CN105027202B - 包含TiN‑X中间层的磁堆 - Google Patents

包含TiN‑X中间层的磁堆 Download PDF

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Publication number
CN105027202B
CN105027202B CN201380060675.9A CN201380060675A CN105027202B CN 105027202 B CN105027202 B CN 105027202B CN 201380060675 A CN201380060675 A CN 201380060675A CN 105027202 B CN105027202 B CN 105027202B
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CN
China
Prior art keywords
tin
fept
magnetic
heap
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201380060675.9A
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English (en)
Chinese (zh)
Other versions
CN105027202A (zh
Inventor
李慧慧
G·具
彭应国
J·陈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National University of Singapore
Seagate Technology LLC
Original Assignee
National University of Singapore
Seagate Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National University of Singapore, Seagate Technology LLC filed Critical National University of Singapore
Publication of CN105027202A publication Critical patent/CN105027202A/zh
Application granted granted Critical
Publication of CN105027202B publication Critical patent/CN105027202B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/657—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing inorganic, non-oxide compound of Si, N, P, B, H or C, e.g. in metal alloy or compound
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
    • G11B5/667—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
    • G11B5/7369—Two or more non-magnetic underlayers, e.g. seed layers or barrier layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Magnetic Record Carriers (AREA)
CN201380060675.9A 2012-09-27 2013-09-24 包含TiN‑X中间层的磁堆 Expired - Fee Related CN105027202B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201261706314P 2012-09-27 2012-09-27
US201261706317P 2012-09-27 2012-09-27
US61/706,314 2012-09-27
US61/706,317 2012-09-27
US201261733202P 2012-12-04 2012-12-04
US61/733,202 2012-12-04
PCT/US2013/061505 WO2014052344A1 (en) 2012-09-27 2013-09-24 Magnetic stack including tin-x intermediate layer

Publications (2)

Publication Number Publication Date
CN105027202A CN105027202A (zh) 2015-11-04
CN105027202B true CN105027202B (zh) 2018-04-13

Family

ID=49305198

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380060675.9A Expired - Fee Related CN105027202B (zh) 2012-09-27 2013-09-24 包含TiN‑X中间层的磁堆

Country Status (6)

Country Link
US (1) US9368142B2 (enExample)
JP (1) JP6185591B2 (enExample)
CN (1) CN105027202B (enExample)
MY (1) MY178275A (enExample)
SG (1) SG11201502412YA (enExample)
WO (1) WO2014052344A1 (enExample)

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SG11201502573SA (en) * 2012-10-10 2015-05-28 Fuji Electric Co Ltd Magnetic recording medium
US9472228B2 (en) * 2013-05-28 2016-10-18 HGST Netherlands B.V. Perpendicular magnetic recording media having novel magnetic under-layer structure
JP6145332B2 (ja) * 2013-06-20 2017-06-07 昭和電工株式会社 磁気記録媒体、磁気記憶装置
US9672854B2 (en) * 2013-09-30 2017-06-06 Seagate Technology Llc Magnetic stack including MgO-Ti(ON) interlayer
US9177585B1 (en) * 2013-10-23 2015-11-03 WD Media, LLC Magnetic media capable of improving magnetic properties and thermal management for heat-assisted magnetic recording
US9689065B2 (en) * 2014-01-03 2017-06-27 Seagate Technology Llc Magnetic stack including crystallized segregant induced columnar magnetic recording layer
US9822441B2 (en) 2015-03-31 2017-11-21 WD Media, LLC Iridium underlayer for heat assisted magnetic recording media
US10347281B2 (en) 2015-06-02 2019-07-09 Western Digital Technologies, Inc. Structures and methods for templated growth of high areal density heat assisted magnetic recording media
US10276201B1 (en) 2015-11-02 2019-04-30 WD Media, LLC Dual phase MgO-X seed layers for heat assisted magnetic recording media
US9406329B1 (en) * 2015-11-30 2016-08-02 WD Media, LLC HAMR media structure with intermediate layer underlying a magnetic recording layer having multiple sublayers
JP6832189B2 (ja) * 2017-02-21 2021-02-24 昭和電工株式会社 磁気記録媒体及び磁気記録再生装置
SG10202101868SA (en) * 2017-03-10 2021-03-30 Fuji Electric Co Ltd Magnetic recording medium
US10276202B1 (en) * 2018-04-23 2019-04-30 Western Digital Technologies, Inc. Heat-assisted magnetic recording (HAMR) medium with rhodium or rhodium-based alloy heat-sink layer
TWI659118B (zh) * 2018-06-06 2019-05-11 國立中興大學 Solar absorption device
JP7244721B2 (ja) * 2019-04-09 2023-03-23 株式会社レゾナック 磁気記録媒体および磁気記憶装置
US11521648B2 (en) 2020-11-04 2022-12-06 Western Digital Technologies, Inc. Heat-assisted magnetic recording (HAMR) medium with multilayered underlayer for the recording layer
US11763845B2 (en) * 2021-12-08 2023-09-19 Seagate Technology Llc Magnetic stack including non-magnetic seed layer for hard disk drive media
US20230238023A1 (en) * 2022-01-27 2023-07-27 Western Digital Technologies, Inc. Heat-assisted magnetic recording (hamr) media with dual-layer media carbon overcoat
US11900978B1 (en) * 2022-08-11 2024-02-13 Western Digital Technologies, Inc. Magnetic recording medium with underlayer configured to reduce diffusion of titanium into a magnetic recording layer
US12272392B2 (en) 2022-08-25 2025-04-08 Western Digital Technologies, Inc. Media structure with selected segregants configured to improve heat-assisted magnetic recording
US12412598B2 (en) 2023-09-01 2025-09-09 Western Digital Technologies, Inc. Media underlayer structure for heat-assisted magnetic recording and media fabrication methods therefor
US12308056B2 (en) 2023-10-12 2025-05-20 Western Digital Technologies, Inc. Magnetic recording medium with magnesium-titanium oxide (MTO) layer formed using pulsed direct current sputter deposition

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Also Published As

Publication number Publication date
US9368142B2 (en) 2016-06-14
MY178275A (en) 2020-10-07
JP6185591B2 (ja) 2017-08-23
WO2014052344A1 (en) 2014-04-03
US20140093748A1 (en) 2014-04-03
CN105027202A (zh) 2015-11-04
JP2015530691A (ja) 2015-10-15
SG11201502412YA (en) 2015-05-28

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