CN104734635B - 发热体、振动器件、电子设备以及移动体 - Google Patents
发热体、振动器件、电子设备以及移动体 Download PDFInfo
- Publication number
- CN104734635B CN104734635B CN201410766674.2A CN201410766674A CN104734635B CN 104734635 B CN104734635 B CN 104734635B CN 201410766674 A CN201410766674 A CN 201410766674A CN 104734635 B CN104734635 B CN 104734635B
- Authority
- CN
- China
- Prior art keywords
- electrode
- region
- heating element
- semiconductor substrate
- resistance layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000009792 diffusion process Methods 0.000 claims abstract description 133
- 238000010438 heat treatment Methods 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 239000004065 semiconductor Substances 0.000 claims abstract description 58
- 239000012535 impurity Substances 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 5
- 206010037660 Pyrexia Diseases 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 50
- 239000010453 quartz Substances 0.000 description 48
- 239000013078 crystal Substances 0.000 description 29
- 230000010355 oscillation Effects 0.000 description 28
- 230000006870 function Effects 0.000 description 23
- 238000010586 diagram Methods 0.000 description 19
- 230000005484 gravity Effects 0.000 description 12
- 230000020169 heat generation Effects 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000004891 communication Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 235000014676 Phragmites communis Nutrition 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 241000251468 Actinopterygii Species 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 235000015842 Hesperis Nutrition 0.000 description 1
- 235000012633 Iberis amara Nutrition 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/08—Holders with means for regulating temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L1/00—Stabilisation of generator output against variations of physical values, e.g. power supply
- H03L1/02—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only
- H03L1/028—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only of generators comprising piezoelectric resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L1/00—Stabilisation of generator output against variations of physical values, e.g. power supply
- H03L1/02—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only
- H03L1/04—Constructional details for maintaining temperature constant
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Resistance Heating (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013265769A JP6341362B2 (ja) | 2013-12-24 | 2013-12-24 | 発熱体、振動デバイス、電子機器及び移動体 |
| JP2013-265769 | 2013-12-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104734635A CN104734635A (zh) | 2015-06-24 |
| CN104734635B true CN104734635B (zh) | 2019-08-23 |
Family
ID=53401232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410766674.2A Active CN104734635B (zh) | 2013-12-24 | 2014-12-11 | 发热体、振动器件、电子设备以及移动体 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10103708B2 (enExample) |
| JP (1) | JP6341362B2 (enExample) |
| CN (1) | CN104734635B (enExample) |
| TW (1) | TWI652894B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104714325B (zh) * | 2015-03-18 | 2017-09-19 | 深圳市华星光电技术有限公司 | 液晶显示器及其制备方法 |
| JP6740572B2 (ja) * | 2015-07-16 | 2020-08-19 | セイコーエプソン株式会社 | 電子デバイス、電子機器、および基地局装置 |
| JP6665487B2 (ja) * | 2015-11-02 | 2020-03-13 | セイコーエプソン株式会社 | 集積回路装置、電子デバイス、電子機器、および基地局 |
| JP2017139682A (ja) | 2016-02-05 | 2017-08-10 | セイコーエプソン株式会社 | 振動片、振動片の製造方法、発振器、電子機器、移動体、および基地局 |
| JPWO2018003920A1 (ja) * | 2016-06-30 | 2019-02-21 | 日立金属株式会社 | 平面アンテナ、同時焼成セラミック基板および準ミリ波・ミリ波無線通信モジュール |
| JP6866588B2 (ja) * | 2016-08-08 | 2021-04-28 | セイコーエプソン株式会社 | 電子デバイス、電子デバイスの製造方法、電子機器および移動体 |
| JP6873775B2 (ja) | 2017-03-27 | 2021-05-19 | 旭化成エレクトロニクス株式会社 | 温度制御装置および発振装置 |
| CN107241077B (zh) * | 2017-05-12 | 2020-12-29 | 电子科技大学 | 一种压电薄膜体声波谐振器及其制备方法 |
| JP7694069B2 (ja) | 2021-03-11 | 2025-06-18 | セイコーエプソン株式会社 | 集積回路装置及び発振器 |
| JP2022143734A (ja) * | 2021-03-18 | 2022-10-03 | セイコーエプソン株式会社 | 半導体集積回路 |
| EP4611480A1 (en) * | 2024-03-01 | 2025-09-03 | Nicoventures Trading Limited | Aerosol provision device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101895270A (zh) * | 2009-03-09 | 2010-11-24 | 微晶公司 | 包括热控压电谐振器的振荡器装置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1153497A (en) * | 1966-07-25 | 1969-05-29 | Associated Semiconductor Mft | Improvements in and relating to Semiconductor Devices |
| JPS62156850A (ja) * | 1985-12-28 | 1987-07-11 | Nec Corp | 半導体装置 |
| JPH05307045A (ja) * | 1991-11-18 | 1993-11-19 | Terumo Corp | 流速センサ |
| JPH08279649A (ja) * | 1995-04-05 | 1996-10-22 | Mitsubishi Electric Corp | 半導体レーザの製造方法，及び半導体レーザ |
| JPH09196682A (ja) * | 1996-01-19 | 1997-07-31 | Matsushita Electric Ind Co Ltd | 角速度センサと加速度センサ |
| JPH1141032A (ja) | 1997-07-23 | 1999-02-12 | Chuniti Denki Kogyo Kk | 水晶発振子の温度制御装置 |
| JP3248882B2 (ja) | 1998-12-28 | 2002-01-21 | 東洋通信機株式会社 | 高安定圧電発振器の構造 |
| JP3793555B2 (ja) | 1999-05-31 | 2006-07-05 | 京セラ株式会社 | 円盤状ヒータ |
| JP4483138B2 (ja) | 2001-02-09 | 2010-06-16 | エプソントヨコム株式会社 | 高安定圧電発振器の構造 |
| JP3822092B2 (ja) * | 2001-10-30 | 2006-09-13 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| JP2005310494A (ja) | 2004-04-20 | 2005-11-04 | Harison Toshiba Lighting Corp | ヒータ、加熱装置、画像形成装置 |
| JP4354347B2 (ja) | 2004-06-29 | 2009-10-28 | 日本電波工業株式会社 | 水晶発振器 |
| JP2006153511A (ja) * | 2004-11-25 | 2006-06-15 | Matsushita Electric Works Ltd | 湿度センサ |
| JP4804813B2 (ja) | 2005-06-24 | 2011-11-02 | 日本電波工業株式会社 | 圧電発振器 |
| TW200744314A (en) | 2006-05-18 | 2007-12-01 | Taitien Electronics Co Ltd | Oscillator device capable of keeping constant temperature |
| JP5072396B2 (ja) * | 2006-06-12 | 2012-11-14 | 株式会社リコー | 抵抗素子調整方法、抵抗素子調整方法によって抵抗値及び温度依存特性が調整された抵抗素子、その抵抗素子を用いた電流発生装置 |
| JP4641294B2 (ja) * | 2006-08-29 | 2011-03-02 | 日本電波工業株式会社 | 恒温槽型水晶発振器 |
| JP5331610B2 (ja) * | 2008-12-03 | 2013-10-30 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
| US10033154B2 (en) * | 2010-03-03 | 2018-07-24 | Furukawa Electronic Co., Ltd. | Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element |
-
2013
- 2013-12-24 JP JP2013265769A patent/JP6341362B2/ja active Active
-
2014
- 2014-12-11 CN CN201410766674.2A patent/CN104734635B/zh active Active
- 2014-12-18 US US14/575,249 patent/US10103708B2/en active Active
- 2014-12-19 TW TW103144620A patent/TWI652894B/zh active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101895270A (zh) * | 2009-03-09 | 2010-11-24 | 微晶公司 | 包括热控压电谐振器的振荡器装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US10103708B2 (en) | 2018-10-16 |
| JP2015122426A (ja) | 2015-07-02 |
| US20150180444A1 (en) | 2015-06-25 |
| CN104734635A (zh) | 2015-06-24 |
| TW201528679A (zh) | 2015-07-16 |
| TWI652894B (zh) | 2019-03-01 |
| JP6341362B2 (ja) | 2018-06-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104734635B (zh) | 发热体、振动器件、电子设备以及移动体 | |
| TWI660470B (zh) | 發熱體、振動裝置、電子機器及移動體 | |
| US8754718B2 (en) | Piezoelectric device and electronic apparatus | |
| CN104953978B (zh) | 电子部件、电子设备以及移动体 | |
| US10491156B2 (en) | Circuit device, oscillator, electronic apparatus, and vehicle | |
| CN107231148B (zh) | 振荡器、电子设备以及移动体 | |
| CN111614321B (zh) | 振荡器、电子设备和移动体 | |
| USRE50208E1 (en) | Buffer circuit, semiconductor integrated circuit device, oscillator, electronic apparatus, and base station | |
| US20150280101A1 (en) | Electronic component, electronic apparatus, and moving object | |
| CN107070407B (zh) | 集成电路装置、电子器件、电子设备及基站 | |
| JP6790705B2 (ja) | 回路装置、発振器、電子機器及び移動体 | |
| JP2014204140A (ja) | 振動デバイス、電子機器、移動体 | |
| CN104079253A (zh) | 振动器件、振动器件的制造方法、电子设备、移动体 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |