KR20150111967A - 자기 조립 폴리머 나노마스크를 이용한 표면 나노제조 방법 - Google Patents

자기 조립 폴리머 나노마스크를 이용한 표면 나노제조 방법 Download PDF

Info

Publication number
KR20150111967A
KR20150111967A KR1020157022761A KR20157022761A KR20150111967A KR 20150111967 A KR20150111967 A KR 20150111967A KR 1020157022761 A KR1020157022761 A KR 1020157022761A KR 20157022761 A KR20157022761 A KR 20157022761A KR 20150111967 A KR20150111967 A KR 20150111967A
Authority
KR
South Korea
Prior art keywords
hydrophilic
self
substrate surface
block copolymer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020157022761A
Other languages
English (en)
Korean (ko)
Inventor
마크 알레잔드로 퀘사다
지앙구오 왕
잉 장
Original Assignee
코닝 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 코닝 인코포레이티드 filed Critical 코닝 인코포레이티드
Publication of KR20150111967A publication Critical patent/KR20150111967A/ko
Abandoned legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H01L21/0337—
    • H01L21/3142—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/888—Shaping or removal of materials, e.g. etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020157022761A 2013-01-24 2014-01-21 자기 조립 폴리머 나노마스크를 이용한 표면 나노제조 방법 Abandoned KR20150111967A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/748,840 US9050621B2 (en) 2013-01-24 2013-01-24 Surface nanofabrication methods using self-assembled polymer nanomasks
US13/748,840 2013-01-24
PCT/US2014/012228 WO2014116547A1 (en) 2013-01-24 2014-01-21 Surface nanofabrication methods using self-assembled polymer nanomasks

Publications (1)

Publication Number Publication Date
KR20150111967A true KR20150111967A (ko) 2015-10-06

Family

ID=50031633

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157022761A Abandoned KR20150111967A (ko) 2013-01-24 2014-01-21 자기 조립 폴리머 나노마스크를 이용한 표면 나노제조 방법

Country Status (6)

Country Link
US (1) US9050621B2 (enExample)
EP (1) EP2948817B1 (enExample)
JP (1) JP6383737B2 (enExample)
KR (1) KR20150111967A (enExample)
CN (1) CN105229530A (enExample)
WO (1) WO2014116547A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013146600A1 (ja) * 2012-03-27 2013-10-03 日産化学工業株式会社 自己組織化膜の下層膜形成組成物
EP2927747A3 (en) * 2014-03-31 2016-03-09 IMEC vzw Quality assessment of directed self-assembling method
JP6589576B2 (ja) * 2015-11-09 2019-10-16 富士通株式会社 人工指紋液、及び耐指紋性の評価方法
US10163632B2 (en) * 2016-12-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Material composition and process for substrate modification
JP7203438B2 (ja) 2017-09-12 2023-01-13 イーティーエイチ・チューリッヒ 体液中アンモニア定量用の膜貫通ｐＨ勾配ポリマーソーム
JP2019079852A (ja) * 2017-10-20 2019-05-23 東芝メモリ株式会社 パターン形成方法
CN114522746B (zh) * 2020-11-23 2024-07-16 京东方科技集团股份有限公司 一种生物医学微流控芯片及其修饰方法
CN116060274B (zh) * 2021-10-29 2023-12-19 佛山市思博睿科技有限公司 等离子化学气相沉积自修复疏水纳米膜的制备方法
JP7648919B2 (ja) * 2022-12-22 2025-03-19 ダイキン工業株式会社 処理方法および電子デバイス

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1166654A (ja) * 1997-08-18 1999-03-09 Hitachi Ltd 微細構造の作製法、微細構造、磁気センサ、磁気記録媒体および光磁気記録媒体
JP3940546B2 (ja) * 1999-06-07 2007-07-04 株式会社東芝 パターン形成方法およびパターン形成材料
JP3874989B2 (ja) * 2000-03-21 2007-01-31 シャープ株式会社 パターンの形成方法
US8133534B2 (en) * 2004-11-22 2012-03-13 Wisconsin Alumni Research Foundation Methods and compositions for forming patterns with isolated or discrete features using block copolymer materials
US7347953B2 (en) * 2006-02-02 2008-03-25 International Business Machines Corporation Methods for forming improved self-assembled patterns of block copolymers
WO2008115848A1 (en) * 2007-03-19 2008-09-25 University Of Massachusetts Method of producing nanopatterned templates
US7959975B2 (en) * 2007-04-18 2011-06-14 Micron Technology, Inc. Methods of patterning a substrate
US8080615B2 (en) 2007-06-19 2011-12-20 Micron Technology, Inc. Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
JP4445538B2 (ja) * 2007-09-26 2010-04-07 株式会社東芝 パターン形成方法
US20090092803A1 (en) 2007-09-27 2009-04-09 Massachusetts Institute Of Technology Self-assembly technique applicable to large areas and nanofabrication
US20090117360A1 (en) * 2007-11-01 2009-05-07 International Business Machines Corporation Self-assembled material pattern transfer contrast enhancement
JP2009256592A (ja) * 2008-03-18 2009-11-05 Fujifilm Corp 多孔質膜
US8425982B2 (en) * 2008-03-21 2013-04-23 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
US8426313B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US8114301B2 (en) * 2008-05-02 2012-02-14 Micron Technology, Inc. Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
US8518837B2 (en) * 2008-09-25 2013-08-27 The University Of Massachusetts Method of producing nanopatterned articles using surface-reconstructed block copolymer films
JP2010142881A (ja) * 2008-12-16 2010-07-01 Fujifilm Corp 有機−無機複合体層を備える構造体、およびその製造方法
JP5206622B2 (ja) * 2009-08-07 2013-06-12 三菱瓦斯化学株式会社 金属微細構造体のパターン倒壊抑制用処理液及びこれを用いた金属微細構造体の製造方法
US8268180B2 (en) * 2010-01-26 2012-09-18 Wisconsin Alumni Research Foundation Methods of fabricating large-area, semiconducting nanoperforated graphene materials
US8071467B2 (en) 2010-04-07 2011-12-06 Micron Technology, Inc. Methods of forming patterns, and methods of forming integrated circuits
WO2012087352A2 (en) * 2010-12-20 2012-06-28 The Regents Of The University Of California Superhydrophobic and superoleophobic nanosurfaces
US8476168B2 (en) * 2011-01-26 2013-07-02 International Business Machines Corporation Non-conformal hardmask deposition for through silicon etch
US20120196094A1 (en) 2011-01-31 2012-08-02 Seagate Technology Llc Hybrid-guided block copolymer assembly
US9299381B2 (en) * 2011-02-07 2016-03-29 Wisconsin Alumni Research Foundation Solvent annealing block copolymers on patterned substrates
CN102915907B (zh) * 2011-08-02 2015-05-13 中芯国际集成电路制造(北京)有限公司 一种半导体器件制作方法
EP2594995A1 (en) 2011-11-16 2013-05-22 University College Cork A method for providing a nanopattern of metal oxide nanostructures on a substrate
WO2013152928A1 (en) 2012-04-13 2013-10-17 Asml Netherlands B.V. Methods of providing patterned epitaxy templates for self-assemblable block copolymers for use in device lithography
EP2717296B1 (en) * 2012-10-02 2016-08-31 Imec Etching of block-copolymers

Also Published As

Publication number Publication date
EP2948817A1 (en) 2015-12-02
EP2948817B1 (en) 2019-06-19
US9050621B2 (en) 2015-06-09
CN105229530A (zh) 2016-01-06
JP6383737B2 (ja) 2018-08-29
US20140202984A1 (en) 2014-07-24
WO2014116547A1 (en) 2014-07-31
JP2016507158A (ja) 2016-03-07

Similar Documents

Publication Publication Date Title
US9050621B2 (en) Surface nanofabrication methods using self-assembled polymer nanomasks
JP6368323B2 (ja) ポリマーナノマスクを使用した表面ナノ複製
JP5042110B2 (ja) ナノ細孔の製造
KR102018932B1 (ko) 박막 블록 공중합체의 배향 조절을 위한 무수물 공중합체 톱 코트
CN102015524B (zh) 聚合物材料，在衬底上形成纳米结构聚合物材料的方法和使用该聚合物材料蚀刻衬底的方法
JP6132854B2 (ja) ブロックコポリマー薄膜においてドメインの配向性を制御するための化学蒸着された膜の使用
KR101740276B1 (ko) 블럭 코폴리머 특성을 제어하는 방법 및 이로부터 제조된 제품
Gowrishankar et al. Fabrication of densely packed, well-ordered, high-aspect-ratio silicon nanopillars over large areas using block copolymer lithography
TWI632430B (zh) 超疏油表面及其製造方法
WO2012036634A1 (en) Process for altering the wetting properties of a substrate surface
WO2018102340A1 (en) Multi-scale block copolymer coating that induces hydrophobic properties
JP2008041648A (ja) 質量分析用基板及び質量分析用基板の製造方法
WO2017093840A1 (en) Micron patterned silicone hard-coated polymer (shc-p) surfaces
TW201920323A (zh) 用於控制嵌段共聚物的奈米域定向之方法
JP2010138286A (ja) 多孔質膜およびその製造方法
EP4245798A1 (en) Process for the surface modification of a polymer substrate by formation of nanopillars
CN103482564A (zh) 基于纳米粒子掩膜刻蚀的图形化亲疏复合表面制备工艺
TWI513577B (zh) 用於薄膜嵌段共聚物之取向控制之酸酐共聚物面塗層
Kim Nano-structured self-cleaning superhydrophobic glass

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PC1904 Unpaid initial registration fee

St.27 status event code: A-2-2-U10-U14-oth-PC1904

St.27 status event code: N-2-6-B10-B12-nap-PC1904

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000