JP6383737B2 - ポリマーナノマスクを使用した表面ナノ複製 - Google Patents

ポリマーナノマスクを使用した表面ナノ複製 Download PDF

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Publication number
JP6383737B2
JP6383737B2 JP2015555205A JP2015555205A JP6383737B2 JP 6383737 B2 JP6383737 B2 JP 6383737B2 JP 2015555205 A JP2015555205 A JP 2015555205A JP 2015555205 A JP2015555205 A JP 2015555205A JP 6383737 B2 JP6383737 B2 JP 6383737B2
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Japan
Prior art keywords
hydrophilic
self
nanopillar
block copolymer
substrate surface
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Expired - Fee Related
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JP2015555205A
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Japanese (ja)
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JP2016507158A5 (enExample
JP2016507158A (ja
Inventor
アレハンドロ ケサダ，マーク
アレハンドロ ケサダ，マーク
ワン，ジエングオ
ヂャン，イン
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Corning Inc
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Corning Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/888—Shaping or removal of materials, e.g. etching

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
JP2015555205A 2013-01-24 2014-01-21 ポリマーナノマスクを使用した表面ナノ複製 Expired - Fee Related JP6383737B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/748,840 US9050621B2 (en) 2013-01-24 2013-01-24 Surface nanofabrication methods using self-assembled polymer nanomasks
US13/748,840 2013-01-24
PCT/US2014/012228 WO2014116547A1 (en) 2013-01-24 2014-01-21 Surface nanofabrication methods using self-assembled polymer nanomasks

Publications (3)

Publication Number Publication Date
JP2016507158A JP2016507158A (ja) 2016-03-07
JP2016507158A5 JP2016507158A5 (enExample) 2018-07-12
JP6383737B2 true JP6383737B2 (ja) 2018-08-29

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JP2015555205A Expired - Fee Related JP6383737B2 (ja) 2013-01-24 2014-01-21 ポリマーナノマスクを使用した表面ナノ複製

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Country Link
US (1) US9050621B2 (enExample)
EP (1) EP2948817B1 (enExample)
JP (1) JP6383737B2 (enExample)
KR (1) KR20150111967A (enExample)
CN (1) CN105229530A (enExample)
WO (1) WO2014116547A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10000664B2 (en) * 2012-03-27 2018-06-19 Nissan Chemical Industries, Ltd. Underlayer film-forming composition for self-assembled films
EP2927747A3 (en) * 2014-03-31 2016-03-09 IMEC vzw Quality assessment of directed self-assembling method
JP6589576B2 (ja) * 2015-11-09 2019-10-16 富士通株式会社 人工指紋液、及び耐指紋性の評価方法
US10163632B2 (en) * 2016-12-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Material composition and process for substrate modification
US11713376B2 (en) 2017-09-12 2023-08-01 Eth Zurich Transmembrane pH-gradient polymersomes for the quantification of ammonia in body fluids
JP2019079852A (ja) * 2017-10-20 2019-05-23 東芝メモリ株式会社 パターン形成方法
CN114522746B (zh) * 2020-11-23 2024-07-16 京东方科技集团股份有限公司 一种生物医学微流控芯片及其修饰方法
CN116060274B (zh) * 2021-10-29 2023-12-19 佛山市思博睿科技有限公司 等离子化学气相沉积自修复疏水纳米膜的制备方法
JP7648919B2 (ja) * 2022-12-22 2025-03-19 ダイキン工業株式会社 処理方法および電子デバイス

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JPH1166654A (ja) * 1997-08-18 1999-03-09 Hitachi Ltd 微細構造の作製法、微細構造、磁気センサ、磁気記録媒体および光磁気記録媒体
JP3940546B2 (ja) * 1999-06-07 2007-07-04 株式会社東芝 パターン形成方法およびパターン形成材料
JP3874989B2 (ja) * 2000-03-21 2007-01-31 シャープ株式会社 パターンの形成方法
US8133534B2 (en) * 2004-11-22 2012-03-13 Wisconsin Alumni Research Foundation Methods and compositions for forming patterns with isolated or discrete features using block copolymer materials
US7347953B2 (en) * 2006-02-02 2008-03-25 International Business Machines Corporation Methods for forming improved self-assembled patterns of block copolymers
US8361337B2 (en) * 2007-03-19 2013-01-29 The University Of Massachusetts Method of producing nanopatterned templates
US7959975B2 (en) * 2007-04-18 2011-06-14 Micron Technology, Inc. Methods of patterning a substrate
US8080615B2 (en) 2007-06-19 2011-12-20 Micron Technology, Inc. Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
JP4445538B2 (ja) * 2007-09-26 2010-04-07 株式会社東芝 パターン形成方法
US20090092803A1 (en) 2007-09-27 2009-04-09 Massachusetts Institute Of Technology Self-assembly technique applicable to large areas and nanofabrication
US20090117360A1 (en) * 2007-11-01 2009-05-07 International Business Machines Corporation Self-assembled material pattern transfer contrast enhancement
JP2009256592A (ja) * 2008-03-18 2009-11-05 Fujifilm Corp 多孔質膜
US8425982B2 (en) * 2008-03-21 2013-04-23 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
US8426313B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US8114301B2 (en) * 2008-05-02 2012-02-14 Micron Technology, Inc. Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
US8518837B2 (en) * 2008-09-25 2013-08-27 The University Of Massachusetts Method of producing nanopatterned articles using surface-reconstructed block copolymer films
JP2010142881A (ja) * 2008-12-16 2010-07-01 Fujifilm Corp 有機−無機複合体層を備える構造体、およびその製造方法
JP5206622B2 (ja) * 2009-08-07 2013-06-12 三菱瓦斯化学株式会社 金属微細構造体のパターン倒壊抑制用処理液及びこれを用いた金属微細構造体の製造方法
US8268180B2 (en) * 2010-01-26 2012-09-18 Wisconsin Alumni Research Foundation Methods of fabricating large-area, semiconducting nanoperforated graphene materials
US8071467B2 (en) * 2010-04-07 2011-12-06 Micron Technology, Inc. Methods of forming patterns, and methods of forming integrated circuits
US9956743B2 (en) 2010-12-20 2018-05-01 The Regents Of The University Of California Superhydrophobic and superoleophobic nanosurfaces
US8476168B2 (en) * 2011-01-26 2013-07-02 International Business Machines Corporation Non-conformal hardmask deposition for through silicon etch
US20120196094A1 (en) 2011-01-31 2012-08-02 Seagate Technology Llc Hybrid-guided block copolymer assembly
US9299381B2 (en) * 2011-02-07 2016-03-29 Wisconsin Alumni Research Foundation Solvent annealing block copolymers on patterned substrates
CN102915907B (zh) * 2011-08-02 2015-05-13 中芯国际集成电路制造(北京)有限公司 一种半导体器件制作方法
EP2594995A1 (en) 2011-11-16 2013-05-22 University College Cork A method for providing a nanopattern of metal oxide nanostructures on a substrate
US9513553B2 (en) 2012-04-13 2016-12-06 Asml Netherlands B.V. Methods of providing patterned epitaxy templates for self-assemblable block copolymers for use in device lithography
EP2717296B1 (en) * 2012-10-02 2016-08-31 Imec Etching of block-copolymers

Also Published As

Publication number Publication date
EP2948817B1 (en) 2019-06-19
EP2948817A1 (en) 2015-12-02
CN105229530A (zh) 2016-01-06
WO2014116547A1 (en) 2014-07-31
US20140202984A1 (en) 2014-07-24
KR20150111967A (ko) 2015-10-06
US9050621B2 (en) 2015-06-09
JP2016507158A (ja) 2016-03-07

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