CN104576599B - 半导体结构 - Google Patents

半导体结构 Download PDF

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Publication number
CN104576599B
CN104576599B CN201410454274.8A CN201410454274A CN104576599B CN 104576599 B CN104576599 B CN 104576599B CN 201410454274 A CN201410454274 A CN 201410454274A CN 104576599 B CN104576599 B CN 104576599B
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Prior art keywords
layer
passive device
passivation layer
semiconductor structure
diaphragm
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CN104576599A (zh
Inventor
林子闳
洪建州
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MediaTek Inc
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MediaTek Inc
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Abstract

本发明公开一种半导体结构。半导体结构包括：基底；第一钝化层，设置于所述基底上；导电垫，设置于所述第一钝化层上；第二钝化层，设置于所述第一钝化层上；被动元件，设置于所述导电垫上，并穿过所述第二钝化层；以及有机可焊性保护膜，覆盖所述被动元件。本发明所公开的半导体结构，有机可焊性保护膜可以防止表面效应的发生，此外，能够减小电阻并具有较高的品质因数。

Description

半导体结构
技术领域
本发明有关于半导体结构，特别是有关于一种半导体结构的被动元件(passivedevice)的保护层。
背景技术
对于传统的覆晶封装，电感器的一个标准是低电阻，以获得高品质因数(qualityfactor)。电感器的品质因数是指定频率下的感抗(inductive reactance)与电阻的比值，并可作为电感器效率的估量。电感器的品质因数越高，就越接近理想的、无损的电感器的运转情况。
传统封装的制造过程通常会使用镍(Ni)/金(Au)层作为电感器的保护层。镍/金保护层能够保护电感器以不被氧化。然而，镍/金保护层可能导致电感器的表面效应(skineffect)。并且镍/金保护层通常具有较厚的厚度。电感器表面的厚的镍/金保护层会降低电感器的质量因数以及恶化电阻。
因此，有必要寻求一种新的具有较高质量因数的电感器。
发明内容
有鉴于此，本发明提供一种半导体结构。
依据本发明一实施方式，提供一种半导体结构，包括：基底；第一钝化层，设置于所述基底上；导电垫，设置于所述第一钝化层上；第二钝化层，设置于所述第一钝化层上；被动元件，设置于所述导电垫上，并穿过所述第二钝化层；以及有机可焊性保护膜，覆盖所述被动元件。
依据本发明另一实施方式，提供一种半导体结构，包括：基底；导电垫，设置于所述基底上；被动元件，设置于所述导电垫上；以及凸块下金属层和有机可焊性保护膜，所述有机可焊性保护膜覆盖所述被动元件，所述被动元件通过所述凸块下金属层电连接至所述导电垫。
依据本发明又一实施方式，提供一种半导体结构，包括：基底；导电结构，设置于所述基底上；以及有机可焊性保护膜，覆盖所述导电结构的至少一部分。
本发明所提供的半导体结构，其中的有机可焊性保护膜可以防止表面效应的发生，此外，能够减小电阻并具有较高的品质因数。
对于已经阅读后续由各附图及内容所显示的较佳实施方式的本领域的技术人员来说，本发明的各目的是明显的。
附图说明
图1-5为制造本发明的半导体结构的一实施例的剖视图。
图6-8为制造本发明的半导体结构的另一实施例的剖视图。
具体实施方式
在权利要求书及说明书中使用了某些词汇来指称特定的组件。所属领域中的技术人员应可理解，硬件制造商可能会用不同的名词来称呼同样的组件。本权利要求书及说明书并不以名称的差异来作为区分组件的方式，而是以组件在功能上的差异来作为区分的准则。在权利要求书及说明书中所提及的「包括」为开放式的用语，故应解释成「包括但不限定于」。另外，「耦接」一词在此包括任何直接及间接的电气连接手段。因此，若文中描述第一装置耦接于第二装置，则代表所述第一装置可直接电连接于所述第二装置，或通过其他装置或连接手段间接地电连接至所述第二装置。以下描述为本发明实施的较佳实施例。以下实施例仅用来举例阐释本发明的技术特征，并非用来限制本发明的范畴。本发明保护范围当视权利要求书所界定为准。
下面将通过特定的实施例结合相应的附图来描述本发明，但本发明并不限于此。附图的描述仅用于理解本发明的方案，并非用于限制本发明。为了说明的目的，在附图中的一些元件的尺寸可能会放大，而且并非按照实际比例来绘制。附图中的尺寸和相对尺寸并不对应于本发明实际应用中的真实尺寸。
图1-5为制造本发明的半导体结构500a的一实施例的剖视图。半导体结构500a的一实施例包括引线接合封装(wire bonding package)。半导体结构500a的一实施例包括被动元件，被动元件通过集成被动元件(integrated passive device，IPD)工艺集成在导电垫(conductive pad)上，因此被动元件可能会比配置于互连结构中的传统的被动元件更厚，传统的互连结构中的被动元件不具有额外的金属层。另外，被动元件由有机可焊性保护(organic solderability preservative，OSP)膜进行保护。有机可焊性保护膜通过镍-自由(nickel-free)工艺形成。如果被动元件是电感器或变压器元件(balun device)，有机可焊性保护膜可以防止在被动元件的操作过程中表面效应的发生。被动元件(例如，电感器或变压器元件)被有机可焊性保护膜所覆盖，能够减小电阻并具有较高的品质因数。
请参阅图1，在本发明的一些实施例中提供半导体芯片300。在一些实施例中，半导体芯片300包括基板200和设置于基板200上的半导体元件202。互连结构220形成在基板200上，覆盖半导体元件202。在一些实施例中，在互连结构220内为半导体元件202设有电传输路径。互连结构220可包括多个金属层、多个介电层(dielectric layer)和多个介层窗(via)，多个金属层和多个介电层相互交替，多个介层窗形成在基板200上并穿过介电层。例如，互连结构220的金属层可包括金属层210、212和214以及导电垫226。同样，导电垫226为互连结构220的金属层的最上层金属层。在一些实施例中，导电垫用于传输半导体芯片300的输入/输出、接地或电源信号，或者用于传输电源信号至随后的形成在半导体芯片300上的被动元件。在本实施例中，导电垫226用于传输电源信号至随后的形成在半导体芯片300上的被动元件。在一些实施例中，导电垫226由铝(Al)形成。在一些实施例中，半导体芯片300还包括一些其他的导电垫，用于根据客制化设计传输半导体芯片300的输入/输出、接地或电源信号。例如，互连结构220的介电层可包括介电层216和第一钝化层(passivationlayer)224。同样，第一钝化层224为互连结构220的介电层的最上层介电层。
请再参阅图1，根据本发明的一些实施例，集成被动元件工艺是在半导体芯片300上执行的。集成被动元件工艺用于在导电垫上集成被动元件。被动元件被半导体芯片300的互连结构的钝化层所包围。第二钝化层228通过涂覆法(coating method)形成并覆盖导电垫226。在一些实施例中，当半导体芯片300受到各种类型的环境应力时，第二钝化层228用于提供可靠的绝缘保护。在一些实施例中，第二钝化层228包括感光材料。接着，第二钝化层228进行图案化工艺(patterning process)，图案化工艺包括光刻(photolithography)和显影工艺(develop process)，以形成穿过第二钝化层228的开口230和232。开口230和232形成在导电垫226上，以使导电垫226的上表面227的一部分分别从开口230和232露出来。
请再参阅图1，根据本发明的一些实施例，第二钝化层228经过固化工艺(curingprocess)进行固化。在固化工艺之后，由于钝化层的收缩，第二钝化层228的高度(level)下降。
请参阅图2，根据本发明的一些实施例，凸块下金属层(under bump metallurgylayer)235通过沉积方法(deposition method)形成在第二钝化层228上。在一些实施例中，沉积方法包括物理气相沉积(physical vapor deposition，PVD)，例如溅镀和电镀法。在一些实施例中，凸块下金属层235分布(line)在开口230和232的侧壁231以及底面。开口230和232的底面也是第二钝化层228的上表面227的一部分。同样，凸块下金属层235延伸到第二钝化层228的上表面229。在一些实施例中，凸块下金属层235包括阻障层(barrier layer)234和种晶层(seed layer)236，阻障层例如为铜(钛)层(copper(Ti)layer)，种晶层236例如为铜(铜)层(copper(Cu)layer)，种晶层236位于阻障层234上方。在一些其他实施例中，阻障层234包括氮化钛(titanium nitride，TiN)层、钽层(tantalum，Ta)或氮化钽(tantalum nitride，TaN)层。在一些其他实施例中，种晶层236包括银层(silver(Ag))、金层(gold(Au))、铝层(aluminum(Al))或其组合。
图3-5显示的是凸块下金属层235上的被动元件的形成过程。请参照图3，根据本发明一些实施例，光阻层(photoresist layer)238全部形成在凸块下金属层235上。在一些实施例中，光阻层238包括干膜光阻剂(dry film photoresist)或液体光阻剂(liquidphotoresist)。接着，光阻层238通过光刻工艺(photolithography process)以在导电垫226上方形成开口240，光刻工艺包括曝光工序(exposure step)和显影工序(developmentstep)。在一些实施例中，开口240定义了随后的被动元件的形成位置。在图3所示的实施例中，开口240与开口230互连。因此，开口230和凸块下金属层235的一部分暴露于开口240，凸块下金属层235的一部分形成并分布在开口230的侧壁231以及延伸到第二钝化层228的上表面229。
请参照图4，根据本发明的一些实施例，通过电镀法(electroplating method)，在开口240的底面上形成被动元件242。在一些实施例中，被动元件242填充开口240并覆盖住凸块下金属层235的一部分，凸块下金属层235的该部分暴露于光阻层238的开口240。因此，被动元件242穿过光阻层238，通过凸块下金属层电连接于导电垫226。在一些实施例中，被动元件242包括电感器。在一些其他的实施例中，被动元件242包括变压器元件、转换器、布线(routing)或天线。在一些其他的实施例中，被动元件242由铜形成，因此可防止在后续的回焊工艺(solder re-flow process)中变形，回焊工艺用于凸块结构或引线接合工艺(wire bonding process)。在一些实施例中，被动元件242可能比较厚(由光阻层238限定的)，并具有坚固的结构，特别是用于形成电感器。
请参照图5，根据本发明的一些实施例，通过剥离工艺(stripping process)去除光阻层238。在一些其他的实施例中，剥离工艺包括使用适当的蚀刻剂的湿蚀刻工艺(wetetching process)。接着，执行各项异性蚀刻工艺(anisotropic etching process)以去除不被被动元件242覆盖的凸块下金属层，因此形成位于被动元件242下方的凸块下金属层图案235a。
接着，请再参考图5，根据本发明的一些实施例，通过涂覆工艺，在被动元件242的上表面241和侧壁243上形成有机可焊性保护膜244。在一些实施例中，有机可焊性保护膜244设置在第二钝化层228上。值得注意的是，由于有机可焊性保护膜的成本低、易处理、低温处理和环保以及无金属(例如，无镍)化学，因此有机可焊性保护膜用于焊接的表面处理。在一些实施例中，有机可焊性保护膜244包括组合物(composition)，该组合物包括烷基环醇(alkyl cyclic alcohol)、唑衍生物(azole derivative)和金属离子(metal ion)，该金属离子是从锌(II)离子、铜(II)离子、镍(II)离子、钴(II)离子、铁(II)离子以及各种离子的组合中选择出来的。在一些其他的实施例中，有机可焊性保护膜244包括组合物，该组合物基本上由浓度大致为0.5-100mL/L的烷基环醇、唑衍生物、锌(II)离子和水组成。在一些其他的实施例中，有机可焊性保护膜244包括组合物，该组合物包括沸点至少为150℃的不含乙二醇的一元醇(glycol-free monohydric alcohol)、唑衍生物和金属离子，该金属离子是从锌(II)离子、铜(II)离子、镍(II)离子、钴(II)离子、铁(II)离子以及各种离子的组合中选择出来的。在一些其他的实施例中，有机可焊性保护膜244包括组合物，该组合物包括：沸点至少为150℃的不含乙二醇的一元醇、唑衍生物、金属离子和羧酸(carboxylicacid)，该金属离子是从锌(II)离子、铜(II)离子、镍(II)离子、钴(II)离子、铁(II)离子和各种离子的组合中选择出来的，该羧酸是从甲酸(formic acid)、乙酸(acetic acid)以及二者的组合中选择出来的。在一些其他的实施例中，有机可焊性保护膜244包括组合物，该组合物基本上由烷基环醇、唑衍生物、锌(II)离子、水和络合剂(complexing agent)组成，该络合剂是从甘氨酸(glycine)、乙二胺四乙酸(ethylenediaminetetraacetic acid，EDTA)、乙二胺(ethylenediamine)以及其组合中选择出来的。在一些其他的实施例中，有机可焊性保护膜244包括组合物，该组合物包括烷基环醇、唑衍生物、锌(II)离子、水和羧酸，该羧酸是从甲酸、乙酸以及二者的组合中选择出来的。
在一些实施例中，有机可焊性保护膜244可以选择性地结合铜和/或金，并提供有机金属层以在焊接过程中保护铜和/或金。因此，有机可焊性保护膜244选择性地形成在被动元件242的上表面241和侧壁243上，并与被动元件242相接触，被动元件由铜形成，有机可焊性保护膜244位于第二钝化层228的上表面239上。也就是说，有机可焊性保护膜244仅与第二钝化层228上的被动元件242的第一部分242a相接触。凸块下金属层图案235a与被动元件242的第二部分242b相接触，被动元件的第二部分242b穿过第二钝化层228。这样，避免了有机可焊性保护膜244与第二钝化层228的接触。
根据本发明的实施例，在图5所示的涂覆工艺之后，半导体结构300的被动元件242与覆盖其上的有机可焊性保护膜244完全形成。凸块下金属层图案235a和有机可焊性保护膜244整合在被动元件242上。凸块下金属层图案235a和有机可焊性保护膜244一起将被动元件242包围起来。凸块下金属层图案235a与导电垫226和被动元件242相接触。值得注意的是，导电垫226仅用于传输形成于其上的被动元件242的电源信号，因此导电垫226部分地，而非全部地，与被动元件242相重叠。
接下来，请再参照图5，根据本发明一些实施例，通过金或铜引线接合工艺，接合引线248穿过开口232形成，并与导电垫226相接触。在完成上述工艺之后，本发明一实施例的半导体结构500a全部形成。
图6-8为制造本发明的半导体结构500b的另一实施例的剖视图。在一些实施例中，半导体结构500b包括覆晶封装(flip chip package)。在一些实施例中，半导体结构500b包括被动元件和导电柱(conductive pillar)，导电柱位于凸块结构的金属垫和导电凸块之间。本实施例中的元件与先前描述的图1-5中的元件相同或相似，因此为简洁起见，在此不再重复。
图6-8还显示了半导体结构500b的凸块下金属层235上的被动元件和导电柱的形成。接下来，请参照图6，根据本发明一些实施例，光阻层338全部形成在凸块下金属层235上。在一些实施例中，光阻层338包括干膜光阻剂或液体光阻剂。接着，光阻层338通过光刻工艺以在导电垫226上方形成开口240和252，光刻工艺包括曝光工序和显影工序。在一些实施例中，开口240和252定义了随后的被动元件和导电柱的形成位置。在图6所示的一些实施例中，开口240与开口230互连，开口230位于开口250下方。开口252与开口232互连，开口232位于开口252下方。在一些实施例中，开口230和凸块下金属层235的一部分暴露于开口240，凸块下金属层235的一部分形成并分布在开口230的侧壁231以及延伸到第二钝化层228的上表面229。在一些实施例中，开口232和凸块下金属层235的另一部分暴露于开口252，凸块下金属层235的另一部分形成并分布在开口232的侧壁233以及延伸到第二钝化层228的上表面229。
请参照图7，根据本发明的一些实施例，在被动元件242的形成过程中，通过电镀法在开口252的底面上形成导电柱254。在一些实施例中，被动元件242填充开口240并覆盖住凸块下金属层235的一部分，凸块下金属层235的该部分暴露于光阻层338的开口240。在一些实施例中，导电柱254填充开口252并覆盖住凸块下金属层235的另一部分，凸块下金属层235的该另一部分暴露于光阻层338的开口252。因此，被动元件242和导电柱254穿过光阻层338，通过凸块下金属层电连接于导电垫226。在一些实施例中，被动元件242包括电感器。在一些其他的实施例中，被动元件242包括变压器元件、转换器、布线(routing)或天线。在一些实施例中，被动元件242可能比较厚(由光阻层338限定的)，并具有坚固的结构，特别是用于形成电感器。在一些实施例中，导电柱254用于作为后续导电垫的焊接点，导电垫用于传输形成于其上的半导体芯片300的输入/输出、接地或电源信号。因此，导电柱254可帮助提高凸块结构的机械强度(mechanical strength)。在一些实施例中，导电柱254可由铜形成，因此可防止在后续的回焊工艺中变形。
请参照图8，根据本发明的一些实施例，通过剥离工艺(stripping process)去除光阻层338。在一些其他的实施例中，剥离工艺包括使用适当的蚀刻剂的湿蚀刻工艺。接着，执行各项异性蚀刻工艺以去除不被被动元件242和导电柱254覆盖的凸块下金属层235。在执行各项异性蚀刻工艺后，在被动元件242下方形成凸块下金属层图案235a，在导电柱254下方形成凸块下金属层图案235b。凸块下金属层图案235a与凸块下金属层图案235b是分开的。
接着，请再参考图8，根据本发明的一些实施例，形成另一光阻图案(图未示)以覆盖导电柱254。被动元件242暴露于光阻图案外。在一些实施例中，光阻图案包括干膜电阻剂或液体电阻剂。
接着，请再参考图8，根据本发明的一些实施例，通过涂覆工艺，在被动元件242的上表面241和侧壁243上形成有机可焊性保护膜244。在一些实施例中，有机可焊性保护膜244设置在第二钝化层228上。值得注意的是，由于有机可焊性保护膜的成本低、易处理、低温处理和环保以及无金属(例如，无镍)化学，因此有机可焊性保护膜用于焊接的表面处理。在一些实施例中，有机可焊性保护膜244包括组合物，该组合物包括烷基环醇、唑衍生物和金属离子，该金属离子是从锌(II)离子、铜(II)离子、镍(II)离子、钴(II)离子、铁(II)离子以及各种离子的组合中选择出来的。在一些其他的实施例中，有机可焊性保护膜244包括组合物，该组合物基本上由浓度大致为0.5-100mL/L的烷基环醇、唑衍生物、锌(II)离子和水组成。在一些其他的实施例中，有机可焊性保护膜244包括组合物，该组合物包括沸点至少为150℃的不含乙二醇的一元醇、唑衍生物和金属离子，该金属离子是从锌(II)离子、铜(II)离子、镍(II)离子、钴(II)离子、铁(II)离子以及各种离子的组合中选择出来的。在一些其他的实施例中，有机可焊性保护膜244包括组合物，该组合物包括：沸点至少为150℃的不含乙二醇的一元醇、唑衍生物、金属离子和羧酸，该金属离子是从锌(II)离子、铜(II)离子、镍(II)离子、钴(II)离子、铁(II)离子和各种离子的组合中选择出来的，该羧酸是从甲酸、乙酸以及二者的组合中选择出来的。在一些其他的实施例中，有机可焊性保护膜244包括组合物，该组合物基本上由烷基环醇、唑衍生物、锌(II)离子、水和络合剂组成，该络合剂是从甘氨酸、乙二胺四乙酸、乙二胺和其组合中选择出来的。在一些其他的实施例中，有机可焊性保护膜244包括组合物，该组合物包括烷基环醇、唑衍生物、锌(II)离子、水和羧酸，该羧酸是从甲酸、乙酸以及二者的组合中选择出来的。
在一些实施例中，有机可焊性保护膜244可以选择性地结合铜和/或金，并提供有机金属层以在焊接过程中保护铜和/或金。因此，有机可焊性保护膜244选择性地形成在被动元件242的上表面241和侧壁243上，并与被动元件242相接触，被动元件由铜形成于第二钝化层228的上表面239。也就是说，有机可焊性保护膜244仅与第二钝化层228上的被动元件242的第一部分242a相接触。凸块下金属层图案235a与被动元件242的第二部分242b相接触，被动元件的第二部分242b穿过第二钝化层228。另外，避免了有机可焊性保护膜244与第二钝化层228的接触。
接着，请再次参考图8，在一些实施例中，通过剥离工艺去除覆盖导电柱254的光阻图案(图未示)。在一些其他的实施例中，剥离工艺包括使用适当的蚀刻剂的湿蚀刻工艺。
接着，请再次参考图8，形成另一光阻图案(图未示)以覆盖被动元件242和有机可焊性保护膜244。导电柱254暴露于光阻图案外。在一些实施例中，光阻图案包括干膜光阻剂或液体光阻剂。
接着，请再次参考图8，通过电镀法在导电柱254上形成导电缓冲层256。在一实施例中，导电缓冲层256是可选择的元件，可作为随后形成于其上的导电凸块的种晶层、黏附层(adhesion layer)和阻障层。在一实施例中，导电缓冲层256可包括镍。
接着，通过电镀图案化的光阻层或通过筛网印刷工艺(screen printingprocess)，在导电缓冲层256上形成焊料。接着移除图案化的光阻层以及执行回焊工艺，以在导电柱254上形成导电凸块258。在一些其他的实施例中，导电柱254、叠加于其上的导电凸块258和中间的导电缓冲层256(可选的)共同形成凸块结构260。
接着，请再次参考图8，在一些实施例中，通过剥离工艺，去除覆盖住被动装置242和有机可焊性保护膜244的光阻图案(图未示)。在一些其他的实施例中，剥离工艺包括使用适当的蚀刻剂的湿蚀刻工艺。
在一些实施例中，可调换有机可焊性保护膜244和凸块结构260的工艺顺序。例如，可先形成光阻图案覆盖被动元件242，以形成凸块结构260，然后去除覆盖被动元件242的光阻图案。接着形成另一光阻图案覆盖凸块结构260，以形成被动元件242上的有机可焊性保护膜244。
根据本发明一些实施例，在完成上述工艺之后，本发明一实施例的半导体结构500b全部形成，半导体结构500b包括上面覆盖有有机可焊性保护膜244的被动元件242和凸块结构260。凸块下金属层图案235a和有机可焊性保护膜244整合在被动元件242上。凸块下金属层图案235a和有机可焊性保护膜244一起将被动元件242包围起来。凸块下金属层图案235a与导电垫226和被动元件242相接触。值得注意的是，导电垫226和导电结构260用于传输形成在导电垫226上的被动元件242的电源信号，因此导电垫226部分地，而非全部地，与被动元件242和凸块结构260相重叠。
此外，半导体结构500b接合在印刷电路板(图未示)上。在一些实施例中，覆晶填充材料(图未示)可选择性地填充在半导体结构500b和印刷电路板之间的空隙。值得注意的是，半导体结构500b的导电凸块260与印刷电路板上的金属垫接合，金属垫设置于半导体结构500b的导电凸块260和被动元件242的上方。
本发明的实施例的半导体结构500a和500b具有以下优点。半导体结构500a和500b包括通过集成被动元件工艺整合在导电垫上方的被动元件。半导体结构500a和500b中的被动元件242(图5或图8)通过有机可焊性保护膜进行保护。通过简单的工艺，使用有机可焊性保护膜替代镍/金保护层。如果被动元件是电感器或变压器元件，有机可焊性保护膜可以防止在被动元件的操作过程中的表面效应的发生。被动元件(例如，电感器或变压器元件)被有机可焊性保护膜所覆盖，能够减小电阻并具有较高的品质因数。被动元件可与接合引线的形成在同一水平上。作为一种选择，被动元件也可与导电柱形成在同一水平上，导电柱位于凸块结构上的金属垫与导电凸块之间，凸块结构不具有额外的金属层。本发明的实施例中的被动元件比传统的互连结构中的被动元件更厚。如果被动元件是电感器或变压器元件，被动元件会具有减小的电阻和高的品质因数。此外，由于被动元件的区域并不受互连结构的金属层和介层窗的分布的限制，被动元件的层高度可具有更广泛的设计规则。
以上所述仅为本发明的较佳实施方式，凡依本发明权利要求所做的均等变化和修饰，均应属本发明的涵盖范围。

Claims (8)

1.一种半导体结构，其特征在于，包括：
基底；
第一钝化层，设置于所述基底上；
导电垫，设置于所述第一钝化层上；
第二钝化层，设置于所述第一钝化层上；
被动元件，设置于所述导电垫上，并穿过所述第二钝化层；
凸块下金属层；以及
有机可焊性保护膜，与所述凸块下金属层一起将所述被动元件包围起来；
其中，所述凸块下金属层延伸至所述第二钝化层的上表面，并且所述有机可焊性保护膜不与所述第二钝化层相接触。
2.如权利要求1所述的半导体结构，其特征在于，所述被动元件包括变压器元件、电感器、转换器、布线或天线。
3.如权利要求1所述的半导体结构，其特征在于，所述第二钝化层具有穿过所述第二钝化层的第一开口，所述导电垫从所述第一开口暴露出来。
4.如权利要求3所述的半导体结构，其特征在于，
该凸块下金属层，设置于所述第一钝化层和所述第二钝化层上，其中所述凸块下金属层分布在所述第一开口的侧壁并覆盖从所述第一开口暴露出来的所述导电垫。
5.如权利要求4所述的半导体结构，其特征在于，所述被动元件设置于所述凸块下金属层上，通过所述凸块下金属层电连接至所述导电垫。
6.如权利要求3所述的半导体结构，其特征在于，所述第二钝化层具有穿过所述第二钝化层的第二开口，所述导电垫从所述第二开口暴露出来。
7.如权利要求6所述的半导体结构，其特征在于，还包括：
导电凸块，设置于所述第二开口中，电连接至所述导电垫。
8.如权利要求1所述的半导体结构，其特征在于，所述有机可焊性保护膜仅与所述第二钝化层上的所述被动元件的第一部分相接触，所述凸块下金属层与所述被动元件的第二部分相接触，所述被动元件的所述第二部分穿过所述第二钝化层。
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