TWI659118B - Solar absorption device - Google Patents

Solar absorption device Download PDF

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TWI659118B
TWI659118B TW107119497A TW107119497A TWI659118B TW I659118 B TWI659118 B TW I659118B TW 107119497 A TW107119497 A TW 107119497A TW 107119497 A TW107119497 A TW 107119497A TW I659118 B TWI659118 B TW I659118B
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solar
solar energy
energy absorbing
top surface
film
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劉俞辰
呂福興
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國立中興大學
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    • C23C14/34—Sputtering
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
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    • H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

本發明係一種太陽能吸收裝置，由一基材與一太陽能吸收膜所組成，該太陽能吸收膜具有一底面與一頂面，該底面係與該基材連接，該頂面則相背與該底面，該太陽能吸收膜之成份為TiN xO y，由該底面至該頂面，x由1變至0.1，y由0.2變至2；藉此，該太陽能吸收裝置不僅結構單純、製程快速，而且成本低廉，極具市場競爭潛力。

Description

太陽能吸收裝置
本發明與太陽能吸收裝置有關，特別是指一種具有太陽能吸收膜的太陽能吸收裝置，結構單純、製程快速且成本低廉。
習知太陽能吸收裝置係於一基材上設置有多層鍍膜，用來提高太陽能吸收率並降低熱放射率，該基材為玻璃、不鏽鋼或銅合金等金屬，該多層鍍膜包括由內而外依序設在基材表面的金屬紅外光反射層、選擇性吸收層與抗反射層，該選擇性吸收層可提高太陽能的吸收率，該抗反射層具有高透明度而可提高太陽光入射量，同時可降低太陽光反射量，藉由此種多層鍍膜結構，可有效提高太陽能的吸收率。
然而，此種多層鍍膜結構製造時需要分成三個步驟，於基材上依序鍍上不同成份的薄層，因此，不僅製造費工、耗時，更連帶提高製造成本，降低產品的市場競爭力。
本發明之另一目的在於提供一種具有太陽能吸收膜的太陽能吸收裝置，結構單純、製程快速且成本低廉，極具市場競爭潛力。
為了達成上述目的，本發明之太陽能吸收裝置係由一基材與一太陽能吸收膜所組成，該太陽能吸收膜具有一底面與一頂面，該底面係與該基材連接，該頂面則相背與該底面，該太陽能吸收膜之成份為TiN xO y，由該底面至該頂面，x由1變至0.1，y由0.2變至2。
藉此，該太陽能吸收裝置不僅結構單純、製程快速，而且成本低廉，極具市場競爭潛力。
以下藉由一較佳實施例配合圖式，詳細說明本發明的技術內容及特徵，如第1圖所示，係本發明一較佳實施例所提供之太陽能吸收裝置1，係由一基材10與一太陽能吸收膜20所組成。
該基材10為不鏽鋼材質，於其他實施例，亦可為矽、玻璃、銅合金、其他金屬或其他材質。
該太陽能吸收膜20具有一與該基材10連接的底面22、以及一相背於該底面22之頂面24，該太陽能吸收膜20之成份為TiN xO y，由該底面22至該頂面24，x由0.89變至0.23，y由0.37變至1.91，該太陽能吸收膜20的成份變化是階段性的，該太陽能吸收膜20可細分為六小層，總厚度約200nm，由該底面22至該頂面24依序為第一層25、第二層26、第三層27、第四層28、第五層29與第六層30，各小層的x與y數值如表一所示，該些數值是以X光光電子能譜儀(ULVAC-PHI PHI 5000 VersaProbe)分析出各小層的Ti-2p、N-1s、O-1s能峰，計算各元素能峰積分面積I，另於文獻查詢各元素靈敏因子F，代入以下公式求得元素比例： 表一
x值 y值
第六層 0.23 1.91
第五層 0.29 1.70
第四層 0.50 1.27
第三層 0.65 0.93
第二層 0.70 0.80
第一層 0.89 0.37
其中，各小層25~30的N/O含量不同，由第一層25至第六層30氮氧化鈦的特性由導體轉變成半導體，甚至是絕緣體，光性也同時由不透明轉變半透明，最後到透明，具有導體特性的氮氧化鈦能夠取代習知結構中的金屬紅外光反射層，具有半導體特性的氮氧化鈦可作為習知結構中的選擇性吸收層，透明且具有絕緣特性的氮氧化鈦則可作為習知結構中的抗反射層，因此以氮氧化鈦單一種材料即能夠取代習知太陽能吸收裝置中的多層鍍膜結構。
為了驗證本發明之效果，取該太陽能吸收裝置1進行太陽能吸收率(Solar absorptance) 與熱放射率(Thermal emittance)之量測，其中，太陽能吸收率即該太陽能吸收裝置1能吸收的太陽光能量強度與太陽光原始能量強度之比值，計算式如下：
利用含積分球之紫外光-可見光-近紅外光光譜儀(HITACHI U4100)，以空氣作為背景值，量測波長範圍0.25~2.5 μm之反射率R(λ)，並以上式計算出太陽能吸收率為85.2%，其中I s(λ)是採用ISO標準9845-1(1992)定義之空氣質量(Air mass, AM) 1.5的太陽輻射能量來計算。
熱放射率即該太陽能吸收裝置1本身熱的輻射強度與黑體的熱輻射強度之比值，計算式如下：
實際量測作業是利用傅立葉轉換紅外線光譜儀(Thermo Scientific Nicolet iS5)，以金作為背景值，量測特定溫度下波長範圍2.5~25 μm之反射率R(λ,T)，並以上式計算出熱放射率為7.2%，I b(λ,T)係依據普朗克黑體輻射定律(Blackbody radiation law)求得。
依據上述量側方法，本實施例之太陽能吸收裝置1的太陽能吸收率為85.2%，熱放射率為7.2%，與習知具有多層鍍膜的太陽能吸收裝置效果接近，但本發明之太陽能吸收裝置1僅具有單一太陽能吸收膜20，其中各小層25~30的成份雖不同，然濺鍍各小層25~30時可藉由調整空氣與氬氣的比例，即可相當容易地調整TiN xO y中x與y的數值，因此，省去了習知結構濺鍍金屬紅外光反射層、選擇性吸收層與抗反射層三個程序中重複抽真空等步驟，不僅節省製程時間，更能降低製造成本，提升產品的市場競爭力，從而達成本發明之目的。
除了以上實施例外，進一步的研究結果顯示，該基材10以不鏽鋼以外的其他材質替代效果均佳，實際量測數據如表二所列，甚至，將原本分成若干小層的結構改成漸變式的，亦即，x與y的數值變化由階段性的改成連續性的，亦具有相當高的太陽能吸收率與相當低的熱放射率，並且，進一步的實驗顯示，該太陽能吸收膜之成份(TiN xO y)由該底面至該頂面，x由1變至0.1，y由0.2變至2，其吸收太陽熱能的效果均佳，舉凡此等變化均應為本發明申請專利範圍所涵蓋。 表二
太陽能吸收膜/基材 TiNxOy/矽 TiNxOy/玻璃 TiNxOy/銅
太陽能吸收率(%) 84.3-86.3 84.1-86.4 82.2
熱放射率(%) 11.3-13.2 12.2-15.5 6.7
1‧‧‧太陽能吸收裝置
10‧‧‧基材
20‧‧‧太陽能吸收膜
22‧‧‧底面
24‧‧‧頂面
25‧‧‧第一層
26‧‧‧第二層
27‧‧‧第三層
28‧‧‧第四層
29‧‧‧第五層
30‧‧‧第六層
第1圖為本發明一較佳實施例之剖視圖。

Claims (5)

  1. 一種太陽能吸收裝置，係由一基材與一太陽能吸收膜所組成；該太陽能吸收膜具有： 一底面，係與該基材連接； 一頂面，相背於該底面； 該太陽能吸收膜之成份為TiN xO y，由該底面至該頂面，x由1變至0.1，y由0.2變至2。
  2. 如請求項1所述之太陽能吸收裝置，由該太陽能吸收膜之底面至該頂面，x由0.89變至0.23，y由0.37變至1.91。
  3. 如請求項1或2所述之太陽能吸收裝置，由該太陽能吸收膜之底面至該頂面，x與y的數值變化是階段性的。
  4. 如請求項1或2所述之太陽能吸收裝置，由該太陽能吸收膜之底面至該頂面，x與y的數值變化是連續性的。
  5. 如請求項1或2所述之太陽能吸收裝置，其中該基材為金屬、玻璃或矽材質。
TW107119497A 2018-06-06 2018-06-06 Solar absorption device TWI659118B (zh)

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