CN105280771B - 发光器件 - Google Patents

发光器件 Download PDF

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Publication number
CN105280771B
CN105280771B CN201510292481.2A CN201510292481A CN105280771B CN 105280771 B CN105280771 B CN 105280771B CN 201510292481 A CN201510292481 A CN 201510292481A CN 105280771 B CN105280771 B CN 105280771B
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CN
China
Prior art keywords
layer
semiconductor layer
conductive
window
luminescent device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510292481.2A
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English (en)
Chinese (zh)
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CN105280771A (zh
Inventor
文智炯
李尚烈
朴范斗
金青松
朴相绿
郑炳学
李泰庸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
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LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020140065759A external-priority patent/KR102199992B1/ko
Priority claimed from KR1020140065763A external-priority patent/KR102237105B1/ko
Priority claimed from KR1020140073251A external-priority patent/KR102200005B1/ko
Priority claimed from KR1020140073253A external-priority patent/KR102187511B1/ko
Priority claimed from KR1020140073250A external-priority patent/KR102187504B1/ko
Priority claimed from KR1020140073252A external-priority patent/KR102187508B1/ko
Priority claimed from KR1020140073282A external-priority patent/KR102187514B1/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN105280771A publication Critical patent/CN105280771A/zh
Publication of CN105280771B publication Critical patent/CN105280771B/zh
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

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  • Led Devices (AREA)
CN201510292481.2A 2014-05-30 2015-06-01 发光器件 Active CN105280771B (zh)

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
KR10-2014-0065763 2014-05-30
KR1020140065759A KR102199992B1 (ko) 2014-05-30 2014-05-30 발광소자
KR1020140065763A KR102237105B1 (ko) 2014-05-30 2014-05-30 발광소자
KR10-2014-0065759 2014-05-30
KR10-2014-0073252 2014-06-17
KR1020140073253A KR102187511B1 (ko) 2014-06-17 2014-06-17 발광소자
KR1020140073250A KR102187504B1 (ko) 2014-06-17 2014-06-17 발광소자
KR1020140073252A KR102187508B1 (ko) 2014-06-17 2014-06-17 발광소자
KR10-2014-0073253 2014-06-17
KR10-2014-0073282 2014-06-17
KR10-2014-0073251 2014-06-17
KR1020140073251A KR102200005B1 (ko) 2014-06-17 2014-06-17 발광소자
KR1020140073282A KR102187514B1 (ko) 2014-06-17 2014-06-17 발광소자
KR10-2014-0073250 2014-06-17

Publications (2)

Publication Number Publication Date
CN105280771A CN105280771A (zh) 2016-01-27
CN105280771B true CN105280771B (zh) 2019-01-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510292481.2A Active CN105280771B (zh) 2014-05-30 2015-06-01 发光器件

Country Status (4)

Country Link
US (1) US9673354B2 (enExample)
EP (1) EP2950355B1 (enExample)
JP (1) JP6595801B2 (enExample)
CN (1) CN105280771B (enExample)

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US9472719B2 (en) * 2015-02-18 2016-10-18 Epistar Corporation Light-emitting diode
JP6332301B2 (ja) * 2016-02-25 2018-05-30 日亜化学工業株式会社 発光素子
JP6668863B2 (ja) * 2016-03-22 2020-03-18 日亜化学工業株式会社 発光素子
JP6826395B2 (ja) * 2016-08-26 2021-02-03 ローム株式会社 半導体発光素子
DE102017101637A1 (de) * 2017-01-27 2018-08-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102017104719A1 (de) 2017-03-07 2018-09-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper und Halbleiterchip
CN109103163A (zh) * 2017-06-20 2018-12-28 稳懋半导体股份有限公司 用以减少化合物半导体晶圆变形的改良结构
CN107403860B (zh) * 2017-08-08 2019-06-21 天津三安光电有限公司 牺牲层结构及采用该结构剥离材料层的方法
DE102017123542A1 (de) * 2017-10-10 2019-04-11 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
US11024767B2 (en) * 2017-10-17 2021-06-01 Lumileds Llc Nano-photonics reflector for LED emitters
CN107958945B (zh) * 2017-11-20 2020-07-03 扬州乾照光电有限公司 一种无介质膜的倒装发光二极管芯片及其制作方法
DE102018127201A1 (de) 2018-10-31 2020-04-30 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
CN115312645B (zh) * 2019-01-17 2025-10-17 泉州三安半导体科技有限公司 一种半导体发光元件
DE102019103638A1 (de) 2019-02-13 2020-08-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement mit abschnitten einer leitfähigen schicht und verfahren zur herstellung eines optoelektronischen halbleiterbauelements
CN109920893A (zh) * 2019-02-20 2019-06-21 南昌大学 一种具有良好电流扩展特性的反极性AlGaInP LED芯片及制备方法
JP6858899B2 (ja) * 2019-03-26 2021-04-14 Ｄｏｗａエレクトロニクス株式会社 点光源型発光ダイオード及びその製造方法
WO2020196411A1 (ja) 2019-03-26 2020-10-01 Ｄｏｗａエレクトロニクス株式会社 点光源型発光ダイオード及びその製造方法
US20200365769A1 (en) * 2019-05-16 2020-11-19 Epistar Corporation Semiconductor device
JP7360822B2 (ja) * 2019-06-13 2023-10-13 ローム株式会社 半導体発光装置
TWI838392B (zh) * 2019-08-08 2024-04-11 晶元光電股份有限公司 光電半導體裝置
CN110571319A (zh) * 2019-10-17 2019-12-13 扬州乾照光电有限公司 一种多堆栈odr的倒装led结构及制作方法
WO2021095717A1 (ja) * 2019-11-12 2021-05-20 ソニー株式会社 半導体発光素子および電子機器
CN111668355B (zh) * 2020-05-29 2024-11-15 山西中科潞安紫外光电科技有限公司 一种垂直近紫外发光二极管及其制备方法
CN112420891B (zh) * 2020-09-21 2022-09-09 厦门士兰明镓化合物半导体有限公司 发光二极管芯片及其制作方法
US12125956B2 (en) * 2021-03-16 2024-10-22 Epistar Corporation Semiconductor device and semiconductor component including the same
TW202318687A (zh) * 2021-10-26 2023-05-01 晶元光電股份有限公司 半導體元件及包含其之半導體組件
WO2023235375A1 (en) * 2022-06-01 2023-12-07 Creeled, Inc. Current spreading layer structures for light-emitting diode chips
KR20240168596A (ko) * 2023-05-23 2024-12-02 엘지전자 주식회사 화소용 반도체 발광소자 및 이의 제조방법
US20250275307A1 (en) * 2024-02-28 2025-08-28 Creeled, Inc. Light-emitting diode chip structures with electrode extensions and gradient vias

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CN101312229A (zh) * 2007-05-24 2008-11-26 日立电线株式会社 化合物半导体晶片、发光二极管及其制备方法
CN101971370A (zh) * 2008-04-30 2011-02-09 欧司朗光电半导体有限公司 发光二极管芯片
CN102760815A (zh) * 2011-04-26 2012-10-31 株式会社东芝 半导体发光元件

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EP0886326A2 (en) * 1997-06-06 1998-12-23 Hewlett-Packard Company Separate hole injection structure for improved reliability light emitting semiconductor devices
CN101312229A (zh) * 2007-05-24 2008-11-26 日立电线株式会社 化合物半导体晶片、发光二极管及其制备方法
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CN102760815A (zh) * 2011-04-26 2012-10-31 株式会社东芝 半导体发光元件

Also Published As

Publication number Publication date
EP2950355A1 (en) 2015-12-02
US20150349220A1 (en) 2015-12-03
EP2950355B1 (en) 2016-12-28
CN105280771A (zh) 2016-01-27
JP6595801B2 (ja) 2019-10-23
JP2015228497A (ja) 2015-12-17
US9673354B2 (en) 2017-06-06

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Effective date of registration: 20210831

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China