CN105283959A - 晶体管和用于制造晶体管的方法 - Google Patents
晶体管和用于制造晶体管的方法 Download PDFInfo
- Publication number
- CN105283959A CN105283959A CN201480034526.XA CN201480034526A CN105283959A CN 105283959 A CN105283959 A CN 105283959A CN 201480034526 A CN201480034526 A CN 201480034526A CN 105283959 A CN105283959 A CN 105283959A
- Authority
- CN
- China
- Prior art keywords
- transistor
- groove
- carrier substrates
- terminal
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 239000000463 material Substances 0.000 claims abstract description 41
- 230000004888 barrier function Effects 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 96
- 229910002601 GaN Inorganic materials 0.000 description 25
- 229910002704 AlGaN Inorganic materials 0.000 description 15
- 230000008901 benefit Effects 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 239000002800 charge carrier Substances 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 230000005669 field effect Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000002519 antifouling agent Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013211374.9A DE102013211374A1 (de) | 2013-06-18 | 2013-06-18 | Transistor und Verfahren zur Herstellung eines Transistors |
| DE102013211374.9 | 2013-06-18 | ||
| PCT/EP2014/061800 WO2014202409A1 (de) | 2013-06-18 | 2014-06-06 | Transistor und verfahren zur herstellung eines transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105283959A true CN105283959A (zh) | 2016-01-27 |
Family
ID=50942676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480034526.XA Pending CN105283959A (zh) | 2013-06-18 | 2014-06-06 | 晶体管和用于制造晶体管的方法 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP3011598A1 (de) |
| JP (1) | JP2016524819A (de) |
| CN (1) | CN105283959A (de) |
| DE (1) | DE102013211374A1 (de) |
| WO (1) | WO2014202409A1 (de) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107230718A (zh) * | 2016-03-25 | 2017-10-03 | 北京大学 | 半导体器件及制造方法 |
| CN109285886A (zh) * | 2017-07-20 | 2019-01-29 | 新唐科技股份有限公司 | 氮化物半导体元件 |
| TWI692039B (zh) * | 2019-05-28 | 2020-04-21 | 大陸商聚力成半導體(重慶)有限公司 | 半導體裝置的製作方法 |
| US10854734B1 (en) | 2019-05-28 | 2020-12-01 | Glc Semiconductor Group (Cq) Co., Ltd. | Manufacturing method of semiconductor device |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015208150A1 (de) * | 2015-05-04 | 2016-11-10 | Robert Bosch Gmbh | Verfahren zum Herstellen einer elektronischen Schaltungsvorrichtung und elektronische Schaltungsvorrichtung |
| CN105140281A (zh) * | 2015-05-27 | 2015-12-09 | 苏州能讯高能半导体有限公司 | 一种半导体器件及其制造方法 |
| DE102015212048A1 (de) * | 2015-06-29 | 2016-12-29 | Robert Bosch Gmbh | Transistor mit hoher Elektronenbeweglichkeit |
| DE102016200825A1 (de) | 2016-01-21 | 2017-07-27 | Robert Bosch Gmbh | Vorrichtung und Verfahren zur Herstellung eines lateralen HEMTs |
| US10217827B2 (en) * | 2016-05-11 | 2019-02-26 | Rfhic Corporation | High electron mobility transistor (HEMT) |
| JP6901880B2 (ja) * | 2017-03-17 | 2021-07-14 | 株式会社東芝 | 窒化物半導体装置 |
| JP7032641B2 (ja) * | 2018-01-11 | 2022-03-09 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| JP7137947B2 (ja) * | 2018-03-22 | 2022-09-15 | ローム株式会社 | 窒化物半導体装置 |
| CN110212028B (zh) * | 2019-05-22 | 2023-03-31 | 山东建筑大学 | 一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件 |
| JP2021114590A (ja) * | 2020-01-21 | 2021-08-05 | 富士通株式会社 | 半導体装置、半導体装置の製造方法及び電子装置 |
| EP4283667A4 (de) * | 2021-02-26 | 2024-04-10 | Huawei Tech Co Ltd | Halbleiterbauelement, elektronische vorrichtung und herstellungsverfahren für halbleiterbauelement |
| US20230420326A1 (en) * | 2022-06-22 | 2023-12-28 | Globalfoundries U.S. Inc. | High-mobility-electron transistors having heat dissipating structures |
| CN117133802A (zh) * | 2023-03-30 | 2023-11-28 | 荣耀终端有限公司 | 一种半导体器件及其制作方法、封装器件、电子设备 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101019238A (zh) * | 2004-09-13 | 2007-08-15 | 罗伯特·博世有限公司 | 用于电压限制的半导体结构 |
| JP2010067662A (ja) * | 2008-09-09 | 2010-03-25 | Nec Corp | 半導体装置及びその製造方法 |
| US7745848B1 (en) * | 2007-08-15 | 2010-06-29 | Nitronex Corporation | Gallium nitride material devices and thermal designs thereof |
| CN102017160A (zh) * | 2008-04-23 | 2011-04-13 | 特兰斯夫公司 | 增强模式ⅲ-n的hemt |
| US20110175142A1 (en) * | 2008-10-22 | 2011-07-21 | Panasonic Corporation | Nitride semiconductor device |
| US20120193677A1 (en) * | 2011-02-02 | 2012-08-02 | Transphorm Inc. | III-N Device Structures and Methods |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001093914A (ja) * | 1999-09-20 | 2001-04-06 | Toshiba Corp | 半導体能動素子及び半導体集積回路 |
| FR2842832B1 (fr) | 2002-07-24 | 2006-01-20 | Lumilog | Procede de realisation par epitaxie en phase vapeur d'un film de nitrure de gallium a faible densite de defaut |
| US9112009B2 (en) * | 2008-09-16 | 2015-08-18 | International Rectifier Corporation | III-nitride device with back-gate and field plate for improving transconductance |
| JP5554024B2 (ja) * | 2009-07-03 | 2014-07-23 | 古河電気工業株式会社 | 窒化物系半導体電界効果トランジスタ |
| JP5755460B2 (ja) * | 2010-02-12 | 2015-07-29 | インターナショナル レクティフィアー コーポレイション | 単一ゲートの誘電体構造を有するエンハンスメントモードのｉｉｉ族窒化物トランジスタ |
| US20120019284A1 (en) * | 2010-07-26 | 2012-01-26 | Infineon Technologies Austria Ag | Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor |
-
2013
- 2013-06-18 DE DE102013211374.9A patent/DE102013211374A1/de not_active Ceased
-
2014
- 2014-06-06 EP EP14730126.1A patent/EP3011598A1/de not_active Withdrawn
- 2014-06-06 WO PCT/EP2014/061800 patent/WO2014202409A1/de active Application Filing
- 2014-06-06 JP JP2016520370A patent/JP2016524819A/ja active Pending
- 2014-06-06 CN CN201480034526.XA patent/CN105283959A/zh active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101019238A (zh) * | 2004-09-13 | 2007-08-15 | 罗伯特·博世有限公司 | 用于电压限制的半导体结构 |
| US7745848B1 (en) * | 2007-08-15 | 2010-06-29 | Nitronex Corporation | Gallium nitride material devices and thermal designs thereof |
| CN102017160A (zh) * | 2008-04-23 | 2011-04-13 | 特兰斯夫公司 | 增强模式ⅲ-n的hemt |
| JP2010067662A (ja) * | 2008-09-09 | 2010-03-25 | Nec Corp | 半導体装置及びその製造方法 |
| US20110175142A1 (en) * | 2008-10-22 | 2011-07-21 | Panasonic Corporation | Nitride semiconductor device |
| US20120193677A1 (en) * | 2011-02-02 | 2012-08-02 | Transphorm Inc. | III-N Device Structures and Methods |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107230718A (zh) * | 2016-03-25 | 2017-10-03 | 北京大学 | 半导体器件及制造方法 |
| CN109285886A (zh) * | 2017-07-20 | 2019-01-29 | 新唐科技股份有限公司 | 氮化物半导体元件 |
| TWI692039B (zh) * | 2019-05-28 | 2020-04-21 | 大陸商聚力成半導體(重慶)有限公司 | 半導體裝置的製作方法 |
| US10854734B1 (en) | 2019-05-28 | 2020-12-01 | Glc Semiconductor Group (Cq) Co., Ltd. | Manufacturing method of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102013211374A1 (de) | 2014-12-18 |
| EP3011598A1 (de) | 2016-04-27 |
| WO2014202409A1 (de) | 2014-12-24 |
| JP2016524819A (ja) | 2016-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105283959A (zh) | 晶体管和用于制造晶体管的方法 | |
| US9245995B2 (en) | Semiconductor device having power metal-oxide-semiconductor transistor | |
| US9117896B2 (en) | Semiconductor device with improved conductivity | |
| CN103187442B (zh) | 集成异质结半导体器件和用于生产该半导体器件的方法 | |
| US8916909B2 (en) | Semiconductor device and method for fabricating a semiconductor device | |
| CN105871365B (zh) | 开关电路和半导体器件 | |
| CN111149213B (zh) | 碳化硅半导体装置及其制造方法 | |
| CN103065968B (zh) | 具有穿孔接触的半导体器件及其制造方法 | |
| CN103367446A (zh) | 应力降低的场效应半导体器件和用于形成该器件的方法 | |
| CN110379807B (zh) | 微电子器件及微电子器件制作方法 | |
| CN104319238A (zh) | 形成高电子迁移率半导体器件的方法及其结构 | |
| US10290707B2 (en) | Semiconductor device | |
| CN103594507B (zh) | 高击穿电压iii族氮化物器件 | |
| US20210104601A1 (en) | High-voltage n-channel hemt device | |
| CN103633063A (zh) | 半导体器件、集成电路及其制造方法 | |
| CN102386124A (zh) | 直接接触的沟槽结构 | |
| KR20080073313A (ko) | 반도체 장치 및 그 제조 방법 | |
| JP2019506740A (ja) | ショットキーバリア整流器 | |
| CN102969288B (zh) | 带有埋置电极的半导体器件 | |
| CN103227199B (zh) | 半导体电子器件 | |
| US20150021666A1 (en) | Transistor having partially or wholly replaced substrate and method of making the same | |
| US20230411504A1 (en) | P-type gate hemt device | |
| CN115274825A (zh) | 一种半导体器件及其制备方法 | |
| WO2020216250A1 (zh) | 一种增强型器件及其制备方法 | |
| CN108352408A (zh) | 半导体装置、电子部件、电子设备以及半导体装置的制造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160127 |