CN104465940B - 发光器件封装件 - Google Patents

发光器件封装件 Download PDF

Info

Publication number
CN104465940B
CN104465940B CN201410469502.9A CN201410469502A CN104465940B CN 104465940 B CN104465940 B CN 104465940B CN 201410469502 A CN201410469502 A CN 201410469502A CN 104465940 B CN104465940 B CN 104465940B
Authority
CN
China
Prior art keywords
light emitting
emitting device
layer
packaging piece
piece according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410469502.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN104465940A (zh
Inventor
金伯俊
小平洋
金炳穆
金夏罹
大关聪司
反田祐郎
反田祐一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR20130111281A external-priority patent/KR20150031719A/ko
Priority claimed from KR20130111278A external-priority patent/KR20150031717A/ko
Priority claimed from KR20130111280A external-priority patent/KR20150031718A/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN104465940A publication Critical patent/CN104465940A/zh
Application granted granted Critical
Publication of CN104465940B publication Critical patent/CN104465940B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages

Landscapes

  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Devices (AREA)
CN201410469502.9A 2013-09-16 2014-09-15 发光器件封装件 Active CN104465940B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR10-2013-0111281 2013-09-16
KR20130111281A KR20150031719A (ko) 2013-09-16 2013-09-16 발광소자 패키지
KR10-2013-0111278 2013-09-16
KR20130111278A KR20150031717A (ko) 2013-09-16 2013-09-16 발광소자 패키지
KR20130111280A KR20150031718A (ko) 2013-09-16 2013-09-16 발광소자 패키지
KR10-2013-0111280 2013-09-16

Publications (2)

Publication Number Publication Date
CN104465940A CN104465940A (zh) 2015-03-25
CN104465940B true CN104465940B (zh) 2019-04-19

Family

ID=51539188

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410469502.9A Active CN104465940B (zh) 2013-09-16 2014-09-15 发光器件封装件

Country Status (4)

Country Link
US (1) US9887324B2 (enExample)
EP (1) EP2849237B8 (enExample)
JP (1) JP6490932B2 (enExample)
CN (1) CN104465940B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9887324B2 (en) * 2013-09-16 2018-02-06 Lg Innotek Co., Ltd. Light emitting device package
WO2017038961A1 (ja) * 2015-09-03 2017-03-09 丸文株式会社 深紫外ｌｅｄ及びその製造方法
JP6915236B2 (ja) * 2016-06-29 2021-08-04 セイコーエプソン株式会社 光源装置およびプロジェクター
JP7131933B2 (ja) * 2018-03-15 2022-09-06 株式会社東芝 半導体装置用パッケージおよび半導体装置
CN118399197A (zh) * 2018-05-11 2024-07-26 Lg伊诺特有限公司 表面发射激光器封装件和包括其的发光装置
US11978839B2 (en) * 2019-02-03 2024-05-07 Quanzhou Sanan Semiconductor Technology Co., Ltd. Light-emitting device
CN112086547A (zh) * 2019-06-13 2020-12-15 光宝光电(常州)有限公司 发光二极管封装结构
DE102021109968A1 (de) 2021-04-20 2022-10-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement
CN113725345A (zh) * 2021-08-26 2021-11-30 广东工业大学 一种双面微透镜阵列制备方法及紫外led封装装置
TWI797845B (zh) * 2021-11-24 2023-04-01 財團法人工業技術研究院 封裝散熱結構及包含其的晶片
KR102708838B1 (ko) * 2022-12-08 2024-09-24 한국전자기술연구원 Rf 전치단 모듈 패키지

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102163675A (zh) * 2010-02-01 2011-08-24 Lg伊诺特有限公司 发光器件
CN102696123A (zh) * 2010-01-07 2012-09-26 首尔半导体株式会社 非球面led透镜及包括该透镜的发光装置
CN103078033A (zh) * 2011-08-22 2013-05-01 Lg伊诺特有限公司 发光器件封装件、光源模块以及包括它们的照明系统

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07131075A (ja) * 1993-10-28 1995-05-19 Kyocera Corp 画像装置
JP2000164836A (ja) * 1998-11-25 2000-06-16 Nikon Corp 固体撮像装置等の半導体装置の製造方法
DE19955747A1 (de) * 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
JP2002076434A (ja) * 2000-08-28 2002-03-15 Toyoda Gosei Co Ltd 発光装置
KR20110025236A (ko) * 2002-12-25 2011-03-09 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 발광소자장치, 수광소자장치, 광학장치, 플루오르화물 결정, 플루오르화물 결정의 제조방법 및 도가니
DE10308866A1 (de) * 2003-02-28 2004-09-09 Osram Opto Semiconductors Gmbh Beleuchtungsmodul und Verfahren zu dessen Herstellung
WO2004102685A1 (en) * 2003-05-14 2004-11-25 Nano Packaging Technology, Inc. Light emitting device, package structure thereof and manufacturing method thereof
JP2005175039A (ja) * 2003-12-09 2005-06-30 Kenichiro Miyahara 発光素子搭載用基板及び発光素子
JP2006013237A (ja) * 2004-06-28 2006-01-12 Toshiba Lighting & Technology Corp 発光装置
JP4591071B2 (ja) * 2004-12-20 2010-12-01 日亜化学工業株式会社 半導体装置
US20060138443A1 (en) * 2004-12-23 2006-06-29 Iii-N Technology, Inc. Encapsulation and packaging of ultraviolet and deep-ultraviolet light emitting diodes
US7045375B1 (en) * 2005-01-14 2006-05-16 Au Optronics Corporation White light emitting device and method of making same
JPWO2006090834A1 (ja) * 2005-02-24 2008-07-24 京セラ株式会社 発光装置および照明装置
DE202005007500U1 (de) 2005-05-12 2005-07-21 Zweibrüder Optoelectronics GmbH Taschenlampe
US7354197B2 (en) * 2005-06-01 2008-04-08 Endicott Interconnect Technologies, Inc. Imaging inspection apparatus with improved cooling
JP4822499B2 (ja) * 2005-06-03 2011-11-24 シチズン電子株式会社 チップ型ｌｅｄ
CN100565948C (zh) * 2005-06-30 2009-12-02 松下电工株式会社 发光装置
KR100723247B1 (ko) 2006-01-10 2007-05-29 삼성전기주식회사 칩코팅형 ｌｅｄ 패키지 및 그 제조방법
JP4996101B2 (ja) * 2006-02-02 2012-08-08 新光電気工業株式会社 半導体装置及び半導体装置の製造方法
JP2007250817A (ja) * 2006-03-16 2007-09-27 Stanley Electric Co Ltd Ｌｅｄ
JP2008112959A (ja) * 2006-10-04 2008-05-15 Nippon Electric Glass Co Ltd 発光ダイオード素子及び発光ダイオード装置
JP5130730B2 (ja) * 2007-02-01 2013-01-30 日亜化学工業株式会社 半導体発光素子
JP2008277626A (ja) * 2007-05-01 2008-11-13 Nec Lighting Ltd 発光デバイス及びその製造方法
US8368114B2 (en) 2007-05-18 2013-02-05 Chiuchung Yang Flip chip LED die and array thereof
JP2009076749A (ja) * 2007-09-21 2009-04-09 Toyoda Gosei Co Ltd Ｌｅｄ装置及びその製造方法
JP5100301B2 (ja) * 2007-10-16 2012-12-19 京セラ株式会社 発光装置
JP4457142B2 (ja) * 2007-10-17 2010-04-28 シャープ株式会社 固体撮像素子、カメラモジュールおよび電子情報機器
US9086213B2 (en) * 2007-10-17 2015-07-21 Xicato, Inc. Illumination device with light emitting diodes
US7984999B2 (en) * 2007-10-17 2011-07-26 Xicato, Inc. Illumination device with light emitting diodes and moveable light adjustment member
JP2010074117A (ja) * 2007-12-07 2010-04-02 Panasonic Electric Works Co Ltd 発光装置
JP5243806B2 (ja) * 2008-01-28 2013-07-24 パナソニック株式会社 紫外光発光装置
JP5648235B2 (ja) * 2008-08-08 2015-01-07 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． Ｌｅｄ装置
JP5254744B2 (ja) * 2008-10-31 2013-08-07 株式会社エンプラス 照明用レンズおよびこれを備えた照明装置
JP5377985B2 (ja) * 2009-01-13 2013-12-25 株式会社東芝 半導体発光素子
US9048404B2 (en) * 2009-07-06 2015-06-02 Zhuo Sun Thin flat solid state light source module
KR101716919B1 (ko) * 2009-07-30 2017-03-15 니치아 카가쿠 고교 가부시키가이샤 발광 장치 및 그 제조 방법
KR20110080514A (ko) 2010-01-06 2011-07-13 엘지이노텍 주식회사 백라이트 유닛 및 이를 이용한 디스플레이 장치
US8283681B2 (en) 2010-03-30 2012-10-09 Sanyo Electric Co., Ltd. Lighting device and method of manufacturing the same
JP5617372B2 (ja) * 2010-06-21 2014-11-05 コニカミノルタ株式会社 反りを抑えた基板、それを用いた発光装置及びそれらの製造方法
KR20120009942A (ko) 2010-07-22 2012-02-02 엘지디스플레이 주식회사 발광소자 패키지 및 그 제조방법
US8297767B2 (en) * 2010-09-07 2012-10-30 Xicato, Inc. LED-based illumination modules with PTFE color converting surfaces
JP5886584B2 (ja) 2010-11-05 2016-03-16 ローム株式会社 半導体発光装置
KR101789825B1 (ko) 2011-04-20 2017-11-20 엘지이노텍 주식회사 자외선 발광 다이오드를 이용한 발광소자 패키지
JP2012238830A (ja) * 2011-05-09 2012-12-06 Lumirich Co Ltd 発光ダイオード素子
TW201246615A (en) * 2011-05-11 2012-11-16 Siliconware Precision Industries Co Ltd Package structure and method of making same
KR101850432B1 (ko) 2011-07-11 2018-04-19 엘지이노텍 주식회사 발광 모듈
EP2562834B1 (en) 2011-08-22 2019-12-25 LG Innotek Co., Ltd. Light emitting diode package
US9562171B2 (en) 2011-09-22 2017-02-07 Sensor Electronic Technology, Inc. Ultraviolet device encapsulant
JP2013069620A (ja) 2011-09-26 2013-04-18 Stanley Electric Co Ltd 多点出射型レンズ及びこれを用いたレンズアレイ
JP2012069977A (ja) * 2011-11-08 2012-04-05 Citizen Electronics Co Ltd 発光装置及び発光装置の製造方法
KR101310107B1 (ko) 2011-12-22 2013-09-23 한국세라믹기술원 Ｕｖｌｅｄ 소자용 봉지재, 그를 이용한 ｕｖｌｅｄ 소자 및 그의 제조 방법
KR20130081171A (ko) 2012-01-06 2013-07-16 한수진 광균일도 및 광손실을 최적화할 수 있는 엘이디 광원용 렌즈
KR20140095163A (ko) * 2013-01-23 2014-08-01 삼성전자주식회사 발광소자용 렌즈와 이를 이용한 발광소자 패키지
US20150054017A1 (en) * 2013-08-20 2015-02-26 Prolight Opto Technology Corporation Led chip package
US9887324B2 (en) * 2013-09-16 2018-02-06 Lg Innotek Co., Ltd. Light emitting device package

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102696123A (zh) * 2010-01-07 2012-09-26 首尔半导体株式会社 非球面led透镜及包括该透镜的发光装置
CN102163675A (zh) * 2010-02-01 2011-08-24 Lg伊诺特有限公司 发光器件
CN103078033A (zh) * 2011-08-22 2013-05-01 Lg伊诺特有限公司 发光器件封装件、光源模块以及包括它们的照明系统

Also Published As

Publication number Publication date
EP2849237A1 (en) 2015-03-18
EP2849237B1 (en) 2017-05-03
JP2015057826A (ja) 2015-03-26
CN104465940A (zh) 2015-03-25
US20150102375A1 (en) 2015-04-16
EP2849237B8 (en) 2017-07-12
US9887324B2 (en) 2018-02-06
JP6490932B2 (ja) 2019-03-27

Similar Documents

Publication Publication Date Title
CN104465940B (zh) 发光器件封装件
CN102751432B (zh) 包括uv发光二极管的发光器件封装
TWI489655B (zh) 發光裝置封裝件及照明系統
JP2019117939A (ja) 発光素子パッケージ
KR102080778B1 (ko) 발광 소자 패키지
US9252340B2 (en) Phosphor and light emitting device package including the same
CN106972013A (zh) 用于紫外发射装置的封装
CN109390451A (zh) 发光器件封装件
KR20130022052A (ko) 발광소자 패키지 및 조명 장치
US9897298B2 (en) Light emitting module and light unit having the same
US12015111B2 (en) Light emitting device package and light source module
KR102220501B1 (ko) 발광 소자 패키지
KR20160094213A (ko) 발광 소자 패키지 및 조명 장치
KR20150029920A (ko) 발광 소자 및 발광 소자 패키지
KR20200134465A (ko) 발광소자 패키지, 광원장치 및 발광소자 패키지 제조방법
KR102024296B1 (ko) 발광소자 패키지
KR20150019490A (ko) 발광소자 모듈
KR20160093945A (ko) 형광체 필름, 이를 포함하는 발광 소자 패키지 및 조명 장치
KR20160007195A (ko) 발광 소자 패키지
KR20150031719A (ko) 발광소자 패키지
KR20150031718A (ko) 발광소자 패키지
KR20150031717A (ko) 발광소자 패키지
KR20150031715A (ko) 발광소자 패키지
KR20120061065A (ko) 발광 소자 및 그 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20210823

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

TR01 Transfer of patent right
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CP03 Change of name, title or address