CN112701093A - 半导体模块及电力转换装置 - Google Patents
半导体模块及电力转换装置 Download PDFInfo
- Publication number
- CN112701093A CN112701093A CN202011110741.7A CN202011110741A CN112701093A CN 112701093 A CN112701093 A CN 112701093A CN 202011110741 A CN202011110741 A CN 202011110741A CN 112701093 A CN112701093 A CN 112701093A
- Authority
- CN
- China
- Prior art keywords
- semiconductor module
- semiconductor
- heat sink
- lead frame
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 127
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 17
- 229920005989 resin Polymers 0.000 claims abstract description 17
- 238000000465 moulding Methods 0.000 claims abstract description 8
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000017525 heat dissipation Effects 0.000 abstract description 9
- 230000001939 inductive effect Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000004519 grease Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
- H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
- H01L2224/48096—Kinked the kinked part being in proximity to the bonding area on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/48175—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
- H01L2224/48177—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Geometry (AREA)
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
得到能够提高散热性、降低制造成本的半导体模块及电力转换装置。在绝缘性的散热片(12)之上设置半导体元件(13~16)。引线框(8、9)具有一体地构成的引线端子(8a、9a)和芯片焊盘(8b、9b)。导线(20、22)对引线框(8、9)和半导体元件(13~16)进行连接,成为主电流路径。模塑树脂(6)对散热片(12)、半导体元件(13~16)、引线框(8、9)以及导线(20、22)进行封装。引线端子(8a、9a)从模塑树脂(6)引出。散热片(12)与芯片焊盘(8b、9b)的下表面直接接触。在芯片焊盘(8b、9b)与散热片(12)的接触部分的正上方,导线(20、22)键合于芯片焊盘(8b、9b)。
Description
技术领域
本发明涉及半导体模块及电力转换装置。
背景技术
在半导体模块内部,半导体元件与引线端子通过导线连接。近年来,以SiC MOS芯片为首,与功率半导体元件的高性能化相伴的芯片缩小化正在加速。与此相伴,导线的根数也受到限制。如果导线的根数减少,则模块动作时的导线发热量增加。由此,引发引线端子和与其连接的外部的印刷基板的温度上升。因此,存在最终用户的冷却成本增加的问题。
作为解决该问题的方法,提出了在散热片之上设置中继电极,将导线和引线端子与中继电极连接的结构(例如,参照专利文献1(图1(b))。由此,能够将模块动作时在导线产生的热经由中继电极和散热片散热。
专利文献1:日本专利第6024750号公报
但是,由于通过追加中继电极而增加了部件数量和生产工序,因此生产成本上升。因此,现有的结构难以应用于要求大量生产的产品。
发明内容
本发明是为了解决上述课题而提出的,其目的在于得到一种能够提高散热性、降低制造成本的半导体模块以及电力转换装置。
本发明所涉及的半导体模块的特征在于,具有:绝缘性的散热片;半导体元件,其设置于所述散热片之上;引线框,其具有一体地构成的引线端子和芯片焊盘;导线,其连接所述引线框和所述半导体元件,成为主电流路径;以及模塑树脂,其对所述散热片、所述半导体元件、所述引线框以及所述导线进行封装,所述引线端子从所述模塑树脂引出,所述散热片与所述芯片焊盘的下表面直接接触,在所述芯片焊盘与所述散热片的接触部分的正上方,所述导线键合于所述芯片焊盘。
发明的效果
在本发明中,散热片与芯片焊盘的下表面直接接触,在芯片焊盘与散热片的接触部分的正上方,导线键合于芯片焊盘。由此,在模块动作时在导线产生的热经由散热片散热,因此能够提高散热性。另外,不需要为了导线的散热而新追加部件。因此,能够减少部件数量和生产工序,降低制造成本。
附图说明
图1是表示安装了实施方式1所涉及的半导体模块的状态的剖面图。
图2是表示实施方式1所涉及的半导体模块的内部结构的俯视图。
图3是将图2的一部分放大后的俯视图。
图4是图3的内部结构的沿着输出侧引线框的剖面图。
图5是图3的内部结构的沿着N侧引线框的剖面图。
图6是将对比例所涉及的半导体模块的内部结构的一部分放大后的俯视图。
图7是图6的内部结构的沿着输出侧引线框的剖面图。
图8是图6的内部结构的沿着N侧引线框的剖面图。
图9是将实施方式1所涉及的半导体模块的变形例的内部结构的一部分放大后的俯视图。
图10是表示实施方式2所涉及的半导体模块的剖面图。
图11是表示实施方式3所涉及的半导体模块的剖面图。
图12是表示实施方式3所涉及的半导体模块的变形例的剖面图。
图13是表示实施方式4所涉及的半导体模块的剖面图。
图14是表示引线端子的前端部插入至印刷基板的通孔的状态的斜视图。
图15是表示引线端子的前端部插入至印刷基板的通孔的状态的斜视图。
图16是表示引线端子的前端部插入至印刷基板的通孔的状态的斜视图。
图17是表示实施方式5所涉及的半导体模块的剖面图。
图18是表示实施方式6所涉及的电力转换装置的框图。
标号的说明
1半导体模块,2散热器,6模塑树脂,8N侧引线框,9输出侧引线框,8a、9a引线端子,8b、9b芯片焊盘,8c连接部,12散热片,13、14N侧半导体元件,15、16P侧半导体元件,20、22导线,25绝缘材料,26附加件(attachment),29控制电路。
具体实施方式
参照附图对实施方式所涉及的半导体模块以及电力转换装置进行说明。对于相同或者对应的结构要素标注相同的标号,有时省略重复说明。
实施方式1.
图1是表示安装了实施方式1所涉及的半导体模块的状态的剖面图。半导体模块1经由油脂3安装于具有散热鳍片的散热器2之上。印刷基板4配置于半导体模块1的上方。半导体模块1的引线端子5从模塑树脂6凸出,插入至印刷基板4的通孔7,与印刷基板4的电路连接。
图2是表示实施方式1所涉及的半导体模块的内部结构的俯视图。图3是将图2的一部分放大后的俯视图。设置有3个N侧引线框8、3个输出侧引线框9、1个P侧引线框10、控制侧引线框11。这些引线框是从一片金属板切出且在制造阶段相互连接的单个的引线框。因此,这些引线框的材质以及厚度相同。
N侧引线框8、输出侧引线框9、P侧引线框10设置于绝缘性的散热片12之上。3相的N侧半导体元件13、14分别被芯片键合于3个输出侧引线框9之上。3相的P侧半导体元件15、16被芯片键合于1个P侧引线框10之上。例如,N侧半导体元件13和P侧半导体元件15是IGBT,N侧半导体元件14和P侧半导体元件16是续流二极管。N侧半导体元件15连接于P侧半导体元件13的低压侧。控制IC 17、18与控制侧引线框11连接。
N侧半导体元件13、14的上表面电极彼此通过导线19连接,下表面电极与输出侧引线框9连接。N侧半导体元件14的上表面电极通过导线20与N侧引线框8连接。P侧半导体元件15、16的上表面电极彼此通过导线21连接,下表面电极与P侧引线框10连接。P侧半导体元件16的上表面电极通过导线22与输出侧引线框9连接。N侧半导体元件13的控制电极通过导线23与控制IC 17连接。P侧半导体元件15的控制电极通过导线24与控制IC 18连接。
图4是图3的内部结构的沿着输出侧引线框的剖面图。输出侧引线框9具有一体地构成的引线端子9a和芯片焊盘9b。散热片12与芯片焊盘9b的下表面直接接触。在芯片焊盘9b与散热片12的接触部分的正上方,导线22键合于芯片焊盘9b。
图5是图3的内部结构的沿着N侧引线框的剖面图。N侧引线框8具有一体地构成的引线端子8a和芯片焊盘8b。散热片12与芯片焊盘8b的下表面直接接触。在芯片焊盘8b与散热片12的接触部分的正上方,导线20键合于芯片焊盘8b。导线20、22成为模块动作时流过大的主电流的主电流路径。
模塑树脂6对散热片12、N侧半导体元件13、14、P侧半导体元件15、16、N侧引线框8、输出侧引线框9、P侧引线框10、控制侧引线框11以及导线19~24进行封装。N侧引线框8的引线端子8a、输出侧引线框9的引线端子9a、P侧引线框10的引线端子、控制引线框11的引线端子从模塑树脂6引出。引线端子8a、9a对应于图1的引线端子5。
接下来,与对比例进行对比来说明本实施方式的效果。图6是将对比例所涉及的半导体模块的内部结构的一部分放大后的俯视图。图7是图6的内部结构的沿着输出侧引线框的剖面图。图8是图6的内部结构的沿着N侧引线框的剖面图。在对比例中,通过导线22与P侧半导体元件16连接的输出侧引线框9也与散热片12紧贴。但是,通过导线20与N侧半导体元件14连接的N侧引线框8不与散热片12紧贴。在不与散热片12接触的N侧引线框8的引线端子8a键合有导线20。导线22键合于不与散热片12接触的输出侧引线框9的引线端子9a。因此,在模块动作时,在导线20、22产生的热不能经由散热片12散热。
与此相对,在本实施方式中,N侧引线框8的芯片焊盘8b的下表面与输出侧引线框9的芯片焊盘9b的下表面在同一平面与散热片12直接相接而没有经由粘接剂等。通过模塑树脂6进行封装,由此,芯片焊盘8b、9b与散热片12紧贴。在N侧引线框8的芯片焊盘8b与散热片12的接触部分的正上方,成为主电流路径的导线20键合于芯片焊盘8b。在输出侧引线框9的芯片焊盘9b与散热片12的接触部分的正上方,成为主电流路径的导线22键合于芯片焊盘9b。
由此,在模块动作时在导线20、22产生的热经由散热片12向散热器2散热,因此能够提高散热性。因此,能够抑制向引线端子8a、9a侧的传热,抑制引线端子8a、9a以及安装后的外部的印刷基板4的温度上升,能够抑制系统的冷却成本。
另外,上述结构能够应用于使用了单个引线框的模塑型的半导体模块,不需要为了导线20、22的散热而新追加部件。因此,能够减少部件数量和生产工序,降低制造成本,也能够应用于要求大量生产的产品。
另外,N侧引线框8在引线端子8a和芯片焊盘8b之间具有高度差。由此,能够将散热片12以及设置于其下的散热板(未图示)减薄,因此能够改善模块的热阻。输出侧引线框9的结构也是同样的。
图9是将实施方式1所涉及的半导体模块的变形例的内部结构的一部分放大后的俯视图。图3是3个N侧引线框8分别通过导线20与3相的半导体元件14连接的3分路结构。与此相对,图9是一个N侧引线框8分别通过导线20与3相的半导体元件14连接的1分路结构。由于将3相的量的N侧引线框结合起来,从而N侧引线框8的面积增大,散热能力提高,能够抑制N侧引线框8的引线端子8a的温度上升。
实施方式2.
图10是表示实施方式2所涉及的半导体模块的剖面图。N侧引线框8具有连接部8c,该连接部8c设置于引线端子8a与芯片焊盘8b之间,该连接部8c具有比引线端子8a和芯片焊盘8b小的截面积。由此,引线端子8a与被进行导线20的键合的芯片焊盘8b之间的热阻上升,所以能够进一步抑制向引线端子8a侧的传热。此外,连接部8c可以是直线形状,也可以是弯曲形状。另外,在输出侧引线框9设置连接部也能够得到同样的效果。
实施方式3.
图11是表示实施方式3所涉及的半导体模块的剖面图。散热片12与输出侧引线框9和P侧引线框10的下表面紧贴。另一方面,N侧引线框8的下表面没有被散热片12覆盖。散热片12的下表面和N侧引线框8的下表面从模塑树脂6露出,相互共面。在模块安装时,露出的散热片12的下表面和N侧引线框8的下表面与散热器2紧贴。这里,在实施方式1的结构中,与对比例相比,需要扩大散热片12的面积。与此相对,在本实施方式中,由于与实施方式1相比能够缩小散热片12的必要面积,因此能够降低产品成本。
图12是表示实施方式3所涉及的半导体模块的变形例的剖面图。在N侧引线框8的下表面涂敷有绝缘材料25。此外,绝缘材料25优选耐热性、耐寒性优异的硅脂等。在将半导体模块1安装于散热器2时,由于在N侧引线框8与散热器2之间存在绝缘材料25,因此能够确保两者的绝缘。因此,也能够应对需要模块内部与外部的绝缘的应用。
实施方式4.
图13是表示实施方式4所涉及的半导体模块的剖面图。从模塑树脂6引出的引线端子5的前端部的厚度比引线端子5的根部厚。
引线端子5的前端部在系统安装时插入至印刷基板4的通孔7,通过焊接而被固定。在模块动作时,引线端子5的发热向印刷基板4传热。与此相对,在本实施方式中,引线端子5的体积增大,散热能力提高,因此也能够抑制引线端子5以及印刷基板4的温度上升。
图14至图16是表示引线端子的前端部插入至印刷基板的通孔的状态的斜视图。多个引线端子5在X方向上排列。图14中引线端子5的前端部的厚度没有变厚。引线端子5的厚度能够设置为在X方向和Y方向的任意方向上都厚。但是,如图16所示,如果在X方向上设得厚,则引线端子5间的间距缩小,有可能引起绝缘不良。因此,优选如图15所示在Y方向上设得厚。
实施方式5.
图17是表示实施方式5所涉及的半导体模块的剖面图。在从模塑树脂6引出的引线端子5的前端部接合有金属制的附加件26。如上所示地在引线端子5安装外置的附加件26而使端子厚度增大,也会得到与实施方式4同样的效果。为了确保引线端子5与印刷基板4之间的导电性,附加件26由各种金属材料形成。
此外,半导体元件13~16不限于由硅形成,也可以由带隙比硅大的宽带隙半导体形成。宽带隙半导体例如为碳化硅、氮化镓类材料、或者金刚石。由这样的宽带隙半导体形成的半导体元件的耐电压性、容许电流密度高,因此能够小型化。通过使用该小型化的半导体元件,装入了该半导体元件的半导体装置也能够小型化、高集成化。另外,由于半导体元件的耐热性高,因此能够使散热器2小型化,能够将水冷部空冷化,因此能够使半导体装置进一步小型化。另外,由于半导体元件的功率损耗低且效率高,因此能够使半导体装置高效率化。
实施方式6.
本实施方式是将实施方式1~5所涉及的半导体模块应用于电力转换装置。本发明不限定于特定的电力转换装置,下面,作为实施方式6,对将本发明应用于三相的逆变器的情况进行说明。
图18是表示实施方式6所涉及的电力转换装置的框图。电力转换装置由电源27、半导体模块1、感应负载28、控制电路29、散热器2构成。控制电路29对应于图1的印刷基板4。电源27是直流电源,向半导体模块1供给直流电力。电源27能够由各种电源构成,例如能够由直流系统、太阳能电池、蓄电池构成,也可以由与交流系统连接的整流电路、AC/DC转换器构成。另外,也可以由将从直流系统输出的直流电力转换为规定的电力的DC/DC转换器构成电源27。
半导体模块1是在电源27与感应负载28之间连接的三相的逆变器,将从电源27供给的直流电力转换为交流电力,向感应负载28供给交流电力。
感应负载28是由从半导体模块1供给的交流电力驱动的三相的电动机。此外,感应负载28不限于特定的用途,是搭载于各种电气设备的电动机,例如,作为面向混合动力汽车、电动汽车、铁路车辆、电梯、或者空调设备的电动机而使用。
下面,对半导体模块1的详情进行说明。半导体模块1是具有开关元件和续流二极管(未图示)的主转换电路,通过开关元件的通断,将从电源27供给的直流电力转换为交流电力,供给至感应负载28。半导体模块1的具体的电路结构有各种各样,本实施方式所涉及的半导体模块1是2电平的三相全桥电路,能够由6个开关元件和与各个开关元件反向并联的6个续流二极管构成。6个开关元件两个两个地串联连接而构成上下桥臂,各上下桥臂构成全桥电路的各相(U相、V相、W相)。而且,各上下桥臂的输出端子、即半导体模块1的3个输出端子与感应负载28连接。半导体模块1由上述实施方式1~5中任意者的半导体模块构成。
内置于半导体模块1的控制用IC生成对同样内置于半导体模块1的开关元件进行驱动的驱动信号。具体而言,按照来自后述的控制电路29的控制信号,向各开关元件的控制电极输出使开关元件成为接通状态的驱动信号和使开关元件成为断开状态的驱动信号。在将开关元件维持为接通状态的情况下,驱动信号是大于或等于开关元件的阈值电压的电压信号(接通信号),在将开关元件维持为断开状态的情况下,驱动信号成为小于或等于开关元件的阈值电压的电压信号(断开信号)。
控制电路29对半导体模块1的开关元件进行控制,以向感应负载28供给期望的电力。具体而言,基于应向感应负载28供给的电力,计算半导体模块1的各开关元件应成为接通状态的时间(接通时间)。例如,能够通过与应输出电压相应地对开关元件的接通时间进行调制的PWM控制来对半导体模块1进行控制。而且,向半导体模块1所具备的该控制用IC输出控制指令(控制信号),以使得在各时刻向应成为接通状态的开关元件输出接通信号,向应成为断开状态的开关元件输出断开信号。该控制用IC按照该控制信号,向各开关元件的控制电极输出接通信号或者断开信号作为驱动信号。
散热器2将因半导体模块1的驱动而产生的热向外部释放。具体而言,在散热器2与半导体模块1之间涂敷接合用油脂,利用散热器2以及接合用油脂的热传导,将半导体模块1生成的热向外部释放。此外,散热器2可以仅安装于半导体模块1的单侧的面,也可以安装于两个面。
在本实施方式涉及的电力转换装置中,由于使用实施方式1~5中任意者的半导体模块,因此能够实现电力转换装置的小型化、低成本化以及可靠性的提高。
在本实施方式中,说明了将本发明应用于2电平的三相逆变器的例子,但本发明不限于此,能够应用于各种电力转换装置。在本实施方式中,虽然采用了2电平的电力转换装置,但也可以是3电平、多电平的电力转换装置,在向单相负载供给电力的情况下,也可以将本发明应用于单相的逆变器。另外,在向直流负载等供给电力的情况下,也能够将本发明应用于DC/DC转换器、AC/DC转换器。
另外,应用了本发明的电力转换装置不限定于上述负载是电动机的情况,例如也能够用作放电加工机、激光加工机、或者感应加热烹调器、非接触供电系统的电源装置,还能够用作太阳能发电系统、蓄电系统等的功率调节器。
Claims (11)
1.一种半导体模块,其特征在于,具有:
绝缘性的散热片;
半导体元件,其设置于所述散热片之上;
引线框,其具有一体地构成的引线端子和芯片焊盘;
导线,其连接所述引线框和所述半导体元件,成为主电流路径;以及
模塑树脂,其对所述散热片、所述半导体元件、所述引线框以及所述导线进行封装,
所述引线端子从所述模塑树脂引出,
所述散热片与所述芯片焊盘的下表面直接接触,
在所述芯片焊盘与所述散热片的接触部分的正上方,所述导线键合于所述芯片焊盘。
2.根据权利要求1所述的半导体模块,其特征在于,
所述引线框在所述引线端子与所述芯片焊盘之间具有高度差。
3.根据权利要求1或2所述的半导体模块,其特征在于,
所述半导体元件具有低压侧半导体元件和在所述低压侧半导体元件的高压侧连接的高压侧半导体元件,
所述引线框通过所述导线与所述低压侧半导体元件连接。
4.根据权利要求1至3中任一项所述的半导体模块,其特征在于,
所述引线框具有连接部,该连接部设置于所述引线端子与所述芯片焊盘之间,具有比所述引线端子和所述芯片焊盘小的截面积。
5.根据权利要求1或2所述的半导体模块,其特征在于,还具有:
低压侧半导体元件,其连接于所述半导体元件的低压侧;以及
低压侧引线框,其与所述低压侧半导体元件进行导线连接,
所述低压侧引线框的下表面未被所述散热片覆盖,而是从所述模塑树脂露出。
6.根据权利要求5所述的半导体模块,其特征在于,
还具有在所述低压侧引线框的下表面涂敷的绝缘材料。
7.根据权利要求1至4中任一项所述的半导体模块,其特征在于,
所述半导体元件具有3相的半导体元件,
1个所述引线框与所述3相的半导体元件分别通过导线连接。
8.根据权利要求1至7中任一项所述的半导体模块,其特征在于,
从所述模塑树脂引出的所述引线端子的前端部的厚度比所述引线端子的根部厚。
9.根据权利要求1至7中任一项所述的半导体模块,其特征在于,
还具有金属制的附加件,该附加件与从所述模塑树脂引出的所述引线端子的前端部接合。
10.根据权利要求1至9中任一项所述的半导体模块,其特征在于,
所述半导体元件由宽带隙半导体形成。
11.一种电力转换装置,其特征在于,具有:
权利要求1至10中任一项所述的半导体模块,其对被输入进来的电力进行转换而输出;
控制电路,其将对所述半导体模块进行控制的控制信号输出至所述半导体模块;以及
散热器,其对所述半导体模块的热进行散热。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019-192904 | 2019-10-23 | ||
JP2019192904A JP7196815B2 (ja) | 2019-10-23 | 2019-10-23 | 半導体モジュール及び電力変換装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN112701093A true CN112701093A (zh) | 2021-04-23 |
Family
ID=75379357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011110741.7A Pending CN112701093A (zh) | 2019-10-23 | 2020-10-16 | 半导体模块及电力转换装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11322432B2 (zh) |
JP (1) | JP7196815B2 (zh) |
CN (1) | CN112701093A (zh) |
DE (1) | DE102020126810A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102019206523A1 (de) * | 2019-05-07 | 2020-11-12 | Zf Friedrichshafen Ag | Leistungsmodul mit gehäusten Leistungshalbleitern zur steuerbaren elektrischen Leistungsversorgung eines Verbrauchers |
JP7334655B2 (ja) * | 2020-03-06 | 2023-08-29 | 三菱電機株式会社 | 半導体装置 |
US11652030B2 (en) * | 2020-12-29 | 2023-05-16 | Semiconductor Components Industries, Llc | Power module and related methods |
DE102021105264B4 (de) * | 2021-03-04 | 2024-05-29 | Infineon Technologies Ag | Leistungselektronikmodul und Verfahren zur Herstellung eines Leistungselektronikmoduls |
JP2022144711A (ja) * | 2021-03-19 | 2022-10-03 | 三菱電機株式会社 | 半導体装置の製造方法 |
US20220396154A1 (en) * | 2021-06-14 | 2022-12-15 | Panasonic Intellectual Property Management Co., Ltd. | Vehicle mounted electric power converter |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10125826A (ja) * | 1996-10-24 | 1998-05-15 | Hitachi Ltd | 半導体装置及びその製法 |
JP2004022968A (ja) * | 2002-06-19 | 2004-01-22 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2005311214A (ja) * | 2004-04-26 | 2005-11-04 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
CN108347177A (zh) * | 2016-12-28 | 2018-07-31 | 瑞萨电子株式会社 | 半导体装置 |
CN109216299A (zh) * | 2017-06-30 | 2019-01-15 | 瑞萨电子株式会社 | 半导体模块的制造方法及半导体模块 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100723454B1 (ko) * | 2004-08-21 | 2007-05-30 | 페어차일드코리아반도체 주식회사 | 높은 열 방출 능력을 구비한 전력용 모듈 패키지 및 그제조방법 |
KR101524544B1 (ko) * | 2008-03-28 | 2015-06-02 | 페어차일드코리아반도체 주식회사 | 펠티어 효과를 이용한 열전기 모듈을 포함하는 전력 소자패키지 및 그 제조 방법 |
JP5446302B2 (ja) | 2009-02-13 | 2014-03-19 | パナソニック株式会社 | 放熱板とモジュール |
JP5511621B2 (ja) | 2010-10-13 | 2014-06-04 | 三菱電機株式会社 | 半導体装置 |
JP2013070026A (ja) | 2011-09-08 | 2013-04-18 | Rohm Co Ltd | 半導体装置、半導体装置の製造方法、半導体装置の実装構造、およびパワー用半導体装置 |
JP6024750B2 (ja) | 2012-07-17 | 2016-11-16 | 富士電機株式会社 | 半導体モジュール |
JP2014060344A (ja) | 2012-09-19 | 2014-04-03 | Sanken Electric Co Ltd | 半導体モジュールの製造方法、半導体モジュール |
DE112014006660B4 (de) * | 2014-05-12 | 2019-10-31 | Mitsubishi Electric Corporation | Leistungshalbleiteranordnung und Verfahren zum Herstellen derselben |
WO2016072012A1 (ja) * | 2014-11-07 | 2016-05-12 | 三菱電機株式会社 | 電力用半導体装置およびその製造方法 |
JP6677616B2 (ja) * | 2016-09-29 | 2020-04-08 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
-
2019
- 2019-10-23 JP JP2019192904A patent/JP7196815B2/ja active Active
-
2020
- 2020-04-24 US US16/858,290 patent/US11322432B2/en active Active
- 2020-10-13 DE DE102020126810.6A patent/DE102020126810A1/de active Pending
- 2020-10-16 CN CN202011110741.7A patent/CN112701093A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10125826A (ja) * | 1996-10-24 | 1998-05-15 | Hitachi Ltd | 半導体装置及びその製法 |
JP2004022968A (ja) * | 2002-06-19 | 2004-01-22 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2005311214A (ja) * | 2004-04-26 | 2005-11-04 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
CN108347177A (zh) * | 2016-12-28 | 2018-07-31 | 瑞萨电子株式会社 | 半导体装置 |
CN109216299A (zh) * | 2017-06-30 | 2019-01-15 | 瑞萨电子株式会社 | 半导体模块的制造方法及半导体模块 |
Also Published As
Publication number | Publication date |
---|---|
DE102020126810A1 (de) | 2021-04-29 |
JP2021068803A (ja) | 2021-04-30 |
US20210125904A1 (en) | 2021-04-29 |
US11322432B2 (en) | 2022-05-03 |
JP7196815B2 (ja) | 2022-12-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7196815B2 (ja) | 半導体モジュール及び電力変換装置 | |
CN109727960B (zh) | 半导体模块、其制造方法以及电力变换装置 | |
JP6705393B2 (ja) | 半導体装置及び電力変換装置 | |
EP2851951B1 (en) | Method for manufacturing semiconductor device and semiconductor device | |
US10229869B2 (en) | Semiconductor device and power conversion device including a bent control side frame | |
JP2020004893A (ja) | パワー半導体モジュール、電力変換装置、およびパワー半導体モジュールの製造方法 | |
US20220157767A1 (en) | Semiconductor device, power converter, and method of manufacturing semiconductor device | |
CN108538793B (zh) | 半导体功率模块及电力变换装置 | |
CN110649004A (zh) | 功率模块以及电力变换装置 | |
CN111052325B (zh) | 半导体模块以及电力转换装置 | |
JP6952889B2 (ja) | パワー半導体モジュール及びその製造方法並びに電力変換装置 | |
US11908822B2 (en) | Power semiconductor module and power conversion apparatus | |
CN111293087A (zh) | 半导体装置以及电力变换装置 | |
US20230070214A1 (en) | Semiconductor device and power converter | |
CN111602232A (zh) | 半导体装置、半导体装置的制造方法及电力转换装置 | |
US20230163052A1 (en) | Semiconductor device and power conversion device | |
WO2023175675A1 (ja) | パワーモジュール半導体パッケージおよび半導体装置 | |
US20230130373A1 (en) | Semiconductor device | |
CN114762110A (zh) | 半导体模块、电力变换装置及移动体 | |
US20200251425A1 (en) | Semiconductor device and power conversion device | |
JP2023110389A (ja) | 半導体装置、電力変換装置、および、半導体装置の製造方法 | |
JP2022067375A (ja) | 電力用半導体装置およびその製造方法ならびに電力変換装置 | |
JP2022070483A (ja) | パワー半導体モジュール及びその製造方法並びに電力変換装置 | |
CN117438404A (zh) | 半导体装置、半导体装置的制造方法以及电力变换装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |