CN104849217B - 分析装置及电子设备 - Google Patents

分析装置及电子设备 Download PDF

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Publication number
CN104849217B
CN104849217B CN201510084817.6A CN201510084817A CN104849217B CN 104849217 B CN104849217 B CN 104849217B CN 201510084817 A CN201510084817 A CN 201510084817A CN 104849217 B CN104849217 B CN 104849217B
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light
transmitting layer
metal
thickness
wavelength
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CN104849217A (zh
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杉本守
江成芽久美
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Seiko Epson Corp
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Seiko Epson Corp
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55Specular reflectivity
    • G01N21/552Attenuated total reflection
    • G01N21/553Attenuated total reflection and using surface plasmons
    • G01N21/554Attenuated total reflection and using surface plasmons detecting the surface plasmon resonance of nanostructured metals, e.g. localised surface plasmon resonance
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55Specular reflectivity
    • G01N21/552Attenuated total reflection
    • G01N21/553Attenuated total reflection and using surface plasmons
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/41Refractivity; Phase-affecting properties, e.g. optical path length
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65Raman scattering
    • G01N21/658Raman scattering enhancement Raman, e.g. surface plasmons

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  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
CN201510084817.6A 2014-02-17 2015-02-16 分析装置及电子设备 Active CN104849217B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014027823A JP6365817B2 (ja) 2014-02-17 2014-02-17 分析装置、及び電子機器
JP2014-027823 2014-02-17

Publications (2)

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CN104849217A CN104849217A (zh) 2015-08-19
CN104849217B true CN104849217B (zh) 2019-09-24

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US (1) US9389179B2 (https=)
EP (1) EP2908118A1 (https=)
JP (1) JP6365817B2 (https=)
CN (1) CN104849217B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014169955A (ja) 2013-03-05 2014-09-18 Seiko Epson Corp 分析装置、分析方法、これらに用いる光学素子および電子機器、並びに光学素子の設計方法
JP2015152492A (ja) * 2014-02-17 2015-08-24 セイコーエプソン株式会社 分析装置、及び電子機器
JP6365817B2 (ja) 2014-02-17 2018-08-01 セイコーエプソン株式会社 分析装置、及び電子機器
JP6613736B2 (ja) * 2015-09-07 2019-12-04 セイコーエプソン株式会社 物質検出方法および物質検出装置
CN105573010A (zh) * 2016-03-01 2016-05-11 中国科学院半导体研究所 用于表面增强相干反斯托克斯拉曼散射的纳米结构
WO2017221981A1 (ja) * 2016-06-21 2017-12-28 日産化学工業株式会社 ラマン散乱による簡易センシング法
WO2018044240A1 (en) * 2016-09-05 2018-03-08 Agency For Science, Technology And Research A method of forming nano-patterns on a substrate
CN110291429A (zh) * 2017-01-30 2019-09-27 阿尔托大学基金会 等离激元装置
CN114914652B (zh) * 2022-05-30 2024-03-29 西安工业大学 中心金属条溅射ITO薄膜均衡滤波SSPPs传输线及滤波器
CN114883768B (zh) * 2022-05-30 2024-04-02 西安工业大学 矩形波纹金属条溅射ITO薄膜均衡滤波SSPPs传输线及滤波器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005121754A1 (en) * 2004-06-11 2005-12-22 Consejo Superior De Investigaciones Cientificas Device and method for detecting changes in the refractive index of a dielectric medium
CN101688809A (zh) * 2007-06-26 2010-03-31 惠普开发有限公司 电场增强结构及使用其的检测装置
JP2013231682A (ja) * 2012-05-01 2013-11-14 Seiko Epson Corp 光学デバイス及び検出装置
WO2013168401A1 (ja) * 2012-05-10 2013-11-14 セイコーエプソン株式会社 センサーチップ並びにセンサーカートリッジおよび検出装置

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979184A (en) 1975-05-27 1976-09-07 General Electric Company Diagnostic device for visually detecting presence of biological particles
JPS6137581A (ja) 1984-07-31 1986-02-22 Nissan Motor Co Ltd 電動式動力舵取り装置
US7023544B2 (en) 2000-10-30 2006-04-04 Sru Biosystems, Inc. Method and instrument for detecting biomolecular interactions
US7399445B2 (en) * 2002-01-11 2008-07-15 Canon Kabushiki Kaisha Chemical sensor
FR2860872A1 (fr) 2003-10-09 2005-04-15 Commissariat Energie Atomique Micro-capteurs et nano-capteurs d'especes chimiques et biologiques a plasmons de surface
KR101168654B1 (ko) 2004-05-19 2012-07-25 브이피 호울딩 엘엘씨 표면 증강 라만 산란에 의한 화학기의 증강된 검출을 위한 층상의 플라즈몬 구조를 가진 광센서
JP4156567B2 (ja) 2004-06-16 2008-09-24 日本電信電話株式会社 Sprセンサーおよび屈折率測定方法
WO2006130164A2 (en) 2004-08-19 2006-12-07 University Of Pittsburgh Chip-scale optical spectrum analyzers with enhanced resolution
US7956995B2 (en) 2005-01-07 2011-06-07 Kyoto University Optical sensor and method for manufacturing the same
JP2006208057A (ja) * 2005-01-25 2006-08-10 Taiyo Yuden Co Ltd プラズモン共鳴構造体,その制御方法,金属ドメイン製造方法
US7524671B2 (en) * 2005-01-27 2009-04-28 Prescient Medical, Inc. Handheld raman blood analyzer
JP2007024870A (ja) 2005-06-14 2007-02-01 Fujifilm Holdings Corp センサ、センシング装置、及びセンシング方法
CN101203741B (zh) 2005-06-14 2012-01-18 富士胶片株式会社 传感器、多通道传感器、感测设备和感测方法
CA2609023C (en) 2005-08-01 2012-11-27 Canon Kabushiki Kaisha Target substance detecting device, target substance detecting method using the same, and detecting apparatus and kit therefor
JP4878238B2 (ja) 2005-08-01 2012-02-15 キヤノン株式会社 標的物質検出用の素子及びそれを用いた標的物質の検出方法、並びにそのための検出装置及びキット
JP2007286045A (ja) 2006-03-20 2007-11-01 Canon Inc 検出装置、検出素子用基板、検出素子、検出素子用キット及び検出方法
JP2008014933A (ja) 2006-06-08 2008-01-24 Fujifilm Corp ラマン分光用デバイス、及びラマン分光装置
JP5294600B2 (ja) 2007-09-28 2013-09-18 キヤノン株式会社 標的物質検出装置、及び標的物質検出方法
JP5288772B2 (ja) 2007-11-02 2013-09-11 キヤノン株式会社 化学センサ素子、センシング装置およびセンシング方法
JP2009115546A (ja) 2007-11-05 2009-05-28 Fujifilm Corp 分析装置
US8261399B2 (en) 2008-06-25 2012-09-11 Colgate-Palmolive Company Oral care implement with mechanical energy harvesting
US8953159B2 (en) 2008-10-03 2015-02-10 The Board Of Trustees Of The University Of Illinois Surface enhanced raman spectroscopy nanodome biosensors and methods of manufacturing the same
JP5606052B2 (ja) 2009-01-13 2014-10-15 キヤノン株式会社 光学素子
WO2011050272A2 (en) 2009-10-23 2011-04-28 Trustees Of Boston University Nanoantenna arrays for nanospectroscopy, methods of use and methods of high-throughput nanofabrication
US8514398B2 (en) * 2009-11-10 2013-08-20 The Regents Of The University Of California Sensing devices and techniques using 3-D arrays based on surface plasmon excitations
EP2325635B1 (en) 2009-11-19 2017-05-03 Seiko Epson Corporation Sensor chip, sensor cartridge, and analysis apparatus
JP5589656B2 (ja) * 2009-12-11 2014-09-17 セイコーエプソン株式会社 センサーチップ、センサーカートリッジ及び分析装置
EP2372348A1 (en) 2010-03-22 2011-10-05 Imec Methods and systems for surface enhanced optical detection
JP5609241B2 (ja) 2010-04-28 2014-10-22 セイコーエプソン株式会社 分光方法及び分析装置
WO2012011998A2 (en) 2010-04-28 2012-01-26 The Regents Of The University Of California Impedance matching ground plane for high efficiency coupling with optical antennas
JP5640592B2 (ja) 2010-09-14 2014-12-17 セイコーエプソン株式会社 光デバイスユニット及び検出装置
JP5545144B2 (ja) 2010-09-14 2014-07-09 セイコーエプソン株式会社 光デバイスユニット及び検出装置
JP2012063154A (ja) 2010-09-14 2012-03-29 Seiko Epson Corp 検出装置
JP2012132804A (ja) 2010-12-22 2012-07-12 Kyoto Univ 光増強素子
US9671327B2 (en) 2011-03-18 2017-06-06 The Regents Of The University Of Colorado, A Body Corporate Ultrasensitive biochemical sensing device and method of sensing analytes
JP5807373B2 (ja) 2011-04-27 2015-11-10 セイコーエプソン株式会社 検出装置
US9272126B2 (en) 2011-04-29 2016-03-01 The Board Of Trustees Of The University Of Illinois Photonic biosensors incorporated into tubing, methods of manufacture and instruments for analyzing the biosensors
US20120322977A1 (en) 2011-06-20 2012-12-20 Stc.Unm Micropatterned multifunctional inorganic nanoparticle arrays based on patterned peptide constructs
JP5810667B2 (ja) 2011-06-23 2015-11-11 セイコーエプソン株式会社 光デバイス及び検出装置
JP5821511B2 (ja) * 2011-10-17 2015-11-24 セイコーエプソン株式会社 光デバイス及び検出装置
US20140256593A1 (en) * 2011-11-22 2014-09-11 University Of Maryland, Baltimore Plasmonic substrates for metal-enhanced fluorescence based sensing, imaging and assays
JP2013142546A (ja) 2012-01-06 2013-07-22 Panasonic Corp 生体成分の濃度を測定する方法及び測定装置
JP5923992B2 (ja) * 2012-01-18 2016-05-25 セイコーエプソン株式会社 試料分析素子および検出装置
JP5880064B2 (ja) 2012-01-18 2016-03-08 セイコーエプソン株式会社 試料分析素子および検出装置
JP2013221883A (ja) 2012-04-18 2013-10-28 Seiko Epson Corp 試料分析素子および検出装置
JP2013234977A (ja) 2012-05-11 2013-11-21 Seiko Epson Corp 試料分析素子並びに検査装置およびセンサーカートリッジ
JP2014163869A (ja) * 2013-02-27 2014-09-08 Seiko Epson Corp 光学素子、分析装置、分析方法、および電子機器
JP2014163868A (ja) * 2013-02-27 2014-09-08 Seiko Epson Corp 光学素子、分析装置、分析方法、および電子機器
JP2014173920A (ja) * 2013-03-07 2014-09-22 Seiko Epson Corp 分析装置、分析方法、これらに用いる光学素子および電子機器、並びに光学素子の設計方法
JP2015055482A (ja) * 2013-09-10 2015-03-23 セイコーエプソン株式会社 分析装置、分析方法、これらに用いる光学素子及び電子機器
JP6365817B2 (ja) 2014-02-17 2018-08-01 セイコーエプソン株式会社 分析装置、及び電子機器
JP2015152492A (ja) * 2014-02-17 2015-08-24 セイコーエプソン株式会社 分析装置、及び電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005121754A1 (en) * 2004-06-11 2005-12-22 Consejo Superior De Investigaciones Cientificas Device and method for detecting changes in the refractive index of a dielectric medium
CN101688809A (zh) * 2007-06-26 2010-03-31 惠普开发有限公司 电场增强结构及使用其的检测装置
JP2013231682A (ja) * 2012-05-01 2013-11-14 Seiko Epson Corp 光学デバイス及び検出装置
WO2013168401A1 (ja) * 2012-05-10 2013-11-14 セイコーエプソン株式会社 センサーチップ並びにセンサーカートリッジおよび検出装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Double resonance surface enhanced Raman scattering substrates: an intuitive coupled oscillator model;Yizhuo Chu et al.;《Optics Express》;20110801;第19卷(第16期);全文 *

Also Published As

Publication number Publication date
JP2015152493A (ja) 2015-08-24
JP6365817B2 (ja) 2018-08-01
US9389179B2 (en) 2016-07-12
CN104849217A (zh) 2015-08-19
US20150233822A1 (en) 2015-08-20
EP2908118A1 (en) 2015-08-19

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