CN104409334A - 一种超结器件的制备方法 - Google Patents
一种超结器件的制备方法 Download PDFInfo
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- CN104409334A CN104409334A CN201410623747.2A CN201410623747A CN104409334A CN 104409334 A CN104409334 A CN 104409334A CN 201410623747 A CN201410623747 A CN 201410623747A CN 104409334 A CN104409334 A CN 104409334A
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- 238000000034 method Methods 0.000 title abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 14
- 238000005468 ion implantation Methods 0.000 claims abstract description 14
- 238000002360 preparation method Methods 0.000 claims description 26
- 239000011241 protective layer Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 22
- 238000005516 engineering process Methods 0.000 claims description 13
- 239000010410 layer Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000000407 epitaxy Methods 0.000 abstract description 7
- 238000000137 annealing Methods 0.000 abstract description 3
- 210000002858 crystal cell Anatomy 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000026267 regulation of growth Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000008280 blood Substances 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410623747.2A CN104409334B (zh) | 2014-11-06 | 2014-11-06 | 一种超结器件的制备方法 |
Applications Claiming Priority (1)
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CN201410623747.2A CN104409334B (zh) | 2014-11-06 | 2014-11-06 | 一种超结器件的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN104409334A true CN104409334A (zh) | 2015-03-11 |
CN104409334B CN104409334B (zh) | 2017-06-16 |
Family
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CN201410623747.2A Active CN104409334B (zh) | 2014-11-06 | 2014-11-06 | 一种超结器件的制备方法 |
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CN (1) | CN104409334B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106328532A (zh) * | 2015-07-02 | 2017-01-11 | 北大方正集团有限公司 | 一种超结器件外延片的制作方法及结构 |
CN107045973A (zh) * | 2017-03-16 | 2017-08-15 | 上海华虹宏力半导体制造有限公司 | 沟槽型超级结的制造方法 |
CN107275389A (zh) * | 2017-06-30 | 2017-10-20 | 上海华虹宏力半导体制造有限公司 | 超级结的沟槽填充方法 |
CN109103077A (zh) * | 2018-08-30 | 2018-12-28 | 深圳基本半导体有限公司 | 离子注入方法及掩膜层结构 |
CN117476468A (zh) * | 2023-12-26 | 2024-01-30 | 北京智芯微电子科技有限公司 | 超结结构及其制造方法、超结半导体器件和半导体结构 |
Citations (10)
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US6439581B1 (en) * | 1999-04-22 | 2002-08-27 | Chia-Bo Chang | Sealing structure for a mixing valve of hot and cool water |
US20070148931A1 (en) * | 2005-12-26 | 2007-06-28 | Kabushiki Kaisha Toshiba | Semiconductor device and method of fabricating the same |
CN101414553A (zh) * | 2007-09-27 | 2009-04-22 | 三洋电机株式会社 | 半导体晶片及其制造方法 |
JP4304034B2 (ja) * | 2002-10-18 | 2009-07-29 | 富士電機ホールディングス株式会社 | 超接合半導体素子の製造方法 |
CN102130161A (zh) * | 2010-01-19 | 2011-07-20 | 中芯国际集成电路制造(上海)有限公司 | 功率场效应管及其制造方法 |
CN102208414A (zh) * | 2010-03-31 | 2011-10-05 | 力士科技股份有限公司 | 一种超结沟槽金属氧化物半导体场效应管及其制造方法 |
CN102254796A (zh) * | 2010-05-20 | 2011-11-23 | 上海华虹Nec电子有限公司 | 形成交替排列的p型和n型半导体薄层的方法 |
CN102376533A (zh) * | 2010-08-26 | 2012-03-14 | 上海华虹Nec电子有限公司 | 交替排列的p型和n型半导体薄层结构的制作方法及器件 |
CN102468169A (zh) * | 2010-11-01 | 2012-05-23 | 中芯国际集成电路制造(上海)有限公司 | Umos晶体管及其形成方法 |
CN102623350A (zh) * | 2012-04-11 | 2012-08-01 | 无锡新洁能功率半导体有限公司 | 具有超结结构的半导体器件的制造方法 |
-
2014
- 2014-11-06 CN CN201410623747.2A patent/CN104409334B/zh active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6439581B1 (en) * | 1999-04-22 | 2002-08-27 | Chia-Bo Chang | Sealing structure for a mixing valve of hot and cool water |
JP4304034B2 (ja) * | 2002-10-18 | 2009-07-29 | 富士電機ホールディングス株式会社 | 超接合半導体素子の製造方法 |
US20070148931A1 (en) * | 2005-12-26 | 2007-06-28 | Kabushiki Kaisha Toshiba | Semiconductor device and method of fabricating the same |
CN101414553A (zh) * | 2007-09-27 | 2009-04-22 | 三洋电机株式会社 | 半导体晶片及其制造方法 |
CN102130161A (zh) * | 2010-01-19 | 2011-07-20 | 中芯国际集成电路制造(上海)有限公司 | 功率场效应管及其制造方法 |
CN102208414A (zh) * | 2010-03-31 | 2011-10-05 | 力士科技股份有限公司 | 一种超结沟槽金属氧化物半导体场效应管及其制造方法 |
CN102254796A (zh) * | 2010-05-20 | 2011-11-23 | 上海华虹Nec电子有限公司 | 形成交替排列的p型和n型半导体薄层的方法 |
CN102376533A (zh) * | 2010-08-26 | 2012-03-14 | 上海华虹Nec电子有限公司 | 交替排列的p型和n型半导体薄层结构的制作方法及器件 |
CN102468169A (zh) * | 2010-11-01 | 2012-05-23 | 中芯国际集成电路制造(上海)有限公司 | Umos晶体管及其形成方法 |
CN102623350A (zh) * | 2012-04-11 | 2012-08-01 | 无锡新洁能功率半导体有限公司 | 具有超结结构的半导体器件的制造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106328532A (zh) * | 2015-07-02 | 2017-01-11 | 北大方正集团有限公司 | 一种超结器件外延片的制作方法及结构 |
CN106328532B (zh) * | 2015-07-02 | 2020-06-09 | 北大方正集团有限公司 | 一种超结器件外延片的制作方法及结构 |
CN107045973A (zh) * | 2017-03-16 | 2017-08-15 | 上海华虹宏力半导体制造有限公司 | 沟槽型超级结的制造方法 |
CN107275389A (zh) * | 2017-06-30 | 2017-10-20 | 上海华虹宏力半导体制造有限公司 | 超级结的沟槽填充方法 |
CN109103077A (zh) * | 2018-08-30 | 2018-12-28 | 深圳基本半导体有限公司 | 离子注入方法及掩膜层结构 |
CN117476468A (zh) * | 2023-12-26 | 2024-01-30 | 北京智芯微电子科技有限公司 | 超结结构及其制造方法、超结半导体器件和半导体结构 |
CN117476468B (zh) * | 2023-12-26 | 2024-03-22 | 北京智芯微电子科技有限公司 | 超结结构及其制造方法、超结半导体器件和半导体结构 |
Also Published As
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CN104409334B (zh) | 2017-06-16 |
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Address after: 401331 No. 25 Xiyong Avenue, Xiyong Town, Shapingba District, Chongqing Patentee after: Huarun Microelectronics (Chongqing) Co., Ltd. Address before: 401331 No. 25 Xiyong Avenue, Xiyong Town, Shapingba District, Chongqing Patentee before: China Aviation (Chongqing) Microelectronics Co., Ltd. |
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CP02 | Change in the address of a patent holder |
Address after: 401331 No. 25 Xiyong Avenue, Shapingba District, Chongqing Patentee after: Huarun Microelectronics (Chongqing) Co., Ltd. Address before: 401331 No. 25 Xiyong Avenue, Xiyong Town, Shapingba District, Chongqing Patentee before: Huarun Microelectronics (Chongqing) Co., Ltd. |