CN105229530A - 使用自组装的聚合物纳米掩模的表面纳米制造方法 - Google Patents

使用自组装的聚合物纳米掩模的表面纳米制造方法 Download PDF

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Publication number
CN105229530A
CN105229530A CN201480005862.1A CN201480005862A CN105229530A CN 105229530 A CN105229530 A CN 105229530A CN 201480005862 A CN201480005862 A CN 201480005862A CN 105229530 A CN105229530 A CN 105229530A
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CN
China
Prior art keywords
hydrophilic
substrate surface
self
substrate
block copolymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480005862.1A
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English (en)
Chinese (zh)
Inventor
M·A·恰萨达
J·王
张盈
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Corning Inc
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Corning Inc
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Application filed by Corning Inc filed Critical Corning Inc
Publication of CN105229530A publication Critical patent/CN105229530A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/888—Shaping or removal of materials, e.g. etching

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
CN201480005862.1A 2013-01-24 2014-01-21 使用自组装的聚合物纳米掩模的表面纳米制造方法 Pending CN105229530A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/748,840 2013-01-24
US13/748,840 US9050621B2 (en) 2013-01-24 2013-01-24 Surface nanofabrication methods using self-assembled polymer nanomasks
PCT/US2014/012228 WO2014116547A1 (en) 2013-01-24 2014-01-21 Surface nanofabrication methods using self-assembled polymer nanomasks

Publications (1)

Publication Number Publication Date
CN105229530A true CN105229530A (zh) 2016-01-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480005862.1A Pending CN105229530A (zh) 2013-01-24 2014-01-21 使用自组装的聚合物纳米掩模的表面纳米制造方法

Country Status (6)

Country Link
US (1) US9050621B2 (enExample)
EP (1) EP2948817B1 (enExample)
JP (1) JP6383737B2 (enExample)
KR (1) KR20150111967A (enExample)
CN (1) CN105229530A (enExample)
WO (1) WO2014116547A1 (enExample)

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CN108231547A (zh) * 2016-12-15 2018-06-29 台湾积体电路制造股份有限公司 半导体装置的形成方法

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US10000664B2 (en) * 2012-03-27 2018-06-19 Nissan Chemical Industries, Ltd. Underlayer film-forming composition for self-assembled films
EP2927747A3 (en) * 2014-03-31 2016-03-09 IMEC vzw Quality assessment of directed self-assembling method
JP6589576B2 (ja) * 2015-11-09 2019-10-16 富士通株式会社 人工指紋液、及び耐指紋性の評価方法
PL3668927T3 (pl) 2017-09-12 2024-06-24 Eth Zurich Przezbłonowe polimerosomy z gradientem pH do ilościowego oznaczania amoniaku w płynach ustrojowych
JP2019079852A (ja) * 2017-10-20 2019-05-23 東芝メモリ株式会社 パターン形成方法
CN114522746B (zh) * 2020-11-23 2024-07-16 京东方科技集团股份有限公司 一种生物医学微流控芯片及其修饰方法
CN116060274B (zh) * 2021-10-29 2023-12-19 佛山市思博睿科技有限公司 等离子化学气相沉积自修复疏水纳米膜的制备方法
JP7648919B2 (ja) * 2022-12-22 2025-03-19 ダイキン工業株式会社 処理方法および電子デバイス

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JP3874989B2 (ja) * 2000-03-21 2007-01-31 シャープ株式会社 パターンの形成方法
US8133534B2 (en) * 2004-11-22 2012-03-13 Wisconsin Alumni Research Foundation Methods and compositions for forming patterns with isolated or discrete features using block copolymer materials
US7347953B2 (en) * 2006-02-02 2008-03-25 International Business Machines Corporation Methods for forming improved self-assembled patterns of block copolymers
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CN108231547A (zh) * 2016-12-15 2018-06-29 台湾积体电路制造股份有限公司 半导体装置的形成方法
CN108231547B (zh) * 2016-12-15 2022-01-21 台湾积体电路制造股份有限公司 半导体装置的形成方法

Also Published As

Publication number Publication date
EP2948817A1 (en) 2015-12-02
US9050621B2 (en) 2015-06-09
JP6383737B2 (ja) 2018-08-29
WO2014116547A1 (en) 2014-07-31
EP2948817B1 (en) 2019-06-19
KR20150111967A (ko) 2015-10-06
JP2016507158A (ja) 2016-03-07
US20140202984A1 (en) 2014-07-24

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Application publication date: 20160106