CN104157541B - 等离子体处理装置 - Google Patents

等离子体处理装置 Download PDF

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Publication number
CN104157541B
CN104157541B CN201410203140.9A CN201410203140A CN104157541B CN 104157541 B CN104157541 B CN 104157541B CN 201410203140 A CN201410203140 A CN 201410203140A CN 104157541 B CN104157541 B CN 104157541B
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CN
China
Prior art keywords
power
high frequency
plasma
synthesizer
oscillating
Prior art date
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CN201410203140.9A
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English (en)
Chinese (zh)
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CN104157541A (zh
Inventor
佐藤亮
内藤启
里吉务
古屋敦城
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN104157541A publication Critical patent/CN104157541A/zh
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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CN201410203140.9A 2013-05-14 2014-05-14 等离子体处理装置 Active CN104157541B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-101827 2013-05-14
JP2013101827A JP6126905B2 (ja) 2013-05-14 2013-05-14 プラズマ処理装置

Publications (2)

Publication Number Publication Date
CN104157541A CN104157541A (zh) 2014-11-19
CN104157541B true CN104157541B (zh) 2017-09-22

Family

ID=51883016

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410203140.9A Active CN104157541B (zh) 2013-05-14 2014-05-14 等离子体处理装置

Country Status (4)

Country Link
JP (1) JP6126905B2 (ja)
KR (1) KR101792310B1 (ja)
CN (1) CN104157541B (ja)
TW (1) TWI627654B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6670697B2 (ja) * 2016-04-28 2020-03-25 東京エレクトロン株式会社 プラズマ処理装置
US10504699B2 (en) * 2018-04-20 2019-12-10 Applied Materials, Inc. Phased array modular high-frequency source

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH056799A (ja) * 1991-06-27 1993-01-14 Yokogawa Electric Corp Ｉｃｐ用ｒｆ電源装置
JPH07161494A (ja) * 1993-12-08 1995-06-23 Jeol Ltd Ｒｆ電源
US5712592A (en) * 1995-03-06 1998-01-27 Applied Materials, Inc. RF plasma power supply combining technique for increased stability
US6043607A (en) * 1997-12-16 2000-03-28 Applied Materials, Inc. Apparatus for exciting a plasma in a semiconductor wafer processing system using a complex RF waveform
JP3544136B2 (ja) * 1998-02-26 2004-07-21 キヤノン株式会社 プラズマ処理装置及びプラズマ処理方法
US6157258A (en) * 1999-03-17 2000-12-05 Ameritherm, Inc. High frequency power amplifier
JP3942315B2 (ja) * 1999-07-21 2007-07-11 日本電子株式会社 高周波電源
JP2002110566A (ja) * 2000-10-02 2002-04-12 Mitsubishi Heavy Ind Ltd 高周波プラズマ生成装置
JP3897582B2 (ja) * 2000-12-12 2007-03-28 キヤノン株式会社 真空処理方法、真空処理装置、半導体装置の製造方法および半導体装置
CN1305353C (zh) * 2001-12-10 2007-03-14 东京毅力科创株式会社 高频电源及其控制方法、和等离子体处理装置
JP3992580B2 (ja) * 2002-10-01 2007-10-17 東京エレクトロン株式会社 プラズマ処理装置
KR100783983B1 (ko) * 2003-01-16 2007-12-11 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 고주파 전력 공급장치 및 플라즈마 발생장치
CN2678152Y (zh) * 2003-12-31 2005-02-09 江阴市新潮科技有限公司 射频功率合成器
JP4773165B2 (ja) * 2005-08-31 2011-09-14 株式会社ダイヘン 高周波電源装置
JP2007103970A (ja) * 2007-01-09 2007-04-19 Masayoshi Murata 電極への電力供給方法、該電力供給方法を用いたプラズマ表面処理方法及びプラズマ表面処理装置
JP4288307B2 (ja) * 2007-03-30 2009-07-01 三井造船株式会社 プラズマ電子温度の測定方法および装置
CN101287327B (zh) * 2007-04-13 2011-07-20 中微半导体设备(上海)有限公司 射频功率源系统及使用该射频功率源系统的等离子体反应腔室
KR101003382B1 (ko) * 2008-02-13 2010-12-22 주식회사 유진테크 플라즈마 처리장치 및 방법
US7811410B2 (en) * 2008-06-19 2010-10-12 Lam Research Corporation Matching circuit for a complex radio frequency (RF) waveform
CN201478679U (zh) * 2009-08-25 2010-05-19 深圳市大族激光科技股份有限公司 一种射频电源装置
CN101640369B (zh) * 2009-08-25 2011-05-25 深圳市大族激光科技股份有限公司 一种射频电源装置
CN201629893U (zh) * 2009-11-16 2010-11-10 地质矿产部北京地质仪器厂 电感耦合等离子体光源功率控制装置
DE102010002753B4 (de) * 2010-03-11 2012-03-29 Hüttinger Elektronik Gmbh + Co. Kg Plasmaversorgungsanordnung mit mehreren Leistungskopplungsstufen
JP6049047B2 (ja) * 2011-09-30 2016-12-21 Ｎｅｃスペーステクノロジー株式会社 冗長化増幅器及びその切替方法

Also Published As

Publication number Publication date
CN104157541A (zh) 2014-11-19
JP2014222717A (ja) 2014-11-27
TW201511074A (zh) 2015-03-16
KR101792310B1 (ko) 2017-11-01
JP6126905B2 (ja) 2017-05-10
KR20140134613A (ko) 2014-11-24
TWI627654B (zh) 2018-06-21

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