JP6185591B2 - ＴｉＮ−Ｘ中間層を含む磁気スタック - Google Patents
ＴｉＮ−Ｘ中間層を含む磁気スタック Download PDFInfo
- Publication number
- JP6185591B2 JP6185591B2 JP2015534606A JP2015534606A JP6185591B2 JP 6185591 B2 JP6185591 B2 JP 6185591B2 JP 2015534606 A JP2015534606 A JP 2015534606A JP 2015534606 A JP2015534606 A JP 2015534606A JP 6185591 B2 JP6185591 B2 JP 6185591B2
- Authority
- JP
- Japan
- Prior art keywords
- tin
- layer
- fept
- stack
- zro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000011229 interlayer Substances 0.000 title description 95
- 229910005335 FePt Inorganic materials 0.000 claims description 239
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 161
- 239000002245 particle Substances 0.000 claims description 144
- 239000000758 substrate Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 25
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 18
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 239000006148 magnetic separator Substances 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 229910015187 FePd Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 238
- 229910052718 tin Inorganic materials 0.000 description 151
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 113
- 239000010408 film Substances 0.000 description 102
- KELHQGOVULCJSG-UHFFFAOYSA-N n,n-dimethyl-1-(5-methylfuran-2-yl)ethane-1,2-diamine Chemical compound CN(C)C(CN)C1=CC=C(C)O1 KELHQGOVULCJSG-UHFFFAOYSA-N 0.000 description 89
- 229910010282 TiON Inorganic materials 0.000 description 83
- 238000003917 TEM image Methods 0.000 description 32
- 238000002441 X-ray diffraction Methods 0.000 description 22
- 238000009826 distribution Methods 0.000 description 21
- 230000007423 decrease Effects 0.000 description 19
- 230000003247 decreasing effect Effects 0.000 description 16
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 238000001228 spectrum Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 238000001878 scanning electron micrograph Methods 0.000 description 11
- 238000010951 particle size reduction Methods 0.000 description 10
- 239000006104 solid solution Substances 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 9
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 8
- 239000000523 sample Substances 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 238000004627 transmission electron microscopy Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 230000009919 sequestration Effects 0.000 description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000009736 wetting Methods 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000006249 magnetic particle Substances 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 238000005191 phase separation Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- -1 X is Chemical compound 0.000 description 2
- 229910006252 ZrON Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 238000004445 quantitative analysis Methods 0.000 description 2
- 239000013074 reference sample Substances 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005549 size reduction Methods 0.000 description 2
- 239000012798 spherical particle Substances 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- NQTSTBMCCAVWOS-UHFFFAOYSA-N 1-dimethoxyphosphoryl-3-phenoxypropan-2-one Chemical compound COP(=O)(OC)CC(=O)COC1=CC=CC=C1 NQTSTBMCCAVWOS-UHFFFAOYSA-N 0.000 description 1
- 229910021296 Co3Pt Inorganic materials 0.000 description 1
- ZSBXGIUJOOQZMP-JLNYLFASSA-N Matrine Chemical compound C1CC[C@H]2CN3C(=O)CCC[C@@H]3[C@@H]3[C@H]2N1CCC3 ZSBXGIUJOOQZMP-JLNYLFASSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910011210 Ti—O—N Inorganic materials 0.000 description 1
- 229910008322 ZrN Inorganic materials 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000013169 thromboelastometry Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000000101 transmission high energy electron diffraction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/657—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing inorganic, non-oxide compound of Si, N, P, B, H or C, e.g. in metal alloy or compound
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/667—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7369—Two or more non-magnetic underlayers, e.g. seed layers or barrier layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Magnetic Record Carriers (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261706314P | 2012-09-27 | 2012-09-27 | |
| US201261706317P | 2012-09-27 | 2012-09-27 | |
| US61/706,314 | 2012-09-27 | ||
| US61/706,317 | 2012-09-27 | ||
| US201261733202P | 2012-12-04 | 2012-12-04 | |
| US61/733,202 | 2012-12-04 | ||
| PCT/US2013/061505 WO2014052344A1 (en) | 2012-09-27 | 2013-09-24 | Magnetic stack including tin-x intermediate layer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015530691A JP2015530691A (ja) | 2015-10-15 |
| JP2015530691A5 JP2015530691A5 (enExample) | 2016-08-18 |
| JP6185591B2 true JP6185591B2 (ja) | 2017-08-23 |
Family
ID=49305198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015534606A Active JP6185591B2 (ja) | 2012-09-27 | 2013-09-24 | ＴｉＮ−Ｘ中間層を含む磁気スタック |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9368142B2 (enExample) |
| JP (1) | JP6185591B2 (enExample) |
| CN (1) | CN105027202B (enExample) |
| MY (1) | MY178275A (enExample) |
| SG (1) | SG11201502412YA (enExample) |
| WO (1) | WO2014052344A1 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11900978B1 (en) | 2022-08-11 | 2024-02-13 | Western Digital Technologies, Inc. | Magnetic recording medium with underlayer configured to reduce diffusion of titanium into a magnetic recording layer |
| US12272392B2 (en) | 2022-08-25 | 2025-04-08 | Western Digital Technologies, Inc. | Media structure with selected segregants configured to improve heat-assisted magnetic recording |
| US12308056B2 (en) | 2023-10-12 | 2025-05-20 | Western Digital Technologies, Inc. | Magnetic recording medium with magnesium-titanium oxide (MTO) layer formed using pulsed direct current sputter deposition |
| US12412598B2 (en) | 2023-09-01 | 2025-09-09 | Western Digital Technologies, Inc. | Media underlayer structure for heat-assisted magnetic recording and media fabrication methods therefor |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG11201502573SA (en) * | 2012-10-10 | 2015-05-28 | Fuji Electric Co Ltd | Magnetic recording medium |
| US9472228B2 (en) * | 2013-05-28 | 2016-10-18 | HGST Netherlands B.V. | Perpendicular magnetic recording media having novel magnetic under-layer structure |
| JP6145332B2 (ja) * | 2013-06-20 | 2017-06-07 | 昭和電工株式会社 | 磁気記録媒体、磁気記憶装置 |
| US9672854B2 (en) * | 2013-09-30 | 2017-06-06 | Seagate Technology Llc | Magnetic stack including MgO-Ti(ON) interlayer |
| US9177585B1 (en) * | 2013-10-23 | 2015-11-03 | WD Media, LLC | Magnetic media capable of improving magnetic properties and thermal management for heat-assisted magnetic recording |
| US9689065B2 (en) * | 2014-01-03 | 2017-06-27 | Seagate Technology Llc | Magnetic stack including crystallized segregant induced columnar magnetic recording layer |
| US9822441B2 (en) | 2015-03-31 | 2017-11-21 | WD Media, LLC | Iridium underlayer for heat assisted magnetic recording media |
| US10347281B2 (en) | 2015-06-02 | 2019-07-09 | Western Digital Technologies, Inc. | Structures and methods for templated growth of high areal density heat assisted magnetic recording media |
| US10276201B1 (en) | 2015-11-02 | 2019-04-30 | WD Media, LLC | Dual phase MgO-X seed layers for heat assisted magnetic recording media |
| US9406329B1 (en) * | 2015-11-30 | 2016-08-02 | WD Media, LLC | HAMR media structure with intermediate layer underlying a magnetic recording layer having multiple sublayers |
| JP6832189B2 (ja) * | 2017-02-21 | 2021-02-24 | 昭和電工株式会社 | 磁気記録媒体及び磁気記録再生装置 |
| SG10202101868SA (en) * | 2017-03-10 | 2021-03-30 | Fuji Electric Co Ltd | Magnetic recording medium |
| US10276202B1 (en) * | 2018-04-23 | 2019-04-30 | Western Digital Technologies, Inc. | Heat-assisted magnetic recording (HAMR) medium with rhodium or rhodium-based alloy heat-sink layer |
| TWI659118B (zh) * | 2018-06-06 | 2019-05-11 | 國立中興大學 | Solar absorption device |
| JP7244721B2 (ja) * | 2019-04-09 | 2023-03-23 | 株式会社レゾナック | 磁気記録媒体および磁気記憶装置 |
| US11521648B2 (en) | 2020-11-04 | 2022-12-06 | Western Digital Technologies, Inc. | Heat-assisted magnetic recording (HAMR) medium with multilayered underlayer for the recording layer |
| US11763845B2 (en) * | 2021-12-08 | 2023-09-19 | Seagate Technology Llc | Magnetic stack including non-magnetic seed layer for hard disk drive media |
| US20230238023A1 (en) * | 2022-01-27 | 2023-07-27 | Western Digital Technologies, Inc. | Heat-assisted magnetic recording (hamr) media with dual-layer media carbon overcoat |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4738885A (en) * | 1986-02-24 | 1988-04-19 | Kyocera Corporation | Magnetic disk, substrate therefor and process for preparation thereof |
| EP0520157A1 (en) * | 1991-06-24 | 1992-12-30 | Nkk Corporation | Magnetic disk |
| WO1993021629A1 (en) | 1992-04-15 | 1993-10-28 | Tulip Memory Systems, Inc. | Precision-etched textured stop/start zone for magnetic-recording disks |
| US5487931A (en) * | 1993-12-02 | 1996-01-30 | Annacone; William R. | Rigid disc substrate comprising a central hard core substrate with a hard, thermally and mechanically matched overlying smoothing layer and method for making the same |
| WO1998058367A1 (en) * | 1997-06-18 | 1998-12-23 | The Dow Chemical Company | A multilayer hard drive disk and method to produce same |
| JP2002329305A (ja) * | 2001-04-27 | 2002-11-15 | Showa Denko Kk | 磁気記録媒体、その製造方法、および磁気記録再生装置 |
| JP2005004899A (ja) * | 2003-06-12 | 2005-01-06 | Fuji Photo Film Co Ltd | 磁気記録媒体およびその製造方法 |
| US7521137B2 (en) * | 2005-01-12 | 2009-04-21 | Seagate Technology Llc | Patterned thin films and use of such films as thermal control layers in heat assisted magnetic recording media |
| JP2006309919A (ja) * | 2005-03-30 | 2006-11-09 | Fujitsu Ltd | 垂直磁気記録媒体、その製造方法および磁気記憶装置 |
| JP2007026558A (ja) * | 2005-07-15 | 2007-02-01 | Univ Of Tokyo | 磁気記録媒体及びその製造方法 |
| JP2008293559A (ja) * | 2007-05-22 | 2008-12-04 | Fujitsu Ltd | 磁気記録媒体及び磁気記憶装置 |
| KR101496171B1 (ko) * | 2007-12-14 | 2015-02-27 | 시게이트 테크놀로지 엘엘씨 | 자기박막구조체, 자기기록매체 및 그 제조방법 |
| JP5177407B2 (ja) * | 2008-07-16 | 2013-04-03 | 学校法人早稲田大学 | 磁気異方性垂直磁化膜及びその形成方法並びに磁気記録媒体及びその製造方法 |
| US8268462B2 (en) * | 2008-12-22 | 2012-09-18 | Seagate Technology Llc | Hybrid grain boundary additives |
| US8685547B2 (en) * | 2009-02-19 | 2014-04-01 | Seagate Technology Llc | Magnetic recording media with enhanced writability and thermal stability |
| JP5561766B2 (ja) * | 2010-02-04 | 2014-07-30 | 昭和電工株式会社 | 熱アシスト磁気記録媒体及び磁気記憶装置 |
| JP5570270B2 (ja) | 2010-03-29 | 2014-08-13 | 昭和電工株式会社 | 熱アシスト磁気記録媒体及び磁気記憶装置 |
| JP5290468B2 (ja) * | 2010-12-20 | 2013-09-18 | Ｊｘ日鉱日石金属株式会社 | Ｃ粒子が分散したＦｅ−Ｐｔ系スパッタリングターゲット |
| JP6182833B2 (ja) * | 2012-07-26 | 2017-08-23 | 富士電機株式会社 | 垂直磁気記録媒体 |
-
2013
- 2013-09-24 WO PCT/US2013/061505 patent/WO2014052344A1/en not_active Ceased
- 2013-09-24 CN CN201380060675.9A patent/CN105027202B/zh not_active Expired - Fee Related
- 2013-09-24 SG SG11201502412YA patent/SG11201502412YA/en unknown
- 2013-09-24 JP JP2015534606A patent/JP6185591B2/ja active Active
- 2013-09-24 MY MYPI2015700931A patent/MY178275A/en unknown
- 2013-09-24 US US14/035,931 patent/US9368142B2/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11900978B1 (en) | 2022-08-11 | 2024-02-13 | Western Digital Technologies, Inc. | Magnetic recording medium with underlayer configured to reduce diffusion of titanium into a magnetic recording layer |
| US12272392B2 (en) | 2022-08-25 | 2025-04-08 | Western Digital Technologies, Inc. | Media structure with selected segregants configured to improve heat-assisted magnetic recording |
| US12412598B2 (en) | 2023-09-01 | 2025-09-09 | Western Digital Technologies, Inc. | Media underlayer structure for heat-assisted magnetic recording and media fabrication methods therefor |
| US12308056B2 (en) | 2023-10-12 | 2025-05-20 | Western Digital Technologies, Inc. | Magnetic recording medium with magnesium-titanium oxide (MTO) layer formed using pulsed direct current sputter deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| US9368142B2 (en) | 2016-06-14 |
| MY178275A (en) | 2020-10-07 |
| WO2014052344A1 (en) | 2014-04-03 |
| CN105027202B (zh) | 2018-04-13 |
| US20140093748A1 (en) | 2014-04-03 |
| CN105027202A (zh) | 2015-11-04 |
| JP2015530691A (ja) | 2015-10-15 |
| SG11201502412YA (en) | 2015-05-28 |
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