CN105097956A - 双重堆叠变容二极管 - Google Patents

双重堆叠变容二极管 Download PDF

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Publication number
CN105097956A
CN105097956A CN201510226390.9A CN201510226390A CN105097956A CN 105097956 A CN105097956 A CN 105097956A CN 201510226390 A CN201510226390 A CN 201510226390A CN 105097956 A CN105097956 A CN 105097956A
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CN
China
Prior art keywords
layer
varactor
contact
anode
contact layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510226390.9A
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English (en)
Chinese (zh)
Inventor
彼得·V·赖特
蒂莫西·S·亨德森
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Qorvo US Inc
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Triquint Semiconductor Inc
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Filing date
Publication date
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Publication of CN105097956A publication Critical patent/CN105097956A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/041—Manufacture or treatment of multilayer diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H10D84/215—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors of only varactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
CN201510226390.9A 2014-05-08 2015-05-06 双重堆叠变容二极管 Pending CN105097956A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/273,316 2014-05-08
US14/273,316 US20150325573A1 (en) 2014-05-08 2014-05-08 Dual stack varactor

Publications (1)

Publication Number Publication Date
CN105097956A true CN105097956A (zh) 2015-11-25

Family

ID=54347385

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510226390.9A Pending CN105097956A (zh) 2014-05-08 2015-05-06 双重堆叠变容二极管

Country Status (5)

Country Link
US (2) US20150325573A1 (enExample)
CN (1) CN105097956A (enExample)
DE (1) DE102015005210A1 (enExample)
FR (1) FR3020898B1 (enExample)
TW (1) TW201603291A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115133918A (zh) * 2022-04-29 2022-09-30 绍兴圆方半导体有限公司 半导体开关和系统
CN118173547A (zh) * 2024-04-10 2024-06-11 安徽长飞先进半导体有限公司 一种功率器件、功率模块、功率转换电路以及车辆
CN118335729A (zh) * 2024-04-10 2024-07-12 安徽长飞先进半导体有限公司 一种功率器件、功率模块、功率转换电路以及车辆

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* Cited by examiner, † Cited by third party
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US20150325573A1 (en) 2014-05-08 2015-11-12 Triquint Semiconductor, Inc. Dual stack varactor
US10109623B2 (en) 2014-05-08 2018-10-23 Qorvo Us, Inc. Dual-series varactor EPI
US9484471B2 (en) 2014-09-12 2016-11-01 Qorvo Us, Inc. Compound varactor
US9590669B2 (en) 2015-05-08 2017-03-07 Qorvo Us, Inc. Single varactor stack with low second-harmonic generation
DE102018213635B4 (de) 2018-08-13 2020-11-05 Infineon Technologies Ag Halbleitervorrichtung
DE102018213633B9 (de) 2018-08-13 2025-01-09 Infineon Technologies Ag Halbleitervorrichtung
US11791342B2 (en) 2021-11-17 2023-10-17 International Business Machines Corporation Varactor integrated with complementary metal-oxide semiconductor devices
US12484262B2 (en) 2021-11-17 2025-11-25 International Business Machines Corporation Tunnel field effect transistor devices

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KR20050020296A (ko) * 2003-08-21 2005-03-04 주식회사 케이이씨 바렉터 및 그 제조 방법
US20080191260A1 (en) * 2004-10-05 2008-08-14 Koninklijke Philips Electronics N.V. Semiconductor Device And Use Thereof
US20130334570A1 (en) * 2012-06-13 2013-12-19 Win Semiconductors Corp. Integrated structure of compound semiconductor devices

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CN1108817A (zh) * 1993-11-23 1995-09-20 摩托罗拉公司 变容二极管及其制作方法
KR20050020296A (ko) * 2003-08-21 2005-03-04 주식회사 케이이씨 바렉터 및 그 제조 방법
US20080191260A1 (en) * 2004-10-05 2008-08-14 Koninklijke Philips Electronics N.V. Semiconductor Device And Use Thereof
US20130334570A1 (en) * 2012-06-13 2013-12-19 Win Semiconductors Corp. Integrated structure of compound semiconductor devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115133918A (zh) * 2022-04-29 2022-09-30 绍兴圆方半导体有限公司 半导体开关和系统
CN118173547A (zh) * 2024-04-10 2024-06-11 安徽长飞先进半导体有限公司 一种功率器件、功率模块、功率转换电路以及车辆
CN118335729A (zh) * 2024-04-10 2024-07-12 安徽长飞先进半导体有限公司 一种功率器件、功率模块、功率转换电路以及车辆
CN118173547B (zh) * 2024-04-10 2024-11-05 安徽长飞先进半导体股份有限公司 一种功率器件、功率模块、功率转换电路以及车辆

Also Published As

Publication number Publication date
FR3020898B1 (fr) 2018-07-27
DE102015005210A1 (de) 2015-11-26
US10535784B2 (en) 2020-01-14
US20150325573A1 (en) 2015-11-12
US20180182903A1 (en) 2018-06-28
FR3020898A1 (enExample) 2015-11-13
TW201603291A (zh) 2016-01-16

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TA01 Transfer of patent application right

Effective date of registration: 20161212

Address after: North Carolina

Applicant after: Qorvo American company

Address before: oregon

Applicant before: Triquint Semiconductor Inc

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Application publication date: 20151125