CN104520068B - 具有位于透明基层上方的包括孔口或开口的抛光表面层的抛光垫 - Google Patents

具有位于透明基层上方的包括孔口或开口的抛光表面层的抛光垫 Download PDF

Info

Publication number
CN104520068B
CN104520068B CN201380041299.9A CN201380041299A CN104520068B CN 104520068 B CN104520068 B CN 104520068B CN 201380041299 A CN201380041299 A CN 201380041299A CN 104520068 B CN104520068 B CN 104520068B
Authority
CN
China
Prior art keywords
surface layer
basic unit
polishing pad
polished surface
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380041299.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN104520068A (zh
Inventor
P·A·勒菲弗
W·C·阿里森
J·P·拉卡斯
D·斯科特
A·W·辛普森
黄平
L·M·查尔恩斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of CN104520068A publication Critical patent/CN104520068A/zh
Application granted granted Critical
Publication of CN104520068B publication Critical patent/CN104520068B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B24B37/16—Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/001—Manufacture of flexible abrasive materials
    • B24D11/003—Manufacture of flexible abrasive materials without embedded abrasive particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/009—Tools not otherwise provided for

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
CN201380041299.9A 2012-06-04 2013-05-29 具有位于透明基层上方的包括孔口或开口的抛光表面层的抛光垫 Active CN104520068B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/488,149 2012-06-04
US13/488,149 US9597769B2 (en) 2012-06-04 2012-06-04 Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer
PCT/US2013/043126 WO2013184465A1 (en) 2012-06-04 2013-05-29 Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer

Publications (2)

Publication Number Publication Date
CN104520068A CN104520068A (zh) 2015-04-15
CN104520068B true CN104520068B (zh) 2018-02-02

Family

ID=48607367

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380041299.9A Active CN104520068B (zh) 2012-06-04 2013-05-29 具有位于透明基层上方的包括孔口或开口的抛光表面层的抛光垫

Country Status (8)

Country Link
US (1) US9597769B2 (https=)
EP (1) EP2872291B1 (https=)
JP (2) JP5908169B2 (https=)
KR (3) KR101729610B1 (https=)
CN (1) CN104520068B (https=)
SG (2) SG11201407839PA (https=)
TW (2) TWI554364B (https=)
WO (1) WO2013184465A1 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8657653B2 (en) * 2010-09-30 2014-02-25 Nexplanar Corporation Homogeneous polishing pad for eddy current end-point detection
WO2014018170A1 (en) * 2012-07-23 2014-01-30 Jh Rhodes Company, Inc. Non-planar glass polishing pad and method of manufacture
US20140370788A1 (en) * 2013-06-13 2014-12-18 Cabot Microelectronics Corporation Low surface roughness polishing pad
SG11201608134YA (en) 2014-04-03 2016-10-28 3M Innovative Properties Co Polishing pads and systems and methods of making and using the same
KR102440303B1 (ko) * 2014-05-07 2022-09-05 씨엠씨 머티리얼즈, 인코포레이티드 Cmp용 다층 연마 패드
US9238294B2 (en) * 2014-06-18 2016-01-19 Nexplanar Corporation Polishing pad having porogens with liquid filler
JP6354432B2 (ja) * 2014-08-04 2018-07-11 日本電気硝子株式会社 研磨パッド
US10086500B2 (en) * 2014-12-18 2018-10-02 Applied Materials, Inc. Method of manufacturing a UV curable CMP polishing pad
US10946495B2 (en) * 2015-01-30 2021-03-16 Cmc Materials, Inc. Low density polishing pad
TWI549781B (zh) * 2015-08-07 2016-09-21 智勝科技股份有限公司 研磨墊、研磨系統及研磨方法
US9868185B2 (en) 2015-11-03 2018-01-16 Cabot Microelectronics Corporation Polishing pad with foundation layer and window attached thereto
US10864612B2 (en) * 2016-12-14 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing pad and method of using
EP3571009A4 (en) * 2017-01-20 2021-01-20 Applied Materials, Inc. THIN PLASTIC POLISHING ITEM FOR CMP APPLICATIONS
CN106926116B (zh) * 2017-01-23 2018-07-13 安徽禾臣新材料有限公司 Stn玻璃抛光用吸附垫
KR101945869B1 (ko) * 2017-08-07 2019-02-11 에스케이씨 주식회사 우수한 기밀성을 갖는 연마패드
CN109333386A (zh) * 2018-11-07 2019-02-15 智慧双创(深圳)科技有限公司 一种自锐性金刚石砂轮及其制备工艺
US11331767B2 (en) * 2019-02-01 2022-05-17 Micron Technology, Inc. Pads for chemical mechanical planarization tools, chemical mechanical planarization tools, and related methods
KR102248338B1 (ko) * 2019-10-01 2021-05-06 (주)앰스코 연마 대상물의 요철부에 삽입 가능한 연마부재
JP7348860B2 (ja) * 2020-02-26 2023-09-21 富士紡ホールディングス株式会社 研磨パッド及び研磨パッドの製造方法
CN112720282B (zh) * 2020-12-31 2022-04-08 湖北鼎汇微电子材料有限公司 一种抛光垫
KR102488101B1 (ko) * 2021-05-04 2023-01-12 에스케이엔펄스 주식회사 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법
JP7441916B2 (ja) 2021-10-12 2024-03-01 エスケー エンパルス カンパニー リミテッド 研磨パッドおよびこれを用いた半導体素子の製造方法
USD1022364S1 (en) 2022-06-03 2024-04-09 Entegris, Inc. Polyvinyl alcohol pad
EP4533529A1 (en) * 2022-06-03 2025-04-09 Entegris, Inc. Devices for cleaning substrates and related methods
USD1027345S1 (en) 2022-06-03 2024-05-14 Entegris, Inc. Polyvinyl alcohol pad

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1306163A1 (en) * 2001-10-26 2003-05-02 JSR Corporation Window member for chemical mechanical polishing and polishing pad
TWI221105B (en) * 2002-05-13 2004-09-21 Jsr Corp Polishing pad for semiconductor wafer, polishing laminate comprising the same for semiconductor wafer, and method for polishing semiconductor wafer
CN1805826A (zh) * 2003-06-17 2006-07-19 卡博特微电子公司 用于化学机械抛光的多层抛光垫材料
CN101107095A (zh) * 2005-01-26 2008-01-16 应用材料股份有限公司 用于低压研磨的多层研磨垫
CN101184582A (zh) * 2005-04-25 2008-05-21 卡伯特微电子公司 用于化学机械抛光的多层抛光垫材料
CN101443157A (zh) * 2006-05-17 2009-05-27 东洋橡胶工业株式会社 抛光垫
CN101636247A (zh) * 2007-03-15 2010-01-27 东洋橡胶工业株式会社 研磨垫

Family Cites Families (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1953983A (en) 1928-02-07 1934-04-10 Carborundum Co Manufacture of rubber bonded abrasive articles
IE61697B1 (en) 1987-12-22 1994-11-16 De Beers Ind Diamond Abrasive product
US5190568B1 (en) 1989-01-30 1996-03-12 Ultimate Abrasive Syst Inc Abrasive tool with contoured surface
US5212910A (en) 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5609517A (en) 1995-11-20 1997-03-11 International Business Machines Corporation Composite polishing pad
US5624303A (en) 1996-01-22 1997-04-29 Micron Technology, Inc. Polishing pad and a method for making a polishing pad with covalently bonded particles
CN1118354C (zh) 1997-05-09 2003-08-20 罗德尔控股公司 镶嵌式抛光垫及其制造方法
US5921855A (en) 1997-05-15 1999-07-13 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing system
JP2918883B1 (ja) 1998-07-15 1999-07-12 日本ピラー工業株式会社 研磨パッド
US6183346B1 (en) 1998-08-05 2001-02-06 3M Innovative Properties Company Abrasive article with embossed isolation layer and methods of making and using
US6413153B1 (en) 1999-04-26 2002-07-02 Beaver Creek Concepts Inc Finishing element including discrete finishing members
US6179887B1 (en) 1999-02-17 2001-01-30 3M Innovative Properties Company Method for making an abrasive article and abrasive articles thereof
WO2000060650A1 (en) 1999-03-31 2000-10-12 Nikon Corporation Polishing body, polisher, method for adjusting polisher, method for measuring thickness of polished film or end point of polishing, method for producing semiconductor device
US6217426B1 (en) 1999-04-06 2001-04-17 Applied Materials, Inc. CMP polishing pad
EP1268134A1 (en) 1999-12-14 2003-01-02 Rodel Holdings, Inc. Method of manufacturing a polymer or polymer composite polishing pad
US6498101B1 (en) 2000-02-28 2002-12-24 Micron Technology, Inc. Planarizing pads, planarizing machines and methods for making and using planarizing pads in mechanical and chemical-mechanical planarization of microelectronic device substrate assemblies
US6454634B1 (en) * 2000-05-27 2002-09-24 Rodel Holdings Inc. Polishing pads for chemical mechanical planarization
US6736709B1 (en) 2000-05-27 2004-05-18 Rodel Holdings, Inc. Grooved polishing pads for chemical mechanical planarization
JP4615813B2 (ja) 2000-05-27 2011-01-19 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 化学機械平坦化用の研磨パッド
US6860802B1 (en) * 2000-05-27 2005-03-01 Rohm And Haas Electric Materials Cmp Holdings, Inc. Polishing pads for chemical mechanical planarization
US6685537B1 (en) 2000-06-05 2004-02-03 Speedfam-Ipec Corporation Polishing pad window for a chemical mechanical polishing tool
JP2002172563A (ja) 2000-11-24 2002-06-18 Three M Innovative Properties Co 研磨テープ
CN100496896C (zh) 2000-12-01 2009-06-10 东洋橡膠工业株式会社 研磨垫
US6523215B2 (en) 2001-04-04 2003-02-25 Saint-Gobain Abrasives Technology Company Polishing pad and system
KR100858392B1 (ko) 2001-04-25 2008-09-11 제이에스알 가부시끼가이샤 반도체 웨이퍼용 연마 패드와, 이를 구비한 반도체웨이퍼용 연마 적층체와, 반도체 웨이퍼의 연마 방법
US6544373B2 (en) 2001-07-26 2003-04-08 United Microelectronics Corp. Polishing pad for a chemical mechanical polishing process
JP3851135B2 (ja) 2001-10-17 2006-11-29 ニッタ・ハース株式会社 研磨パッド
US6722249B2 (en) 2001-11-06 2004-04-20 Rodel Holdings, Inc Method of fabricating a polishing pad having an optical window
US7121938B2 (en) * 2002-04-03 2006-10-17 Toho Engineering Kabushiki Kaisha Polishing pad and method of fabricating semiconductor substrate using the pad
US7201647B2 (en) 2002-06-07 2007-04-10 Praxair Technology, Inc. Subpad having robust, sealed edges
US8602851B2 (en) 2003-06-09 2013-12-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Controlled penetration subpad
US6838169B2 (en) 2002-09-11 2005-01-04 Psiloquest, Inc. Polishing pad resistant to delamination
KR100465649B1 (ko) 2002-09-17 2005-01-13 한국포리올 주식회사 일체형 연마 패드 및 그 제조 방법
US8845852B2 (en) 2002-11-27 2014-09-30 Toyo Tire & Rubber Co., Ltd. Polishing pad and method of producing semiconductor device
JP2004243428A (ja) 2003-02-12 2004-09-02 Rodel Nitta Co 研磨パッド
TWI290504B (en) 2003-07-17 2007-12-01 Jsr Corp Chemical mechanical polishing pad and chemical mechanical polishing method
US7160178B2 (en) 2003-08-07 2007-01-09 3M Innovative Properties Company In situ activation of a three-dimensional fixed abrasive article
US7195539B2 (en) 2003-09-19 2007-03-27 Cabot Microelectronics Coporation Polishing pad with recessed window
US7204742B2 (en) 2004-03-25 2007-04-17 Cabot Microelectronics Corporation Polishing pad comprising hydrophobic region and endpoint detection port
US7198549B2 (en) 2004-06-16 2007-04-03 Cabot Microelectronics Corporation Continuous contour polishing of a multi-material surface
US7097542B2 (en) 2004-07-26 2006-08-29 Intel Corporation Method and apparatus for conditioning a polishing pad
WO2006057720A1 (en) 2004-11-29 2006-06-01 Rajeev Bajaj Method and apparatus for improved chemical mechanical planarization pad with pressure control and process monitor
US7846008B2 (en) 2004-11-29 2010-12-07 Semiquest Inc. Method and apparatus for improved chemical mechanical planarization and CMP pad
US7169029B2 (en) 2004-12-16 2007-01-30 3M Innovative Properties Company Resilient structured sanding article
EP1848569B1 (en) 2005-02-18 2016-11-23 NexPlanar Corporation Customized polishing pads for cmp and method of using the same
TWI385050B (zh) 2005-02-18 2013-02-11 Nexplanar Corp 用於ｃｍｐ之特製拋光墊及其製造方法及其用途
JP4620501B2 (ja) 2005-03-04 2011-01-26 ニッタ・ハース株式会社 研磨パッド
JP4904027B2 (ja) 2005-08-10 2012-03-28 ニッタ・ハース株式会社 研磨パッド
US7210980B2 (en) 2005-08-26 2007-05-01 Applied Materials, Inc. Sealed polishing pad, system and methods
WO2007104063A1 (en) 2006-03-09 2007-09-13 Rimpad Tech Ltd. Composite polishing pad
US7235114B1 (en) 2006-03-16 2007-06-26 3M Innovative Properties Company Flexible abrasive article
US8083820B2 (en) 2006-12-22 2011-12-27 3M Innovative Properties Company Structured fixed abrasive articles including surface treated nano-ceria filler, and method for making and using the same
JP2008226911A (ja) * 2007-03-08 2008-09-25 Jsr Corp 化学機械研磨用パッド、化学機械研磨用積層体パッド、および化学機械研磨方法
US8562389B2 (en) 2007-06-08 2013-10-22 Applied Materials, Inc. Thin polishing pad with window and molding process
JP2009060044A (ja) 2007-09-03 2009-03-19 Tokyo Seimitsu Co Ltd Ｃｍｐ装置の研磨モニタ窓
US9011563B2 (en) 2007-12-06 2015-04-21 Chien-Min Sung Methods for orienting superabrasive particles on a surface and associated tools
JP2010029996A (ja) 2008-07-30 2010-02-12 Toray Ind Inc 研磨パッド
US8157614B2 (en) * 2009-04-30 2012-04-17 Applied Materials, Inc. Method of making and apparatus having windowless polishing pad and protected fiber
WO2011008499A2 (en) * 2009-06-30 2011-01-20 Applied Materials, Inc. Leak proof pad for cmp endpoint detection
US8393940B2 (en) * 2010-04-16 2013-03-12 Applied Materials, Inc. Molding windows in thin pads
CN101905448B (zh) * 2010-06-23 2013-05-22 清华大学 一种用于化学机械平坦化的抛光垫及其制造方法
US9156124B2 (en) 2010-07-08 2015-10-13 Nexplanar Corporation Soft polishing pad for polishing a semiconductor substrate
US20120302148A1 (en) 2011-05-23 2012-11-29 Rajeev Bajaj Polishing pad with homogeneous body having discrete protrusions thereon
US8920219B2 (en) 2011-07-15 2014-12-30 Nexplanar Corporation Polishing pad with alignment aperture
US9067297B2 (en) 2011-11-29 2015-06-30 Nexplanar Corporation Polishing pad with foundation layer and polishing surface layer
SG11201402224WA (en) 2011-11-29 2014-09-26 Nexplanar Corp Polishing pad with foundation layer and polishing surface layer
US9067298B2 (en) 2011-11-29 2015-06-30 Nexplanar Corporation Polishing pad with grooved foundation layer and polishing surface layer

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1306163A1 (en) * 2001-10-26 2003-05-02 JSR Corporation Window member for chemical mechanical polishing and polishing pad
TWI221105B (en) * 2002-05-13 2004-09-21 Jsr Corp Polishing pad for semiconductor wafer, polishing laminate comprising the same for semiconductor wafer, and method for polishing semiconductor wafer
CN1805826A (zh) * 2003-06-17 2006-07-19 卡博特微电子公司 用于化学机械抛光的多层抛光垫材料
CN101107095A (zh) * 2005-01-26 2008-01-16 应用材料股份有限公司 用于低压研磨的多层研磨垫
CN101184582A (zh) * 2005-04-25 2008-05-21 卡伯特微电子公司 用于化学机械抛光的多层抛光垫材料
CN101443157A (zh) * 2006-05-17 2009-05-27 东洋橡胶工业株式会社 抛光垫
CN101636247A (zh) * 2007-03-15 2010-01-27 东洋橡胶工业株式会社 研磨垫

Also Published As

Publication number Publication date
US20130324020A1 (en) 2013-12-05
SG10201602018WA (en) 2016-04-28
TWI554364B (zh) 2016-10-21
EP2872291B1 (en) 2017-08-09
JP2016074086A (ja) 2016-05-12
JP2015517926A (ja) 2015-06-25
TW201404532A (zh) 2014-02-01
CN104520068A (zh) 2015-04-15
JP6209628B2 (ja) 2017-10-04
KR20160068977A (ko) 2016-06-15
SG11201407839PA (en) 2014-12-30
JP5908169B2 (ja) 2016-04-26
TW201625381A (zh) 2016-07-16
WO2013184465A1 (en) 2013-12-12
TWI634968B (zh) 2018-09-11
KR20160036083A (ko) 2016-04-01
KR101729610B1 (ko) 2017-04-24
KR20150021540A (ko) 2015-03-02
EP2872291A1 (en) 2015-05-20
KR101700863B1 (ko) 2017-01-31
US9597769B2 (en) 2017-03-21
KR101655432B1 (ko) 2016-09-07

Similar Documents

Publication Publication Date Title
CN104520068B (zh) 具有位于透明基层上方的包括孔口或开口的抛光表面层的抛光垫
US9931728B2 (en) Polishing pad with foundation layer and polishing surface layer
US9296085B2 (en) Polishing pad with homogeneous body having discrete protrusions thereon
CN105773400B (zh) 具有基层和抛光表面层的抛光垫
US9931729B2 (en) Polishing pad with grooved foundation layer and polishing surface layer
US8920219B2 (en) Polishing pad with alignment aperture

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20170712

Address after: Illinois State

Applicant after: Cabot Microelectronics Corp.

Address before: oregon

Applicant before: NEXPLANAR Corp.

GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Illinois, USA

Patentee after: CMC materials Co.

Address before: Illinois, USA

Patentee before: Cabot Microelectronics Corp.

CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Illinois, USA

Patentee after: CMC Materials Co.,Ltd.

Address before: Illinois, USA

Patentee before: CMC materials Co.

CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Illinois, America

Patentee after: CMC Materials Co.,Ltd.

Address before: Illinois, America

Patentee before: CMC Materials Co.,Ltd.