FR3020898B1 - Varactor a double empilement - Google Patents

Varactor a double empilement Download PDF

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Publication number
FR3020898B1
FR3020898B1 FR1553377A FR1553377A FR3020898B1 FR 3020898 B1 FR3020898 B1 FR 3020898B1 FR 1553377 A FR1553377 A FR 1553377A FR 1553377 A FR1553377 A FR 1553377A FR 3020898 B1 FR3020898 B1 FR 3020898B1
Authority
FR
France
Prior art keywords
varactor
double stacking
stacking
double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1553377A
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English (en)
Other versions
FR3020898A1 (fr
Inventor
Peter V. Wright
Timothy S. Henderson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qorvo US Inc
Original Assignee
Triquint Semiconductor Inc
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Filing date
Publication date
Application filed by Triquint Semiconductor Inc filed Critical Triquint Semiconductor Inc
Publication of FR3020898A1 publication Critical patent/FR3020898A1/fr
Application granted granted Critical
Publication of FR3020898B1 publication Critical patent/FR3020898B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/8613Mesa PN junction diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors having potential barriers
    • H01L29/93Variable capacitance diodes, e.g. varactors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805Capacitors only
    • H01L27/0808Varactor diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003Nitride compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609Diodes
    • H01L29/66121Multilayer diodes, e.g. PNPN diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609Diodes
    • H01L29/66136PN junction diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66174Capacitors with PN or Schottky junction, e.g. varactors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/737Hetero-junction transistors
    • H01L29/7371Vertical transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR1553377A 2014-05-08 2015-04-16 Varactor a double empilement Expired - Fee Related FR3020898B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/273,316 US20150325573A1 (en) 2014-05-08 2014-05-08 Dual stack varactor
US14273316 2014-05-08

Publications (2)

Publication Number Publication Date
FR3020898A1 FR3020898A1 (fr) 2015-11-13
FR3020898B1 true FR3020898B1 (fr) 2018-07-27

Family

ID=54347385

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1553377A Expired - Fee Related FR3020898B1 (fr) 2014-05-08 2015-04-16 Varactor a double empilement

Country Status (5)

Country Link
US (2) US20150325573A1 (fr)
CN (1) CN105097956A (fr)
DE (1) DE102015005210A1 (fr)
FR (1) FR3020898B1 (fr)
TW (1) TW201603291A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150325573A1 (en) 2014-05-08 2015-11-12 Triquint Semiconductor, Inc. Dual stack varactor
US10109623B2 (en) 2014-05-08 2018-10-23 Qorvo Us, Inc. Dual-series varactor EPI
US9484471B2 (en) 2014-09-12 2016-11-01 Qorvo Us, Inc. Compound varactor
US9590669B2 (en) 2015-05-08 2017-03-07 Qorvo Us, Inc. Single varactor stack with low second-harmonic generation
DE102018213633A1 (de) 2018-08-13 2020-02-13 Infineon Technologies Ag Halbleitervorrichtung
DE102018213635B4 (de) 2018-08-13 2020-11-05 Infineon Technologies Ag Halbleitervorrichtung
US11791342B2 (en) 2021-11-17 2023-10-17 International Business Machines Corporation Varactor integrated with complementary metal-oxide semiconductor devices
US20230353092A1 (en) * 2022-04-29 2023-11-02 Shaoxing Yuanfang Semiconductor Co., Ltd. Semiconductor switches for analog signals with improved linear response

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2321771A1 (fr) 1975-08-19 1977-03-18 Thomson Csf Procede de fabrication de diodes empilees et dispositif hyperfrequence obtenu par ledit procede
US4843358A (en) 1987-05-19 1989-06-27 General Electric Company Electrically positionable short-circuits
US5055889A (en) 1989-10-31 1991-10-08 Knauf Fiber Glass, Gmbh Lateral varactor with staggered punch-through and method of fabrication
JP3299807B2 (ja) 1993-04-07 2002-07-08 シャープ株式会社 ヘテロ接合バイポーラトランジスタ
US5405790A (en) * 1993-11-23 1995-04-11 Motorola, Inc. Method of forming a semiconductor structure having MOS, bipolar, and varactor devices
US6559024B1 (en) * 2000-03-29 2003-05-06 Tyco Electronics Corporation Method of fabricating a variable capacity diode having a hyperabrupt junction profile
JP2001345328A (ja) 2000-06-02 2001-12-14 Nec Corp 半導体装置、及び、半導体集積回路
SE517440C2 (sv) 2000-06-20 2002-06-04 Ericsson Telefon Ab L M Elektriskt avstämbar anordning och ett förfarande relaterande därtill
KR100425578B1 (ko) 2001-09-17 2004-04-03 한국전자통신연구원 SiGe 이종접합 바이폴라 트랜지스터를 이용하여개선된 Q-인자 특성을 갖는 버렉터 및 그 제조 방법
WO2003028106A2 (fr) 2001-09-24 2003-04-03 Amberwave Systems Corporation Circuits r.f. comprenant des transistors a couches de materiau contraintes
JP2004241624A (ja) 2003-02-06 2004-08-26 Mitsubishi Electric Corp 電圧制御発振回路
US6727530B1 (en) 2003-03-04 2004-04-27 Xindium Technologies, Inc. Integrated photodetector and heterojunction bipolar transistors
KR100517289B1 (ko) * 2003-08-21 2005-09-28 주식회사 케이이씨 바렉터 및 그 제조 방법
JP4977313B2 (ja) 2004-01-19 2012-07-18 ルネサスエレクトロニクス株式会社 ヘテロ接合バイポーラトランジスタ
JP4857531B2 (ja) 2004-07-08 2012-01-18 三菱電機株式会社 半導体装置
JP2008516441A (ja) * 2004-10-05 2008-05-15 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体デバイス及びその使用
US7902585B2 (en) 2005-06-08 2011-03-08 Technical University Delft Linear variable voltage diode capacitor and adaptive matching networks
US20070132065A1 (en) 2005-12-08 2007-06-14 Su Jae Lee Paraelectric thin film structure for high frequency tunable device and high frequency tunable device with the same
US8022458B2 (en) 2007-10-08 2011-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitors integrated with metal gate formation
US8130051B2 (en) 2008-02-06 2012-03-06 Broadcom Corporation Method and system for varactor linearization
US7919382B2 (en) * 2008-09-09 2011-04-05 Freescale Semicondcutor, Inc. Methods for forming varactor diodes
JP4803241B2 (ja) 2008-11-27 2011-10-26 三菱電機株式会社 半導体モジュール
US9059332B2 (en) 2009-10-02 2015-06-16 Skyworks Solutions, Inc. Continuous tunable LC resonator using a FET as a varactor
US20130313683A1 (en) 2012-05-24 2013-11-28 International Business Machines Corporation Semiconductor wire-array varactor structures
TWI512905B (zh) * 2012-06-13 2015-12-11 Win Semiconductors Corp 化合物半導體元件晶圓整合結構
US8709868B2 (en) 2012-08-23 2014-04-29 Freescale Semiconductor, Inc. Sensor packages and method of packaging dies of differing sizes
US8809155B2 (en) 2012-10-04 2014-08-19 International Business Machines Corporation Back-end-of-line metal-oxide-semiconductor varactors
US8716757B1 (en) 2012-10-19 2014-05-06 Global Communication Semiconductors, Inc. Monolithic HBT with wide-tuning range varactor
KR101936036B1 (ko) 2013-02-08 2019-01-09 삼성전자 주식회사 커패시터 구조물
US9437772B2 (en) * 2013-03-15 2016-09-06 Matthew H. Kim Method of manufacture of advanced heterojunction transistor and transistor laser
US10109623B2 (en) * 2014-05-08 2018-10-23 Qorvo Us, Inc. Dual-series varactor EPI
US20160133758A1 (en) 2014-05-08 2016-05-12 Triquint Semiconductor, Inc. Dual stack varactor
US20150325573A1 (en) 2014-05-08 2015-11-12 Triquint Semiconductor, Inc. Dual stack varactor
JP6299494B2 (ja) * 2014-07-09 2018-03-28 日亜化学工業株式会社 発光装置及びその製造方法
US9484471B2 (en) 2014-09-12 2016-11-01 Qorvo Us, Inc. Compound varactor
US9590669B2 (en) 2015-05-08 2017-03-07 Qorvo Us, Inc. Single varactor stack with low second-harmonic generation

Also Published As

Publication number Publication date
US20180182903A1 (en) 2018-06-28
CN105097956A (zh) 2015-11-25
FR3020898A1 (fr) 2015-11-13
DE102015005210A1 (de) 2015-11-26
TW201603291A (zh) 2016-01-16
US10535784B2 (en) 2020-01-14
US20150325573A1 (en) 2015-11-12

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