CN104733323A - 一种低温多晶硅薄膜晶体管的制造方法 - Google Patents

一种低温多晶硅薄膜晶体管的制造方法 Download PDF

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CN104733323A
CN104733323A CN201410784059.4A CN201410784059A CN104733323A CN 104733323 A CN104733323 A CN 104733323A CN 201410784059 A CN201410784059 A CN 201410784059A CN 104733323 A CN104733323 A CN 104733323A
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photoresist
polysilicon
photoresist layer
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CN104733323B (zh
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陈归
薛景峰
张鑫
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明公开一种低温多晶硅薄膜晶体管的制造方法，包括：提供一基板(22)；在所述基板(22)上形成缓冲层(24)；在所述缓冲层(24)上同时形成多晶硅层(26)及光阻层(28)，对所述源极区(262)及所述漏极区(264)进行离子注入，将所述光阻层(28)去除；在所述多晶硅层(26)上形成绝缘层(32)；在所述绝缘层(32)上形成栅电极(34)；在所述绝缘层(32)上形成钝化层(36)，其中，所述钝化层(36)覆盖所述栅电极(34)。本发明仅采用一次光罩工艺及一次离子注入工艺完成对多晶硅层的制作处理，简化了工艺，因此减少工艺制程成本，且利于提高生产效率。

Description

一种低温多晶硅薄膜晶体管的制造方法
技术领域
本发明涉及一种低温多晶硅(Lower Temperature Polycrystal Silicon，LTPS)薄膜晶体管(Thin Film Transistor，TFT)的制造方法。
背景技术
随着光电与半导体技术的演进，也带动了平板显示器(Flat Panel Display)的蓬勃发展，而在诸多平板显示器中，液晶显示器(Liquid Crystal Display，简称LCD)因具有高空间利用效率、低消耗功率、无辐射以及低电磁干扰等诸多优越特性，已成为市场的主流。
目前，作为LCD的开关元件而广泛采用的是非晶硅薄膜三极管(a-Si TFT)，但a-Si TFT LCD在满足薄型、轻量、高精细度、高亮度、高可靠性、低功耗等要求仍受到限制。低温多晶硅(lower temperature polycrystal silicon，LTPS)TFT LCD与a-Si TFT LCD相比，在满足上述要求方面，具有明显优势。
首先，请参照图1A，提供一基板10；接着，在基板10上形成一多晶硅(LTPS)层12，其中，例如以溅射工序在基板10上形成一非晶硅(a-Si)层，然后进行退货工序，以使该非晶硅层再结晶形成多晶硅，最后对该多晶硅进行曝光显影后形成多晶硅层12。
接着，请参照图1B，在多晶硅层12上覆盖绝缘层14；接着，在绝缘层14上形成栅电极16；接着，在绝缘层14上形成一光阻层18，其中，该光阻层18覆盖栅电极16并位于多晶硅层12的中间区域上方，例如以利用旋涂方式在绝缘层14表面形成光阻材料，再以曝光显影的方式，留下一定厚度的光阻材料覆盖栅电极16并位于多晶硅层12的中间区域上方，去除其余位置的光阻材料；接着，利用离子注入工序向多晶硅层12的两侧区域122、124注入离子。
接着，请参照图1C，将光阻层18去除，例如以曝光显影的方式将光阻层18去除；接着，再次利用离子注入工序向多晶硅层12的通道区域121的两侧区域注入离子，以使区域122、124形成重掺杂区域，区域126、128形成轻掺杂区域，其中，区域122与区域126组成源极区域，而区域124与区域128组成漏极区域；接着，在绝缘层14上形成一钝化层20，其中，钝化层20覆盖绝缘 层14及栅电极16。
由上可知，在传统的LTPS TFT制程中，针对多晶硅层12的制作，需要采用三次光罩工艺及两次离子注入工艺，工艺复杂，因此增加工艺制程成本，且不利于提高生产效率。
发明内容
为了解决上述现有技术存在的问题，本发明的目的在于提供一种低温多晶硅薄膜晶体管的制造方法，包括：提供一基板；在所述基板上形成缓冲层；在所述缓冲层上同时形成多晶硅层及光阻层，其中，所述多晶硅层包括源极区、漏极区以及通道区，所述源极区远离所述通道区的部分区上的光阻层厚度、所述源极区靠近所述通道区的部分区上的光阻层厚度及所述通道区上的光阻层厚度依次增大，所述漏极区远离所述通道区的部分区上的光阻层厚度、所述漏极区靠近所述通道区的部分区上的光阻层厚度及所述通道区上的光阻层厚度依次增大；对所述源极区及所述漏极区进行离子注入，以使所述源极区和所述漏极区分别形成源电极和漏电极，其中，所述源极区远离所述通道区的部分为源极重掺杂区，所述源极区靠近所述通道区的部分区为源极轻掺杂区，所述漏极区远离所述通道区的部分区为漏极重掺杂区，所述漏极区靠近所述通道区的部分区为漏极轻掺杂区；将所述光阻层去除；在所述多晶硅层上形成绝缘层；在所述绝缘层上形成栅电极；在所述绝缘层上形成钝化层，其中，所述钝化层覆盖所述栅电极。
进一步地，同时形成所述多晶硅层及所述光阻层是在所述缓冲层表面形成多晶硅，再利用旋涂方式在所述多晶硅表面形成光阻材料，再利用预定光罩对所述光阻材料进行曝光，再对经曝光后的光阻材料进行显影，留下多晶硅及光阻材料在形成所述多晶硅层及所述光阻层的区域中，并去除其余位置的多晶硅及光阻材料，其中，所述预定光罩相对所述通道区的区域的透光率、所述预定光罩相对所述源极轻掺杂区的区域的透光率以及所述预定光罩相对所述源极重掺杂区的区域的透光率依次增大，所述预定光罩相对所述通道区的区域的透光率、所述预定光罩相对所述漏极轻掺杂区的区域的透光率以及所述预定光罩相对所述漏极重掺杂区的区域的透光率依次增大。
进一步地，同时形成所述多晶硅层及所述光阻层是在所述缓冲层表面形成多晶硅，再利用旋涂方式在所述多晶硅表面形成光阻材料，再利用预定光罩对所述光阻材料进行曝光，再对经曝光后的光阻材料进行显影，留下多晶硅及光 阻材料在形成所述多晶硅层及所述光阻层的区域中，并去除其余位置的多晶硅及光阻材料，其中，所述预定光罩相对所述通道区的区域的透光率、所述预定光罩相对所述源极轻掺杂区的区域的透光率以及所述预定光罩相对所述源极重掺杂区的区域的透光率依次减小，所述预定光罩相对所述通道区的区域的透光率、所述预定光罩相对所述漏极轻掺杂区的区域的透光率以及所述预定光罩相对所述漏极重掺杂区的区域的透光率依次减小。
进一步地，形成所述多晶硅是以溅射方式在所述缓冲层表面形成一非晶硅层，再以退火方式使所述非晶硅层再结晶。
进一步地，所述预定光罩为半色调光罩或者灰阶光罩。
进一步地，所述光阻层的材料为正性光阻材料。
进一步地，所述光阻层的材料为负性光阻材料。
进一步地，所述源极重掺杂区上的光阻层厚度与所述漏极重掺杂区上的光阻层厚度相同，所述源极轻掺杂区上的光阻层厚度与所述漏极轻掺杂区上的光阻层厚度相同。
本发明仅采用一次光罩工艺及一次离子注入工艺完成对多晶硅层的制作处理，简化了工艺，因此减少工艺制程成本，且利于提高生产效率。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1A至图1C是现有的低温多晶硅薄膜晶体管的制造方法的示意图；
图2A至图2D是根据本发明的实施例的低温多晶硅薄膜晶体管的制造方法的示意图；
图3是根据本发明的另一实施例的同时形成多晶硅层及光阻层的示意图；
图4是根据本发明的又一实施例的同时形成多晶硅层及光阻层的示意图；
图5是根据本发明的又一实施例的同时形成多晶硅层及光阻层的示意图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的 形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。在附图中，相同的标号将始终被用于表示相同的元件。
图2A至图2D是根据本发明的实施例的低温多晶硅薄膜晶体管的制造方法的示意图。
首先，请参照图2A，提供一基板22，例如为一绝缘的玻璃基板或石英基板；接着，在基板22上形成一缓冲层24，例如通过PECVD工艺在基板22上形成的二氧化硅(SiO2)。
接着，请参照图2B，在缓冲层24上同时形成多晶硅层26及光阻层28。同时形成多晶硅层26及光阻层28是在缓冲层24表面形成多晶硅，再利用旋涂方式在多晶硅表面形成光阻材料，再利用半色调光罩30对光阻材料进行曝光，再对经曝光后的光阻材料进行显影，留下多晶硅及光阻材料在形成多晶硅层26及光阻层28的区域中，并去除其余位置的多晶硅及光阻材料。形成多晶硅是以溅射方式在缓冲层24表面形成一非晶硅(a-Si)层，再以退火方式使非晶硅层再结晶。
在本实施例中，多晶硅层26包括源极区262、漏极区264以及通道区266，源极区262远离通道区266的部分区2621上的光阻层28的厚度、源极区262靠近通道区266的部分区2622上的光阻层28的厚度及通道区266上的光阻层28的厚度依次增大，漏极区264远离通道区266的部分区2641上的光阻层28的厚度、漏极区264靠近通道区266的部分区2642上的光阻层28的厚度及通道区266上的光阻层28的厚度依次增大。
接着，请参照图2C，对源极区262及漏极区264进行离子注入，以使源极区262和漏极区264分别形成源电极和漏电极，其中，源极区262远离通道区266的部分区2621为源极重掺杂区，源极区262靠近通道区266的部分区2622为源极轻掺杂区，漏极区264远离通道区266的部分区2641为漏极重掺杂区，漏极区264靠近通道区266的部分区2642为漏极轻掺杂区。
一并参照图2B和图2C，光阻层28由正性感光材料形成。为了使光阻层28形成上述结构，对应的，半色调光罩30相对通道区266的区域的透光率、半色调光罩30相对源极轻掺杂区2622的区域的透光率以及半色调光罩30相对源极重掺杂区2621的区域的透光率依次增大，而半色调光罩30相对通道区266的 区域的透光率、半色调光罩30相对漏极轻掺杂区2642的区域的透光率以及半色调光罩30相对漏极重掺杂区2641的区域的透光率依次增大。光阻材料经半色调光罩30不同区域透过的光进行曝光，再进行显影后而形成上述的光阻层28。
优选的，源极重掺杂区2621上的光阻层28的厚度与漏极重掺杂区2641上的光阻层28的厚度相同，源极轻掺杂区2622上的光阻层28的厚度与漏极轻掺杂区2642上的光阻层28的厚度相同。对应的，半色调光罩30相对源极轻掺杂区2622的区域的透光率与半色调光罩30相对漏极轻掺杂区2642的区域的透光率相同，半色调光罩30相对源极重掺杂区2621的区域的透光率与半色调光罩30相对漏极重掺杂区2641的区域的透光率相同。
接着，请参照图2D，将光阻层28去除，例如通过曝光显影方式将光阻层28去除；接着，在多晶硅层26上形成绝缘层32，例如通过PECVD工艺在多晶硅层26上形成的二氧化硅(SiO2)或氮化硅(SiNx)；接着，在绝缘层32上形成栅电极34，该栅电极34的材料可为金属铬或者金属钨或者二者的合金等；接着，在绝缘层32上形成钝化层36，其中，该钝化层36覆盖栅电极34，该钝化层36可例如是通过PECVD工艺在绝缘层32上形成的二氧化硅(SiO2)或氮化硅(SiNx)。
图3是根据本发明的另一实施例的同时形成多晶硅层及光阻层的示意图。
在图3所示的另一实施例中，仅与图2B所示的同时形成多晶硅层及光阻层的方法有区别，其余方法均相同，因此二者相同之处在此不再赘述。
请参照图3，在缓冲层24上同时形成多晶硅层26及光阻层28。同时形成多晶硅层26及光阻层28是在缓冲层24表面形成多晶硅，再利用旋涂方式在多晶硅表面形成光阻材料，再利用灰阶光罩38对光阻材料进行曝光，再对经曝光后的光阻材料进行显影，留下多晶硅及光阻材料在形成多晶硅层26及光阻层28的区域中，并去除其余位置的多晶硅及光阻材料。形成多晶硅是以溅射方式在缓冲层24表面形成一非晶硅(a-Si)层，再以退火方式使非晶硅层再结晶。
光阻层28由正性感光材料形成。为了使光阻层28形成上述结构，对应的，灰阶光罩38相对通道区266的区域的透光率(即狭缝密度)、灰阶光罩38相对源极轻掺杂区2622的区域的透光率以及灰阶光罩38相对源极重掺杂区2621的区域的透光率依次增大，而灰阶光罩38相对通道区266的区域的透光率、灰阶光罩38相对漏极轻掺杂区2642的区域的透光率以及灰阶光罩38相对漏极重掺杂区2641的区域的透光率依次增大。光阻材料经灰阶光罩38不同区域透过的 光进行曝光，再进行显影后而形成上述的光阻层28。
图4是根据本发明的又一实施例的同时形成多晶硅层及光阻层的示意图。
在图4所示的又一实施例中，仅与图2B所示的同时形成多晶硅层及光阻层的方法有区别，其余方法均相同，因此二者相同之处在此不再赘述。
请参照图4，光阻层28由负性感光材料形成。为了使光阻层28形成上述结构，对应的，半色调光罩40相对通道区266的区域的透光率、半色调光罩40相对源极轻掺杂区2622的区域的透光率以及半色调光罩40相对源极重掺杂区2621的区域的透光率依次减小，而半色调光罩40相对通道区266的区域的透光率、半色调光罩40相对漏极轻掺杂区2642的区域的透光率以及半色调光罩40相对漏极重掺杂区2641的区域的透光率依次减小。光阻材料经半色调光罩40不同区域透过的光进行曝光，再进行显影后而形成上述的光阻层28。
图5是根据本发明的又一实施例的同时形成多晶硅层及光阻层的示意图。
在图5所示的又一实施例中，仅与图2B所示的同时形成多晶硅层及光阻层的方法有区别，其余方法均相同，因此二者相同之处在此不再赘述。
请参照图5，光阻层28由负性感光材料形成。为了使光阻层28形成上述结构，对应的，灰阶光罩42相对通道区266的区域的透光率(狭缝密度)、灰阶光罩42相对源极轻掺杂区2622的区域的透光率以及灰阶光罩42相对源极重掺杂区2621的区域的透光率依次减小，而灰阶光罩42相对通道区266的区域的透光率、灰阶光罩42相对漏极轻掺杂区2642的区域的透光率以及灰阶光罩42相对漏极重掺杂区2641的区域的透光率依次减小。光阻材料经灰阶光罩42不同区域透过的光进行曝光，再进行显影后而形成上述的光阻层28。
综上，本发明仅采用一次光罩工艺及一次离子注入工艺完成对多晶硅层的制作处理，简化了工艺，因此减少工艺制程成本，且利于提高生产效率。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (10)

1.一种低温多晶硅薄膜晶体管的制造方法，其特征在于，包括：
提供一基板(22)；
在所述基板(22)上形成缓冲层(24)；
在所述缓冲层(24)上同时形成多晶硅层(26)及光阻层(28)，其中，所述多晶硅层(26)包括源极区(262)、漏极区(264)以及通道区(266)，所述源极区(262)远离所述通道区(266)的部分区上的光阻层(28)的厚度、所述源极区(262)靠近所述通道区(266)的部分区上的光阻层(28)的厚度及所述通道区(266)上的光阻层(28)的厚度依次增大，所述漏极区(264)远离所述通道区(266)的部分区上的光阻层(28)的厚度、所述漏极区(264)靠近所述通道区(266)的部分区上的光阻层(28)的厚度及所述通道区(266)上的光阻层(28)的厚度依次增大；
对所述源极区(262)及所述漏极区(264)进行离子注入，以使所述源极区(262)和所述漏极区(264)分别形成源电极和漏电极，其中，所述源极区(262)远离所述通道区(266)的部分为源极重掺杂区(2621)，所述源极区(262)靠近所述通道区(266)的部分区为源极轻掺杂区(2622)，所述漏极区(264)远离所述通道区(266)的部分区为漏极重掺杂区(2641)，所述漏极区(264)靠近所述通道区(266)的部分区为漏极轻掺杂区(2642)；
将所述光阻层(28)去除；
在所述多晶硅层(26)上形成绝缘层(32)；
在所述绝缘层(32)上形成栅电极(34)；
在所述绝缘层(32)上形成钝化层(36)，其中，所述钝化层(36)覆盖所述栅电极(34)。
2.根据权利要求1所述的制造方法，其特征在于，同时形成所述多晶硅层(26)及所述光阻层(28)是在所述缓冲层(24)表面形成多晶硅，再利用旋涂方式在所述多晶硅表面形成光阻材料，再利用预定光罩对所述光阻材料进行曝光，再对经曝光后的光阻材料进行显影，留下多晶硅及光阻材料在形成所述多晶硅层(26)及所述光阻层(28)的区域中，并去除其余位置的多晶硅及光阻材料，
其中，所述预定光罩相对所述通道区(266)的区域的透光率、所述预定光罩相对所述源极轻掺杂区(2622)的区域的透光率以及所述预定光罩相对所述源极重掺杂区(2621)的区域的透光率依次增大，所述预定光罩相对所述通道区(266)的区域的透光率、所述预定光罩相对所述漏极轻掺杂区(2642)的区域的透光率以及所述预定光罩相对所述漏极重掺杂区(2641)的区域的透光率依次增大。
3.根据权利要求1所述的制造方法，其特征在于，同时形成所述多晶硅层(26)及所述光阻层(28)是在所述缓冲层(24)表面形成多晶硅，再利用旋涂方式在所述多晶硅表面形成光阻材料，再利用预定光罩对所述光阻材料进行曝光，再对经曝光后的光阻材料进行显影，留下多晶硅及光阻材料在形成所述多晶硅层(26)及所述光阻层(28)的区域中，并去除其余位置的多晶硅及光阻材料，
其中，所述预定光罩相对所述通道区(266)的区域的透光率、所述预定光罩相对所述源极轻掺杂区(2622)的区域的透光率以及所述预定光罩相对所述源极重掺杂区(2621)的区域的透光率依次减小，所述预定光罩相对所述通道区(266)的区域的透光率、所述预定光罩相对所述漏极轻掺杂区(2642)的区域的透光率以及所述预定光罩相对所述漏极重掺杂区(2641)的区域的透光率依次减小。
4.根据权利要求2所述的制造方法，其特征在于，形成所述多晶硅是以溅射方式在所述缓冲层(24)表面形成一非晶硅层，再以退火方式使所述非晶硅层再结晶。
5.根据权利要求2或4所述的制造方法，其特征在于，所述预定光罩为半色调光罩或者灰阶光罩。
6.根据权利要求3所述的制造方法，其特征在于，形成所述多晶硅是以溅射方式在所述缓冲层(24)表面形成一非晶硅层，再以退火方式使所述非晶硅层再结晶。
7.根据权利要求3或6所述的制造方法，其特征在于，所述预定光罩为半色调光罩或者灰阶光罩。
8.根据权利要求5所述的制造方法，其特征在于，所述光阻层(28)的材料为正性光阻材料。
9.根据权利要求7所述的制造方法，其特征在于，所述光阻层(28)的材料为负性光阻材料。
10.根据权利要求1所述的制造方法，其特征在于，所述源极重掺杂区(2621)上的光阻层(28)的厚度与所述漏极重掺杂区(2641)上的光阻层(28)的厚度相同，所述源极轻掺杂区(2622)上的光阻层(28)的厚度与所述漏极轻掺杂区(2642)上的光阻层(28)的厚度相同。
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