CN105047204B - 形成近场换能器(nft)的多个部分的方法以及由此形成的物品 - Google Patents
形成近场换能器(nft)的多个部分的方法以及由此形成的物品 Download PDFInfo
- Publication number
- CN105047204B CN105047204B CN201510203598.9A CN201510203598A CN105047204B CN 105047204 B CN105047204 B CN 105047204B CN 201510203598 A CN201510203598 A CN 201510203598A CN 105047204 B CN105047204 B CN 105047204B
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- metal
- containing layer
- nft
- layer
- subjected
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- 238000000034 method Methods 0.000 title claims abstract description 93
- 229910052751 metal Inorganic materials 0.000 claims abstract description 219
- 239000002184 metal Substances 0.000 claims abstract description 219
- 239000000463 material Substances 0.000 claims abstract description 118
- 238000009792 diffusion process Methods 0.000 claims description 29
- 229910052804 chromium Inorganic materials 0.000 claims description 19
- 238000000137 annealing Methods 0.000 claims description 17
- 238000001020 plasma etching Methods 0.000 claims description 14
- 238000005224 laser annealing Methods 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 238000000227 grinding Methods 0.000 claims description 7
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052727 yttrium Inorganic materials 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 230000000717 retained effect Effects 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 382
- 239000011651 chromium Substances 0.000 description 32
- 230000003647 oxidation Effects 0.000 description 30
- 238000007254 oxidation reaction Methods 0.000 description 30
- 238000013507 mapping Methods 0.000 description 19
- 239000010931 gold Substances 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 229910052737 gold Inorganic materials 0.000 description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 239000011135 tin Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052681 coesite Inorganic materials 0.000 description 8
- 229910052906 cristobalite Inorganic materials 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 229910052682 stishovite Inorganic materials 0.000 description 8
- 229910052905 tridymite Inorganic materials 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 239000011572 manganese Substances 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011133 lead Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000000541 cathodic arc deposition Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- -1 for example Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910019912 CrN Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910008322 ZrN Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
- G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/3116—Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
- G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
- G11B5/314—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure where the layers are extra layers normally not provided in the transducing structure, e.g. optical layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B2005/0002—Special dispositions or recording techniques
- G11B2005/0005—Arrangements, methods or circuits
- G11B2005/0021—Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Magnetic Heads (AREA)
- Recording Or Reproducing By Magnetic Means (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/266,920 | 2014-05-01 | ||
| US14/266,920 US9305572B2 (en) | 2014-05-01 | 2014-05-01 | Methods of forming portions of near field transducers (NFTS) and articles formed thereby |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105047204A CN105047204A (zh) | 2015-11-11 |
| CN105047204B true CN105047204B (zh) | 2018-06-12 |
Family
ID=54355686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510203598.9A Active CN105047204B (zh) | 2014-05-01 | 2015-04-24 | 形成近场换能器(nft)的多个部分的方法以及由此形成的物品 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US9305572B2 (enExample) |
| JP (1) | JP2015212994A (enExample) |
| KR (1) | KR101789600B1 (enExample) |
| CN (1) | CN105047204B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6038843B2 (ja) * | 2013-06-24 | 2016-12-07 | シーゲイト テクノロジー エルエルシーＳｅａｇａｔｅ Ｔｅｃｈｎｏｌｏｇｙ ＬＬＣ | 少なくとも１つの相互混合層を含む装置 |
| US9548076B2 (en) | 2013-11-08 | 2017-01-17 | Seagate Technology Llc | Magnetic devices with overcoats |
| US9552833B2 (en) * | 2014-11-11 | 2017-01-24 | Seagate Technology Llc | Devices including a multilayer gas barrier layer |
| US9620150B2 (en) * | 2014-11-11 | 2017-04-11 | Seagate Technology Llc | Devices including an amorphous gas barrier layer |
| US9741381B1 (en) * | 2015-05-28 | 2017-08-22 | Seagate Technology Llc | Near field transducers (NFTs) including a protective layer and methods of forming |
| US10971176B2 (en) | 2019-02-21 | 2021-04-06 | International Business Machines Corporation | Tunnel magnetoresistive sensor with adjacent gap having chromium alloy seed layer and refractory material layer |
| US11377736B2 (en) | 2019-03-08 | 2022-07-05 | Seagate Technology Llc | Atomic layer deposition systems, methods, and devices |
| US10643641B1 (en) * | 2019-03-29 | 2020-05-05 | Western Digital Technologies, Inc. | Methods and apparatuses for localized annealing of sliders configured for heat assisted magnetic recording |
| US10910007B1 (en) * | 2020-02-14 | 2021-02-02 | Western Digital Technologies, Inc. | Heat-assisted magnetic recording device capable of providing negative electrical potential at NFT |
| US11798581B1 (en) | 2021-04-02 | 2023-10-24 | Seagate Technology Llc | Heat-assisted magnetic recording head with nanoparticles |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013163470A1 (en) * | 2012-04-25 | 2013-10-31 | Seagate Technology Llc | Devices including near field transducer and adhesion layer |
| CN103514898A (zh) * | 2012-06-29 | 2014-01-15 | 希捷科技有限公司 | 包括nft和包覆层的装置的间层 |
| WO2014062222A1 (en) * | 2012-10-18 | 2014-04-24 | Seagate Technology Llc | Articles including intermediate layer and methods of forming |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4492873A (en) | 1980-04-25 | 1985-01-08 | Dmitriev Stanislav P | Apparatus for electron beam irradiation of objects |
| US4898774A (en) | 1986-04-03 | 1990-02-06 | Komag, Inc. | Corrosion and wear resistant magnetic disk |
| US5482611A (en) | 1991-09-30 | 1996-01-09 | Helmer; John C. | Physical vapor deposition employing ion extraction from a plasma |
| DE4200235C1 (enExample) | 1992-01-08 | 1993-05-06 | Hoffmeister, Helmut, Dr., 4400 Muenster, De | |
| JP3407548B2 (ja) | 1996-03-29 | 2003-05-19 | 株式会社日立製作所 | イオン打込み装置及びこれを用いた半導体製造方法 |
| AU3293097A (en) | 1996-05-31 | 1998-01-05 | Akashic Memories Corporation | Recording media having protective overcoats of highly tetrahedral amorphous carbon and methods for their production |
| US6312766B1 (en) | 1998-03-12 | 2001-11-06 | Agere Systems Guardian Corp. | Article comprising fluorinated diamond-like carbon and method for fabricating article |
| US6130436A (en) | 1998-06-02 | 2000-10-10 | Varian Semiconductor Equipment Associates, Inc. | Acceleration and analysis architecture for ion implanter |
| EP1069809A1 (en) | 1999-07-13 | 2001-01-17 | Ion Beam Applications S.A. | Isochronous cyclotron and method of extraction of charged particles from such cyclotron |
| US6632483B1 (en) | 2000-06-30 | 2003-10-14 | International Business Machines Corporation | Ion gun deposition and alignment for liquid-crystal applications |
| US6589676B1 (en) | 2000-07-25 | 2003-07-08 | Seagate Technology Llc | Corrosion resistant magnetic thin film media |
| US6641932B1 (en) | 2000-09-05 | 2003-11-04 | Seagate Technology, Llc | Magnetic thin film media with chromium capping layer |
| JP4184668B2 (ja) | 2002-01-10 | 2008-11-19 | 富士通株式会社 | Ｃｐｐ構造磁気抵抗効果素子 |
| ES2346355T3 (es) | 2006-12-28 | 2010-10-14 | Fondazione Per Adroterapia Oncologica - Tera | Sistema de aceleracion ionica para aplicaciones medicas y/u otras aplicaciones. |
| US7544958B2 (en) | 2007-03-23 | 2009-06-09 | Varian Semiconductor Equipment Associates, Inc. | Contamination reduction during ion implantation |
| US20100190036A1 (en) | 2009-01-27 | 2010-07-29 | Kyriakos Komvopoulos | Systems and Methods for Surface Modification by Filtered Cathodic Vacuum Arc |
| DE102009032275A1 (de) | 2009-07-08 | 2011-01-13 | Siemens Aktiengesellschaft | Beschleunigeranlage und Verfahren zur Einstellung einer Partikelenergie |
| US7998607B2 (en) | 2009-07-31 | 2011-08-16 | Hitachi Global Storage Technologies Netherlands, B.V. | Partially-oxidized cap layer for hard disk drive magnetic media |
| US8351151B2 (en) | 2010-11-02 | 2013-01-08 | Hitachi Global Storage Technologies Netherlands B.V. | Thermally assisted magnetic write head employing a near field transducer (NFT) having a diffusion barrier layer between the near field transducer and a magnetic lip |
| US20130161505A1 (en) | 2011-04-07 | 2013-06-27 | Seagate Technology Llc | Methods of forming layers |
| EP2568305B1 (en) | 2011-09-09 | 2016-03-02 | Crocus Technology S.A. | Magnetic tunnel junction with an improved tunnel barrier |
| US9880232B2 (en) | 2012-03-14 | 2018-01-30 | Seagate Technology Llc | Magnetic sensor manufacturing |
| US8514673B1 (en) | 2012-04-24 | 2013-08-20 | Seagate Technology Llc | Layered near-field transducer |
| US8902719B2 (en) * | 2012-04-25 | 2014-12-02 | Seagate Technology Llc | Heat assisted magnetic recording heads having bilayer heat sinks |
| US9047908B2 (en) * | 2013-04-23 | 2015-06-02 | HGST Netherlands B.V. | Heat-assisted magnetic recording (HAMR) head with diffusion barrier between waveguide core and write pole lip |
| US8971161B2 (en) | 2013-06-24 | 2015-03-03 | Seagate Technology Llc | Devices including at least one adhesion layer and methods of forming adhesion layers |
| US9281002B2 (en) * | 2013-06-24 | 2016-03-08 | Seagate Technology Llc | Materials for near field transducers and near field transducers containing same |
| JP2015056653A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 記憶装置 |
| US9099111B2 (en) * | 2013-12-18 | 2015-08-04 | HGST Netherlands B.V. | Heat assisted magnetic recording head employing noble metal alloy as diffusion barrier layer |
-
2014
- 2014-05-01 US US14/266,920 patent/US9305572B2/en active Active
-
2015
- 2015-04-24 CN CN201510203598.9A patent/CN105047204B/zh active Active
- 2015-04-30 KR KR1020150061523A patent/KR101789600B1/ko not_active Expired - Fee Related
- 2015-04-30 JP JP2015092990A patent/JP2015212994A/ja active Pending
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2016
- 2016-04-04 US US15/089,939 patent/US9842613B2/en active Active
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2017
- 2017-12-11 US US15/837,423 patent/US10424324B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013163470A1 (en) * | 2012-04-25 | 2013-10-31 | Seagate Technology Llc | Devices including near field transducer and adhesion layer |
| CN103514898A (zh) * | 2012-06-29 | 2014-01-15 | 希捷科技有限公司 | 包括nft和包覆层的装置的间层 |
| WO2014062222A1 (en) * | 2012-10-18 | 2014-04-24 | Seagate Technology Llc | Articles including intermediate layer and methods of forming |
Also Published As
| Publication number | Publication date |
|---|---|
| US9305572B2 (en) | 2016-04-05 |
| US9842613B2 (en) | 2017-12-12 |
| CN105047204A (zh) | 2015-11-11 |
| US10424324B2 (en) | 2019-09-24 |
| US20160217812A1 (en) | 2016-07-28 |
| US20150318003A1 (en) | 2015-11-05 |
| KR101789600B1 (ko) | 2017-10-25 |
| US20180102137A1 (en) | 2018-04-12 |
| JP2015212994A (ja) | 2015-11-26 |
| KR20150126303A (ko) | 2015-11-11 |
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