FR2321771A1 - Procede de fabrication de diodes empilees et dispositif hyperfrequence obtenu par ledit procede - Google Patents

Procede de fabrication de diodes empilees et dispositif hyperfrequence obtenu par ledit procede

Info

Publication number
FR2321771A1
FR2321771A1 FR7525694A FR7525694A FR2321771A1 FR 2321771 A1 FR2321771 A1 FR 2321771A1 FR 7525694 A FR7525694 A FR 7525694A FR 7525694 A FR7525694 A FR 7525694A FR 2321771 A1 FR2321771 A1 FR 2321771A1
Authority
FR
France
Prior art keywords
slice
layer
layers
strongly doped
followed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7525694A
Other languages
English (en)
Other versions
FR2321771B1 (fr
Inventor
Raymond Henry
Jean Bouvet
Jacques Simon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7525694A priority Critical patent/FR2321771A1/fr
Publication of FR2321771A1 publication Critical patent/FR2321771A1/fr
Application granted granted Critical
Publication of FR2321771B1 publication Critical patent/FR2321771B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Recrystallisation Techniques (AREA)
FR7525694A 1975-08-19 1975-08-19 Procede de fabrication de diodes empilees et dispositif hyperfrequence obtenu par ledit procede Granted FR2321771A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7525694A FR2321771A1 (fr) 1975-08-19 1975-08-19 Procede de fabrication de diodes empilees et dispositif hyperfrequence obtenu par ledit procede

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7525694A FR2321771A1 (fr) 1975-08-19 1975-08-19 Procede de fabrication de diodes empilees et dispositif hyperfrequence obtenu par ledit procede

Publications (2)

Publication Number Publication Date
FR2321771A1 true FR2321771A1 (fr) 1977-03-18
FR2321771B1 FR2321771B1 (fr) 1979-04-27

Family

ID=9159188

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7525694A Granted FR2321771A1 (fr) 1975-08-19 1975-08-19 Procede de fabrication de diodes empilees et dispositif hyperfrequence obtenu par ledit procede

Country Status (1)

Country Link
FR (1) FR2321771A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0446108A1 (fr) * 1990-03-09 1991-09-11 Tekelec Airtronic Résonateur diélectrique à rubans métalliques micro-ondes et dispositif utilisant un tel résonateur
EP0634799A1 (fr) * 1993-06-09 1995-01-18 Daimler-Benz Aktiengesellschaft Diode à temps de transit
US20160247800A1 (en) * 2014-05-08 2016-08-25 Triquint Semiconductor, Inc. Dual-series varactor epi
US9882019B2 (en) 2014-09-12 2018-01-30 Qorvo Us, Inc. Compound varactor
US10535784B2 (en) 2014-05-08 2020-01-14 Qorvo Us, Inc. Dual stack varactor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3274454A (en) * 1961-09-21 1966-09-20 Mallory & Co Inc P R Semiconductor multi-stack for regulating charging of current producing cells

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3274454A (en) * 1961-09-21 1966-09-20 Mallory & Co Inc P R Semiconductor multi-stack for regulating charging of current producing cells

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0446108A1 (fr) * 1990-03-09 1991-09-11 Tekelec Airtronic Résonateur diélectrique à rubans métalliques micro-ondes et dispositif utilisant un tel résonateur
FR2659509A1 (fr) * 1990-03-09 1991-09-13 Tekelec Airtronic Sa Resonateur dielectrique a rubans metalliques micro-ondes et dispositif utilisant un tel resonateur.
US5187460A (en) * 1990-03-09 1993-02-16 Tekelec Airtronic Microstrip line resonator with a feedback circuit
EP0634799A1 (fr) * 1993-06-09 1995-01-18 Daimler-Benz Aktiengesellschaft Diode à temps de transit
US20160247800A1 (en) * 2014-05-08 2016-08-25 Triquint Semiconductor, Inc. Dual-series varactor epi
US10535784B2 (en) 2014-05-08 2020-01-14 Qorvo Us, Inc. Dual stack varactor
US10833071B2 (en) 2014-05-08 2020-11-10 Qorvo Us, Inc. Dual-series varactor EPI
US9882019B2 (en) 2014-09-12 2018-01-30 Qorvo Us, Inc. Compound varactor

Also Published As

Publication number Publication date
FR2321771B1 (fr) 1979-04-27

Similar Documents

Publication Publication Date Title
US3824133A (en) Fabrication of electrically insulating regions in optical devices by proton bombardment
US3488835A (en) Transistor fabrication method
US3579055A (en) Semiconductor laser device and method for it{3 s fabrication
US3054034A (en) Semiconductor devices and method of manufacture thereof
US3211970A (en) Semiconductor devices
KR890011026A (ko) 반도체 소자 제조방법
FR2321771A1 (fr) Procede de fabrication de diodes empilees et dispositif hyperfrequence obtenu par ledit procede
US3397450A (en) Method of forming a metal rectifying contact to semiconductor material by displacement plating
US3737380A (en) Process for contacting a semiconductor device
US3271636A (en) Gallium arsenide semiconductor diode and method
US3490140A (en) Methods for making semiconductor devices
US3442723A (en) Method of making a semiconductor junction by diffusion
JPS55115388A (en) Manufacture of semiconductor laser device
JPS54127280A (en) Semiconductor device
US3243322A (en) Temperature compensated zener diode
US3254389A (en) Method of making a ceramic supported semiconductor device
GB1126338A (en) A method of producing semiconductor bodies with an extremely low-resistance substrate
US3357872A (en) Semiconductor devices and methods for making same
US3388012A (en) Method of forming a semiconductor device by diffusing and alloying
FR2296271A1 (fr) Dispositif electroluminescent a region active confinee
US3327525A (en) Scribed and notched pn-junction transducers
US3493823A (en) Negative-resistance semiconductor device for high frequencies
ES468137A1 (es) Procedimiento para producir un contacto ohmico en un cuerpo semiconductor
JPS5763837A (en) Semiconductor device
US3354361A (en) Sandwiched construction for a tunnel diode

Legal Events

Date Code Title Description
ST Notification of lapse