CN104937848B - N阱切换电路 - Google Patents

N阱切换电路 Download PDF

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Publication number
CN104937848B
CN104937848B CN201480004776.9A CN201480004776A CN104937848B CN 104937848 B CN104937848 B CN 104937848B CN 201480004776 A CN201480004776 A CN 201480004776A CN 104937848 B CN104937848 B CN 104937848B
Authority
CN
China
Prior art keywords
pmos transistor
well
voltage
switching circuit
gate oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480004776.9A
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English (en)
Chinese (zh)
Other versions
CN104937848A (zh
Inventor
E·特泽格鲁
G·A·尤维戈哈拉
S·S·尹
B·加内桑
A·C·科塔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN104937848A publication Critical patent/CN104937848A/zh
Application granted granted Critical
Publication of CN104937848B publication Critical patent/CN104937848B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201480004776.9A 2013-01-16 2014-01-10 N阱切换电路 Active CN104937848B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/742,964 US8787096B1 (en) 2013-01-16 2013-01-16 N-well switching circuit
US13/742,964 2013-01-16
PCT/US2014/011138 WO2014113295A1 (en) 2013-01-16 2014-01-10 N-well switching circuit

Publications (2)

Publication Number Publication Date
CN104937848A CN104937848A (zh) 2015-09-23
CN104937848B true CN104937848B (zh) 2017-12-05

Family

ID=50031588

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480004776.9A Active CN104937848B (zh) 2013-01-16 2014-01-10 N阱切换电路

Country Status (6)

Country Link
US (2) US8787096B1 (enExample)
EP (1) EP2946474B1 (enExample)
JP (1) JP6092427B2 (enExample)
KR (1) KR101557812B1 (enExample)
CN (1) CN104937848B (enExample)
WO (1) WO2014113295A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8787096B1 (en) 2013-01-16 2014-07-22 Qualcomm Incorporated N-well switching circuit
US9082498B2 (en) * 2013-08-08 2015-07-14 Qualcomm Incorporated N-well switching circuit
TWI739734B (zh) 2015-02-23 2021-09-21 紐西蘭商藍瑟科技紐西蘭有限公司 用於將甲烷轉化為產物之重組產醋酸細菌
CN105049029B (zh) * 2015-07-06 2018-05-04 上海巨微集成电路有限公司 一种pmos管衬底切换电路
JP6905518B2 (ja) 2015-10-13 2021-07-21 ランザテク・ニュージーランド・リミテッド エネルギー発生発酵経路を含む遺伝子操作細菌
KR20180127632A (ko) 2015-12-03 2018-11-29 란자테크 뉴질랜드 리미티드 가스 발효 아세토젠에서의 효율을 개선하기 위한 아르기닌 보충
KR20180118651A (ko) 2016-02-01 2018-10-31 란자테크 뉴질랜드 리미티드 통합형 발효 및 전해 공정
EP3420089B1 (en) 2016-02-26 2021-12-29 LanzaTech NZ, Inc. Crispr/cas systems for c-1 fixing bacteria
US9570192B1 (en) 2016-03-04 2017-02-14 Qualcomm Incorporated System and method for reducing programming voltage stress on memory cell devices
AU2019218389B2 (en) 2018-02-12 2024-09-05 Lanzatech, Inc. A process for improving carbon conversion efficiency
AU2019257224B2 (en) 2018-04-20 2024-12-19 Lanzatech, Inc. Intermittent electrolysis streams
CN113225056A (zh) * 2021-05-21 2021-08-06 上海韦尔半导体股份有限公司 一种控制电路、电路控制方法及电子产品
US12212315B1 (en) * 2023-01-04 2025-01-28 Cadence Design Systems, Inc. Interface device

Citations (6)

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CN1253379A (zh) * 1998-09-09 2000-05-17 株式会社日立制作所 半导体集成电路装置
US6377112B1 (en) * 2000-12-05 2002-04-23 Semiconductor Components Industries Llc Circuit and method for PMOS device N-well bias control
US6452858B1 (en) * 1999-11-05 2002-09-17 Hitachi, Ltd. Semiconductor device
CN101034884A (zh) * 2006-03-06 2007-09-12 阿尔特拉公司 带有晶体管衬底偏置的集成电路的抑制闩锁电路
CN101034882A (zh) * 2006-03-06 2007-09-12 阿尔特拉公司 带有闩锁抑制的可调节晶体管衬底偏置发生电路
CN101485088A (zh) * 2006-05-03 2009-07-15 皇家飞利浦电子股份有限公司 甚低功率的模拟补偿电路

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KR0169157B1 (ko) * 1993-11-29 1999-02-01 기다오까 다까시 반도체 회로 및 mos-dram
JP3264622B2 (ja) 1996-07-16 2002-03-11 株式会社東芝 半導体装置
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JP4105833B2 (ja) * 1998-09-09 2008-06-25 株式会社ルネサステクノロジ 半導体集積回路装置
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KR100728950B1 (ko) * 2004-03-11 2007-06-15 주식회사 하이닉스반도체 내부전압 발생장치
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US8787096B1 (en) 2013-01-16 2014-07-22 Qualcomm Incorporated N-well switching circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1253379A (zh) * 1998-09-09 2000-05-17 株式会社日立制作所 半导体集成电路装置
US6452858B1 (en) * 1999-11-05 2002-09-17 Hitachi, Ltd. Semiconductor device
US6377112B1 (en) * 2000-12-05 2002-04-23 Semiconductor Components Industries Llc Circuit and method for PMOS device N-well bias control
CN101034884A (zh) * 2006-03-06 2007-09-12 阿尔特拉公司 带有晶体管衬底偏置的集成电路的抑制闩锁电路
CN101034882A (zh) * 2006-03-06 2007-09-12 阿尔特拉公司 带有闩锁抑制的可调节晶体管衬底偏置发生电路
CN101485088A (zh) * 2006-05-03 2009-07-15 皇家飞利浦电子股份有限公司 甚低功率的模拟补偿电路

Also Published As

Publication number Publication date
KR101557812B1 (ko) 2015-10-06
WO2014113295A1 (en) 2014-07-24
US20140198588A1 (en) 2014-07-17
EP2946474B1 (en) 2016-07-27
US20140369152A1 (en) 2014-12-18
US8787096B1 (en) 2014-07-22
CN104937848A (zh) 2015-09-23
EP2946474A1 (en) 2015-11-25
US9252765B2 (en) 2016-02-02
KR20150097815A (ko) 2015-08-26
JP6092427B2 (ja) 2017-03-08
JP2016511933A (ja) 2016-04-21

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