JP2015212994A - 近接場トランスデューサ（ｎｆｔ）の一部を形成する方法およびそれによって形成された物品 - Google Patents

近接場トランスデューサ（ｎｆｔ）の一部を形成する方法およびそれによって形成された物品 Download PDF

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Publication number
JP2015212994A
JP2015212994A JP2015092990A JP2015092990A JP2015212994A JP 2015212994 A JP2015212994 A JP 2015212994A JP 2015092990 A JP2015092990 A JP 2015092990A JP 2015092990 A JP2015092990 A JP 2015092990A JP 2015212994 A JP2015212994 A JP 2015212994A
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JP
Japan
Prior art keywords
metal
containing layer
nft
layer
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015092990A
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English (en)
Japanese (ja)
Other versions
JP2015212994A5 (enExample
Inventor
ユーハン・チェン
Yuhang Cheng
サミ・アントラジ
Antrazi Sami
マイケル・セイグラー
Siegler Michael
スコット・フランゼン
Franzen Scott
フィリップ・ジィ・ピッチャー
G Pitcher Philip
エドワード・エフ・レジダ
F Rejda Edward
クルト・ダブリュ・ウィアマン
W Wierman Kurt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
Original Assignee
Seagate Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of JP2015212994A publication Critical patent/JP2015212994A/ja
Publication of JP2015212994A5 publication Critical patent/JP2015212994A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G11B5/313—Disposition of layers
    • G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G11B5/3116—Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G11B5/313—Disposition of layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G11B5/313—Disposition of layers
    • G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
    • G11B5/314—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure where the layers are extra layers normally not provided in the transducing structure, e.g. optical layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G11B2005/0005—Arrangements, methods or circuits
    • G11B2005/0021—Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Heads (AREA)
  • Recording Or Reproducing By Magnetic Means (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2015092990A 2014-05-01 2015-04-30 近接場トランスデューサ（ｎｆｔ）の一部を形成する方法およびそれによって形成された物品 Pending JP2015212994A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/266,920 US9305572B2 (en) 2014-05-01 2014-05-01 Methods of forming portions of near field transducers (NFTS) and articles formed thereby
US14/266,920 2014-05-01

Publications (2)

Publication Number Publication Date
JP2015212994A true JP2015212994A (ja) 2015-11-26
JP2015212994A5 JP2015212994A5 (enExample) 2018-06-14

Family

ID=54355686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015092990A Pending JP2015212994A (ja) 2014-05-01 2015-04-30 近接場トランスデューサ（ｎｆｔ）の一部を形成する方法およびそれによって形成された物品

Country Status (4)

Country Link
US (3) US9305572B2 (enExample)
JP (1) JP2015212994A (enExample)
KR (1) KR101789600B1 (enExample)
CN (1) CN105047204B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8976634B2 (en) * 2013-06-24 2015-03-10 Seagate Technology Llc Devices including at least one intermixing layer
US9548076B2 (en) 2013-11-08 2017-01-17 Seagate Technology Llc Magnetic devices with overcoats
US9620150B2 (en) * 2014-11-11 2017-04-11 Seagate Technology Llc Devices including an amorphous gas barrier layer
US9552833B2 (en) * 2014-11-11 2017-01-24 Seagate Technology Llc Devices including a multilayer gas barrier layer
US9741381B1 (en) 2015-05-28 2017-08-22 Seagate Technology Llc Near field transducers (NFTs) including a protective layer and methods of forming
US10971176B2 (en) 2019-02-21 2021-04-06 International Business Machines Corporation Tunnel magnetoresistive sensor with adjacent gap having chromium alloy seed layer and refractory material layer
US11377736B2 (en) 2019-03-08 2022-07-05 Seagate Technology Llc Atomic layer deposition systems, methods, and devices
US10643641B1 (en) * 2019-03-29 2020-05-05 Western Digital Technologies, Inc. Methods and apparatuses for localized annealing of sliders configured for heat assisted magnetic recording
US10910007B1 (en) * 2020-02-14 2021-02-02 Western Digital Technologies, Inc. Heat-assisted magnetic recording device capable of providing negative electrical potential at NFT
US11798581B1 (en) 2021-04-02 2023-10-24 Seagate Technology Llc Heat-assisted magnetic recording head with nanoparticles

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099206A (ja) * 2010-11-02 2012-05-24 Hitachi Global Storage Technologies Netherlands Bv 近接場トランスデューサと磁性リップの間に拡散障壁層を有する近接場トランスデューサ（ｎｆｔ）を用いる熱アシスト磁気書き込みヘッド
US20130286804A1 (en) * 2012-04-25 2013-10-31 Seagate Technology Llc Heat assisted magnetic recording heads having bilayer heat sinks
JP2013229093A (ja) * 2012-04-24 2013-11-07 Seagate Technology Llc 近接場トランスデューサ、その形成方法、および近接場トランスデューサを含むシステム
US20140313872A1 (en) * 2013-04-23 2014-10-23 HGST Netherlands B.V. Heat-assisted magnetic recording (hamr) head with diffusion barrier between waveguide core and write pole lip
JP2015008031A (ja) * 2013-06-24 2015-01-15 シーゲイト テクノロジー エルエルシー 少なくとも１つの接着層を含む装置および接着層を形成する方法
US20150170683A1 (en) * 2013-12-18 2015-06-18 HGST Netherlands B.V. Heat assisted magnetic recording head employing noble metal alloy as diffusion barrier layer

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1981003104A1 (fr) 1980-04-25 1981-10-29 A Ivanov Dispositif d'irradiation d'objets a l'aide de rayons cathodiques
US4898774A (en) 1986-04-03 1990-02-06 Komag, Inc. Corrosion and wear resistant magnetic disk
US5482611A (en) 1991-09-30 1996-01-09 Helmer; John C. Physical vapor deposition employing ion extraction from a plasma
DE4200235C1 (enExample) 1992-01-08 1993-05-06 Hoffmeister, Helmut, Dr., 4400 Muenster, De
JP3407548B2 (ja) 1996-03-29 2003-05-19 株式会社日立製作所 イオン打込み装置及びこれを用いた半導体製造方法
WO1997045834A1 (en) 1996-05-31 1997-12-04 Akashic Memories Corporation Recording media having protective overcoats of highly tetrahedral amorphous carbon and methods for their production
US6312766B1 (en) 1998-03-12 2001-11-06 Agere Systems Guardian Corp. Article comprising fluorinated diamond-like carbon and method for fabricating article
US6130436A (en) 1998-06-02 2000-10-10 Varian Semiconductor Equipment Associates, Inc. Acceleration and analysis architecture for ion implanter
EP1069809A1 (en) 1999-07-13 2001-01-17 Ion Beam Applications S.A. Isochronous cyclotron and method of extraction of charged particles from such cyclotron
US6632483B1 (en) 2000-06-30 2003-10-14 International Business Machines Corporation Ion gun deposition and alignment for liquid-crystal applications
US6589676B1 (en) 2000-07-25 2003-07-08 Seagate Technology Llc Corrosion resistant magnetic thin film media
US6641932B1 (en) 2000-09-05 2003-11-04 Seagate Technology, Llc Magnetic thin film media with chromium capping layer
JP4184668B2 (ja) 2002-01-10 2008-11-19 富士通株式会社 Ｃｐｐ構造磁気抵抗効果素子
PL2106678T3 (pl) 2006-12-28 2010-11-30 Fond Per Adroterapia Oncologica Tera System przyspieszania jonów do zastosowań medycznych i/lub innych
US7544958B2 (en) 2007-03-23 2009-06-09 Varian Semiconductor Equipment Associates, Inc. Contamination reduction during ion implantation
US20100190036A1 (en) 2009-01-27 2010-07-29 Kyriakos Komvopoulos Systems and Methods for Surface Modification by Filtered Cathodic Vacuum Arc
DE102009032275A1 (de) 2009-07-08 2011-01-13 Siemens Aktiengesellschaft Beschleunigeranlage und Verfahren zur Einstellung einer Partikelenergie
US7998607B2 (en) 2009-07-31 2011-08-16 Hitachi Global Storage Technologies Netherlands, B.V. Partially-oxidized cap layer for hard disk drive magnetic media
US20130164454A1 (en) 2011-04-07 2013-06-27 Seagate Technology Llc Methods of forming layers
EP2568305B1 (en) 2011-09-09 2016-03-02 Crocus Technology S.A. Magnetic tunnel junction with an improved tunnel barrier
US9880232B2 (en) 2012-03-14 2018-01-30 Seagate Technology Llc Magnetic sensor manufacturing
CN104769672B (zh) * 2012-04-25 2019-05-14 希捷科技有限公司 包括近场换能器和粘合层的器件
US8945731B2 (en) 2012-06-29 2015-02-03 Seagate Technology Llc Interlayer for device including NFT and cladding layers
JP6239632B2 (ja) * 2012-10-18 2017-11-29 シーゲイト テクノロジー エルエルシーＳｅａｇａｔｅ Ｔｅｃｈｎｏｌｏｇｙ ＬＬＣ 中間層を含む物品および形成する方法
US9286931B2 (en) * 2013-06-24 2016-03-15 Seagate Technology Llc Materials for near field transducers and near field transducers containing same
JP2015056653A (ja) * 2013-09-13 2015-03-23 株式会社東芝 記憶装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099206A (ja) * 2010-11-02 2012-05-24 Hitachi Global Storage Technologies Netherlands Bv 近接場トランスデューサと磁性リップの間に拡散障壁層を有する近接場トランスデューサ（ｎｆｔ）を用いる熱アシスト磁気書き込みヘッド
JP2013229093A (ja) * 2012-04-24 2013-11-07 Seagate Technology Llc 近接場トランスデューサ、その形成方法、および近接場トランスデューサを含むシステム
US20130286804A1 (en) * 2012-04-25 2013-10-31 Seagate Technology Llc Heat assisted magnetic recording heads having bilayer heat sinks
US20140313872A1 (en) * 2013-04-23 2014-10-23 HGST Netherlands B.V. Heat-assisted magnetic recording (hamr) head with diffusion barrier between waveguide core and write pole lip
JP2015008031A (ja) * 2013-06-24 2015-01-15 シーゲイト テクノロジー エルエルシー 少なくとも１つの接着層を含む装置および接着層を形成する方法
US20150170683A1 (en) * 2013-12-18 2015-06-18 HGST Netherlands B.V. Heat assisted magnetic recording head employing noble metal alloy as diffusion barrier layer

Also Published As

Publication number Publication date
CN105047204A (zh) 2015-11-11
US10424324B2 (en) 2019-09-24
KR20150126303A (ko) 2015-11-11
US9842613B2 (en) 2017-12-12
KR101789600B1 (ko) 2017-10-25
US20180102137A1 (en) 2018-04-12
CN105047204B (zh) 2018-06-12
US20160217812A1 (en) 2016-07-28
US9305572B2 (en) 2016-04-05
US20150318003A1 (en) 2015-11-05

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