447A (ja) | メモリシステム | |
CN2429856Y (zh) | 磁碟重复阵列控制器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C01 | Deemed withdrawal of patent application (patent law 1993) | ||
WD01 | Invention patent application deemed withdrawn after publication |