CN104396026B - 光源一体型光传感器 - Google Patents

光源一体型光传感器 Download PDF

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Publication number
CN104396026B
CN104396026B CN201380032199.XA CN201380032199A CN104396026B CN 104396026 B CN104396026 B CN 104396026B CN 201380032199 A CN201380032199 A CN 201380032199A CN 104396026 B CN104396026 B CN 104396026B
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CN
China
Prior art keywords
mentioned
light
resin
light source
optical sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201380032199.XA
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English (en)
Chinese (zh)
Other versions
CN104396026A (zh
Inventor
真崎伸
真崎伸一
井上修二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aoi Electronics Co Ltd
Original Assignee
Aoi Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aoi Electronics Co Ltd filed Critical Aoi Electronics Co Ltd
Publication of CN104396026A publication Critical patent/CN104396026A/zh
Application granted granted Critical
Publication of CN104396026B publication Critical patent/CN104396026B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
    • G01S7/4813—Housing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Device Packages (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
CN201380032199.XA 2012-06-20 2013-06-20 光源一体型光传感器 Expired - Fee Related CN104396026B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2012-138589 2012-06-20
JP2012138589 2012-06-20
PCT/JP2013/057074 WO2013190871A1 (ja) 2012-06-20 2013-03-13 光源一体型光センサ
JPPCT/JP2013/057074 2013-03-13
PCT/JP2013/066919 WO2013191235A1 (ja) 2012-06-20 2013-06-20 光源一体型光センサ

Publications (2)

Publication Number Publication Date
CN104396026A CN104396026A (zh) 2015-03-04
CN104396026B true CN104396026B (zh) 2017-06-30

Family

ID=49768480

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380032199.XA Expired - Fee Related CN104396026B (zh) 2012-06-20 2013-06-20 光源一体型光传感器

Country Status (4)

Country Link
JP (2) JP6133287B2 (ja)
CN (1) CN104396026B (ja)
TW (1) TWI581449B (ja)
WO (2) WO2013190871A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6679306B2 (ja) * 2015-12-28 2020-04-15 シャープ株式会社 発光素子の製造方法
JP6620176B2 (ja) * 2018-01-29 2019-12-11 アオイ電子株式会社 半導体装置
JP7420725B2 (ja) 2018-08-31 2024-01-23 ソニーセミコンダクタソリューションズ株式会社 発光装置および表示装置
CN111341768B (zh) * 2020-03-06 2022-01-11 弘凯光电(深圳)有限公司 一种传感模组

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101936752A (zh) * 2009-06-30 2011-01-05 安华高科技Ecbuip(新加坡)私人有限公司 光学接近传感器封装

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118755U (ja) * 1982-02-04 1983-08-13 オムロン株式会社 半導体撮像素子の実装構造
JPS61204989A (ja) * 1985-03-08 1986-09-11 Toshiba Corp 半導体光電変換装置
JPS6285479A (ja) * 1985-10-11 1987-04-18 Toshiba Corp 半導体受発光複合装置
US5912872A (en) * 1996-09-27 1999-06-15 Digital Optics Corporation Integrated optical apparatus providing separated beams on a detector and associated methods
JPH11289105A (ja) * 1998-04-03 1999-10-19 Citizen Electronics Co Ltd フォトリフレクタとその製造方法
JP4330742B2 (ja) * 1999-12-24 2009-09-16 シチズン電子株式会社 表面実装型赤外線通信モジュールの構造および駆動回路
JP2001308372A (ja) * 2000-04-18 2001-11-02 Citizen Electronics Co Ltd 反射型光センサ
JP2004071734A (ja) * 2002-08-05 2004-03-04 New Japan Radio Co Ltd 受発光素子の製造方法
TW560027B (en) * 2002-08-29 2003-11-01 Tung-An Chen LED package with inserted metal cup
JP2005044861A (ja) * 2003-07-23 2005-02-17 Seiko Epson Corp 半導体装置、半導体装置の使用方法、半導体装置の製造方法および電子機器
JP2005340727A (ja) * 2004-05-31 2005-12-08 New Japan Radio Co Ltd 受発光素子の製造方法
US7456499B2 (en) * 2004-06-04 2008-11-25 Cree, Inc. Power light emitting die package with reflecting lens and the method of making the same
JP4349978B2 (ja) * 2004-06-17 2009-10-21 シチズン電子株式会社 光半導体パッケージ及びその製造方法
TWM274648U (en) * 2004-07-02 2005-09-01 Li-Jie Huang Light emission device that have the function of heat dissipation
JP4413707B2 (ja) * 2004-08-16 2010-02-10 ポリプラスチックス株式会社 多層構造を持つ放熱性樹脂成形品
JPWO2006095834A1 (ja) * 2005-03-09 2008-08-21 旭化成エレクトロニクス株式会社 光デバイス及び光デバイスの製造方法
JP2007042881A (ja) * 2005-08-03 2007-02-15 Sharp Corp 赤外線通信デバイス
JP2008010832A (ja) * 2006-06-01 2008-01-17 Nippon Telegr & Teleph Corp <Ntt> 光学センサ、センサチップ及び生体情報測定装置
US8471283B2 (en) * 2008-02-25 2013-06-25 Kabushiki Kaisha Toshiba White LED lamp, backlight, light emitting device, display device and illumination device
JP5105483B2 (ja) * 2008-09-19 2012-12-26 古河スカイ株式会社 樹脂被覆アルミニウム板
TWM356225U (en) * 2008-10-24 2009-05-01 Solidlite Corp LED lead-frame structure having better heat dissipation effect
JP2010114196A (ja) * 2008-11-05 2010-05-20 Rohm Co Ltd 反射型フォトインタラプタ
JP4699551B2 (ja) * 2009-11-02 2011-06-15 シャープ株式会社 光ポインティング装置およびそれを備える電子機器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101936752A (zh) * 2009-06-30 2011-01-05 安华高科技Ecbuip(新加坡)私人有限公司 光学接近传感器封装

Also Published As

Publication number Publication date
TWI581449B (zh) 2017-05-01
JP6312872B2 (ja) 2018-04-18
WO2013190871A1 (ja) 2013-12-27
TW201401541A (zh) 2014-01-01
JP6133287B2 (ja) 2017-05-24
CN104396026A (zh) 2015-03-04
JP2017098571A (ja) 2017-06-01
JPWO2013191235A1 (ja) 2016-05-26
WO2013191235A1 (ja) 2013-12-27

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