CN105190893B - 发光结构和底座 - Google Patents

发光结构和底座 Download PDF

Info

Publication number
CN105190893B
CN105190893B CN201480016065.3A CN201480016065A CN105190893B CN 105190893 B CN105190893 B CN 105190893B CN 201480016065 A CN201480016065 A CN 201480016065A CN 105190893 B CN105190893 B CN 105190893B
Authority
CN
China
Prior art keywords
leds
light emitting
base
contact
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480016065.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN105190893A (zh
Inventor
K-H.H.曹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds Holding BV
Original Assignee
Lumileds Holding BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumileds Holding BV filed Critical Lumileds Holding BV
Publication of CN105190893A publication Critical patent/CN105190893A/zh
Application granted granted Critical
Publication of CN105190893B publication Critical patent/CN105190893B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0364Manufacture or treatment of packages of interconnections

Landscapes

  • Led Device Packages (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Devices (AREA)
CN201480016065.3A 2013-03-15 2014-03-05 发光结构和底座 Active CN105190893B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361798858P 2013-03-15 2013-03-15
US61/798858 2013-03-15
PCT/IB2014/059466 WO2014141009A1 (en) 2013-03-15 2014-03-05 Light emitting structure and mount

Publications (2)

Publication Number Publication Date
CN105190893A CN105190893A (zh) 2015-12-23
CN105190893B true CN105190893B (zh) 2018-11-13

Family

ID=50390146

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480016065.3A Active CN105190893B (zh) 2013-03-15 2014-03-05 发光结构和底座

Country Status (7)

Country Link
US (2) US9478712B2 (enExample)
EP (1) EP2973714B1 (enExample)
JP (2) JP6649773B2 (enExample)
KR (1) KR101991960B1 (enExample)
CN (1) CN105190893B (enExample)
TW (1) TWI627739B (enExample)
WO (1) WO2014141009A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6927970B2 (ja) * 2015-11-20 2021-09-01 ルミレッズ ホールディング ベーフェー 異なる電気的構成を可能にするダイボンドパッド設計
KR102586691B1 (ko) * 2015-11-20 2023-10-11 루미리즈 홀딩 비.브이. 상이한 전기적 구성들을 가능하게 하는 다이 본드 패드 설계
EP4160679B1 (en) * 2020-04-28 2024-01-31 Nichia Corporation Light-emitting device
JP7114854B2 (ja) * 2020-04-28 2022-08-09 日亜化学工業株式会社 発光装置
CN115020566A (zh) * 2020-08-20 2022-09-06 厦门三安光电有限公司 发光二极管模组、背光模组和显示模组
CN120660465A (zh) * 2022-12-16 2025-09-16 亮锐有限责任公司 用于密集封装的阵列的管芯金属化

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101846249A (zh) * 2005-06-28 2010-09-29 首尔Opto仪器股份有限公司 用于交流电力操作的发光装置
EP2442362A1 (en) * 2010-10-13 2012-04-18 Intematix Technology Center Corp. Light emitting device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6547249B2 (en) 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
JP4254141B2 (ja) * 2001-07-30 2009-04-15 日亜化学工業株式会社 発光装置
JP4438492B2 (ja) * 2003-09-11 2010-03-24 日亜化学工業株式会社 半導体装置およびその製造方法
US8076680B2 (en) 2005-03-11 2011-12-13 Seoul Semiconductor Co., Ltd. LED package having an array of light emitting cells coupled in series
WO2007018360A1 (en) * 2005-08-09 2007-02-15 Seoul Opto Device Co., Ltd. Ac light emitting diode and method for fabricating the same
JP4856463B2 (ja) 2005-10-17 2012-01-18 株式会社 日立ディスプレイズ 液晶表示装置
US7910395B2 (en) * 2006-09-13 2011-03-22 Helio Optoelectronics Corporation LED structure
US10295147B2 (en) 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
TWI419360B (zh) 2008-08-11 2013-12-11 璨圓光電股份有限公司 Solid crystal light-emitting device having an insulating layer and a method for manufacturing the same
US8648359B2 (en) * 2010-06-28 2014-02-11 Cree, Inc. Light emitting devices and methods
JP2012028749A (ja) * 2010-07-22 2012-02-09 Seoul Opto Devices Co Ltd 発光ダイオード
US9053958B2 (en) * 2011-01-31 2015-06-09 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
RU2014113263A (ru) * 2011-09-06 2015-10-20 Конинклейке Филипс Н.В. Топология распределения и соединения led в матрице большой площади
US8760068B1 (en) * 2011-09-07 2014-06-24 Iml International Driving LEDs in LCD backlight
JP2013118292A (ja) * 2011-12-02 2013-06-13 Citizen Electronics Co Ltd Led発光装置
US9039746B2 (en) * 2013-02-08 2015-05-26 Cree, Inc. Solid state light emitting devices including adjustable melatonin suppression effects

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101846249A (zh) * 2005-06-28 2010-09-29 首尔Opto仪器股份有限公司 用于交流电力操作的发光装置
EP2442362A1 (en) * 2010-10-13 2012-04-18 Intematix Technology Center Corp. Light emitting device

Also Published As

Publication number Publication date
EP2973714B1 (en) 2019-05-08
JP6649773B2 (ja) 2020-02-19
EP2973714A1 (en) 2016-01-20
WO2014141009A1 (en) 2014-09-18
KR20150132410A (ko) 2015-11-25
JP6928128B2 (ja) 2021-09-01
CN105190893A (zh) 2015-12-23
US20150380610A1 (en) 2015-12-31
JP2020057821A (ja) 2020-04-09
US20170025470A1 (en) 2017-01-26
US9478712B2 (en) 2016-10-25
TWI627739B (zh) 2018-06-21
US10134805B2 (en) 2018-11-20
TW201503339A (zh) 2015-01-16
KR101991960B1 (ko) 2019-06-25
JP2016510180A (ja) 2016-04-04

Similar Documents

Publication Publication Date Title
JP6928128B2 (ja) 発光構造及びマウント
JP5711874B2 (ja) 発光ダイオードのチップレベルパッケージ
US7704771B2 (en) Light emitting device, method of manufacturing the same and monolithic light emitting diode array
US20200203565A1 (en) Micro light emitting diode and manufacturing method thereof
US7880181B2 (en) Light emitting diode with improved current spreading performance
US20190103508A1 (en) Method of separating light emitting devices formed on a substrate wafer
US20090272971A1 (en) Light emitting device having a pluralilty of light emitting cells and package mounting the same
KR101926358B1 (ko) 반도체 발광장치 및 조명장치
CN106575688A (zh) 半导体器件及其制造方法
CN103367576A (zh) 半导体发光装置、发光二级管阵列与其制法
TWI740488B (zh) 用於流體組裝的平面表面貼裝微型led及其製備方法
US7902562B2 (en) Light emitting diode device that includes a three dimensional cloud structure and manufacturing method thereof
WO2012030527A1 (en) Solid state lighting devices with point contacts and associated methods of manufacturing
RU2523777C2 (ru) Продолжение контактных площадок до края кристалла с электрической изоляцией
US12002842B2 (en) Light emitting device and manufacturing method thereof
KR20110132160A (ko) 반도체 발광 소자 및 그 제조방법
CN207082541U (zh) 具有接触层的发光二极管
JP2012243972A (ja) 発光素子
KR20120032779A (ko) 고효율 발광 다이오드 및 그것을 제조하는 방법
JP2010177446A (ja) 発光素子
KR101928328B1 (ko) 반도체 발광소자
KR101154509B1 (ko) 고효율 발광 다이오드
JP2013135018A (ja) 発光素子
KR20120042331A (ko) 수평형 발광 다이오드 칩 및 이의 제조 방법
KR20120033294A (ko) 고효율 발광 다이오드 및 그것을 제조하는 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20180426

Address after: Holland Schiphol

Applicant after: LUMILEDS HOLDING B.V.

Address before: Holland Ian Deho Finn

Applicant before: Koninkl Philips Electronics NV

TA01 Transfer of patent application right
GR01 Patent grant
GR01 Patent grant