CN104263266A - 用于半导体装置的粘合剂膜 - Google Patents

用于半导体装置的粘合剂膜 Download PDF

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Publication number
CN104263266A
CN104263266A CN201410415678.6A CN201410415678A CN104263266A CN 104263266 A CN104263266 A CN 104263266A CN 201410415678 A CN201410415678 A CN 201410415678A CN 104263266 A CN104263266 A CN 104263266A
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Prior art keywords
basement membrane
binder film
pressure sensitive
film
sensitive adhesive
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CN201410415678.6A
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CN104263266B (zh
Inventor
鱼东善
宋珪锡
黃珉珪
宋基态
徐大虎
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Cheil Industries Inc
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Cheil Industries Inc
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    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/62—Polymers of compounds having carbon-to-carbon double bonds
    • C08G18/6216—Polymers of alpha-beta ethylenically unsaturated carboxylic acids or of derivatives thereof
    • C08G18/625—Polymers of alpha-beta ethylenically unsaturated carboxylic acids; hydrolyzed polymers of esters of these acids
    • C08G18/6254—Polymers of alpha-beta ethylenically unsaturated carboxylic acids and of esters of these acids containing hydroxy groups
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Abstract

本发明提供了一种用于半导体装置的粘合剂膜，所述粘合剂膜包括在0℃至5℃下具有50μm/m·℃至150μm/m·℃的线性膨胀系数的基膜。所述粘合剂膜在低温储存较长时间后具有优异的卷绕形状稳定性，从而在以后的半导体封装工艺中不会导致倾斜现象并降低缺陷。

Description

用于半导体装置的粘合剂膜
本申请是申请日为2011年10月9日，申请号为201110303308.X，发明名称为“用于半导体装置的粘合剂膜”的发明专利申请的分案申请。
技术领域
本发明涉及一种用于半导体装置的粘合剂膜。更具体地，本发明涉及一种用于半导体装置的粘合剂膜，所述粘合剂膜在低温下储存较长时间后稳定地保持卷绕形状。
背景技术
通常，已将银浆用于使半导体装置粘结在一起，或者用于将半导体装置粘结到支撑元件上。为了跟上半导体装置向更小且更高容量的趋势，用于半导体装置的支撑元件也正在变得更小且更精密。
已得到广泛应用的银浆会泄漏或导致半导体装置倾斜。因此，在引线焊接过程中Ag浆会导致故障、气泡产生和厚度控制困难。近来，粘结膜已广泛用作这种银浆的替代品。
用于半导体组装的粘合剂膜通常与切片膜组合使用。切片膜在半导体芯片制造的切片工艺中用于固定半导体晶圆。切片工艺是将半导体晶圆切成单个芯片的工艺，且紧随有后续工艺如延展、拾取和贴装。
切片膜通过将UV固化粘合剂或可固化的粘合剂涂布至具有聚烯烃结构的下层膜，并对其贴附PET覆盖膜形成。
用于半导体组装的常用粘合剂膜按如下使用。将粘结膜贴附至半导体晶圆上，然后在其上沉积具有以上构造的切片膜，略去覆盖膜，随后将晶圆切成单个芯片。近来，作为用于切片芯片焊接的半导体组装粘合剂，略去PET覆盖膜的切片膜和将粘结膜堆叠成单个膜，且半导体晶圆沉积于其上，随后将晶圆切成单个芯片。
图1是表示基膜因热收缩产生的倾斜的透视图。
参照图1，用于半导体组装的基膜14或粘结带(膜)通常在5℃或更低的温度下围绕卷轴12卷绕，并在使用前于低温下长期储存。然而，基膜由于在低温下因热损坏而热收缩，从而当基膜在低温下储存较长时间时，在基膜中产生空隙。
因此，用于半导体组装的粘结带趋向于在其移动和运行期间按一个方向倾斜。也就是说，如图1所示，绕卷轴12卷绕的用于半导体组装的基膜或粘结带14可能从一侧移动至另一侧(按箭头方向)，使得圆形的晶圆在预切割型贴装过程中不能贴附到适当位置。
发明内容
本发明的一个方面提供了一种用于半导体装置的粘合剂膜，所述粘合剂膜在低温下长时间储存期间保持卷绕形式的稳定性。
所述用于半导体装置的粘合剂膜包括在0℃至5℃下具有50μm/m·℃至150μm/m·℃的线性膨胀系数的基膜。
所述基膜在5℃放置120小时后可具有大于0且小于等于0.1％的热收缩率。
所述基膜可包括以下至少一种：聚烯烃膜，如聚乙烯(PE)、聚丙烯(PP)、乙烯/丙烯共聚物、聚1-丁烯、乙烯/乙酸乙烯酯共聚物、聚乙烯/苯乙烯丁二烯橡胶混合物；聚氯乙烯；聚对苯二甲酸乙二醇酯(PET)、聚碳酸酯(PC)、聚(甲基丙烯酸甲酯)、聚酰亚胺(PI)、聚萘二酸乙二醇酯(PEN)、聚酯砜、聚苯乙烯(PS)、聚丙烯酸酯(PAR)；和热塑性弹性体，如聚氨酯、聚酰胺-多元醇共聚物等。
所述用于半导体装置的粘合剂膜可进一步包括在所述基膜一面上的压敏粘合剂层。
所述压敏粘合剂层可包括压敏粘合粘结剂、热固化剂和光引发剂。
具体地，所述压敏粘合粘结剂可具有100,000至1,000,000的重均分子量。
所述用于半导体装置的粘合剂膜可进一步包括依次堆叠在所述压敏粘合剂层一面上的粘结层和保护膜。
所述粘合剂膜在5℃放置120小时后可具有大于0且小于等于0.2％的热收缩率。
所述粘结层可包括丙烯酸树脂和环氧树脂。
具体地，所述丙烯酸树脂可具有-30℃至10℃的玻璃化转变温度，且所述环氧树脂可为双酚-A环氧树脂、线型酚醛环氧树脂或甲酚醛环氧树脂。
附图说明
由以下结合附图的详细说明，本发明的以上和其它方面、特征和优点将变得明显，其中：
图1是表示基膜因热收缩产生的倾斜的透视图；
图2是表示热收缩率的概念的截面图；
图3是表示根据一个示例性实施方式的用于半导体装置的粘合剂膜的截面图；
图4是粘合剂膜的区域图，表示卷绕形状稳定性的评价方法；
图5是从图4的箭头A方向的粘合剂膜的侧视图；且
图6是从图4的箭头B方向看到的粘合剂膜的侧视图。
具体实施方式
现将参照附图详细说明本发明的实施方式。
本发明的各方面提供一种用于半导体生产工艺的基膜和包括该基膜的用于半导体装置的粘合剂膜，上述基膜在低温储存方面优异。该基膜在约0℃至5℃可具有50μm/m·℃至150μm/m·℃的线性膨胀系数，优选50μm/m·℃至120μm/m·℃，且更优选60μm/m·℃至100μm/m·℃。此外，上述基膜在5℃放置120小时后可具有大于0且小于等于0.1％的热收缩率，优选大于0且小于等于0.06％。
热收缩率和线性膨胀系数在以上范围内时，即使基膜以低张力卷绕，基膜也可具有优异的低温储存和用于半导体封装工艺如扩展工艺的适宜性能。
基膜可具有单层结构或至少两层的多层结构。此外，基膜可由对可见光或UV光等透明的材料形成。或者，基膜可由不透明的材料形成。
上述基膜可根据其应用和条件选择。例如，基膜可包括以下至少一种：聚烯烃膜，如聚乙烯(PE)、聚丙烯(PP)、乙烯/丙烯共聚物、聚1-丁烯、乙烯/乙酸乙烯酯共聚物、聚乙烯/苯乙烯丁二烯橡胶混合物、聚氯乙烯膜等、聚对苯二甲酸乙二醇酯(PET)、聚碳酸酯、聚(甲基丙烯酸甲酯)、聚酰亚胺(PI)、聚萘二酸乙二醇酯(PEN)、聚酯砜、聚苯乙烯(PS)、聚丙烯酸酯(PAR)；和热塑性弹性体，如聚氨酯、聚酰胺-多元醇共聚物等，但不限于此。
图2是表示热收缩率的概念的截面图。
参照图2，基膜的热收缩率可定义为基膜卷绕成卷的轴的垂直方向上的收缩率。也就是说，将沿卷轴102卷绕的基膜104在低温下放置较长时间后，测定与轴垂直的方向上长度(d)的变化，从而定义热收缩率。此外，基膜的线性膨胀系数可定义为将温度以5℃/分钟从-20℃升至300℃时测定的热膨胀系数。
图3是根据一个示例性实施方式的用于半导体装置的粘合剂膜的截面图。在此，“粘合剂膜”是指具有压敏粘合功能或粘结功能中至少一种功能的胶带或膜。
参照图3，根据该实施方式的用于半导体装置的粘合剂膜110包括基膜112、压敏粘合剂层114、粘结层116和保护膜118。尽管图3中粘合剂膜110表示为包括粘结层116和保护膜118，需要时粘合剂膜110可略去粘结层116和保护膜118或者只略去粘结层116。例如，当用作切片胶带时，粘合剂膜可包括基膜112和压敏粘合剂层114。
具有包括基膜112、压敏粘合剂层114、粘结层116和保护层118的四层结构的用于半导体装置的粘合剂膜在5℃放置120小时后可具有0至0.2％之间的热收缩率，优选0和0.1％之间，且更优选0和0.08％之间。在此范围内，即使粘合剂膜以低张力卷绕，粘合剂膜可呈现出优异的低温储存和膨胀性能，且不会存在因低温储存而产生倾斜现象的缺陷。
现将更详细地说明根据本实施方式的粘合剂膜的组分和性能。
(1)基膜
构成用于半导体装置的粘合剂膜110的基膜112在约0℃至5℃可具有50μm/m·℃至150μm/m·℃的线性膨胀系数，优选50μm/m·℃至120μm/m·℃，且更优选60μm/m·℃至100μm/m·℃。此外，该基膜在5℃放置120小时后可具有大于0且小于等于0.1％的热收缩率，优选大于0且小于等于0.06％。具体地，该基膜适用于背面打磨工艺和切片工艺。
可将多种塑料膜用作背面打磨工艺的基膜。具体地，可延展的热塑性塑料膜可用作上述基膜。具有电路图案的晶圆由于在背面打磨期间受到物理冲击所产生的裂纹而易受损或破裂。因此，将可延展的热塑性塑料膜用作基膜，以通过吸收和释放冲击来保护晶圆在背面打磨工艺中不受冲击。
基膜112不仅是可延展的，而且对UV光还是透明的。具体地，当压敏粘合剂层114包含UV固化粘合剂组合物时，希望基膜对粘合剂组合物固化所处频率的UV光呈现出优异的透明性。因此，在此情况下，基膜112不含UV光吸收剂。
希望基膜112是化学稳定的。尽管考虑在背面打磨工艺期间的重冲击而制备基膜112，基膜112需要具有化学稳定性，因为最终打磨阶段使用化学机械打磨(CMP)浆料进行。通常，聚合物化合物如聚烯烃是化学稳定的，并可适用于基膜112。然而，也可使用其他材料。
基膜112的实例可包括以下至少一种聚烯烃膜：如聚乙烯(PE)、聚丙烯(PP)、乙烯/丙烯共聚物、聚1-丁烯、乙烯/乙酸乙烯酯共聚物、聚乙烯/苯乙烯丁二烯橡胶混合物；聚氯乙烯膜等；聚对苯二甲酸乙二醇酯(PET)、聚碳酸酯、聚(甲基丙烯酸甲酯)、聚酰亚胺(PI)、聚萘二酸乙二醇酯(PEN)、聚酯砜、聚苯乙烯(PS)、聚丙烯酸酯(PAR)；和热塑性弹性体，如聚氨酯、聚酰胺-多元醇共聚物等，但不限于此。
基膜可通过共混并熔融这些材料的片之后的挤出工艺形成。或者，基膜可通过吹塑形成。由共混的片的种类决定基膜的耐热性和机械性能。
可对基膜进行表面改性以改善对压敏粘合剂层114的附着力。可通过物理或化学方法实现该表面改性。物理方法可包括电晕或等离子体处理，且化学方法可包括在线涂布或底漆处理(primer treatment)。
考虑到可加工性、UV透过性等，基膜112可具有30μm至300μm的厚度。在此范围内，基膜能在背面打磨工艺中充分释放物理冲击。此外，单卷最终膜产品具有适宜的长度厚度比，以防止频繁更换卷，从而耗费更少的时间并提供成本方面的优势。为了确保基膜与上面形成有凸起的晶圆不规则表面充分接触，基膜112可具有50μm至200μm的厚度。
(2)压敏粘合剂层
用于半导体装置的粘合剂膜110可包括基膜112一面上的压敏粘合剂层114。压敏粘合剂层114可为UV固化压敏粘合剂层，但不限于此。
UV辐射前，压敏粘合剂层通过强粘性坚固地支撑其上的绝缘粘结层116和晶圆，从而防止背面打磨工艺期间的偏移或移动产生晶圆损坏，并防止CMP期间化学材料渗入各个层之间的界面。
UV辐射后，压敏粘合剂层由于交联反应而具有增大的粘附性和收缩，从而在与绝缘粘结层116的界面处附着力显著降低，由此容易使压敏粘合剂层114和基膜112与贴装到粘结层116上的晶圆分离。
压敏粘合剂层114可包括UV固化或非UV固化组合物。在普通的背面打磨胶带中，非UV固化组合物在UV辐射前具有较低的粘合强度，使得非UV固化组合物的压敏粘合剂层即使未经UV辐射，也能容易用卷型粘合剂膜从压敏粘合剂层和晶圆之间的界面处剥离。
然而，对于晶圆级堆叠组装(wafer-level stack package，WSP)膜，在光固化压敏粘合剂层114和粘结层116之间的有机界面处必须实现剥离。在此情况下，用卷型粘合剂膜基本不能使非UV固化组合物的压敏粘合剂层剥离。因此，希望压敏粘合剂层可由UV固化组合物形成。
因此，为了用于WSP膜，光固化压敏粘合剂层114可由粘结剂的侧链上导入UV可固化的碳-碳双键的组合物代替混合组合物形成。这种通过向粘合剂树脂侧链导入碳-碳双键的低分子量材料表现为单分子的组合物被称作包覆型粘合剂组合物。
包覆型粘合粘结剂可具有100,000至1,000,000的分子量，并可通过聚氨酯反应向共聚的粘结剂侧链添加具有C-C双键的低分子量化合物制备，其中具有异氰酸酯端基的低分子量化合物用作该具有C-C双键的低分子量化合物。
UV固化粘合剂组合物可通过将粘合粘结剂与热固化剂、光引发剂等混合来制备。对于该粘合剂组合物，可使用任何热固化剂，只要它能通过导入粘合粘结剂侧链的官能团反应而固化。
如果提供至侧链的官能团为羧基，可使用环氧固化剂。如果提供至侧链的官能团为羟基，可使用异氰酸酯固化剂。此外，可使用三聚氰胺固化剂，或可使用环氧固化剂、异氰酸酯固化剂和三聚氰胺固化剂中至少两种的混合物。
对于上述粘合剂组合物，可使用任何光引发剂，如酮和苯乙酮光引发剂，只要它在UV辐射下能在分子键断裂时产生自由基。当对粘合剂组合物加入光引发剂时，粘合粘结剂的侧链C-C双键与自由基进行交联反应，且压敏粘合剂层的玻璃化转变温度升高，从而降低压敏粘合剂层的粘性。当压敏粘合剂层失去粘性时，压敏粘合剂层可用较低力与绝缘粘结层116分离。
压敏粘合剂层114可通过直接涂覆或转移涂覆形成在基膜112上。在转移涂覆中，将压敏粘合剂层114在剥离膜上沉积并干燥，然后转移至基膜112。压敏粘合剂层114可通过形成层的任何涂覆方法形成，如棒涂、凹版印刷、逗号印刷、反向-辊涂、涂料器涂覆、喷涂等。
(3)粘结层
用于半导体装置的粘合剂膜110可进一步包括粘结层116。也就是说，粘结层116可省去，或堆叠在沉积于基膜112上的压敏粘合剂层114上。
粘结层116是与晶圆表面直接接触的层。在WSP膜中，晶圆表面因上面形成有凸起等非常不规则，但希望粘结层堆叠在晶圆表面上而没有空隙，然后通过芯片贴装使芯片的上下两面紧密粘结。
也就是说，因为粘结层116用作最终粘结芯片上下两面的粘合剂，希望粘结层具有满足半导体封装级别的可靠性和用于封装的可加工性。即，理想的是晶圆的不规则表面被粘结层填充，而不会在贴装工艺期间出现空隙，从而防止切片工艺期间碎片或破裂出现以及因芯片贴装工艺后膨胀而产生可靠性变差。在60℃下将粘结层116贴附至上面具有凸起的晶圆表面，在该表面上形成了电路图案。
对粘结层116组成没有特别限制，但可由例如具有成膜性的高分子量丙烯酸树脂和作为固化剂的环氧树脂的混合物形成。由于粘结层116为膜型粘合剂，可将具有优异成膜性的丙烯酸树脂用作除呈现出粘附性的固化部分以外的热塑性树脂。
此外，环氧树脂没有特别限制，只要它在固化时呈现出粘附性，但为了进行固化反应可具有至少两个官能团。因此，可使用双酚-A环氧树脂、酚醛环氧树脂和甲酚醛环氧树脂中的至少一种。
可将固化促进剂用作固化环氧树脂的固化剂，其实例可包括咪唑、胺或酚类固化促进剂，但不限于此。
如上所述，粘结层116可由作为粘结剂的丙烯酸树脂、作为固化部分的环氧树脂和能与它们反应的固化促进剂形成，其中基于100重量份的除该丙烯酸粘结剂以外的粘结层116的剩余组分，该丙烯酸树脂含量可为60至150重量份，并具有-30℃至10℃的玻璃化转变温度。
当丙烯酸树脂的玻璃化转变温度为-30℃至10℃时，丙烯酸树脂可具有足以在60℃的贴装温度下用该丙烯酸树脂填充具有凸起的不规则表面的流动性。此外，当该粘结剂不仅具有-30℃至10℃的玻璃化转变温度，而且基于100重量份的除该丙烯酸粘结剂以外的粘结层116的剩余组分，该粘结剂含量为60重量份或更高时，由于粘结剂的绝对量充足，因而能得到优异的成膜性，并能有利于卷绕成卷状。此外，当丙烯酸粘结剂含量少于150重量份时，在100℃或更高温度下可获得充足的流动性，从而能实现芯片粘结而不产生气泡。
此外，可添加无机颗粒，如二氧化硅来改善粘结层116的尺寸稳定性和耐热性。具体地，与晶圆表面接触的粘结层116可包括各种硅烷偶联剂中的至少一种以增强对晶圆的附着力。
可使用任何涂覆方法形成粘结层116，只要它能形成均匀的粘结层。粘结层116可具有2μm至30μm的涂层厚度。当其厚度为2μm或更大时，粘结层在芯片上下面之间提供适宜的附着力。当其厚度为30μm或更小时，粘结层在趋光、薄而小的半导体组装方面有优势。
(4)保护膜
用于半导体装置的粘合剂膜110可包括基膜112、压敏粘合剂层114、粘结层116和贴附到粘结层116上的保护膜118。
任何膜均可用作保护膜118，只要它能保护绝缘粘结层116不受外来材料或外部冲击的影响。例如，用作涂覆绝缘粘结层116的运行膜(running film)的膜可用作保护膜。因为半导体封装工艺在去除最外部的保护膜后进行，因此可使用可剥离的膜。
保护膜118可为例如聚对苯二甲酸乙二醇酯膜。为了提供脱模性能，保护膜118可用聚二甲基硅氧烷脱模剂、含氟脱模剂等进行表面改性。
以下，将说明制备压敏粘合剂层和粘结层的组合物的方法。
压敏粘合剂层的组合物的制备
向一侧装有回流冷凝器、另一侧装有温度计且第三侧装有滴液漏斗的20L四口烧瓶加入作为有机溶剂的2.4kg乙酸乙酯和1.2kg甲苯。
将该溶液加热至60℃，用510g甲基丙烯酸甲酯、540g丙烯酸丁酯单体、2.85kg丙烯酸-2-乙基己酯、1.8kg甲基丙烯酸-2-羟乙酯、300g丙烯酸和39g过氧化苯甲酰制备混合溶液，在60至70℃下3小时内用滴液漏斗滴加至该烧瓶中。此时，在以250rpm搅拌的同时，滴加该溶液。
完成滴加后，在相同温度下使反应物老化3小时，然后向该反应物加入600g乙酸甲氧基丙酯和2g偶氮二异丁腈，并放置4小时，随后测定粘度和固含量并终止反应。聚合后的产物具有10,000至15,000cps的粘度和40％的固含量。
然后，向制得的丙烯酸粘合粘结剂加入450g甲基丙烯酸缩水甘油醚酯，并在50℃下反应1小时以制得包覆型粘合粘结剂。将100g制得的粘合粘结剂与2g芳族聚异氰酸酯热固化剂(AK-75,Aekyung Chemical有限公司)和1g 1-羟基环己基-苯基酮光引发剂IC-184(Ciba-Geigy有限公司)，从而制备固化粘合剂组合。
粘结层组合物的制备
混合30g具有350,000的重均分子量和12℃的玻璃化转变温度的丙烯酸树脂(SG-80H,Nagase ChemTech Co.,Ltd.)、4.5g具有10,000或更小分子量的甲酚醛环氧树脂(YDCN-500-90P,Kukdo Chemical Co.,Ltd.)、4.5kg二甲酚固化剂(MEH7800C,Meiwa Plastic Industries Co.,Ltd.)、10g咪唑固化促进剂(2P4MZ,Sikoku Chemical Co.,Ltd.)、100g氨基硅烷偶联剂(KBM-573,Shin Estu Chemical Co.,Ltd.)和1.5g圆形二氧化硅填料(PLV-6XS,Tatsumori)，并以700rpm进行初次分散2小时，随后碾磨，从而制备粘结组合物。
实施例和对比例
实施例1
用试验涂覆系统(pilot coating system)将制备例的光固化粘合剂组合物沉积在38μm PET剥离膜(SRD-T38,Saehan Media Co.,Ltd.)的一面上。然后，在80℃下将产物堆叠在100μm聚烯烃膜上,该聚烯烃膜在5℃下具有0.06％热收缩率且在0℃至5℃下具有101μm/m·℃的线性膨胀系数(C.T.E),并在40℃的干燥室内老化3天，从而制备光固化压敏粘合剂层。
相似的，用试验涂覆系统将制备例的粘结组合物沉积在38μm PET剥离膜(SRD-T38,Saehan Media Co.,Ltd.)的一面上至20μm的厚度,然后在80℃下干燥2分钟。然后，在80℃下将产物堆叠在38μm PET(SRD-T38,SaehanMedia Co.,Ltd.)上,并在25℃的室温下老化3天,从而制备绝缘粘结层。从粘合剂膜的一面上去除剥离膜后，通过预切割将粘合剂膜以晶圆形状堆叠在具有光固化压敏粘合剂层的粘合剂膜上。
实施例2
以与实施例1相同的方式制备粘合剂膜，不同之处在于使用在5℃下具有0.02％热收缩率且在0℃至5℃下具有60μm/m·℃的线性膨胀系数(C.T.E)的100μm聚烯烃膜作为基膜。
对比例1
以与实施例1相同的方式制备粘合剂膜，不同之处在于使用在5℃下具有0.3％热收缩率且在0℃至5℃下具有168μm/m·℃的线性膨胀系数(C.T.E)的100μm聚烯烃膜作为基膜。
对比例2
以与实施例1相同的方式制备粘合剂膜，不同之处在于使用在5℃下具有0.15％热收缩率且在0至5℃下具有98μm/m·℃的线性膨胀系数(C.T.E)的100μm聚烯烃膜作为基膜。
表1示出了实施例和对比例中制备的用于半导体装置的粘合剂膜的卷绕形状稳定性。如表1所示，使用了在5℃下放置120小时后具有大于0且小于等于0.1％热收缩率且在0至5℃下具有50μm/m·℃至150μm/m·℃的线性膨胀系数的基膜的粘合剂膜具有优异的卷绕形状稳定性。详细地，当使用在5℃下放置120小时后具有大于0且小于等于0.06％热收缩率且在0至5℃下具有60至100μm/m·℃的线性膨胀系数的基膜时，粘合剂膜具有优异的卷绕形状稳定性。
具有优异的卷绕稳定性时，粘合剂膜在移动和运行期间不会朝一个方向倾斜，从而当固定预切型时，晶圆以合适的位置贴附，并且可以降低半导体组装工艺中的缺陷率。
此外，在具有四层结构的基膜的用于半导体装置的粘合剂膜中，实施例1和2中的在5℃下放置120小时后具有大于0且小于等于0.2％热收缩率的粘合剂膜具有优异的卷绕形状稳定性。
表1
[线性(热)膨胀系数(C.T.E)]
将具有100μm厚度的各个基膜切成7mm x 14mm(宽度×长度)样品，随后在将温度以5℃/分钟从-20升至300℃，同时用TMA Q7200(TAInstrument)测定线性膨胀系数。
[基膜的热收缩率]
将各基膜分成300mm宽的样品，并用卷绕器R/M#002(Master Co.,Ltd)以5N的卷绕器张力卷绕各样品，在5℃的低温储存室中储存120小时，随后测定收缩程度。对图2中四个部分的各个长度(d)测定三次，得到低温储存前/后的平均值之差，从而计算热收缩率。
[卷绕形状稳定性]
在5℃下将实施例1和2以及对比例1和2的各个粘合剂膜贴附到夹具上，并以20N推动中心部分(核部分)20秒，随后测定向外侧倾斜的长度。
O：倾斜20mm或更少
X：倾斜大于20mm
图4是粘合剂膜的侧面截面图，表示卷绕形状稳定性的评价；图5是图4中按箭头A方向的粘合剂膜的侧视图，且图6是图4中箭头B方向的粘合剂膜的侧视图。
如图4至6所示，用固定夹具210固定沿轴230卷绕的粘合剂膜200厚度方向的相对末端，并将中间夹具220以长度方向安装在粘合剂膜200的一端。然后，在推动中间夹具220(以图4中的X方向)后，测定倾斜长度。
[四层芯片贴装膜(DAF)辊的热收缩率]
将实施例1中制备的用于半导体装置的粘合剂膜分成300mm宽的样品，并用卷绕器R/M#002(Master Co.,Ltd)以5N的卷绕器张力卷绕200m的膜，在5℃的低温储存室中储存120小时，随后测定收缩程度。对图2中四个部分的各个长度(d)测定三次，得到低温储存前/后的平均值之差，从而计算热收缩率。
如上所述，根据本发明的基膜和使用该基膜的用于半导体装置的粘合剂膜在低温储存较长时间后具有优异的卷绕形状稳定性，从而不出现倾斜现象，因此有利于处理并基本降低在以后的半导体封装工艺中出现的缺陷。
尽管文中已公开了一些实施方式，应理解的是仅以说明的方式提供这些实施方式，并能进行各种修改、变更和置换而不背离本发明的精神和范围。因此，本发明的范围应仅由所附权利要求及其等价物限定。

Claims (7)

1.一种用于半导体装置的粘合剂膜，包括：
基膜，所述基膜在0℃至5℃下具有50μm/m·℃至150μm/m·℃的线性膨胀系数，并且在5℃下放置120小时后具有大于0且小于等于0.1％的热收缩率，
在所述基膜一面上的压敏粘合剂层；以及
依次堆叠在所述压敏粘合剂层一面上的粘结层和保护膜。
2.根据权利要求1所述的粘合剂膜，其中所述基膜包括以下至少一种：聚烯烃膜，包括聚乙烯、聚丙烯、乙烯/丙烯共聚物、聚1-丁烯、乙烯/乙酸乙烯酯共聚物、聚乙烯/苯乙烯丁二烯橡胶混合物；聚氯乙烯；聚对苯二甲酸乙二醇酯、聚碳酸酯、聚甲基丙烯酸甲酯、聚酰亚胺、聚萘二酸乙二醇酯、聚酯砜、聚苯乙烯、聚丙烯酸酯；和热塑性弹性体，包括聚氨酯和聚酰胺-多元醇共聚物。
3.根据权利要求1所述的粘合剂膜，其中所述压敏粘合剂层包括压敏粘合粘结剂、热固化剂和光引发剂。
4.根据权利要求1所述的粘合剂膜，其中所述压敏粘合粘结剂具有100,000至1,000,000的重均分子量。
5.根据权利要求1所述的粘合剂膜，其中所述粘合剂膜在5℃下放置120小时后具有大于0且小于等于0.2％的热收缩率。
6.根据权利要求1所述的粘合剂膜，其中所述粘结层包括丙烯酸树脂和环氧树脂。
7.根据权利要求6所述的粘合剂膜，其中所述丙烯酸树脂具有-30℃至10℃的玻璃化转变温度，且所述环氧树脂为双酚-A环氧树脂、线型酚醛环氧树脂或甲酚醛环氧树脂。
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