CN104396011B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN104396011B
CN104396011B CN201380033792.6A CN201380033792A CN104396011B CN 104396011 B CN104396011 B CN 104396011B CN 201380033792 A CN201380033792 A CN 201380033792A CN 104396011 B CN104396011 B CN 104396011B
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Prior art keywords
lead frame
island portion
semiconductor element
semiconductor device
island
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CN201380033792.6A
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CN104396011A (zh
Inventor
池内宏树
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Abstract

在将与逆变器模块的P、U及N输出电极分别连接的铜电极棒彼此靠近并配置于芯片的上表面的现有结构中，未充分实现降低不需要的电感分量的目的。半导体装置包括：第1引线框(1)；第2引线框(2)；配置于第1引线框(1)与第2引线框(2)之间的第2绝缘树脂(8)；半导体元件(4a)和(4b)；将第1引线框(1)和第2引线框(2)进行密封的密封树脂(9)；将半导体元件(4a)和(4b)、与第1引线框(1)电连接的电布线部(5)；以及将第1引线框(1)和第2引线框(2)电连接的层间连接部(6)。

Description

半导体装置
技术领域
本发明涉及用于例如逆变器等功率转换装置的半导体装置。
背景技术
首先，主要参照图7～图10，对现有逆变器的结构进行说明。
另外，图7是现有逆变器的示意性主电路图。
此外，图8是现有的具有2个元件的逆变器模块的示意性外观图。
此外，图9是现有的具有2个元件的逆变器模块的示意性剖视图。
此外，图10是现有的具有2个元件的逆变器模块的示意性内部等效电路图。
图7所示逆变器包括：商用交流电源101；将交流转换成直流的二极管整流器模块102；大电容的电容器103；具有U相、V相及W相电极的3相电动机等负载104；以及将直流转换成交流的逆变器模块105，其具有IGBT(绝缘栅双极型晶体管)芯片106和FWD(续流二极管)芯片107等功率半导体元件。
FWD芯片107和IGBT芯片106反并联连接，逆变器模块105由将FWD芯片107和IGBT芯片106反并联连接的6臂(6个电路)构成。
通常，逆变器模块105将上下臂的2个元件作为1组，或者将6个元件作为1组。
因而，在构成逆变器的情况下，并联连接3个具有2个元件的逆变器模块来使用，或者直接使用具有6个元件的逆变器模块。
图8所示的具有2个元件的逆变器模块包括：直流的P输出电极(正侧电源电位输出电极)108和N输出电极(负侧电源电位输出电极)109、与负载侧相连接的U输出电极110、以及上下臂的IGBT芯片的栅极端子111和113、以及发射极端子112和114。
此外，图9所示的具有2个元件的逆变器模块包括：铜基底基板115；绝缘用陶瓷基板116；布线及半导体芯片连接用铜图案117、118和119；上下臂的IGBT芯片120和121；用于将IGBT芯片120和121与铜图案118和119分别进行连接的电极122和123；以及用于将铜图案117、118和119与P、U和N输出电极分别进行连接的铜电极棒124、125和126。
另外，FWD芯片(省略图示)也与IGBT芯片120和121同样地进行搭载。
如图10所示，电感器127提供上壁的集电极端子与P输出电极之间的电感L1，电感器128提供上壁的发射极端子与连接点129之间的、即铜图案118(参照图9)与铜电极棒125(参照图9)之间的电感L2，电感器130提供连接点129与下臂的集电极端子之间的电感L3，电感器131提供下臂的发射极端子与N输出电极之间的电感L4。
接着，主要参照图11，对现有逆变器的动作进行说明。
另外，图11是现有的逆变器模块的IGBT的截止波形的示意性波形图。
通常，上述逆变器电路的运行如下：以10kHz左右对IGBT进行开关。
在IGBT截止时施加于IGBT芯片的集电极端子与发射极端子之间的峰值电压VCE(peak)(下面简单称作电压VCE)如下式那样表示。
(数学式1)
VCE＝Ed+(L1+L2+L3+L4)·di/dt
其中，Ed是电容器103(参照图7)的直流电压，di/dt是IGBT芯片的电流IC的变化率(<0)的大小。
如图11所示，IGBT芯片的电压VCE和电流IC的波形在IGBT截止时变化较大。
即，自直流电压Ed发生变化的变化量即浪涌电压ΔV(＝VCE-Ed)由L1至L4及di/dt的值来决定，可从(数学式1)得知，若L1至L4的值较大，则IGBT截止时施加的电压VCE增高。
因此，对于IGBT芯片和与其反并联连接的FWD芯片，通常需要耐高压的芯片，这种芯片通常具有较大的芯片面积，从而容易造成逆变器模块的大型化以及成本的上升。
而且，若浪涌电压较高，则对外部造成的噪声较大，容易造成外部设备的误动作。
然而，若如上所述那样将铜电极棒彼此靠近，则会产生电感分量由于互感而抵消的现象。
于是，已知如下技术(例如参照专利文献1)，即，将分别与逆变器模块的P、U及N输出电极相连接的铜电极棒彼此靠近并配置于芯片的上表面，利用互感将不需要的电感分量降低。
现有技术文献
专利文献
专利文献1：日本专利第4277169号说明书
发明内容
发明所要解决的技术问题
然而，在如上所述那样将铜电极棒彼此靠近并配置于芯片上表面的现有结构中，避开芯片来配置铜电极棒，因此，无法充分实现将不需要的电感分量降低的目的。
尤其，近年来，出现了利用SiC、GaN或GaAs等的、具有高速开关性能的逆变器等，因此，无法利用相同结构来充分降低不需要的电感分量，无法充分发挥其性能。
于是，本发明考虑了上述现有的问题，其目的在于提供能进一步降低不需要的电感分量的半导体装置。
解决技术问题所采用的技术方案
本发明的第一发明涉及半导体装置，其特征在于，包括：
搭载有第1和第2半导体元件的第1引线框；
与所述第1引线框相平行地配置的第2引线框；
配置于所述第1引线框与所述第2引线框之间的第2绝缘树脂；
将所述第1和第2半导体元件、所述第1引线框、所述第2引线框进行密封的密封树脂；
将所述第1和第2半导体元件、与所述第1引线框进行电连接的电布线部；以及
将所述第1引线框与所述第2引线框进行电连接的层间连接部。
本发明的第2发明涉及第1发明的半导体装置，其特征在于，
与所述第2引线框相平行地配置的散热板；
配置于所述第2引线框与所述散热板之间的第1绝缘树脂，
所述密封树脂将所述散热板进行密封，
所述第1引线框具有搭载所述第1半导体元件的第1岛状部、具有输出电极且搭载所述第2半导体元件的第2岛状部、以及具有正极侧外部电极和负极侧外部电极中的一方的第3岛状部，
所述第2引线框具有所述正极侧外部电极和所述负极侧外部电极中的另一方，
所述电布线部将所述第1半导体元件和所述第2岛状部进行电连接，将所述第2半导体元件和所述第3岛状部进行电连接，
所述层间连接部将所述第1岛状部和所述第2引线框进行电连接。
本发明的第3发明涉及第1或第2发明的半导体装置，其特征在于，
所述第1引线框与所述第2引线框之间的距离在50μm以上且500μm以下。
本发明的第4发明涉及第2发明的半导体装置，其特征在于，
所述第1岛状部具有矩形形状，
所述第2岛状部的、除所述输出电极以外的主体部具有矩形形状，
所述第3岛状部的、除所述正极侧外部电极和所述负极侧外部电极中的所述一方以外的主体部具有矩形形状，
所述第2引线框的、除所述正极侧外部电极和所述负极侧外部电极中的所述另一方以外的主体部具有矩形形状，
将所述第1岛状部的中心线、所述第2岛状部的主体部的中心线、所述第3岛状部的主体部的中心线、所述第2引线框的主体部的中心线、所述电布线部的中心线、以及所述层间连接部的中心线配置于同一线上，
所述第1和第2半导体元件的中心点配置于所述同一线上。
本发明的第5发明涉及第2发明的半导体装置，其特征在于，
所述电布线部具有将平板进行弯曲的形状，
所述第2岛状部的、除所述输出电极以外的主体部具有矩形形状，
所述第3岛状部的、除所述正极侧外部电极和所述负极侧外部电极中的所述一方以外的主体部具有矩形形状，
所述第2岛状部的主体部的与电流方向正交的方向上的宽度、所述第3岛状部的主体部的与电流方向正交的方向上的宽度、所述电布线部的电连接至所述第2岛状部和第3岛状部的部分的与电流方向正交的方向上的宽度相同。
本发明的第6发明涉及第2发明的半导体装置，其特征在于，
所述层间连接部具有将平板进行弯曲的形状，
所述第1岛状部具有矩形形状，
所述第1岛状部的与电流方向正交的方向上的宽度、所述层间连接部的电连接至第1岛状部的部分的与电流方向正交的方向上的宽度相同。
本发明的第7发明涉及第2发明的半导体装置，其特征在于，
是用于3相电动机用功率转换装置的半导体装置，
所述输出电极是与所述3相电动机的U相、V相和W相电极中的一个相连接的电极。
发明效果
根据本发明，能提供可进一步降低不需要的电感分量的半导体装置。
附图说明
图1中，(a)是本发明的实施方式1的半导体装置的示意性俯视图，(b)是本发明的实施方式1的半导体装置的示意性剖视图。
图2中，(a)是对本发明的实施方式1的半导体装置的制造方法的第1工序进行说明的示意性剖视图，(b)是对本发明的实施方式1的半导体装置的制造方法的第2工序进行说明的示意性剖视图，(c)是对本发明的实施方式1的半导体装置的制造方法的第3工序进行说明的示意性剖视图，(d)是对本发明的实施方式1的半导体装置的制造方法的第4工序进行说明的示意性剖视图，(e)是对本发明的实施方式1的半导体装置的制造方法的第5工序进行说明的示意性剖视图，(f)是对本发明的实施方式1的半导体装置的制造方法的第6工序进行说明的示意性剖视图。
图3中，(a)是本发明的实施方式1的电布线部的示意性局部放大俯视图，(b)是本发明的实施方式1的电布线部的示意性局部放大剖视图。
图4中，(a)是本发明的实施方式1的组装前的第1引线框的示意性俯视图，(b)是本发明的实施方式1的组装前的第2引线框的示意性俯视图，(c)是本发明的实施方式1的组装前的电布线部和层间连接部的示意性俯视图，(d)是本发明的实施方式1的组装前的半导体元件的示意性俯视图，(e)是本发明的实施方式1的组装后的第1引线框、第2引线框、电布线部和层间连接部、以及半导体元件的示意性俯视图。
图5是本发明的实施方式1的半导体装置的第1引线框与第2引线框之间的距离发生变化时的电感值的说明图。
图6是本发明中的实施方式2的半导体装置的示意性俯视图。
图7是现有逆变器的示意性主电路图。
图8是现有的具有2个元件的逆变器模块的示意性外观图。
图9是现有的具有2个元件的逆变器模块的示意性剖视图。
图10是现有的具有2个元件的逆变器模块的示意性内部等效电路图。
图11是现有的逆变器模块的IGBT的截止波形的示意性波形图。
具体实施方式
下面，参照附图来详细说明本发明的实施方式。
(实施方式1)
首先，参照图1～5，对实施方式1的半导体装置的结构和动作进行说明。
另外，图1(a)是本发明的实施方式1的半导体装置的示意性俯视图，图1(b)是本发明的实施方式1的半导体装置的示意性剖视图。
此外，图2(a)～(f)是对本发明的实施方式1的半导体装置的制造方法的第1至第6工序进行说明的示意性剖视图。
此外，图3(a)是本发明的实施方式1的电布线部5的示意性局部放大俯视图，图3(b)是本发明的实施方式1的电布线部5的示意性局部放大剖视图。
此外，图4(a)是本发明的实施方式1的组装前的第1引线框1的示意性俯视图，图4(b)是本发明的实施方式1的组装前的第2引线框2的示意性俯视图，图4(c)是本发明的实施方式1的组装前的电布线部5和层间连接部6的示意性俯视图，图4(d)是本发明的实施方式1的组装前的半导体元件4a的示意性俯视图，图4(e)是本发明的实施方式1的组装后的第1引线框1、第2引线框2、电布线部5和层间连接部6、以及半导体元件4a和4b的示意性俯视图。
此外，图5是本发明的实施方式1的半导体装置的第1引线框1与第2引线框2之间的距离Th发生变化时的电感值L的说明图。
首先，主要参照图1(a)和(b)，对本实施方式的半导体装置的结构进行说明。
本实施方式的半导体装置包括第1引线框1和第2引线框2，对于引线框，具有2层结构。
电布线部5和控制电极布线部14将半导体元件4a和4b、第1引线框1进行电连接。
层间连接部6将第1引线框1和第2引线框2进行电连接。
第1引线框1搭载有半导体元件4a和4b，并且，具有负极侧外部电极11、输出电极12、正极侧控制电极13a和负极侧控制电极13b，将这种电极露出至外部。
第2引线框2具有正极侧外部电极10，将这种电极露出至外部。
散热板3配置于与第2引线框2平行且靠近的位置。
而且，第1绝缘树脂7配置于散热板3与第2引线框2之间，散热板3与第2引线框2电绝缘，且散热板3与第2引线框2结构上固定。
密封树脂9以露出散热板3的一部分的状态下将半导体装置整体密封。
第1引线框1配置于与第2引线框2平行且靠近的位置。
而且，第2绝缘树脂8配置于第1引线框1与第2引线框2之间，第1引线框1和第2引线框2电绝缘，且第1引线框1和第2引线框2结构上固定。
其中，后述的作为距离H1或距离(最大距离)H2等而举例示出的第1引线框1与第2引线框2之间的距离(最大距离)Th在500[μm]以下且50[μm]以上。
其理由如下所述。
即，电感分量由于互感而抵消后的电感值能通过下式简单求出。
(数学式2)
L＝1.26·(Th/W)·D[nH]
其中，L为电感值[nH]，Th如上所述那样为第1引线框1与第2引线框2之间的距离[mm]，W是第1引线框1的宽度[mm]，D是第1引线框1的长度[mm]。
假设输出为10kW以下的半导体装置的W＝10[mm]且D＝50[mm]的情况下，对于Th＝0.05～2[mm]，将其计算结果在图5中示出。
对于电感值L，需要使将半导体装置动作时产生的浪涌电压ΔV也考虑在内的电压VCE(参照(数学式1))为不超过半导体元件4a和4b的耐压的值。
例如，假设半导体元件4a及4b的耐压为一般值即600[V]，若考虑以(例如系统遭受破坏的最小负载)/(能安全利用系统的最大负载)来定义的安全率，则需要将电压VCE设计成不超过480[V]。
上述那样，半导体元件4a及4b的耐压为600[V]的情况下，可认为电容器103(参照图7)的直流电压Ed为450[V]左右，因此，允许的浪涌电压ΔV为30[V](＝480[V]-450[V])左右。
其中，必须进行如下假设：IGBT等Si器件中，截止时的半导体元件4a和4b的电流变化率的大小di/dt一般为1[A/ns]左右，但在利用SiC或GaN等的高速器件中，电流变化率更大，为10[A/ns]左右。
若假设di/dt例如为10[A/ns]左右，电感值L为10[nH]左右，则浪涌电压ΔV为100[V](＝10[nH]×10[A/ns])左右，半导体元件4a和4b有可能被破坏。
于是，若将距离Th设为在500[μm](＝0.5[mm])以下，则电感值L如图5所示那样在3[nH]以下，因此，浪涌电压ΔV成为30[V](＝3[nH]×10[A/ns])以下。
因而，使第1引线框1与第2引线框2之间的距离Th在500[μm]以下。
而且，在功率半导体装置中，需要在例如1500[V]以上的高压下确保绝缘性。
于是，使第1引线框1与第2引线框2之间的距离Th在50[μm]以上。
其理由如下，若假设距离Th小于50[μm]，则难以防止第2绝缘树脂8中存在的微小缺陷和/或第1引线框1及第2引线框2的表面所存在的微小凹凸造成的绝缘破坏。
当然，下面也取相同数值，但各种数值是具体的一个示例。
接着，主要参照图4(a)～(e)，对第1引线框1、第2引线框2、电布线部5和层间连接部6以及半导体元件4a和4b的形状，进行具体说明，对它们的位置关系也进行具体说明。
第1引线框1具有图4(a)所示的形状。
第1引线框1具有第1岛状部1a、第2岛状部1b以及第3岛状部1c。第1岛状部1a搭载有半导体元件4a。第2岛状部1b具有输出电极12，且搭载有半导体元件4b。第3岛状部1c具有负极侧外部电极11。
第1岛状部1a是矩形形状。
第2岛状部1b的除输出电极12以外的主体部1bx为矩形形状。
第3岛状部1c的除负极侧外部电极11以外的主体部1cx为矩形形状。
点划线表示第1岛状部1a、主体部1bx及主体部1cx的中心线CL1，其方向与自第1岛状部1a输入的电流的流动方向相同。
第1岛状部1a以及主体部1bx和1cx的宽度W1表示与中心线CL1正交的方向上的宽度。
第2引线框2具有图4(b)所示的形状。
第2引线框2的除正极侧外部电极10以外的主体部2x为矩形形状。
点划线表示主体部2x的中心线CL2，其方向与自正极侧外部电极10输入的电流的流动方向相同。
主体部2x是经由作为绝缘层的第2绝缘树脂8与第1引线框1靠近的部分。
主体部2x的宽度W2表示与中心线CL2正交的方向上的宽度。
电布线部5和层间连接部6具有图4(c)所示的形状。
电布线部5具有部分5a和5b。部分5a将半导体元件4a和第2岛状部1b进行电连接。部分5b将半导体元件4b和第3岛状部1c进行电连接。
层间连接部6将第1岛状部1a和第2引线框2进行电连接。
点划线表示电布线部5和层间连接部6的中心线CL3，其方向与自层间连接部6输入的电流的流动方向相同。
电布线部5的最小宽度W51和最大宽度W52(>W51)以及层间连接部6的宽度W6表示与中心线CL3正交的方向上的宽度。
半导体元件4a与半导体元件4b相同，具有图4(d)所示的形状。
当然，在本实施方式中半导体元件4a和4b的形状为正方形，但也可以是例如长方形。
2条点划线表示半导体元件4a的中心线，它们通过半导体元件4a的中心点CP1。
此处，虚线为表示电布线部5的形状的假设线。
半导体元件4a的宽度W4表示与中心线CL1～CL3正交的方向上的宽度。
组装后的第1引线框1、第2引线框2、电布线部5及层间连接部6、以及半导体元件4a和4b具有图4(e)所示的位置关系。
允许宽度W4具有50％左右的距离以内的误差，如上述那样中心线和中心点全部配置于同一线上。
因此，流过第1引线框1、电布线部5及层间连接部6、以及半导体元件4a和4b的内部的电流方向与流过第2引线框2的内部的电流方向相反，因此，第1引线框1具有的电感分量与第2引线框2具有的电感分量由于互感而抵消。
接着，主要参照图3(a)及(b)，对电布线部5及层间连接部6的形状进行更具体的说明。
首先，对电布线部5的形状进行说明。
即，为了如上所述那样通过互感将电感分量抵消，优选半导体元件4a的上表面与第2引线框2的上表面之间的距离H1、以及电布线部5的上表面与第2引线框2的上表面之间的距离(最大距离)H2在50μm以上且500μm以下的结构。
然而，距离H1不得小于第1引线框1的厚度和半导体元件4a的厚度相加的距离。
而且，不仅距离H2不得小于第1引线框1的厚度和半导体元件4a的厚度相加而获得的距离，而且为了确保耐压，不得不进一步加上半导体元件4a的厚度以上的距离。
因而，难以实现上述结构。
于是，利用如下结构：电布线部5为将平板弯曲的形状，主体部1bx和1cx的宽度W1、和电连接主体部1bx和1cx的部分5a和5b的宽度W52实质上相同。
由此，用来产生互感的面积增加，因此，在电布线部5中能利用互感将电感分量抵消。
接下来，对层间连接部6的形状进行说明。
换言之，为了如上所述那样通过互感抵消电感分量，优选层间连接部6的上表面与第2引线框2的上表面之间的距离(最大距离)在50μm以上且500μm以下的结构。
然而，由于存在第1引线框1的厚度和第2绝缘树脂8的厚度，因此，仍然难以实现上述结构。
于是，利用如下结构：层间连接部6是将平板弯曲的形状，第1岛状部1a的宽度W1、和层间连接部6的电连接至第1岛状部1a的部分的宽度W6实质上相同。
由此，用来产生互感的面积增加，因此，在层间连接部6中能利用互感将电感分量抵消。
接着，对本实施方式的半导体装置的结构要素的材料等进行具体说明。
第1引线框1和第2引线框2由Cu、Al或以它们中的任一个作为主体的合金等构成。当然，可由Ag、Sn或SnBi等来处理第1引线框1和第2引线框2的一部分或全部的表面。
散热板3由Cu、Al或以它们中的任一个作为主体的合金等来构成。
半导体元件4a和4b由Si、SiC、GaN或GaAs等构成，例如为晶体管或二极管。
电布线部5和层间连接部6由Cu、Al或以它们中的任一个作为主体的合金等来构成。
第1绝缘树脂7和第2绝缘树脂8由例如将二氧化硅、AlN、Al2O3或BN等无机成分混合到环氧树脂、硅树脂或聚酰亚胺等树脂成分的公知材料来构成。第1绝缘树脂7和第2绝缘树脂8的热导率优选在2W/mK以上。其理由如下：由半导体元件4a和4b产生的热通过第1绝缘树脂7和第2绝缘树脂8这2层的绝缘树脂，因此，若假设它们的热导率小于2W/mK，则难以将半导体元件4a和4b产生的热充分地传导至散热板3。
密封树脂9例如由将无机成分混合到以环氧树脂、硅树脂或聚酰亚胺等为主体的树脂成分的公知材料来构成。
控制电极布线部14由Au、Al或Cu等构成，例如是通过将线状元件弯曲来形成的构件。
接下来，主要参照图2(a)～(f)，对本实施方式的半导体装置的制造方法进行具体说明。
(第1工序)
如图2(a)所示，将加工成希望的形状的第2绝缘树脂8层压于第2引线框2之上。
(第2工序)
如图2(b)所示，将准备好的第1引线框1配置于上述第1工序的完成物的上部。
之后，利用冲压装置施加温度和压力，然后，利用恒温槽等将第2绝缘树脂8固化。
(第3工序)
如图2(c)所示，将准备好的半导体元件4a和4b配置于上述第2工序的完成物的上部。
在半导体元件4a和4b与第1引线框1之间，例如使用如下材料：(1)以Sn、Zn、Ag及Au等中的任一个作为主体的金属材料；以及(2)以环氧树脂及硅树脂等中的任一个作为主体的树脂材料，即接合材料(省略图示)。
(第4工序)
如图2(d)所示，将准备好的电布线部5和层间连接部6配置于上述第3工序的完成物的上部。
对于半导体元件4a和4b、以及第1引线框1、电布线部5的接合，利用将板状材料弯曲来得到的夹子、将线状材料弯曲来得到的引线或将带状材料弯曲来得到的带子即可。
对于这种接合而言，(1)利用夹子的情况下，可通过焊接或导电性树脂的粘接来进行接合，但也可通过熔接、超声波接合或金属扩散接合等来进行接合，(2)利用引线或带子的情况下，可通过超声波接合来进行接合，但也可通过熔接、金属扩散接合、焊接或导电性树脂材料的粘接等来进行接合。
对于第1引线框1和第2引线框2、层间连接部6的接合，可进行与上述接合相同的接合。
(第5工序)
如图2(e)所示，将散热板3配置于上述第4工序的完成物的下部，在上述散热板3上预先层压好第1绝缘树脂7。
在接下来的第6工序中使用的密封模具内进行本工序。
(第6工序)
如图2(f)所示，通过公知的传递模塑法、利用密封树脂9，对上述第5工序的完成物进行密封。
之后，将在其上方层压好第1绝缘树脂7的散热板3固定于规定位置，然后，利用恒温槽等，将第1绝缘树脂7和密封树脂9固化。
当然，上述制造方法是具体的一个示例。
(实施方式2)
接着，主要参照图6，对实施方式2的半导体装置的结构和动作进行说明。
另外，图6是本发明实施方式2的半导体装置的示意性俯视图。
本实施方式的半导体装置的结构和动作与上述实施方式1的半导体装置的结构和动作相似。
然而，实施方式1的半导体装置搭载有2个半导体元件4a和4b，但本实施方式的半导体装置搭载有4个半导体元件20a、20b、21a和21b。
半导体元件20a和20b由Si、SiC、GaN或GaAs等构成，例如为晶体管。
半导体元件21a和21b由Si、SiC、GaN或GaAs等构成，例如是与晶体管即半导体元件20a和20b分别反并联连接的二极管。
电布线部25具有部分25a和25b。部分25a将半导体元件20a和21a与第2岛状部1b进行电连接。部分25b将半导体元件20b和21b与第3岛状部1c进行电连接。
部分25a被分割为2或进行分割，使得部分25a的与半导体元件20a和21a相接合的部分分别形成，部分25b被分割为2或进行分割，使得部分25b的与半导体元件20b和21b相接合的部分分别形成。
部分25a和25b如上那样被分割为2或进行分割，因此，电流密度的偏差降低，能更高效地通过互感将电感分量抵消。
上述实施方式1和2的半导体装置通过充分地降低不需要的电感分量来降低开关时产生的浪涌电压，因此，能使用额定电压较低的半导体元件，能构成小型且廉价的半导体装置。
而且，上述半导体装置还能降低易导致外部设备的误动作的噪声，能充分发挥出利用SiC、GaN或GaAs等的具有高速开关性能的逆变器等的性能。
另外，第1绝缘树脂7可以是第2引线框2的表面涂层，第2绝缘树脂8可以是第1引线框1和/或第2引线框2的表面涂层，第1引线框1、第2引线框2、第1绝缘树脂7和第2绝缘树脂8可以是一体。
工业上的实用性
本发明的半导体装置能更进一步降低不需要的电感分量，在实现如下目的方面较为有用：即，对于在逆变器等功率转换装置中利用的半导体装置，利用该半导体装置。
标号说明
1 第1引线框
2 第2引线框
3 散热板
4a、4b 半导体元件
5 电布线部
6 层间连接部
7 第1绝缘树脂
8 第2绝缘树脂
9 密封树脂
10 正极侧外部电极
11 负极侧外部电极
12 输出电极
13a 正极侧控制电极
13b 负极侧控制电极
14 控制电极布线部

Claims (6)

1.一种半导体装置，其特征在于，包括：
搭载有第1和第2半导体元件的第1引线框；
与所述第1引线框相平行地配置的第2引线框；
配置于所述第1引线框与所述第2引线框之间的第2绝缘树脂；
将所述第1和第2半导体元件、所述第1引线框、所述第2引线框进行密封的密封树脂；
将所述第1和第2半导体元件、与所述第1引线框进行电连接的电布线部；以及
将所述第1引线框与所述第2引线框进行电连接的层间连接部，
与所述第2引线框相平行地配置的散热板；
配置于所述第2引线框与所述散热板之间的第1绝缘树脂，
所述密封树脂将所述散热板进行密封，
所述第1引线框具有搭载所述第1半导体元件的第1岛状部、具有输出电极且搭载所述第2半导体元件的第2岛状部、以及具有正极侧外部电极和负极侧外部电极中的一方的第3岛状部，
所述第2引线框具有所述正极侧外部电极和所述负极侧外部电极中的另一方，
所述电布线部将所述第1半导体元件和所述第2岛状部进行电连接，将所述第2半导体元件和所述第3岛状部进行电连接，
所述层间连接部将所述第1岛状部和所述第2引线框进行电连接。
2.如权利要求1所述的半导体装置，其特征在于，
所述第1引线框与所述第2引线框之间的距离在50μm以上且500μm以下。
3.如权利要求1所述的半导体装置，其特征在于，
所述第1岛状部具有矩形形状，
所述第2岛状部的、除所述输出电极以外的主体部具有矩形形状，
所述第3岛状部的、除所述正极侧外部电极和所述负极侧外部电极中的所述一方以外的主体部具有矩形形状，
所述第2引线框部的、除所述正极侧外部电极和所述负极侧外部电极中的所述另一方以外的主体部具有矩形形状，
将所述第1岛状部的中心线、所述第2岛状部的主体部的中心线、所述第3岛状部的主体部的中心线、所述第2引线框的主体部的中心线、所述电布线部的中心线、以及所述层间连接部的中心线配置于同一线上，
所述第1和第2半导体元件的中心点配置于所述同一线上。
4.如权利要求1所述的半导体装置，其特征在于，
所述电布线部具有将平板弯曲的形状，
所述第2岛状部的、除所述输出电极以外的主体部具有矩形形状，
所述第3岛状部的、除所述正极侧外部电极和所述负极侧外部电极中的所述一方以外的主体部具有矩形形状，
所述第2岛状部的主体部的与电流方向正交的方向上的宽度、所述第3岛状部的主体部的与电流方向正交的方向上的宽度、所述电布线部的电连接至所述第2岛状部和第3岛状部的部分的与电流方向正交的方向上的宽度相同。
5.如权利要求1所述的半导体装置，其特征在于，
所述层间连接部具有将平板弯曲的形状，
所述第1岛状部具有矩形形状，
所述第1岛状部的与电流方向正交的方向上的宽度、所述层间连接部的电连接至第1岛状部的部分的与电流方向正交的方向上的宽度相同。
6.如权利要求1所述的半导体装置，其特征在于，
是用于3相电动机用功率转换装置的半导体装置，
所述输出电极是与所述3相电动机的U相、V相和W相电极中的一个相连接的电极。
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