CN104955854B - 表面活性剂及其制备和使用方法 - Google Patents

表面活性剂及其制备和使用方法 Download PDF

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Publication number
CN104955854B
CN104955854B CN201480006221.8A CN201480006221A CN104955854B CN 104955854 B CN104955854 B CN 104955854B CN 201480006221 A CN201480006221 A CN 201480006221A CN 104955854 B CN104955854 B CN 104955854B
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fbs
water
integer
surfactant
surfactants
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Chinese (zh)
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CN104955854A (zh
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W·M·拉曼纳
P·M·萨伍
J·M·科伦
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C303/00Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides
    • C07C303/36Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of amides of sulfonic acids
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C311/00Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F14/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F14/18Monomers containing fluorine
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
    • C08F290/06Polymers provided for in subclass C08G
    • C08F290/062Polyethers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
    • C08F290/06Polymers provided for in subclass C08G
    • C08F290/065Polyamides; Polyesteramides; Polyimides
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/004Surface-active compounds containing F
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66Non-ionic compounds
    • C11D1/83Mixtures of non-ionic with anionic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/426Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Engineering & Computer Science (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Detergent Compositions (AREA)
CN201480006221.8A 2013-01-29 2014-01-09 表面活性剂及其制备和使用方法 Active CN104955854B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361757790P 2013-01-29 2013-01-29
US61/757,790 2013-01-29
PCT/US2014/010769 WO2014120405A1 (en) 2013-01-29 2014-01-09 Surfactants and methods of making and using same

Publications (2)

Publication Number Publication Date
CN104955854A CN104955854A (zh) 2015-09-30
CN104955854B true CN104955854B (zh) 2017-09-05

Family

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Family Applications (1)

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CN201480006221.8A Active CN104955854B (zh) 2013-01-29 2014-01-09 表面活性剂及其制备和使用方法

Country Status (7)

Country Link
US (3) US9454082B2 (enExample)
EP (2) EP2951217B1 (enExample)
JP (1) JP6444316B2 (enExample)
KR (1) KR102171621B1 (enExample)
CN (1) CN104955854B (enExample)
TW (1) TWI604044B (enExample)
WO (1) WO2014120405A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102462889B1 (ko) * 2014-09-11 2022-11-02 쓰리엠 이노베이티브 프로퍼티즈 컴파니 플루오르화 계면활성제를 함유하는 조성물
US10308592B2 (en) 2014-09-23 2019-06-04 3M Innovative Properties Company Nitrogen containing hydrofluoroethers and methods of using same
US11859074B2 (en) * 2018-06-13 2024-01-02 3M Innovative Properties Company Curable fluoroelastomer composition
EP3811152B1 (en) * 2018-06-22 2022-03-23 Merck Patent GmbH A photoresist composition, a method for manufacturing a photoresist coating, etched photoresist coating, and etched si containing layer(s), and manufacturing a device using thereof
WO2020035776A1 (en) 2018-08-13 2020-02-20 3M Innovative Properties Company Curable fluoroelastomer composition
TW202035361A (zh) * 2018-12-12 2020-10-01 美商3M新設資產公司 氟化胺氧化物界面活性劑
KR102080780B1 (ko) * 2019-07-18 2020-02-24 영창케미칼 주식회사 리소그래피용 공정액 조성물 및 이를 사용한 패턴 형성 방법
KR102100432B1 (ko) * 2019-09-26 2020-05-15 영창케미칼 주식회사 포토 리소그래피용 공정액 조성물 및 이를 이용한 패턴 형성 방법
KR20210069352A (ko) * 2019-12-03 2021-06-11 쓰리엠 이노베이티브 프로퍼티즈 캄파니 세정액 조성물 및 이를 이용한 포토레지스트 재료의 표면처리 방법
USD1016192S1 (en) 2022-04-26 2024-02-27 Make Ideas, LLC Ball launcher

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043195A (en) * 1988-10-28 1991-08-27 Minnesota Mining & Manufacturing Company Static shielding film
CN1694939A (zh) * 2002-11-08 2005-11-09 3M创新有限公司 用于缓冲酸蚀刻溶液的氟化表面活性剂
CN1926227A (zh) * 2004-03-03 2007-03-07 3M创新有限公司 用于水性清洗溶液的氟化磺酰胺表面活性剂

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2915554A (en) * 1957-07-23 1959-12-01 Minnesota Mining & Mfg Non-ionic surfactant derivatives of perfluoro alkane-sulfonamides
DE2024909B2 (de) * 1970-05-22 1977-09-29 Bayer Ag, 5090 Leverkusen Verfahren zur herstellung von n-hydroxyalkyl-perfluoralkansulfonamiden und einige n,n-bis-(hydroxyalkyl)-perfluor-alkansulfonamide
US4089804A (en) 1976-12-30 1978-05-16 Ciba-Geigy Corporation Method of improving fluorinated surfactants
DE2921142A1 (de) * 1979-05-25 1980-12-11 Bayer Ag Verwendung von perfluoralkansulfonamid- salzen als tenside
JPS626255A (ja) * 1985-07-02 1987-01-13 Fuji Photo Film Co Ltd ハロゲン化銀写真感光材料
US5217767A (en) * 1988-10-28 1993-06-08 Minnesota Mining And Manufacturing Company Static shielding film
JPH02285081A (ja) * 1989-04-25 1990-11-22 Sanyo Chem Ind Ltd エッチング液
JP3217116B2 (ja) * 1992-03-06 2001-10-09 日産化学工業株式会社 低表面張力洗浄用組成物
US6380289B1 (en) * 1993-06-28 2002-04-30 3M Innovative Properties Company Thermoplastic composition comprising fluoroaliphatic radical-containing surface-modifying additive
US5688884A (en) 1995-08-31 1997-11-18 E. I. Du Pont De Nemours And Company Polymerization process
US6476114B2 (en) * 1997-11-19 2002-11-05 3M Innovative Properties Company Thermoplastic polymer film comprising a fluorochemical compound
AU1440901A (en) 1999-10-27 2001-05-08 3M Innovative Properties Company Fluorochemical sulfonamide surfactants
KR100446659B1 (ko) * 2001-05-09 2004-09-04 주식회사 엘지화학 비이온성 계면활성제를 포함하는 전해액과 이를 이용하는리튬이온 전지
US6582759B1 (en) * 2002-02-15 2003-06-24 3M Innovative Properties Company Optical elements comprising a fluorinated surface treatment comprising urethane, ester or phosphate linkages
JP4493393B2 (ja) 2004-04-23 2010-06-30 東京応化工業株式会社 リソグラフィー用リンス液
US7572848B2 (en) 2005-12-21 2009-08-11 3M Innovative Properties Company Coatable composition
US20080299487A1 (en) 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
US20080280230A1 (en) 2007-05-10 2008-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography process including a chemical rinse
WO2010074877A1 (en) 2008-12-23 2010-07-01 3M Innovative Properties Company Method of making a composition and aqueous composition preparable thereby
WO2010074878A1 (en) * 2008-12-23 2010-07-01 3M Innovative Properties Company Aqueous composition containing fluorinated sulfonamide and sulfonamidate compounds
US9551936B2 (en) * 2011-08-10 2017-01-24 3M Innovative Properties Company Perfluoroalkyl sulfonamides surfactants for photoresist rinse solutions

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043195A (en) * 1988-10-28 1991-08-27 Minnesota Mining & Manufacturing Company Static shielding film
CN1694939A (zh) * 2002-11-08 2005-11-09 3M创新有限公司 用于缓冲酸蚀刻溶液的氟化表面活性剂
CN1926227A (zh) * 2004-03-03 2007-03-07 3M创新有限公司 用于水性清洗溶液的氟化磺酰胺表面活性剂

Also Published As

Publication number Publication date
TWI604044B (zh) 2017-11-01
KR102171621B1 (ko) 2020-10-29
EP2951217A1 (en) 2015-12-09
KR20150111986A (ko) 2015-10-06
EP2951217A4 (en) 2016-07-13
US9454082B2 (en) 2016-09-27
EP2951217B1 (en) 2017-08-16
US9562212B2 (en) 2017-02-07
EP3263611A1 (en) 2018-01-03
WO2014120405A1 (en) 2014-08-07
US20170114308A1 (en) 2017-04-27
EP3263611B1 (en) 2019-04-10
JP6444316B2 (ja) 2018-12-26
JP2016504482A (ja) 2016-02-12
US20160376533A1 (en) 2016-12-29
US20150370171A1 (en) 2015-12-24
US9725683B2 (en) 2017-08-08
TW201432046A (zh) 2014-08-16
CN104955854A (zh) 2015-09-30

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