CN104221145A - 具有配置为模块的多级引线框的封装半导体器件 - Google Patents

具有配置为模块的多级引线框的封装半导体器件 Download PDF

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Publication number
CN104221145A
CN104221145A CN201380015939.9A CN201380015939A CN104221145A CN 104221145 A CN104221145 A CN 104221145A CN 201380015939 A CN201380015939 A CN 201380015939A CN 104221145 A CN104221145 A CN 104221145A
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China
Prior art keywords
lead frame
lead
leads
leadframe
frame
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Pending
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CN201380015939.9A
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Chinese (zh)
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R·J·塞伊
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Texas Instruments Inc
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49537—Plurality of lead frames mounted in one device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H01L23/49551—Cross section geometry characterised by bent parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/38—Structure, shape, material or disposition of the strap connectors prior to the connecting process of a plurality of strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/3701—Shape
    • H01L2224/37012—Cross-sectional shape
    • H01L2224/37013—Cross-sectional shape being non uniform along the connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/8485—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Lead Frames For Integrated Circuits (AREA)
CN201380015939.9A 2012-03-23 2013-03-25 具有配置为模块的多级引线框的封装半导体器件 Pending CN104221145A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261615002P 2012-03-23 2012-03-23
US61/615,002 2012-03-23
US13/848,771 US8946880B2 (en) 2012-03-23 2013-03-22 Packaged semiconductor device having multilevel leadframes configured as modules
US13/848,771 2013-03-22
PCT/US2013/033728 WO2013142867A1 (en) 2012-03-23 2013-03-25 Packaged semiconductor device having multilevel leadframes configured as modules

Publications (1)

Publication Number Publication Date
CN104221145A true CN104221145A (zh) 2014-12-17

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Country Status (4)

Country Link
US (2) US8946880B2 (enExample)
JP (2) JP2015511073A (enExample)
CN (1) CN104221145A (enExample)
WO (1) WO2013142867A1 (enExample)

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CN107611119A (zh) * 2017-08-24 2018-01-19 杰群电子科技（东莞）有限公司 一种半导体封装器件及其加工方法及电子产品
CN108292609A (zh) * 2015-12-18 2018-07-17 德州仪器公司 具有含多层组装垫的引线框的半导体封装
CN109075151A (zh) * 2016-04-26 2018-12-21 凌力尔特科技有限责任公司 用于组件封装电路的机械配合、和电及热传导的引线框架
CN109564879A (zh) * 2016-07-28 2019-04-02 株式会社东海理化电机制作所 半导体装置的制造方法
CN112018063A (zh) * 2019-05-29 2020-12-01 株式会社电装 半导体封装、半导体装置及半导体封装的制造方法
US11410977B2 (en) 2018-11-13 2022-08-09 Analog Devices International Unlimited Company Electronic module for high power applications
US11749576B2 (en) 2018-03-27 2023-09-05 Analog Devices International Unlimited Company Stacked circuit package with molded base having laser drilled openings for upper package
US11844178B2 (en) 2020-06-02 2023-12-12 Analog Devices International Unlimited Company Electronic component

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US10840005B2 (en) 2013-01-25 2020-11-17 Vishay Dale Electronics, Llc Low profile high current composite transformer
US9515014B2 (en) 2014-10-08 2016-12-06 Infineon Technologies Americas Corp. Power converter package with integrated output inductor
US9496206B2 (en) * 2015-04-10 2016-11-15 Texas Instruments Incorporated Flippable leadframe for packaged electronic system having vertically stacked chips and components
CN106571354B (zh) * 2015-10-09 2018-11-16 台达电子工业股份有限公司 电源变换器及其制造方法
US10998124B2 (en) 2016-05-06 2021-05-04 Vishay Dale Electronics, Llc Nested flat wound coils forming windings for transformers and inductors
JP7160438B2 (ja) 2016-08-31 2022-10-25 ヴィシェイ デール エレクトロニクス エルエルシー 低い直流抵抗を有す高電流コイルを備えた誘導子
US10340210B2 (en) * 2016-09-16 2019-07-02 Texas Instruments Incorporated System in package device including inductor
US10396016B2 (en) * 2016-12-30 2019-08-27 Texas Instruments Incorporated Leadframe inductor
US9935041B1 (en) * 2017-04-06 2018-04-03 Texas Instruments Incorporated Multi-chip module clips with connector bar
DE102017109515B4 (de) 2017-05-04 2024-10-02 Schaeffler Technologies AG & Co. KG Halbleiteranordnung und Verfahren zu deren Herstellung
US10896869B2 (en) * 2018-01-12 2021-01-19 Amkor Technology Singapore Holding Pte. Ltd. Method of manufacturing a semiconductor device
DE102019207012A1 (de) * 2019-05-15 2020-11-19 Zf Friedrichshafen Ag Elektronikmodul zur Leistungssteuerung
JP7286450B2 (ja) * 2019-07-10 2023-06-05 新光電気工業株式会社 電子装置及び電子装置の製造方法
US20210043466A1 (en) * 2019-08-06 2021-02-11 Texas Instruments Incorporated Universal semiconductor package molds
US11158567B2 (en) 2019-08-09 2021-10-26 Texas Instruments Incorporated Package with stacked power stage and integrated control die
US11715679B2 (en) 2019-10-09 2023-08-01 Texas Instruments Incorporated Power stage package including flexible circuit and stacked die
US11302615B2 (en) 2019-12-30 2022-04-12 Texas Instruments Incorporated Semiconductor package with isolated heat spreader
CN111725173A (zh) * 2020-06-05 2020-09-29 杰群电子科技（东莞）有限公司 一种堆叠封装结构及堆叠封装结构的制造方法
GB2603920B (en) * 2021-02-18 2023-02-22 Zhuzhou Crrc Times Electric Uk Innovation Center Power Semiconductor package
US11495549B2 (en) * 2021-02-25 2022-11-08 Texas Instruments Incorporated Electronic device with crack arrest structure
USD1034462S1 (en) 2021-03-01 2024-07-09 Vishay Dale Electronics, Llc Inductor package
US11611170B2 (en) 2021-03-23 2023-03-21 Amkor Technology Singapore Holding Pte. Ltd Semiconductor devices having exposed clip top sides and methods of manufacturing semiconductor devices
US11948724B2 (en) 2021-06-18 2024-04-02 Vishay Dale Electronics, Llc Method for making a multi-thickness electro-magnetic device

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TW201117348A (en) * 2009-11-06 2011-05-16 Mediatek Inc Integrated circuits

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108292609A (zh) * 2015-12-18 2018-07-17 德州仪器公司 具有含多层组装垫的引线框的半导体封装
CN108292609B (zh) * 2015-12-18 2023-04-04 德州仪器公司 具有含多层组装垫的引线框的半导体封装
CN109075151A (zh) * 2016-04-26 2018-12-21 凌力尔特科技有限责任公司 用于组件封装电路的机械配合、和电及热传导的引线框架
US11272618B2 (en) 2016-04-26 2022-03-08 Analog Devices International Unlimited Company Mechanically-compliant and electrically and thermally conductive leadframes for component-on-package circuits
CN109564879A (zh) * 2016-07-28 2019-04-02 株式会社东海理化电机制作所 半导体装置的制造方法
CN107611119A (zh) * 2017-08-24 2018-01-19 杰群电子科技（东莞）有限公司 一种半导体封装器件及其加工方法及电子产品
US11749576B2 (en) 2018-03-27 2023-09-05 Analog Devices International Unlimited Company Stacked circuit package with molded base having laser drilled openings for upper package
US11410977B2 (en) 2018-11-13 2022-08-09 Analog Devices International Unlimited Company Electronic module for high power applications
CN112018063A (zh) * 2019-05-29 2020-12-01 株式会社电装 半导体封装、半导体装置及半导体封装的制造方法
CN112018063B (zh) * 2019-05-29 2025-03-07 株式会社电装 半导体封装、半导体装置及半导体封装的制造方法
US11844178B2 (en) 2020-06-02 2023-12-12 Analog Devices International Unlimited Company Electronic component

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US20130249051A1 (en) 2013-09-26
WO2013142867A1 (en) 2013-09-26
US9177945B2 (en) 2015-11-03
JP6919134B2 (ja) 2021-08-18
JP2015511073A (ja) 2015-04-13
US8946880B2 (en) 2015-02-03
US20150099329A1 (en) 2015-04-09
JP2018137466A (ja) 2018-08-30

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