CN104521000B - 具有可调的高栅极‑源极额定电压的iii族氮化物增强型晶体管 - Google Patents

具有可调的高栅极‑源极额定电压的iii族氮化物增强型晶体管 Download PDF

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CN104521000B
CN104521000B CN201380041952.1A CN201380041952A CN104521000B CN 104521000 B CN104521000 B CN 104521000B CN 201380041952 A CN201380041952 A CN 201380041952A CN 104521000 B CN104521000 B CN 104521000B
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gan fet
gate
depletion
mode gan
layer
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CN104521000A (zh
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S·彭迪哈卡
N·特珀尔内尼
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Texas Instruments Inc
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201380041952.1A 2012-08-09 2013-08-08 具有可调的高栅极‑源极额定电压的iii族氮化物增强型晶体管 Active CN104521000B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261681298P 2012-08-09 2012-08-09
US61/681,298 2012-08-09
US13/886,410 US8933461B2 (en) 2012-08-09 2013-05-03 III-nitride enhancement mode transistors with tunable and high gate-source voltage rating
US13/886,410 2013-05-03
PCT/US2013/054168 WO2014026018A1 (en) 2012-08-09 2013-08-08 Iii-nitride enhancement mode transistors with tunable and high gate-source voltage rating

Publications (2)

Publication Number Publication Date
CN104521000A CN104521000A (zh) 2015-04-15
CN104521000B true CN104521000B (zh) 2018-01-02

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CN201380041952.1A Active CN104521000B (zh) 2012-08-09 2013-08-08 具有可调的高栅极‑源极额定电压的iii族氮化物增强型晶体管

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US (1) US8933461B2 (enExample)
JP (1) JP6476114B2 (enExample)
CN (1) CN104521000B (enExample)
WO (1) WO2014026018A1 (enExample)

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US8916427B2 (en) 2013-05-03 2014-12-23 Texas Instruments Incorporated FET dielectric reliability enhancement
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US20160293596A1 (en) * 2015-03-30 2016-10-06 Texas Instruments Incorporated Normally off iii-nitride transistor
US10205313B2 (en) 2015-07-24 2019-02-12 Symptote Technologies, LLC Two-transistor devices for protecting circuits from sustained overcurrent
JP6651186B2 (ja) 2015-09-21 2020-02-19 シンプトート テクノロジーズ エルエルシー 回路を保護するための単一トランジスタデバイスおよびそのための自己触媒電圧変換
US9685545B2 (en) * 2015-11-25 2017-06-20 Texas Instruments Incorporated Isolated III-N semiconductor devices
US11145648B2 (en) * 2017-03-31 2021-10-12 Intel Corporation Enhancement/depletion device pairs and methods of producing the same
US10784770B2 (en) 2018-02-09 2020-09-22 Delta Electronics, Inc. Conversion circuit
US10734882B2 (en) 2018-02-09 2020-08-04 Delta Electronics, Inc. Conversion circuit
US10784768B2 (en) 2018-02-09 2020-09-22 Delta Electronics, Inc. Conversion circuit and conversion circuitry
US11309887B2 (en) 2018-02-09 2022-04-19 Delta Electronics, Inc. Conversion circuit
WO2019175471A1 (en) * 2018-03-14 2019-09-19 Emberion Oy Surface mesfet
US10516043B1 (en) * 2018-07-19 2019-12-24 Cree, Inc. Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistors
US10840798B1 (en) 2018-09-28 2020-11-17 Dialog Semiconductor (Uk) Limited Bidirectional signaling method for high-voltage floating circuits
CN109742072B (zh) * 2019-01-04 2019-08-16 苏州汉骅半导体有限公司 集成增强型和耗尽型的hemt及其制造方法
JP7300840B2 (ja) 2019-02-04 2023-06-30 ローム株式会社 窒化物半導体装置の製造方法
CN113826206B (zh) 2019-03-21 2025-10-21 创世舫科技有限公司 Iii-氮化物器件的集成设计
US11101378B2 (en) * 2019-04-09 2021-08-24 Raytheon Company Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors
US11658236B2 (en) 2019-05-07 2023-05-23 Cambridge Gan Devices Limited III-V semiconductor device with integrated power transistor and start-up circuit
US11955488B2 (en) * 2019-05-07 2024-04-09 Cambridge Gan Devices Limited III-V semiconductor device with integrated power transistor and start-up circuit
US11081578B2 (en) 2019-05-07 2021-08-03 Cambridge Gan Devices Limited III-V depletion mode semiconductor device
US11302785B2 (en) 2019-06-18 2022-04-12 Texas Instruments Incorporated Method for testing a high voltage transistor with a field plate
US11545566B2 (en) 2019-12-26 2023-01-03 Raytheon Company Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancement
US11362190B2 (en) 2020-05-22 2022-06-14 Raytheon Company Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers
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CN102683405A (zh) * 2011-03-18 2012-09-19 富士通半导体股份有限公司 半导体器件、制造方法以及晶体管电路

Also Published As

Publication number Publication date
WO2014026018A1 (en) 2014-02-13
CN104521000A (zh) 2015-04-15
US8933461B2 (en) 2015-01-13
JP2015529019A (ja) 2015-10-01
JP6476114B2 (ja) 2019-02-27
US20140042452A1 (en) 2014-02-13

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