FR3020898A1 - - Google Patents

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Publication number
FR3020898A1
FR3020898A1 FR1553377A FR1553377A FR3020898A1 FR 3020898 A1 FR3020898 A1 FR 3020898A1 FR 1553377 A FR1553377 A FR 1553377A FR 1553377 A FR1553377 A FR 1553377A FR 3020898 A1 FR3020898 A1 FR 3020898A1
Authority
FR
France
Prior art keywords
layer
varactor
contact
anode
contact layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR1553377A
Other languages
English (en)
French (fr)
Other versions
FR3020898B1 (fr
Inventor
Peter V Wright
Timothy S Henderson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qorvo US Inc
Original Assignee
Triquint Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Triquint Semiconductor Inc filed Critical Triquint Semiconductor Inc
Publication of FR3020898A1 publication Critical patent/FR3020898A1/fr
Application granted granted Critical
Publication of FR3020898B1 publication Critical patent/FR3020898B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/041—Manufacture or treatment of multilayer diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H10D84/215—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors of only varactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR1553377A 2014-05-08 2015-04-16 Varactor a double empilement Expired - Fee Related FR3020898B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/273,316 US20150325573A1 (en) 2014-05-08 2014-05-08 Dual stack varactor
US14273316 2014-05-08

Publications (2)

Publication Number Publication Date
FR3020898A1 true FR3020898A1 (enExample) 2015-11-13
FR3020898B1 FR3020898B1 (fr) 2018-07-27

Family

ID=54347385

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1553377A Expired - Fee Related FR3020898B1 (fr) 2014-05-08 2015-04-16 Varactor a double empilement

Country Status (5)

Country Link
US (2) US20150325573A1 (enExample)
CN (1) CN105097956A (enExample)
DE (1) DE102015005210A1 (enExample)
FR (1) FR3020898B1 (enExample)
TW (1) TW201603291A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150325573A1 (en) 2014-05-08 2015-11-12 Triquint Semiconductor, Inc. Dual stack varactor
US10109623B2 (en) 2014-05-08 2018-10-23 Qorvo Us, Inc. Dual-series varactor EPI
US9484471B2 (en) 2014-09-12 2016-11-01 Qorvo Us, Inc. Compound varactor
US9590669B2 (en) 2015-05-08 2017-03-07 Qorvo Us, Inc. Single varactor stack with low second-harmonic generation
DE102018213633B9 (de) * 2018-08-13 2025-01-09 Infineon Technologies Ag Halbleitervorrichtung
DE102018213635B4 (de) 2018-08-13 2020-11-05 Infineon Technologies Ag Halbleitervorrichtung
US11791342B2 (en) 2021-11-17 2023-10-17 International Business Machines Corporation Varactor integrated with complementary metal-oxide semiconductor devices
US12484262B2 (en) 2021-11-17 2025-11-25 International Business Machines Corporation Tunnel field effect transistor devices
US20230353092A1 (en) * 2022-04-29 2023-11-02 Shaoxing Yuanfang Semiconductor Co., Ltd. Semiconductor switches for analog signals with improved linear response
CN118173547B (zh) * 2024-04-10 2024-11-05 安徽长飞先进半导体股份有限公司 一种功率器件、功率模块、功率转换电路以及车辆
CN118335729A (zh) * 2024-04-10 2024-07-12 安徽长飞先进半导体有限公司 一种功率器件、功率模块、功率转换电路以及车辆

Family Cites Families (36)

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Publication number Priority date Publication date Assignee Title
FR2321771A1 (fr) 1975-08-19 1977-03-18 Thomson Csf Procede de fabrication de diodes empilees et dispositif hyperfrequence obtenu par ledit procede
US4843358A (en) 1987-05-19 1989-06-27 General Electric Company Electrically positionable short-circuits
US5055889A (en) 1989-10-31 1991-10-08 Knauf Fiber Glass, Gmbh Lateral varactor with staggered punch-through and method of fabrication
JP3299807B2 (ja) 1993-04-07 2002-07-08 シャープ株式会社 ヘテロ接合バイポーラトランジスタ
US5405790A (en) * 1993-11-23 1995-04-11 Motorola, Inc. Method of forming a semiconductor structure having MOS, bipolar, and varactor devices
US6559024B1 (en) * 2000-03-29 2003-05-06 Tyco Electronics Corporation Method of fabricating a variable capacity diode having a hyperabrupt junction profile
JP2001345328A (ja) 2000-06-02 2001-12-14 Nec Corp 半導体装置、及び、半導体集積回路
SE517440C2 (sv) 2000-06-20 2002-06-04 Ericsson Telefon Ab L M Elektriskt avstämbar anordning och ett förfarande relaterande därtill
KR100425578B1 (ko) 2001-09-17 2004-04-03 한국전자통신연구원 ＳｉＧｅ 이종접합 바이폴라 트랜지스터를 이용하여개선된 Ｑ-인자 특성을 갖는 버렉터 및 그 제조 방법
AU2002341803A1 (en) 2001-09-24 2003-04-07 Amberwave Systems Corporation Rf circuits including transistors having strained material layers
JP2004241624A (ja) 2003-02-06 2004-08-26 Mitsubishi Electric Corp 電圧制御発振回路
US6727530B1 (en) 2003-03-04 2004-04-27 Xindium Technologies, Inc. Integrated photodetector and heterojunction bipolar transistors
KR100517289B1 (ko) * 2003-08-21 2005-09-28 주식회사 케이이씨 바렉터 및 그 제조 방법
JP4977313B2 (ja) 2004-01-19 2012-07-18 ルネサスエレクトロニクス株式会社 ヘテロ接合バイポーラトランジスタ
JP4857531B2 (ja) 2004-07-08 2012-01-18 三菱電機株式会社 半導体装置
CN100555633C (zh) * 2004-10-05 2009-10-28 Nxp股份有限公司 半导体器件
JP5214443B2 (ja) 2005-06-08 2013-06-19 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 線形可変電圧ダイオードキャパシタおよび適応整合回路網
US20070132065A1 (en) 2005-12-08 2007-06-14 Su Jae Lee Paraelectric thin film structure for high frequency tunable device and high frequency tunable device with the same
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US20160133758A1 (en) 2014-05-08 2016-05-12 Triquint Semiconductor, Inc. Dual stack varactor
US10109623B2 (en) 2014-05-08 2018-10-23 Qorvo Us, Inc. Dual-series varactor EPI
US20150325573A1 (en) 2014-05-08 2015-11-12 Triquint Semiconductor, Inc. Dual stack varactor
JP6299494B2 (ja) * 2014-07-09 2018-03-28 日亜化学工業株式会社 発光装置及びその製造方法
US9484471B2 (en) 2014-09-12 2016-11-01 Qorvo Us, Inc. Compound varactor
US9590669B2 (en) 2015-05-08 2017-03-07 Qorvo Us, Inc. Single varactor stack with low second-harmonic generation

Also Published As

Publication number Publication date
US20180182903A1 (en) 2018-06-28
TW201603291A (zh) 2016-01-16
CN105097956A (zh) 2015-11-25
FR3020898B1 (fr) 2018-07-27
DE102015005210A1 (de) 2015-11-26
US20150325573A1 (en) 2015-11-12
US10535784B2 (en) 2020-01-14

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