CN1050246C - 蓝宝石平面上的氧化锌压电晶体膜 - Google Patents
蓝宝石平面上的氧化锌压电晶体膜 Download PDFInfo
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 126
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 62
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 38
- 239000010980 sapphire Substances 0.000 title claims abstract description 38
- 239000013078 crystal Substances 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000011701 zinc Substances 0.000 claims abstract description 20
- 238000004544 sputter deposition Methods 0.000 claims abstract description 18
- 229910052802 copper Inorganic materials 0.000 claims abstract description 15
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 10
- 238000010897 surface acoustic wave method Methods 0.000 claims description 29
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229910017518 Cu Zn Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 description 31
- 238000000034 method Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910007565 Zn—Cu Inorganic materials 0.000 description 4
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000008676 import Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
一种氧化锌压电晶体膜,由溅射法外延生长于R-平面蓝宝石衬底上时,使用含相对于Zn和Cu的总量为不大于4.5%(重量)的Cu的靶极,就可使该氧化锌压电晶体膜含铜。这样,就可获得一种具有优异取向的氧化锌压电晶体膜。
Description
本发明涉及一种提供在蓝宝石平面上的氧化锌压电晶体膜,该晶体膜用于在一种声表面波器件中的声表面波的传播。
用于SAW器件的一种典型的声表面波(SAW)基片,由在一种非压电衬底上提供一种压电晶体膜而制得。为激发声表面波,由一种叉指电极形成的换能器提供于一压电晶体膜的外表面,或提供于该压电晶体膜和非压电衬底间的界面上。
关于上述SAW基片,已知的是一种由蓝宝石(α-Al2O3)的非压电衬底和一氧化锌(ZnO)的压电晶体膜形成的SAW基片。与这样的氧化锌/蓝宝石SAW基片相关,又进一步使用了(0112)一平面切向蓝宝石(以下称为“R-平面蓝宝石”),这样,(1120)—平面氧化锌(以下称为Q-平面ZnO)外延生长在此R-平面上。
图1显示了一种SAW基片3,该基片如前所述,由在一R-平面蓝宝石衬底1上生长Q-平面ZnO外延膜2而获得。与该SAW基片3有关,当该蓝宝石衬底1的R-平面和氧化锌外延膜2的Q-平面互为平行,且氧化锌外延膜2的〔0001〕方向(C-轴向)和该蓝宝石衬底1的〔0111〕方向(D-轴向)互为平行,如图1中箭矢所示,则SAW基片3可提供一种高声速和高耦合。
为了在蓝宝石衬底1上形成氧化锌外延膜2,通常使用化学输运法、CVD或溅射法。而上述方法中,特别广泛使用溅射法。
当用溅射法在一蓝宝石的R-平面上形成一纯氧化锌薄膜时,虽然氧化锌(ZnO)的C-轴一定程度上平行于该蓝宝石衬底,且在ZnO的Q-平面上获得一定程度的取向,该取向仍不足以将由这样一层ZnO薄膜形成的SAW基片用于实用。结果,该叉指换能器的特征,如机电耦合系数,仍劣于使用这样的SAW基片的SAW器件中的预定值。
因此,本发明的一个目的是,改善外延生长于上述R-平面蓝宝石衬底上的一种ZnO压电晶体膜的晶体取向。
本发明涉及一种外延生长蓝宝石 R-平面之上的Q-平面氧化锌压电晶体膜,本发明的特征在于,该氧化锌压电晶体膜含有对于Zn和Cu总量而言按重量不大于4.5%的Cu。
上述的、相对于Zn和Cu的总量的Cu含量较好地是选用0.4-4.0%(重量)范围,更好地是选用0.6-3.0%(重量)范围,最好地是选用0.9-2.0%(重量)范围。
在本发明中,其上形成ZnO压电晶体膜的蓝宝石的R-平面在制造过程中,有占精确的R-平面的约±2%的分散。然而,这样一个范围内的分散实质上并不导致效果的不同。换句话说,可以在蓝宝石上形成一个Q-平面ZnO外延膜,尽管其切割平面偏差约±2%。
根据本发明,如从下述实施例的描述可清楚看到,可以获得一种具有优异取向的Q-平面ZnO压电晶体膜。因此,根据由该ZnO压电晶体膜所形成的SAW基片,可以改善叉指换能器的性能,如机电耦合系数,从而,由此提供一种完全可行的SAW器件。
结合附图,从下述对本发明的详细描述,将使得本发明的上述的、及其它的目的、特征、领域及优点更加显见。
图1为说明本发明所注意的SAW基片的透视图;
图2为说明RF磁控溅射装置的剖视图;
图3为说明一衍射峰半带宽的定义图;
图4说明随Cu含量的ZnO薄膜中的衍射峰半带宽的变化。
如图1所示及以上所述,本发明涉及一种由在一R-平面蓝宝石衬底1上生长Q-平面ZnO外延膜2而获得的SAW基片3。在该SAW基片3中,ZnO外延膜2的C-轴向平行于该蓝宝石衬底1的D-轴向。该ZnO外延膜2不是纯ZnO所制,而是含有Cu。该Cu含量不大于Zn和Cu总量的4.5%(重量)。包含上述含量的Cu的ZnO外延膜2具有优异的取向。
如前所述,在R-平面蓝宝石衬底上含有前述量的Cu的Q-平面ZnO外延膜2的形成方法有化学输运法、CVD及溅射法。特别是,用溅射法,可以在较低温度下,获得具有优异、高品质的表面平滑度的ZnO外延膜2。
图2显示了一种RF磁控溅射装置4,作为一溅射器例子。该溅射装置4包括一气密容器5,并设有一进气口6和出气口7。一种适当的溅射气体从进气口6引进该容器5,而存留于该容器5的气体被一泵(图中未示)强制地从出气口7排放出。上述R-平面蓝宝石衬底1置于该容器5中,一靶极8置于正对着蓝宝石衬底1之下。一高频(RF)电源(9)施加高频电压于一阳极(未示)及一阴极(未示)之间。该阳极和阴极分别置于蓝宝石衬底1的上、下表面及靶极8。一磁铁10置于靶极8之下。
通过溅射装置4,含预定量Cu的ZnO外延膜2以下述任一方式生长于蓝宝石衬底1之上。
第一种方式,从掺有一预定量铜的Zn金属靶制得靶极8,同时,通过进气口6将(Ar+O2)气体导入容器5。Ar粒子撞击靶极8,使Zn粒子和Cu粒子跳出靶极8,这样,Zn粒子与O2反应,形成ZnO,而如此形成的ZnO粒子和铜粒粘附至蓝宝石衬底1之上。这样,就可以在蓝宝石衬底1之上形成含有一预定量的Cu的ZnO外延膜2。
在第二种方式中,靶极8由掺合了一定量的铜的ZnO陶瓷靶制得。而Ar气体通过进气口6导引进容器5。Ar粒子撞击靶极8,ZnO粒子及Cu粒子因而从靶8中跳出,粘附至蓝宝石衬底1之上。这样,可以在蓝宝石衬底1之上形成含预定量Cu的ZnO外延膜2。
如上所述,由将一预定量的Cu导入靶极8,可制得含一预定量铜的ZnO外延膜2。在溅射中,靶极的组成实质上与所获得的薄膜组成一致。这样,导入靶极的铜量相当于得到的ZnO外延膜中的铜含量。
为确认对外延生长于R-平面蓝宝石衬底之上的Q-平面ZnO膜添加Cu的影响,以图2所示的溅射装置4作下述实验。
首先,使用一些掺有不同量的Cu的Zn金属靶,在各种溅射条件下形成在R-平面蓝宝石衬底之上的、含铜的ZnO外延膜。各种溅射条件可分别由改变RF功率电平、衬底加热温度及气体压力(Ar∶O2=50∶50)而得到。
另一方面,纯Zn金属靶在类似上述的各种溅射条件下,被用来形成在R-平面蓝宝石衬底上的ZnO外延膜。
所得的样品的ZnO外延膜用一种X线衍射仪方法进行评价。该方法用来以X射线照射该薄膜而获得的衍射波,评价ZnO外延膜的结晶度。更具体地说,用一衍射自平行于蓝宝石衬底、即ZnO的Q-平面的晶体平面的衍射波,可在这样的ZnO外延膜中获得一个衍射峰。改善结晶取向,即,当峰值强度提高,晶体平面即被调整至进一步平行。这样的峰值强度可由在峰值强度的半值处,即,半带宽处的衍射强度值的宽度而得出,如图3所示。这样,半带宽度越小的薄膜,越是具有优异的晶体取向性能的高质薄膜。即,其晶体平面在平行程度上得到进一步规整化。
表1显示了ZnO的Q-平面的衍射峰半带宽,该ZnO Q-平面的衍射峰半带宽由用纯Zn靶和掺有2%(重量)的Cu的Zn靶(Zn-Cu靶),在各种溅射条件下形成ZnO外延膜及用X-线衍射仪方法分析而得。表1
RF功率(kW) | 衬底温度(℃) | 气体压力(乇) | 峰半带宽(°) | |
Zn靶 | Zn-Cu靶 | |||
2.2 | 200 | 5×10-3 | 1.5 | 1.10 |
2.2 | 250 | 5×10-3 | 1.3 | 0.65 |
1.0 | 150 | 5×10-3 | 2.4 | 1.26 |
1.0 | 200 | 5×10-3 | 2.0 | 1.13 |
1.0 | 250 | 5×10-3 | 1.1 | 0.44 |
从表1可明白,从该Zn-Cu靶制得的ZnO外延膜具有较小的峰值半带宽,并因此与那些在所有溅射条件下从Zn靶制得的ZnO外延膜比较起来,具更优异的结晶性。
当将这样的ZnO/蓝宝石衬底用作SAW基片时,衍射峰的半带宽度最好实际上小于约0.8°。在这一点上,在使用Zn靶时,在如表1所示的所有溅射条件下,无法得到具有优异实用性的薄膜。另一方面,可以明白,当使用Zn-Cu靶时,通过选择溅射条件可获得完全实用的ZnO外延膜。
表2所示的峰半带宽度为,在显示了最小的衍射峰半带宽度的溅射条件下,即,如表1中的RF功率1.0kW,衬底温度250℃及气体压力5×10-3乇,导入靶极的Cu含量在相对Zn和Cu的总量为0-5%(重量)的范围内变动时所获得的。图4为表2中内容的图示。表2
铜含量(%重量) | 峰半带宽度(°) |
0 | 1.10 |
1 | 0.40 |
2 | 0.44 |
4 | 0.87 |
5 | 1.28 |
从表2和图4可见,与不含Cu的膜比较,当Cu含量不大于4.5%(重量)时,膜的结晶取向性能得到改善。特别地,从图4可看到,当Cu含量从0.4-4.0%(重量)减至0.6-3.0%(重量)范围,进一步减至0.9-2.0%(重量)范围时,结晶性的改善效果尤其显著。
Claims (10)
1.一种外延生长于蓝宝石表面的(1120)—平面氧化锌压电晶体膜,该蓝宝石表面实质上平行于其(0112)—平面,其特征在于:
所述氧化锌压电晶体膜含有对Zn和Cu的总量不大于4.5重量%的Cu。
2.如权利要求1所述的氧化锌压电晶体膜,其特征在于,所述晶体膜含0.4-4.0重量%的Cu。
3,如权利要求2所述的氧化锌压电晶体膜,其特征在于,所述晶体膜含0.6-3.0重量%的Cu。
4.如权利要求3所述的氧化锌压电晶体膜,其特征在于,所述膜含0.9-2.0重量%的Cu。
5.如权利要求1所述的氧化锌压电晶体膜,其特征在于,所述晶体膜由溅射法形成。
6.一种用于声表面波器件的声表面波基片,其特征在于,所述基片包括:
一种具有基本上平行于其(0112)面的表面的(0112)—平面切割蓝宝石衬底;及
一种外延生长于所述蓝宝石衬底的所述表面上的(1120)—平面氧化锌压电晶体膜;
所述氧化锌压电晶体膜含有相对于Zn和Cu总量的、不大于4.5重量%的Cu。
7.如权利要求6所述的声表面波基片,其特征在于,所述的氧化锌压电晶体膜含0.4-4.0重量%的Cu。
8.如权利要求7所述的声表面波基片,其特征在于,所述的氧化锌压电晶体膜含0.6-3.0重量%的Cu。
9.如权利要求8所述的声表面波基片,其特征在于,所述的氧化锌压电晶体膜含0.9-2.0重量%的Cu。
10.如权利要求6所述的声表面波基片,其特征在于,所述的氧化锌压电晶体膜由溅射法形成。
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JP21509193A JP3085043B2 (ja) | 1993-08-05 | 1993-08-05 | サファイア面上の酸化亜鉛圧電結晶膜 |
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US6127768A (en) * | 1997-05-09 | 2000-10-03 | Kobe Steel Usa, Inc. | Surface acoustic wave and bulk acoustic wave devices using a Zn.sub.(1-X) Yx O piezoelectric layer device |
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- 1994-08-02 DE DE69414491T patent/DE69414491T2/de not_active Expired - Lifetime
- 1994-08-02 EP EP19940112041 patent/EP0638999B1/en not_active Expired - Lifetime
- 1994-08-03 KR KR1019940019168A patent/KR950007176A/ko not_active Application Discontinuation
- 1994-08-05 CN CN94109460A patent/CN1050246C/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
EP0638999B1 (en) | 1998-11-11 |
DE69414491D1 (de) | 1998-12-17 |
DE69414491T2 (de) | 1999-05-06 |
CN1103513A (zh) | 1995-06-07 |
JPH0750436A (ja) | 1995-02-21 |
US5532537A (en) | 1996-07-02 |
EP0638999A1 (en) | 1995-02-15 |
KR950007176A (ko) | 1995-03-21 |
JP3085043B2 (ja) | 2000-09-04 |
US5569548A (en) | 1996-10-29 |
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