CN104617013B - 高效率高准确度加热器驱动器 - Google Patents

高效率高准确度加热器驱动器 Download PDF

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Publication number
CN104617013B
CN104617013B CN201410718136.6A CN201410718136A CN104617013B CN 104617013 B CN104617013 B CN 104617013B CN 201410718136 A CN201410718136 A CN 201410718136A CN 104617013 B CN104617013 B CN 104617013B
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CN
China
Prior art keywords
switch
temperature
control signal
power
rapid thermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201410718136.6A
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English (en)
Chinese (zh)
Other versions
CN104617013A (zh
Inventor
亚历山大·戈尔丁
欧勒格·V·塞雷布里安诺夫
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Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN104617013A publication Critical patent/CN104617013A/zh
Application granted granted Critical
Publication of CN104617013B publication Critical patent/CN104617013B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24C—DOMESTIC STOVES OR RANGES ; DETAILS OF DOMESTIC STOVES OR RANGES, OF GENERAL APPLICATION
    • F24C15/00—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24C—DOMESTIC STOVES OR RANGES ; DETAILS OF DOMESTIC STOVES OR RANGES, OF GENERAL APPLICATION
    • F24C15/00—Details
    • F24C15/24—Radiant bodies or panels for radiation heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Mechanical Engineering (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Control Of Resistance Heating (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)
  • Control Of Electrical Variables (AREA)
  • Control Of Temperature (AREA)
CN201410718136.6A 2010-02-19 2011-02-18 高效率高准确度加热器驱动器 Expired - Fee Related CN104617013B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/708,648 US8548312B2 (en) 2010-02-19 2010-02-19 High efficiency high accuracy heater driver
US12/708,648 2010-02-19
CN201180009496.3A CN102763201B (zh) 2010-02-19 2011-02-18 高效率高准确度加热器驱动器

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201180009496.3A Division CN102763201B (zh) 2010-02-19 2011-02-18 高效率高准确度加热器驱动器

Publications (2)

Publication Number Publication Date
CN104617013A CN104617013A (zh) 2015-05-13
CN104617013B true CN104617013B (zh) 2017-11-14

Family

ID=44476555

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201180009496.3A Expired - Fee Related CN102763201B (zh) 2010-02-19 2011-02-18 高效率高准确度加热器驱动器
CN201410718136.6A Expired - Fee Related CN104617013B (zh) 2010-02-19 2011-02-18 高效率高准确度加热器驱动器

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201180009496.3A Expired - Fee Related CN102763201B (zh) 2010-02-19 2011-02-18 高效率高准确度加热器驱动器

Country Status (8)

Country Link
US (3) US8548312B2 (enExample)
EP (1) EP2537178A4 (enExample)
JP (3) JP5887282B2 (enExample)
KR (2) KR101824234B1 (enExample)
CN (2) CN102763201B (enExample)
SG (1) SG183187A1 (enExample)
TW (2) TWI590333B (enExample)
WO (1) WO2011103391A2 (enExample)

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* Cited by examiner, † Cited by third party
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US10734257B2 (en) * 2012-04-25 2020-08-04 Applied Materials, Inc. Direct current lamp driver for substrate processing
US9734659B2 (en) * 2014-08-06 2017-08-15 Mido Play Inc. Single platform system for multiple jurisdiction lotteries and social media
TWI691233B (zh) 2015-01-05 2020-04-11 美商應用材料股份有限公司 用於低壓環境的燈驅動器
TWI612259B (zh) * 2016-02-26 2018-01-21 財團法人工業技術研究院 加熱設備以及加熱方法
US10908195B2 (en) 2016-06-15 2021-02-02 Watlow Electric Manufacturing Company System and method for controlling power to a heater
WO2017218791A1 (en) * 2016-06-15 2017-12-21 Watlow Electric Manufacturing Company Power converter for a thermal system
TWI720330B (zh) * 2017-08-10 2021-03-01 美商瓦特洛威電子製造公司 控制送至加熱器之電力的系統及方法
CN109429382A (zh) * 2017-08-24 2019-03-05 江苏威能电气有限公司 快速升降温加热器
DE102018203945B4 (de) 2018-03-15 2023-08-10 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben
CN110554717B (zh) * 2019-08-15 2021-08-24 国电南瑞科技股份有限公司 适用于电力电子装置温度闭环调节的散热风扇设速方法
CN113405323A (zh) * 2021-07-21 2021-09-17 东方凯特瑞(成都)环保科技有限公司 一种用于蜂窝scr脱硝催化剂的微波干燥方法及装置
CN114060892B (zh) * 2021-11-29 2023-05-16 奥普家居股份有限公司 一种恒温浴霸及其控制方法、存储介质

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US4438356A (en) 1982-03-24 1984-03-20 International Rectifier Corporation Solid state relay circuit employing MOSFET power switching devices
JPH0327408A (ja) * 1989-06-24 1991-02-05 Matsushita Electric Works Ltd デユーテイ制御装置
JP3215613B2 (ja) * 1995-10-04 2001-10-09 古河電池株式会社 力率制御回路
US5751896A (en) 1996-02-22 1998-05-12 Micron Technology, Inc. Method and apparatus to compensate for non-uniform film growth during chemical vapor deposition
US5841110A (en) 1997-08-27 1998-11-24 Steag-Ast Gmbh Method and apparatus for improved temperature control in rapid thermal processing (RTP) systems
JP3304894B2 (ja) * 1998-09-28 2002-07-22 ウシオ電機株式会社 フィラメントランプ点灯装置
JP2000235886A (ja) 1998-12-14 2000-08-29 Tokyo Electron Ltd 加熱手段の温度制御装置および温度制御方法
JP3988338B2 (ja) 1999-10-07 2007-10-10 ウシオ電機株式会社 光照射式急速加熱処理装置の制御装置
US6259072B1 (en) 1999-11-09 2001-07-10 Axcelis Technologies, Inc. Zone controlled radiant heating system utilizing focused reflector
KR100432135B1 (ko) * 2001-06-30 2004-05-17 동부전자 주식회사 급속 열처리 장치
US20030029859A1 (en) * 2001-08-08 2003-02-13 Applied Materials, Inc. Lamphead for a rapid thermal processing chamber
US20080090309A1 (en) 2003-10-27 2008-04-17 Ranish Joseph M Controlled annealing method
US20060000551A1 (en) * 2004-06-30 2006-01-05 Saldana Miguel A Methods and apparatus for optimal temperature control in a plasma processing system
US7283734B2 (en) 2004-08-24 2007-10-16 Fujitsu Limited Rapid thermal processing apparatus and method of manufacture of semiconductor device
CN102122892B (zh) * 2005-04-04 2014-02-12 株式会社国际电气半导体技术服务 供给功率调节器和半导体制造装置
JP2007095889A (ja) 2005-09-28 2007-04-12 Ushio Inc 光照射式加熱方法
JP4687393B2 (ja) * 2005-11-01 2011-05-25 日本放送協会 調光器
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JP5282409B2 (ja) 2008-02-25 2013-09-04 ウシオ電機株式会社 光照射式加熱方法及び光照射式加熱装置
CN102084471B (zh) * 2008-07-07 2012-11-28 朗姆研究公司 用于检测等离子体处理室中的等离子体不稳定的无源电容耦合静电(cce)探针装置

Also Published As

Publication number Publication date
KR20120137367A (ko) 2012-12-20
TWI474403B (zh) 2015-02-21
JP2013520801A (ja) 2013-06-06
US9612020B2 (en) 2017-04-04
CN104617013A (zh) 2015-05-13
KR101824234B1 (ko) 2018-01-31
WO2011103391A2 (en) 2011-08-25
KR20180014208A (ko) 2018-02-07
TW201145395A (en) 2011-12-16
US8548312B2 (en) 2013-10-01
TWI590333B (zh) 2017-07-01
US20110206358A1 (en) 2011-08-25
US20140027440A1 (en) 2014-01-30
KR101890155B1 (ko) 2018-08-21
JP2018093210A (ja) 2018-06-14
EP2537178A4 (en) 2013-07-17
US20170162408A1 (en) 2017-06-08
CN102763201A (zh) 2012-10-31
TW201517176A (zh) 2015-05-01
CN102763201B (zh) 2015-07-15
JP2016076708A (ja) 2016-05-12
WO2011103391A3 (en) 2012-02-09
JP6324938B2 (ja) 2018-05-16
JP5887282B2 (ja) 2016-03-16
EP2537178A2 (en) 2012-12-26
SG183187A1 (en) 2012-09-27

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Granted publication date: 20171114

Termination date: 20200218