CN104157541B - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
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- CN104157541B CN104157541B CN201410203140.9A CN201410203140A CN104157541B CN 104157541 B CN104157541 B CN 104157541B CN 201410203140 A CN201410203140 A CN 201410203140A CN 104157541 B CN104157541 B CN 104157541B
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- 238000000034 method Methods 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 28
- 230000003321 amplification Effects 0.000 claims description 26
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 26
- 238000001020 plasma etching Methods 0.000 description 52
- 239000007789 gas Substances 0.000 description 33
- 239000000758 substrate Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 14
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 238000003851 corona treatment Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000803 paradoxical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of plasma processing apparatus for the high frequency electric source for having and can easily tackling high output.The first high frequency power portion (65) of the present invention has power control part (130), high frequency electric source (140) and synthesizer (150).Multiple enlarging sections (142) are connected on synthesizer (150) parallel to each other, and synthesizer (150) is synthesized to the RF power after being amplified by each enlarging section (142).Synthesizer (150) is connected with matching box (63), by synthesizer (150) synthesize after RF power via matching box (63) be supplied to the shower nozzle worked as upper electrode (31).
Description
Technical field
It the present invention relates to the use of RF power processing gas is plasmarized, it is real to handled object using the plasma
Apply the plasma processing apparatus of the processing such as etching.
Background technology
In the manufacturing processes such as the flat-panel monitor (FPD) using liquid crystal display device as representative, using to glass substrate etc.
Plasma-etching apparatus that handled object implements etching process, the plasma CVD equipment etc. for implementing into film process etc. from
Daughter processing unit.
It is known to have in the electrode supply high frequency electric power for example to parallel plate-type, using being formed at the interelectrode electric capacity coupling
In the Etaching device for closing the etching that plasma carries out handled object, the side connection plasma for the electrode being oppositely arranged above and below
The high frequency electric source of body formation.When such Etaching device is started, by from high frequency electric source to electrode supply high frequency electric power,
Plasma is formed between the electrode of parallel plate-type.
In recent years, FPD glass substrate maximizes, and the length for having had its one side exceedes 2m glass substrate.
With the maximization of such handled object, plasma processing apparatus also maximizes, and used high frequency electric source also requires that height
Output.
The content of the invention
The technical problem solved is wanted in invention
With the maximization of plasma processing apparatus, required RF power is in from several kW to becoming that tens of kW increase
, there is the limit in terms of difficulty (hurdle) and cost technically are tackled by the high output of high frequency electric source to this in gesture.
Therefore, it is an object of the invention to provide it is a kind of have can easily tackle high output high frequency electric source etc.
Gas ions processing unit.
Technical scheme for solving technical problem
The plasma processing apparatus of the present invention includes：Store the process container of handled object；It is used for output above-mentioned
The plasma processing apparatus of the high frequency power portion of the RF power of generation plasma in process container.The present invention grade from
In daughter processing unit, above-mentioned high frequency power portion includes；Generate one or more oscillating portions of high-frequency signal；Based on being shaken by above-mentioned
The high-frequency signal of portion's generation is swung, multiple power amplification portions that power amplification (electric power amplification) obtains RF power are carried out；It will come from
The electric power combining unit of the RF power synthesis in each power amplification portion, wherein above-mentioned multiple power amplification portions are connected to parallel to each other
In electric power combining unit；Multiple supply lines of above-mentioned power amplification portion and above-mentioned electric power combining unit are connected with equal path length；
With the first control unit for controlling above-mentioned oscillating portion.
The present invention plasma processing apparatus in or above-mentioned first control unit be controlled so that from one
The high-frequency signal that individual above-mentioned oscillating portion is not sent out to multiple above-mentioned power amplifying parts is same phase.In this case, can also
It is that the multiple transmitting paths for sending high-frequency signal to multiple above-mentioned power amplification portions from an above-mentioned oscillating portion are arranged to equal
Path length.
In the plasma processing apparatus of the present invention or a pair of above-mentioned oscillating portion and above-mentioned power amplification portion 1
Ground is answered to set, above-mentioned first control unit is controlled so that other to above-mentioned multiple power amplifying parts from multiple above-mentioned oscillating portions
The high-frequency signal of submitting is same phase.In this case or from multiple above-mentioned oscillating portions to multiple above-mentioned power amplifications
Multiple transmitting paths that portion sends high-frequency signal respectively are arranged to equal path length.
The plasma processing apparatus of the present invention or second control also with above-mentioned first control unit of control
Portion.
Invention effect
According to the present invention, high frequency power portion includes multiple power amplification portions and electric power combining unit, so can be by by each work(
RF power after the amplification of rate enlarging section synthesizes a RF power in electric power combining unit.Therefore, even if from each power
The output of enlarging section is constant big, also can greatly be exported, can realize the reply of the maximization of plasma processing apparatus.
In addition, in the plasma processing apparatus of the present invention, with equal path length connection power amplification portion
With multiple supply lines of electric power combining unit, so the RF power after being amplified by each power amplification portion is arranged as in phase
It is sent to electric power combining unit.Therefore, in the plasma processing apparatus of the present invention, can easily it be carried out in electric power combining unit
To the merging of single RF power.
Brief description of the drawings
Fig. 1 is the sectional view for the plasma-etching apparatus for schematically showing the first embodiment of the present invention.
Fig. 2 is the block diagram of the hardware configuration for the control unit for representing Fig. 1.
Fig. 3 is the block diagram of the structure for the first high frequency power portion for illustrating first embodiment.
Fig. 4 is the block diagram of the structure for the first high frequency power portion for illustrating second embodiment.
Fig. 5 is the block diagram of the structure for the first high frequency power portion for illustrating the 3rd embodiment.
Fig. 6 is the block diagram of the structure for the first high frequency power portion for illustrating the 4th embodiment.
Description of reference numerals
1 ... process container；1a ... bottom walls；1b ... sides wall；1c ... lids；11 ... pedestals；12 ... base materials；
13rd, 14 ... seal members；15 ... insulating elements；31 ... shower nozzles；33 ... gas diffusion spaces；35 ... gases are discharged
Hole；37 ... gas introduction ports；39 ... processing gas supply pipes；41 ... valves；43 ... mass flow controllers (MFC)；
45 ... gas supply sources；51 ... exhaust openings；53 ... blast pipes；53a ... flange parts；55 ... APC valves；
57 ... exhaust apparatus；61 ... supply lines；63 ... matching boxes (M.B.)；65 ... first high frequency power portions；71 ... supply
Electric wire；73 ... matching boxes (M.B.)；75 ... second high frequency power portions；100 ... plasma-etching apparatus；130……
Power control part；131 ... vibrational control portions；132 ... electric power control portions；140 ... high frequency electric sources；141 ... oscillating portions；
142 ... enlarging sections；150 ... synthesizers；160 ... signal cables；170 ... coaxial cables.
Embodiment
Below, embodiments of the present invention are described in detail referring to the drawings.
[first embodiment]
Fig. 1 is the outline knot of the plasma-etching apparatus for the first embodiment for being denoted as the processing unit of the present invention
The sectional view of structure.As shown in figure 1, plasma-etching apparatus 100 is configured to the glass to such as FPD as handled object
The parallel flat plasma-etching apparatus for the capacitively coupled that substrate (hereinafter referred to as " substrate ") S is etched.In addition, making
For FPD, liquid crystal display (LCD), electroluminescent (Electro Luminescence are illustrated：EL) display, plasma display
Show panel (PDP) etc..
There is the plasma-etching apparatus 100 inner side to be anodized being formed by aluminium for (alumite processing) mistake
It is configured to the process container 1 of square tube shape.The main body (vessel) of process container 1 (only illustrates 2 by bottom wall 1a, 4 side wall 1b
It is individual) constitute.In addition, being configured with lid 1c on the top of the main body of process container 1.Although diagram is omitted, in side, wall 1b is set
There are substrate conveyance opening and the gate valve (gate valve) being sealed against.In addition, process container 1 is grounded.
Lid 1c being capable of opposing sidewalls 1b opening and closings using switching mechanism (not shown).The lid in the state of lid 1c is closed
1c and each side wall 1b bonding part, is sealed by O-ring 3, keeps the air-tightness in process container 1.
Bottom in process container 1 configures the insulating element 10 of framed shape.Work is provided with insulating element 10
For the pedestal (Susceptor) 11 for the mounting table that can load substrate S.The pedestal 11 of lower electrode is also served as, with base material 12.
Base material 12 is formed such as the conductive material as aluminium, stainless steel (SUS).Base material 12 is configured on insulating element 10, at two
The bonding part of part is configured with the seal members such as O-ring 13 to maintain air-tightness.In insulating element 10 and the bottom wall of process container 1
Also air-tightness is maintained between 1a using the seal members such as O-ring 14.The sidepiece periphery of base material 12 is surrounded by insulating element 15.By
This, it is ensured that the insulating properties of the side of pedestal 11, prevent paradoxical discharge during corona treatment.
It is parallel with the pedestal 11 and be oppositely disposed the shower nozzle played a role as upper electrode in the top of pedestal 11
31.Shower nozzle 31 is supported in the lid 1c on the top of process container 1.Shower nozzle 31 is in hollow form, and being internally provided with gas at it expands
Dissipate space 33.In addition, shower nozzle 31 lower surface (opposite face with pedestal 11) be formed with discharge processing gas multiple gases
Tap 35.The shower nozzle 31 constitutes a pair of parallel plate electrode together with pedestal 11.
Gas introduction port 37 is provided near the center upper portion of shower nozzle 31.Supplied in the gas introduction port 37 and processing gas
Connected to pipe 39.The processing gas supply pipe 39, is used for via 2 valves 41,41 and mass flow controller (MFC) 43 with supplying
The gas supply source 45 of the processing gas of etching is connected.As processing gas except such as halogen gas, O2, can beyond gas
Use the rare gas such as Ar gas.
Bottom wall 1a in process container 1 is formed with the exhaust opening 51 of insertion many places (such as at 8).Each exhaust is with opening
Mouth 51 is connected with blast pipe 53.Blast pipe 53 has flange part 53a in its end, between flange part 53a and bottom wall 1a
The state for being provided with O-ring (omitting diagram) is fixed.Blast pipe 53 is provided with APC valves 55, and blast pipe 53 and exhaust
Device 57 is connected.Exhaust apparatus 57 possesses the vavuum pump such as turbomolecular pump, thus, it is possible to be evacuated in process container 1
Defined reduced atmosphere.
Shower nozzle 31 is connected with supply lines 61.The supply lines 61 is via the of matching box (M.B.) 63 and plasma formation
One high frequency power portion 65 is connected.Thus, from the first high frequency power portion 65 using such as 13.56MHz high frequency power supply to as
The shower nozzle 31 of upper electrode.
The base material 12 of pedestal 11 is connected with supply lines 71.The supply lines 71 is via matching box (M.B.) 73 and bias (bias)
Second high frequency power portion 75 is connected.Thus, from the second high frequency power portion 75 by such as 3.2MHz high frequency power supply to
It is used as the pedestal 11 of lower electrode.In addition, supply lines 71 is through being formed from the bottom wall 1a power supply as pass through openings portion with opening
Mouth 77 is imported into process container 1.
A side is provided with matching box (M.B.) 63 to be for example connected with the first high frequency power portion 65 via coaxial cable
Match circuit (omit diagram), the another side of the match circuit is connected with as the shower nozzle 31 of upper electrode.Match circuit
Impedance with plasma correspondingly carry out between load (plasma) and the first high frequency power portion 65 impedance adjustment (
With), play the effect for the reflection wave attenuation for making to be produced in the circuit of plasma-etching apparatus 100.
A side is provided with matching box (M.B.) 73 to be for example connected with the second high frequency power portion 75 via coaxial cable
Match circuit (omit diagram), the another side of the match circuit is connected with as the pedestal 11 of lower electrode.Match circuit
Impedance with plasma correspondingly carry out between load (plasma) and the second high frequency power portion 75 impedance adjustment (
With), play the effect for the reflection wave attenuation for making to be produced in the circuit of plasma-etching apparatus 100.
Each constituting portion of plasma-etching apparatus 100 is connected with as the control unit 80 of the second control unit, by control unit
80 are uniformly controlled.Control unit 80 is the assembly controller (Module of each constituting portion of control plasma-etching apparatus 100
Controller).Control unit 80 is connected with I/O components (not shown).The I/O components have multiple I/O portions, are lost with plasma
Each terminal device (End device) connection of engraving device 100.It is provided with I/O portions for controlling data signal, analog signal
With the I/O plates (board) of the input and output of serial signal.To the control signal of each terminal device, exported respectively from I/O portions.Separately
Outside, the output signal from each terminal device is respectively inputted to I/O portions.In plasma-etching apparatus 100, as with I/
O portions connection terminal device, can for example there are mass flow controller (MFC) 43, APC valves 55, exhaust apparatus 57,2
Matching box 63,73,2 high frequency power portions (the first high frequency power portion 65, the second high frequency power portion 75) etc..
Then, reference picture 2 is illustrated to one of the hardware configuration of control unit 80.Control unit 80 includes：Master control part
101st, the output device 103 such as the input unit such as keyboard, mouse 102, printer, display device 104, storage device 105, outside connect
Mouth 106 and the bus (bus) 107 interconnected with them.Master control part 101 has CPU (central processing unit) 111, RAM
(random access memory) 112 and ROM (read-only storage) 113.As long as storage device 105 being capable of storage information, its shape
Formula is not limited, and can be such as hard disk unit or optical disc apparatus.In addition, the note that storage device 105 can be read to computer
The record information of recording medium 115, reads information from recording medium 115 in addition.As long as recording medium 115 is able to record that information,
Its form is not limited, and can be such as hard disk, CD, flash memory.Recording medium 115 can also be record present embodiment
The recording medium of the scheme (Recipe) of plasma-etching method.
In control unit 80, CPU111 is with RAM112 as working region, and execution is stored in ROM113 or storage device 105
In program, thus in the plasma-etching apparatus 100 of present embodiment to substrate S perform plasma etch process.
Then, the structure of 3 pair of first high frequency power portion 65 of reference picture is illustrated.Fig. 3 is to represent the first high frequency power portion
The block diagram of 65 detailed construction.First high frequency power portion 65 includes power control part 130, the multiple high frequencies as the first control unit
Power supply 140 and synthesizer 150.Here, the high frequency electric source 140 of present embodiment has：Generate the oscillating portion 141 of high-frequency signal；
With enlarging section 142, it is carried out power amplification and is obtained RF power based on the high-frequency signal generated by each oscillating portion 141.In Fig. 3
There are 4 high frequency electric sources 140 exemplified with as the first high frequency power portion 65.
Command signal generation high-frequency signal of the oscillating portion 141 based on power control part 130.The frequency of the high-frequency signal can
Determined according to the high frequency of plasma load is supplied to.
Command signal of the enlarging section 142 based on power control part 130 controls shaking for the high-frequency signal generated by oscillating portion 141
Width and make power amplification.In addition, enlarging section 142 can also have detection to be sent to load (plasma) from enlarging section 142
Traveling wave power (traveling wave electric power) PF and the reflected wave powers (power of reflected wave) gone from load (plasma) to enlarging section 142
REF sensor (omitting diagram).The sensor detects traveling wave power P F and reflected wave powers REF, by traveling wave power P F inspection
The detection signal for surveying signal and reflected wave powers REF is sent to power control part 130.
Multiple enlarging sections 142 are connected on synthesizer 150 parallel to each other, and synthesizer 150 will be amplified by each enlarging section 142
RF power synthesis afterwards.That is, the RF power for being amplified to regulation power by each enlarging section 142 is sent to synthesizer 150, is closed
As a RF power.In addition, synthesizer 150 is connected with matching box 63.By synthesizer 150 synthesize after RF power, warp
The shower nozzle 31 worked as upper electrode is supplied to by matching box 63.
Power control part 130 has vibrational control portion 131 and electric power control portion 132, controls high frequency electric source 140.Power supply control
Portion 130 processed is the next control unit controlled by upper control unit 80.That is, control unit 80 carries out plasma-etching apparatus
100 overall control, power control part 130 carries out the control of high frequency electric source 140 under the control of upper control unit 80.Power supply
The hardware configuration of control unit 130 is identical with the structure shown in Fig. 2.Therefore, the symbol that Fig. 2 is also quoted in the following description is carried out
Explanation.Vibrational control portion 131 and the function of electric power control portion 132, RAM112 is performed deposit by CPU111 as working region
The software (program) that is stored in ROM113 or storage device 105 is realized.
Power control part 130 will control to believe based on scheme (Recipe), parameter being pre-stored in storage device 105 etc.
Oscillating portion 141 and the enlarging section 142 of high frequency electric source 140 number are sent to, power supply is controlled so that in plasma-etching apparatus
Desired plasma etch process is carried out in 100.For example, vibrational control portion 131 controls the oscillation action of oscillating portion 141, make
The phase for obtaining the high-frequency signal generated by multiple oscillating portions 141 is same phase.In addition, electric power control portion 132, from enlarging section 142
The sensor receives traveling wave power P F as feedback signal, based on the feedback signal and power command value (power command value)
Deviation carries out feedback control, is controlled such that the power output (output power) of the first high frequency power portion 65 respectively becomes power
Command value.It is in the feedback control of electric power control portion 132, power command value and traveling wave power P F difference signal is defeated as controlling
Go out the command signal generation of power, and be input to enlarging section 142.On the other hand, enlarging section 142 is also inputted from oscillating portion 141
It is used as the high-frequency signal of benchmark.Thus, enlarging section 142 is controlled such that the electric power for being supplied to load (plasma) turns into work(
Rate command value.
In addition, the first high frequency power portion 65 also includes：Connect multiple letters of power control part 130 and each high frequency electric source 140
Number cable 160；With the multiple coaxial cables 170 for connecting each high frequency electric source 140 and synthesizer 150.It is used as the coaxial electrical of supply lines
Cable 170, each enlarging section 142 and synthesizer 150 are connected with equal path length.Like this, by making multiple coaxial cables 170
Equal length, it is with being mutually sent to synthesizer 150 that can arrange the RF power after being amplified by each enlarging section 142.
In addition, the quantity for the high frequency electric source 140 being connected to parallel to each other on synthesizer 150 is not limited to 4, as long as
For more than 2.In addition, though eliminating explanation, the second high frequency power portion 75 can also be used and the first high frequency power portion
65 same structures.
Then, the processing action to plasma-etching apparatus 100 as constructed as above is illustrated.First, not shown
Gate valve open in the state of will as the substrate S of handled object via substrate conveyance with opening utilize carrying device (not shown)
Clamp forks be moved in process container 1, join to pedestal 11.Afterwards, gate valve is closed, using exhaust apparatus 57 by process container
Defined vacuum is evacuated in 1.
Then, valve 41 is opened, by processing gas from gas supply source 45 via processing gas supply pipe 39, gas introduction port
37 imported into the gas diffusion space 33 of shower nozzle 31.Now, the flow control of processing gas is carried out using mass flow controller 43
System.The processing gas in gas diffusion space 33 is directed to, further load is uniformly discharged into via multiple gas discharge holes 35
Substrate S on the base 11 is put, the pressure in process container 1 is maintained defined value.
In this condition shower nozzle 31 is supplied to from the first high frequency power portion 65 by RF power via matching box 63.Thus,
High-frequency electric field is produced between the pedestal 11 as the shower nozzle 31 of upper electrode and as lower electrode, processing gas is dissociated and waited
Gas ions.Etching process is implemented to substrate S using the plasma.In addition, during corona treatment, from the second high-frequency electrical
The RF power of bias is supplied to pedestal 11 by source portion 75 via matching box 73.Thus, the ion in plasma is introduced into
To substrate S.
After etching process is implemented, stop the high-frequency electrical from the first high frequency power portion 65 and the second high frequency power portion 75
The supply of power, after gas importing is stopped, being decompressed to defined pressure in process container 1.Then, gate valve is opened, from base
The clamp forks handing-over substrate S of 11 pairs of carrying devices (not shown) of seat, substrate S is taken out of with opening from the substrate conveyance of process container 1.
Operation more than, the plasma etch process to substrate S terminates.
In the plasma-etching apparatus 100 of present embodiment, the first high frequency power portion 65 includes：Individually have and shake
Swing multiple high frequency electric sources 140 of portion 141 and enlarging section 142；With synthesizer 150.Thereby, it is possible to be given birth to by each high frequency electric source 140
Into RF power a RF power is synthesized in synthesizer 150.Therefore, even if the rated output of each high frequency electric source 140
It is constant big, big output can be also synthesized into, the reply of the maximization of plasma-etching apparatus 100 can be realized.In addition,
, can be in power control part 130 in the case of the RF power that need not be exported greatly in plasma-etching apparatus 100
Control under be controlled so that equably carry out high frequency output from each high frequency electric source 140.
In addition, in the plasma-etching apparatus 100 of present embodiment, passing through the vibrational control of power control part 130
Portion 131 can make the phase of the high-frequency signal generated by multiple oscillating portions 141 consistent.Moreover, the plasma of present embodiment
Etaching device 100 has multiple coaxial cables 170 that each enlarging section 142 and synthesizer 150 are connected with equal path length, institute
It is in phase to be sent to synthesizer 150 so that the RF power after being amplified by each enlarging section 142 can be arranged.Therefore, in this implementation
In the plasma-etching apparatus 100 of mode, the output to single RF power can be easily carried out using synthesizer 150 and is closed
And.
[second embodiment]
Then, reference picture 4 is illustrated to the plasma-etching apparatus of second embodiment of the present invention.This embodiment party
The plasma-etching apparatus of formula, has multiple synthesizers as electric power combining unit in the first high frequency power portion.Below, with
Illustrated centered on difference from the plasma-etching apparatus 100 of first embodiment, for plasma etching
The identical incomplete structure explanation of device 100.
Fig. 4 is the block diagram for the detailed construction for representing the first high frequency power portion 65A.First high frequency power portion 65A includes conduct
The power control part 130 of first control unit, high frequency electric source 140 and multiple synthesizer 150A1,150A2,150B.In addition, first is high
Frequency power portion 65A also has：Connect the signal cable 160 of power control part 130 and high frequency electric source 140；Connect high frequency electric source 140
With synthesizer 150A1,150A2 coaxial cable 171；With connection synthesizer 150A1,150A2 and synthesizer 150B coaxial electrical
Cable 172.
The power control part 130 of present embodiment and the structure of high frequency electric source 140 are identical with first embodiment.Such as Fig. 4
Shown, synthesizer 150A1,150A2,150B rank is layeredly equipped with, the synthesizer with the first stratum from the side of enlarging section 142
150A1,150A2 and the synthesizer 150B of the second stratum.Synthesizer 150A1,150A2 of first stratum are respectively by isometric same
Shaft cable 171,171 is connected with 2 high frequency electric sources 140.The RF power generated respectively by 2 high frequency electric sources 140, by the first rank
Synthesizer 150A1 or synthesizer the 150A2 synthesis of layer.Here, isometric coaxial cable 171,171 with equal path length from
Each enlarging section 142 is connected to synthesizer 150A1 or synthesizer 150A2, so can be by the high frequency after being amplified by each enlarging section 142
It is to be synthesized with by synthesizer 150A1 or synthesizer 150A2 that electric power, which is arranged,.
The synthesizer 150B of second stratum passes through isometric coaxial cable 172,172 and the synthesizer of the first stratum respectively
150A1,150A2 are connected.Therefore, the RF power being respectively synthesized by synthesizer 150A1,150A2 of the first stratum, by second-order
The synthesizer 150B of layer synthesizes a RF power.Here, isometric coaxial cable 172,172 with equal path length from
Each synthesizer 150A1,150A2 are connected to synthesizer 150B, thus RF power can be arranged be with by synthesizer or
150B is synthesized.
Synthesizer 150B is connected with matching box 63.By synthesizer 150B synthesize after RF power, supplied via matching box 63
It is given to the shower nozzle 31 worked as upper electrode.
In the plasma-etching apparatus of present embodiment, from each high frequency electric source 140 to synthesizer 150B path length
Degree is equal.Like this, by multiple synthesizer 150A1,150A2,150B multi-layers stratum shape be equipped with, make to connect parallel to each other
The length of supply lines on to each synthesizer 150A1,150A2,150B is consistent, thus, it is possible to it will be amplified by each enlarging section 142 after
RF power to arrange be with being mutually sent to synthesizer 150B.
In the plasma-etching apparatus of present embodiment, the first high frequency power portion 65A includes：Individually there is vibration
Portion 141 and multiple high frequency electric sources 140 of enlarging section 142；Multiple synthesizer 150A1,150A2, the 150B being equipped with stratum shape.By
This, can finally be synthesized the RF power generated by each high frequency electric source 140 using multiple synthesizer 150A1,150A2,150B
For a RF power.Therefore, even if the output of each high frequency electric source 140 is constant big, also can and exported greatly, can realize
The reply of the maximization of plasma-etching apparatus.In addition, in plasma-etching apparatus, in the high frequency that need not be exported greatly
In the case of electric power, it can be controlled under the control of power control part 130 so that equably enter from each high frequency electric source 140
Row high frequency output.
In addition, in the plasma-etching apparatus of present embodiment, passing through the vibrational control portion of power control part 130
131 can make the phase of high-frequency signal generated by multiple oscillating portions 141 consistent.Moreover, in the plasma of present embodiment
In Etaching device, synthesizer 150B is connected to from each enlarging section 142 with equal path length, so can be by by each enlarging section
RF power after 142 amplifications arranges in phase to be sent to synthesizer 150B.Therefore, in the plasma etching of present embodiment
In device, the output to single RF power can be easily carried out using multiple synthesizer 150A1,150A2,150B and is merged.
The other structures and effect of the plasma-etching apparatus of present embodiment are identical with first embodiment.In addition,
Although eliminating explanation, the second high frequency power portion 75 can also use the structure same with the first high frequency power portion 65A.
[the 3rd embodiment]
Then, reference picture 5 is illustrated to the plasma-etching apparatus of third embodiment of the present invention.This embodiment party
The plasma-etching apparatus of formula, there is high frequency electric source 140A, high frequency electric source 140A to have one in the first high frequency power portion
Individual oscillating portion 141 and the multiple enlarging sections 142 being connected to parallel to each other on the oscillating portion 141.Below, with the first embodiment party
Illustrated centered on the difference of the plasma-etching apparatus 100 of formula, for the identical of plasma-etching apparatus 100
Incomplete structure explanation.
Fig. 5 is the block diagram for the detailed construction for representing the first high frequency power portion 65B.First high frequency power portion 65B includes conduct
Power control part 130, high frequency electric source 140A and the synthesizer 150 of first control unit.High frequency electric source 140A has an oscillating portion
141 and multiple enlarging sections 142 for being connected to parallel to each other on the oscillating portion 141.In addition, the first high frequency power portion 65B also has
Have：Connect the signal cable 161 of power control part 130 and oscillating portion 141；Connect the branch of oscillating portion 141 and each enlarging section 142
Signal cable 162；With the multiple coaxial cables 170 for connecting each enlarging section 142 and synthesizer 150.As shown in figure 5, signal is electric
Cable 162 is 1 in the side being connected with oscillating portion 141, then, branches into 2 in the way gone to each enlarging section 142, and then
2 of branch each branch into 2, thus finally branch into 4 and are connected with 4 enlarging sections 142.
The power control part 130 of present embodiment and the structure of synthesizer 150 are identical with first embodiment.Such as Fig. 5 institutes
Show, in the present embodiment, high frequency electric source 140A has an oscillating portion 141.In addition, using the signal cable 162 of branch, respectively
Enlarging section 142 turns into isometric to the distance of each enlarging section 142 parallel to each other and from oscillating portion 141 and is connected to oscillating portion 141
On.Therefore, the high-frequency signal generated by oscillating portion 141, is equally distributed to a large each enlarging section 142, and by with mutually transmission.
In each enlarging section 142, high-frequency signal is amplified and synthesizer 150 is passed out to as RF power.Coaxial cable 170 is with equal
Path length connects each enlarging section 142 and synthesizer 150.Like this, by making the equal length of multiple coaxial cables 170, energy
RF power after enough being amplified by each enlarging section 142 arranges mutually is sent to synthesizer 150 to be same.
In the plasma-etching apparatus of present embodiment, the first high frequency power portion 65B includes：With an oscillating portion
The 141 and high frequency electric source 140A of multiple enlarging sections 142；With synthesizer 150.Thereby, it is possible to it will be amplified by each enlarging section 142 after
RF power synthesizes a RF power in synthesizer 150.Therefore, even if the output of each enlarging section 142 is constant big, also can
Enough exported greatly, the reply of the maximization of plasma-etching apparatus can be realized.
In addition, in the plasma-etching apparatus of present embodiment, being given birth to by a high frequency electric source 140A oscillating portion 141
Into high-frequency signal, by the control in vibrational control portion 131, be equally distributed to a large and respectively put via the signal cable 162 of branch
Big portion 142, and by with mutually transmission.In each enlarging section 142, conjunction is passed out to using high-frequency signal amplification as RF power
Grow up to be a useful person 150.In the plasma-etching apparatus of present embodiment, with equal each enlarging section 142 of path length connection
With multiple coaxial cables 170 of synthesizer 150, so can by the RF power after being amplified by each enlarging section 142 arrange be same
Mutually it is sent to synthesizer 150.
The other structures and effect of the plasma-etching apparatus of present embodiment are identical with first embodiment.In addition,
In the present embodiment, will be by each amplification with second embodiment it is equally possible that multiple synthesizer ranks are layeredly equipped with
RF power after portion 142 amplifies finally synthesizes a RF power using multiple synthesizers.
[the 4th embodiment]
Then, the plasma-etching apparatus of 6 pairs of reference picture the 4th embodiment of the invention is illustrated.This embodiment party
The plasma-etching apparatus of formula, oscillating portion is provided with power control part.Below, with the plasma with first embodiment
Illustrated centered on the difference of Etaching device 100, for being said with the identical incomplete structure of plasma-etching apparatus 100
It is bright.
Fig. 6 is the block diagram for the detailed construction for representing the first high frequency power portion 65C.First high frequency power portion 65C includes conduct
Power control part 130A, multiple enlarging sections 142 and the synthesizer 150 of first control unit.There is power control part 130A vibration to control
Portion 131 processed, electric power control portion 132 and an oscillating portion 133.In addition, the first high frequency power portion 65C also has：Connect power supply control
Portion 130A processed oscillating portion 133 and the signal cable 163 of the branch of multiple enlarging sections 142；With connection enlarging section 142 and synthesizer
150 coaxial cable 170.As shown in fig. 6, signal cable 163 the side being connected with oscillating portion 133 be 1, then, to
Branch into 2 in the way that each enlarging section 142 is gone, and then 2 of branch each branch into 2, thus finally branch into 4 and 4
Individual enlarging section 142 is connected.Like this, using the signal cable 163 of branch, multiple enlarging sections 142 are connected to parallel to each other to shake
Swing in portion 133.
The enlarging section 142 of present embodiment and the structure of synthesizer 150 are identical with first embodiment.As shown in fig. 6,
In present embodiment, power control part 130A has an oscillating portion 133.In addition, using the signal cable 163 of branch, respectively putting
Big portion 142 turns into isometric with being connected to oscillating portion 133 parallel to each other and from oscillating portion 133 to the distance of each enlarging section 142
On.Therefore, the high-frequency signal generated by oscillating portion 133, is equally distributed to a large each enlarging section 142, and by with mutually transmission.
In each enlarging section 142, high-frequency signal is amplified and synthesizer 150 is passed out to as RF power.Coaxial cable 170 is with equal
Path length connects each enlarging section 142 and synthesizer 150.Like this, by making the equal length of multiple coaxial cables 170, energy
RF power after enough being amplified by each enlarging section 142 arranges mutually is sent to synthesizer 150 to be same.
In the plasma-etching apparatus of present embodiment, the first high frequency power portion 65C includes multiple Hes of enlarging section 142
Synthesizer 150, so the RF power after being amplified by each enlarging section 142 can be synthesized into a high frequency in synthesizer 150
Electric power.Therefore, even if the output of each enlarging section 142 is constant big, also can and exported greatly, plasma etching can be realized
The reply of the maximization of device.
In addition, in the plasma-etching apparatus of present embodiment, by a power control part 130A oscillating portion 133
The high-frequency signal of generation, by the control in vibrational control portion 131, is equally distributed to a large respectively via the signal cable 163 of branch
Enlarging section 142, and by with mutually transmission.In each enlarging section 142, high-frequency signal is amplified and conjunction is passed out to as RF power
Grow up to be a useful person 150.In the plasma-etching apparatus of present embodiment, with equal each enlarging section 142 of path length connection
With multiple coaxial cables 170 of synthesizer 150, so can by the RF power after being amplified by each enlarging section 142 arrange be same
Mutually it is sent to synthesizer 150.
The other structures and effect of the plasma-etching apparatus of present embodiment are identical with first embodiment.In addition,
In the present embodiment, will be by each amplification with second embodiment it is equally possible that multiple synthesizer ranks are layeredly equipped with
RF power after portion 142 amplifies finally synthesizes a RF power using multiple synthesizers.
More than, embodiments of the present invention are described in detail with the purpose of illustration, but the present invention is not by upper
Embodiment restriction is stated, various modifications can be carried out.For example, in the above-described embodiment, with to upper electrode and lower electrode
The plasma processing apparatus for being supplied respectively to RF power is object, but the present invention can also be equally applicable to upper electrode or
The situation of any folk prescription supply high frequency electric power of lower electrode and upper electrode or lower electrode are supplied more than 2 systems
The situation of RF power.
In addition, in the above-described embodiment, exemplified by the plasma-etching apparatus for listing parallel plate-type, but the present invention
, can not be by special as long as being the plasma processing apparatus to upper electrode and/or lower electrode supply high frequency electric power
The application of limitation ground.It can also apply to the plasma-etching apparatus of the other manner such as inductance coupled plasma device.
In addition, being not limited to device for dry etching, film formation device, cineration device etc. can be also applied equally to.
In addition, the present invention is not limited to, using FPD substrates as handled object, can also apply to such as semiconductor die
Piece, substrate used for solar batteries are the situation of handled object.
Claims (4)
1. a kind of plasma processing apparatus, it is characterised in that including：
Store the process container of handled object；With
The high frequency power portion of the RF power for generating plasma in the process container is exported, wherein,
The high frequency power portion includes；
Generate multiple oscillating portions of high-frequency signal；
Based on the high-frequency signal generated by the oscillating portion, multiple power amplification portions that power amplification obtains RF power are carried out；
RF power from each power amplification portion is synthesized to the electric power combining unit of single RF power, wherein, it is multiple described
Power amplification portion is connected in electric power combining unit parallel to each other；
Multiple supply lines of the power amplification portion and the electric power combining unit are connected with equal path length；With
Control the first control unit of the oscillating portion；
The oscillating portion is set correspondingly with the power amplification portion, and first control unit is controlled so that from many
The high-frequency signal that the individual oscillating portion is not sent out to multiple power amplifying parts is same phase.
2. plasma processing apparatus as claimed in claim 1, it is characterised in that：
The electric power combining unit multiple synthesizers that stratum shape is equipped with including multi-layer with by the different synthesizer of stratum
Between multiple supply lines for being attached with equal path length, the RF power from the power amplification portion is by multi-layer
Ground is synthesized.
3. plasma processing apparatus as claimed in claim 1, it is characterised in that：
The multiple transmitting paths for not sending high-frequency signal to multiple power amplifying parts from multiple oscillating portions are arranged to
Equal path length.
4. such as plasma processing apparatus according to any one of claims 1 to 3, it is characterised in that：Also have control described
Second control unit of the first control unit.
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| JP2013-101827 | 2013-05-14 | ||
| JP2013101827A JP6126905B2 (en) | 2013-05-14 | 2013-05-14 | Plasma processing equipment |
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| CN104157541A CN104157541A (en) | 2014-11-19 |
| CN104157541B true CN104157541B (en) | 2017-09-22 |
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| JP (1) | JP6126905B2 (en) |
| KR (1) | KR101792310B1 (en) |
| CN (1) | CN104157541B (en) |
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| JP6670697B2 (en) * | 2016-04-28 | 2020-03-25 | 東京エレクトロン株式会社 | Plasma processing equipment |
| US10504699B2 (en) * | 2018-04-20 | 2019-12-10 | Applied Materials, Inc. | Phased array modular high-frequency source |
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| JPH056799A (en) * | 1991-06-27 | 1993-01-14 | Yokogawa Electric Corp | Rf power supply device for icp |
| JPH07161494A (en) * | 1993-12-08 | 1995-06-23 | Jeol Ltd | Rf power supply |
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| US6043607A (en) * | 1997-12-16 | 2000-03-28 | Applied Materials, Inc. | Apparatus for exciting a plasma in a semiconductor wafer processing system using a complex RF waveform |
| JP3544136B2 (en) * | 1998-02-26 | 2004-07-21 | キヤノン株式会社 | Plasma processing apparatus and plasma processing method |
| US6157258A (en) * | 1999-03-17 | 2000-12-05 | Ameritherm, Inc. | High frequency power amplifier |
| JP3942315B2 (en) * | 1999-07-21 | 2007-07-11 | 日本電子株式会社 | High frequency power supply |
| JP2002110566A (en) * | 2000-10-02 | 2002-04-12 | Mitsubishi Heavy Ind Ltd | High frequency plasma generator |
| JP3897582B2 (en) * | 2000-12-12 | 2007-03-28 | キヤノン株式会社 | Vacuum processing method, vacuum processing apparatus, semiconductor device manufacturing method, and semiconductor device |
| KR100557842B1 (en) * | 2001-12-10 | 2006-03-10 | 동경 엘렉트론 주식회사 | High-frequency power source and its control method, and plasma processor |
| JP3992580B2 (en) * | 2002-10-01 | 2007-10-17 | 東京エレクトロン株式会社 | Plasma processing equipment |
| EP2565903B1 (en) * | 2003-01-16 | 2014-09-10 | Japan Science and Technology Agency | Plasma generator |
| CN2678152Y (en) * | 2003-12-31 | 2005-02-09 | 江阴市新潮科技有限公司 | Radio-frequency power synthesizer |
| JP4773165B2 (en) * | 2005-08-31 | 2011-09-14 | 株式会社ダイヘン | High frequency power supply |
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| KR101003382B1 (en) * | 2008-02-13 | 2010-12-22 | 주식회사 유진테크 | plasma processing apparatus and plasma processing method |
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| CN201629893U (en) * | 2009-11-16 | 2010-11-10 | 地质矿产部北京地质仪器厂 | Inductively-coupled plasma light source power control device |
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| TW201511074A (en) | 2015-03-16 |
| JP2014222717A (en) | 2014-11-27 |
| TWI627654B (en) | 2018-06-21 |
| KR101792310B1 (en) | 2017-11-01 |
| JP6126905B2 (en) | 2017-05-10 |
| KR20140134613A (en) | 2014-11-24 |
| CN104157541A (en) | 2014-11-19 |
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