JP2016524819A - トランジスタ、及び、トランジスタの製造方法 - Google Patents
トランジスタ、及び、トランジスタの製造方法 Download PDFInfo
- Publication number
- JP2016524819A JP2016524819A JP2016520370A JP2016520370A JP2016524819A JP 2016524819 A JP2016524819 A JP 2016524819A JP 2016520370 A JP2016520370 A JP 2016520370A JP 2016520370 A JP2016520370 A JP 2016520370A JP 2016524819 A JP2016524819 A JP 2016524819A
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 111
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 239000000463 material Substances 0.000 claims abstract description 85
- 238000011049 filling Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 153
- 229910002601 GaN Inorganic materials 0.000 description 26
- 229910002704 AlGaN Inorganic materials 0.000 description 13
- 238000000151 deposition Methods 0.000 description 13
- 239000002800 charge carrier Substances 0.000 description 12
- 230000008901 benefit Effects 0.000 description 11
- 238000002161 passivation Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000005533 two-dimensional electron gas Effects 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002519 antifouling agent Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013211374.9A DE102013211374A1 (de) | 2013-06-18 | 2013-06-18 | Transistor und Verfahren zur Herstellung eines Transistors |
| DE102013211374.9 | 2013-06-18 | ||
| PCT/EP2014/061800 WO2014202409A1 (de) | 2013-06-18 | 2014-06-06 | Transistor und verfahren zur herstellung eines transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2016524819A true JP2016524819A (ja) | 2016-08-18 |
Family
ID=50942676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016520370A Pending JP2016524819A (ja) | 2013-06-18 | 2014-06-06 | トランジスタ、及び、トランジスタの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP3011598A1 (de) |
| JP (1) | JP2016524819A (de) |
| CN (1) | CN105283959A (de) |
| DE (1) | DE102013211374A1 (de) |
| WO (1) | WO2014202409A1 (de) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018157100A (ja) * | 2017-03-17 | 2018-10-04 | 株式会社東芝 | 窒化物半導体装置 |
| JP2019125600A (ja) * | 2018-01-11 | 2019-07-25 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| JP2019169551A (ja) * | 2018-03-22 | 2019-10-03 | ローム株式会社 | 窒化物半導体装置 |
| JP2021114590A (ja) * | 2020-01-21 | 2021-08-05 | 富士通株式会社 | 半導体装置、半導体装置の製造方法及び電子装置 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015208150A1 (de) * | 2015-05-04 | 2016-11-10 | Robert Bosch Gmbh | Verfahren zum Herstellen einer elektronischen Schaltungsvorrichtung und elektronische Schaltungsvorrichtung |
| CN105140281A (zh) * | 2015-05-27 | 2015-12-09 | 苏州能讯高能半导体有限公司 | 一种半导体器件及其制造方法 |
| DE102015212048A1 (de) * | 2015-06-29 | 2016-12-29 | Robert Bosch Gmbh | Transistor mit hoher Elektronenbeweglichkeit |
| DE102016200825A1 (de) | 2016-01-21 | 2017-07-27 | Robert Bosch Gmbh | Vorrichtung und Verfahren zur Herstellung eines lateralen HEMTs |
| CN107230718A (zh) * | 2016-03-25 | 2017-10-03 | 北京大学 | 半导体器件及制造方法 |
| US10217827B2 (en) * | 2016-05-11 | 2019-02-26 | Rfhic Corporation | High electron mobility transistor (HEMT) |
| TWI624872B (zh) * | 2017-07-20 | 2018-05-21 | 新唐科技股份有限公司 | 氮化物半導體元件 |
| CN110212028B (zh) * | 2019-05-22 | 2023-03-31 | 山东建筑大学 | 一种集成反向二极管和内嵌漏极场板的横向扩散eGaN HEMT器件 |
| TWI692039B (zh) * | 2019-05-28 | 2020-04-21 | 大陸商聚力成半導體(重慶)有限公司 | 半導體裝置的製作方法 |
| US11411099B2 (en) | 2019-05-28 | 2022-08-09 | Glc Semiconductor Group (Cq) Co., Ltd. | Semiconductor device |
| EP4283667A4 (de) * | 2021-02-26 | 2024-04-10 | Huawei Tech Co Ltd | Halbleiterbauelement, elektronische vorrichtung und herstellungsverfahren für halbleiterbauelement |
| US20230420326A1 (en) * | 2022-06-22 | 2023-12-28 | Globalfoundries U.S. Inc. | High-mobility-electron transistors having heat dissipating structures |
| CN117133802A (zh) * | 2023-03-30 | 2023-11-28 | 荣耀终端有限公司 | 一种半导体器件及其制作方法、封装器件、电子设备 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010067662A (ja) * | 2008-09-09 | 2010-03-25 | Nec Corp | 半導体装置及びその製造方法 |
| JP2010103236A (ja) * | 2008-10-22 | 2010-05-06 | Panasonic Corp | 窒化物半導体装置 |
| US7745848B1 (en) * | 2007-08-15 | 2010-06-29 | Nitronex Corporation | Gallium nitride material devices and thermal designs thereof |
| JP2011014789A (ja) * | 2009-07-03 | 2011-01-20 | Furukawa Electric Co Ltd:The | 窒化物系半導体電界効果トランジスタ |
| JP2011205071A (ja) * | 2010-02-12 | 2011-10-13 | Internatl Rectifier Corp | 単一ゲートの誘電体構造を有するエンハンスメントモードのｉｉｉ族窒化物トランジスタ |
| US20120193677A1 (en) * | 2011-02-02 | 2012-08-02 | Transphorm Inc. | III-N Device Structures and Methods |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001093914A (ja) * | 1999-09-20 | 2001-04-06 | Toshiba Corp | 半導体能動素子及び半導体集積回路 |
| FR2842832B1 (fr) | 2002-07-24 | 2006-01-20 | Lumilog | Procede de realisation par epitaxie en phase vapeur d'un film de nitrure de gallium a faible densite de defaut |
| DE102004044141A1 (de) * | 2004-09-13 | 2006-03-30 | Robert Bosch Gmbh | Halbleiteranordnung zur Spannungsbegrenzung |
| US8519438B2 (en) * | 2008-04-23 | 2013-08-27 | Transphorm Inc. | Enhancement mode III-N HEMTs |
| US9112009B2 (en) * | 2008-09-16 | 2015-08-18 | International Rectifier Corporation | III-nitride device with back-gate and field plate for improving transconductance |
| US20120019284A1 (en) * | 2010-07-26 | 2012-01-26 | Infineon Technologies Austria Ag | Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor |
-
2013
- 2013-06-18 DE DE102013211374.9A patent/DE102013211374A1/de not_active Ceased
-
2014
- 2014-06-06 EP EP14730126.1A patent/EP3011598A1/de not_active Withdrawn
- 2014-06-06 WO PCT/EP2014/061800 patent/WO2014202409A1/de active Application Filing
- 2014-06-06 JP JP2016520370A patent/JP2016524819A/ja active Pending
- 2014-06-06 CN CN201480034526.XA patent/CN105283959A/zh active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7745848B1 (en) * | 2007-08-15 | 2010-06-29 | Nitronex Corporation | Gallium nitride material devices and thermal designs thereof |
| JP2010067662A (ja) * | 2008-09-09 | 2010-03-25 | Nec Corp | 半導体装置及びその製造方法 |
| JP2010103236A (ja) * | 2008-10-22 | 2010-05-06 | Panasonic Corp | 窒化物半導体装置 |
| JP2011014789A (ja) * | 2009-07-03 | 2011-01-20 | Furukawa Electric Co Ltd:The | 窒化物系半導体電界効果トランジスタ |
| JP2011205071A (ja) * | 2010-02-12 | 2011-10-13 | Internatl Rectifier Corp | 単一ゲートの誘電体構造を有するエンハンスメントモードのｉｉｉ族窒化物トランジスタ |
| US20120193677A1 (en) * | 2011-02-02 | 2012-08-02 | Transphorm Inc. | III-N Device Structures and Methods |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018157100A (ja) * | 2017-03-17 | 2018-10-04 | 株式会社東芝 | 窒化物半導体装置 |
| JP2019125600A (ja) * | 2018-01-11 | 2019-07-25 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| JP7032641B2 (ja) | 2018-01-11 | 2022-03-09 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| JP2019169551A (ja) * | 2018-03-22 | 2019-10-03 | ローム株式会社 | 窒化物半導体装置 |
| JP7137947B2 (ja) | 2018-03-22 | 2022-09-15 | ローム株式会社 | 窒化物半導体装置 |
| JP2021114590A (ja) * | 2020-01-21 | 2021-08-05 | 富士通株式会社 | 半導体装置、半導体装置の製造方法及び電子装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102013211374A1 (de) | 2014-12-18 |
| EP3011598A1 (de) | 2016-04-27 |
| CN105283959A (zh) | 2016-01-27 |
| WO2014202409A1 (de) | 2014-12-24 |
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