JP2016511933A5 - - Google Patents

Download PDF

Info

Publication number
JP2016511933A5
JP2016511933A5 JP2015552832A JP2015552832A JP2016511933A5 JP 2016511933 A5 JP2016511933 A5 JP 2016511933A5 JP 2015552832 A JP2015552832 A JP 2015552832A JP 2015552832 A JP2015552832 A JP 2015552832A JP 2016511933 A5 JP2016511933 A5 JP 2016511933A5
Authority
JP
Japan
Prior art keywords
well
pmos transistor
high voltage
mode
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2015552832A
Other languages
English (en)
Japanese (ja)
Other versions
JP6092427B2 (ja
JP2016511933A (ja
Filing date
Publication date
Priority claimed from US13/742,964 external-priority patent/US8787096B1/en
Application filed filed Critical
Publication of JP2016511933A publication Critical patent/JP2016511933A/ja
Publication of JP2016511933A5 publication Critical patent/JP2016511933A5/ja
Application granted granted Critical
Publication of JP6092427B2 publication Critical patent/JP6092427B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2015552832A 2013-01-16 2014-01-10 ｎウェル切替回路 Expired - Fee Related JP6092427B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/742,964 US8787096B1 (en) 2013-01-16 2013-01-16 N-well switching circuit
US13/742,964 2013-01-16
PCT/US2014/011138 WO2014113295A1 (en) 2013-01-16 2014-01-10 N-well switching circuit

Publications (3)

Publication Number Publication Date
JP2016511933A JP2016511933A (ja) 2016-04-21
JP2016511933A5 true JP2016511933A5 (enExample) 2017-01-19
JP6092427B2 JP6092427B2 (ja) 2017-03-08

Family

ID=50031588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015552832A Expired - Fee Related JP6092427B2 (ja) 2013-01-16 2014-01-10 ｎウェル切替回路

Country Status (6)

Country Link
US (2) US8787096B1 (enExample)
EP (1) EP2946474B1 (enExample)
JP (1) JP6092427B2 (enExample)
KR (1) KR101557812B1 (enExample)
CN (1) CN104937848B (enExample)
WO (1) WO2014113295A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8787096B1 (en) 2013-01-16 2014-07-22 Qualcomm Incorporated N-well switching circuit
US9082498B2 (en) * 2013-08-08 2015-07-14 Qualcomm Incorporated N-well switching circuit
TWI739734B (zh) 2015-02-23 2021-09-21 紐西蘭商藍瑟科技紐西蘭有限公司 用於將甲烷轉化為產物之重組產醋酸細菌
CN105049029B (zh) * 2015-07-06 2018-05-04 上海巨微集成电路有限公司 一种pmos管衬底切换电路
JP6905518B2 (ja) 2015-10-13 2021-07-21 ランザテク・ニュージーランド・リミテッド エネルギー発生発酵経路を含む遺伝子操作細菌
KR20180127632A (ko) 2015-12-03 2018-11-29 란자테크 뉴질랜드 리미티드 가스 발효 아세토젠에서의 효율을 개선하기 위한 아르기닌 보충
KR20180118651A (ko) 2016-02-01 2018-10-31 란자테크 뉴질랜드 리미티드 통합형 발효 및 전해 공정
EP3420089B1 (en) 2016-02-26 2021-12-29 LanzaTech NZ, Inc. Crispr/cas systems for c-1 fixing bacteria
US9570192B1 (en) 2016-03-04 2017-02-14 Qualcomm Incorporated System and method for reducing programming voltage stress on memory cell devices
AU2019218389B2 (en) 2018-02-12 2024-09-05 Lanzatech, Inc. A process for improving carbon conversion efficiency
AU2019257224B2 (en) 2018-04-20 2024-12-19 Lanzatech, Inc. Intermittent electrolysis streams
CN113225056A (zh) * 2021-05-21 2021-08-06 上海韦尔半导体股份有限公司 一种控制电路、电路控制方法及电子产品
US12212315B1 (en) * 2023-01-04 2025-01-28 Cadence Design Systems, Inc. Interface device

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4670668A (en) 1985-05-09 1987-06-02 Advanced Micro Devices, Inc. Substrate bias generator with power supply control means to sequence application of bias and power to prevent CMOS SCR latch-up
KR0169157B1 (ko) * 1993-11-29 1999-02-01 기다오까 다까시 반도체 회로 및 mos-dram
JP3264622B2 (ja) 1996-07-16 2002-03-11 株式会社東芝 半導体装置
US5844425A (en) 1996-07-19 1998-12-01 Quality Semiconductor, Inc. CMOS tristate output buffer with having overvoltage protection and increased stability against bus voltage variations
JP4105833B2 (ja) * 1998-09-09 2008-06-25 株式会社ルネサステクノロジ 半導体集積回路装置
TW453032B (en) * 1998-09-09 2001-09-01 Hitachi Ltd Semiconductor integrated circuit apparatus
US6452858B1 (en) * 1999-11-05 2002-09-17 Hitachi, Ltd. Semiconductor device
US6377112B1 (en) 2000-12-05 2002-04-23 Semiconductor Components Industries Llc Circuit and method for PMOS device N-well bias control
US6573134B2 (en) * 2001-03-27 2003-06-03 Sharp Laboratories Of America, Inc. Dual metal gate CMOS devices and method for making the same
US7218151B1 (en) * 2002-06-28 2007-05-15 University Of Rochester Domino logic with variable threshold voltage keeper
US6882188B1 (en) * 2003-09-30 2005-04-19 Faraday Technology Corp. Input/output buffer
US7038274B2 (en) * 2003-11-13 2006-05-02 Volterra Semiconductor Corporation Switching regulator with high-side p-type device
US7046493B2 (en) * 2003-12-12 2006-05-16 Faraday Technology Corp. Input/output buffer protection circuit
KR100728950B1 (ko) * 2004-03-11 2007-06-15 주식회사 하이닉스반도체 내부전압 발생장치
FR2894373B1 (fr) * 2005-12-07 2008-01-04 Atmel Corp Cellule anti-fusible autonome
US7355437B2 (en) * 2006-03-06 2008-04-08 Altera Corporation Latch-up prevention circuitry for integrated circuits with transistor body biasing
US7330049B2 (en) * 2006-03-06 2008-02-12 Altera Corporation Adjustable transistor body bias generation circuitry with latch-up prevention
TWI451697B (zh) * 2006-05-03 2014-09-01 Synopsys Inc 極低功率類比補償電路
US7863962B2 (en) * 2008-04-17 2011-01-04 National Semiconductor Corporation High voltage CMOS output buffer constructed from low voltage CMOS transistors
US7800179B2 (en) * 2009-02-04 2010-09-21 Fairchild Semiconductor Corporation High speed, low power consumption, isolated analog CMOS unit
CN101997305B (zh) 2009-08-26 2013-04-10 安凯(广州)微电子技术有限公司 一种反向电压保护电路及功率管装置
US8787096B1 (en) 2013-01-16 2014-07-22 Qualcomm Incorporated N-well switching circuit

Similar Documents

Publication Publication Date Title
JP6092427B2 (ja) ｎウェル切替回路
JP2016511933A5 (enExample)
US8184489B2 (en) Level shifting circuit
CN101553878B (zh) 包含并联连接的基准磁隧道结以提供最优基准阻抗的磁隧道结反熔丝电路
US9837140B2 (en) Semiconductor device
US20250104785A1 (en) Non-volatile memory circuit and method
US9142319B2 (en) Semiconductor device employing fuse programming
US9082498B2 (en) N-well switching circuit
US7764108B2 (en) Electrical fuse circuit
US7257012B2 (en) Nonvolatile semiconductor memory device using irreversible storage elements
JP2010182365A (ja) アンチヒューズ回路及び半導体記憶装置
JP2009283602A (ja) 不揮発性半導体メモリ
US9780030B2 (en) Integrated circuit
US9479169B1 (en) Control circuit applied in e-fuse system and related method
US7379358B2 (en) Repair I/O fuse circuit of semiconductor memory device
KR101210285B1 (ko) 전기적인 퓨즈 프로그래밍을 이용한 1ｔ-ｓｒａｍ의 리던던시 제어 회로
WO2016123731A1 (en) Apparatuses and methods for transistor protection by charge sharing
JPH0560200B2 (enExample)
US20170179948A1 (en) Signal transfer circuit and circuit for generating hit signal including the same