CN103811300B - Vacuum plant, its compress control method and engraving method - Google Patents
Vacuum plant, its compress control method and engraving method Download PDFInfo
- Publication number
- CN103811300B CN103811300B CN201310549740.6A CN201310549740A CN103811300B CN 103811300 B CN103811300 B CN 103811300B CN 201310549740 A CN201310549740 A CN 201310549740A CN 103811300 B CN103811300 B CN 103811300B
- Authority
- CN
- China
- Prior art keywords
- aperture
- process container
- processing gas
- gas
- control valve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 164
- 230000008569 process Effects 0.000 claims abstract description 110
- 238000012545 processing Methods 0.000 claims abstract description 109
- 239000000758 substrate Substances 0.000 claims description 30
- 238000012544 monitoring process Methods 0.000 claims description 28
- 230000037361 pathway Effects 0.000 claims description 15
- 230000001276 controlling effect Effects 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 230000008859 change Effects 0.000 abstract description 19
- 230000001186 cumulative effect Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 100
- 238000001020 plasma etching Methods 0.000 description 35
- 238000005530 etching Methods 0.000 description 19
- 238000003860 storage Methods 0.000 description 17
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 14
- 230000000630 rising effect Effects 0.000 description 12
- 239000010936 titanium Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000003851 corona treatment Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 208000000058 Anaplasia Diseases 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000803 paradoxical effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
- H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
- H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
- H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
- H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The technical problem to be solved in the present invention is to suppress pressure change drastically using in the pressure controlled vacuum plant in APC valves progress process container main.The step of according to step S1~step S5, process container can be suppressed（1）Interior pressure change.In step sl, EC（81）Obtain APC valves（55）Aperture, in step s 2, utilize EC（81）Aperture determination unit（123）The APC valves obtained in judgment step S1（55）Aperture whether exceed first threshold.When being determined as that aperture exceedes first threshold in step s 2（It is）In the case of, in step s3 more than counter（124）Cumulative 1 counting of count value will be exceeded.Then, in step s 4, carry out by more than counter（124）Whether the aggregate-value more than count value counted has exceeded the judgement of Second Threshold, is being judged to exceeding Second Threshold more than count value（It is）In the case of, flow control unit（121a）Via MC（83）To mass flow controller（MFC）（43）Send control signal so that the flow of processing gas is reduced ormal weight.
Description
Technical field
The present invention relates to the vacuum plant for carrying out corona treatment etc. to handled object, its compress control method and
Engraving method.
Background technology
In FPD（Flat-panel monitor）Manufacturing process in, to FPD with substrate carry out plasma etching, plasma ash
The various corona treatments such as change, plasma deposition.As the device of corona treatment as progress, such as known have
Plasma processing apparatus, the inductively coupled plasma of parallel plate-type（ICP：Inductively Coupled Plasma）
Processing unit etc..These plasma processing apparatus are configured to the vacuum for vacuum state will be decompressed in process container being handled
Device.
As the prior art of the Stress control on vacuum plant, in patent document 1, it is proposed that while by exhaust line
The conductance in footpath（Conduction）Remain necessarily, while utilizing mass flow controller（MFC）Make the gas supplied into process container
Changes in flow rate method.In addition, in patent document 2, it is proposed that flowed by the upstream side of the choke valve in exhaust pathway
The ballasting gas of certain flow adjusts the method for the pressure inside process container.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2002-57089 publications（Fig. 3 etc.）
Patent document 2：Japanese Unexamined Patent Publication 10-11152 publications（Fig. 1 etc.）
The content of the invention
Invention technical problems to be solved
In recent years, in order to be handled with substrate large-scale FPD, process container also maximizes.Therefore, for processing
One, the vavuum pump of decompression exhaust is carried out in container not enough, it is necessary to multiple.In the discharge directions upstream side of these vavuum pumps, set
Automatic pressure controls（Adaptive Pressure Control）Valve（Hereinafter referred to as " APC valves "）, the conductance of exhaust pathway is entered
Row automatically adjusts, and thus adjusts the pressure in process container.For example, in plasma-etching apparatus, using following method：
In processing, while processing gas of the mass flow controller to supply certain flow in process container is being utilized, while utilizing
The conductance of APC valve regulation exhaust pathways, control as desired processing pressure.
But be consumed in processing gas in plasma etching and in processing that gas volume diminishes, it is firm in etching
After end, gas volume can sharp become big.The phenomenon is due to during existing for etch target film and the object film
The consumed processing gas of reaction, be not consumed when etching is carried out, etch target film disappears caused by.When as generation
During Volume Changes drastically, the aperture of APC valves becomes standard-sized sheet and keeps constant, and the Stress control carried out by APC valves does not catch up with.Its
As a result, the problem of pressure while end is etched, in process container sharp rises is generated.After terminating in the presence of etching
Pressure drastically, which rises, to be turned into the reason for producing superfluous free radical and produces and be formed at the pattern form of substrate surface and lose shape（Collapse
Burst）Deng the situation of harm.In order to tackle pressure change as described above, it is necessary to increase the setting number of vavuum pump and APC valves with
Ensure sufficient exhaust capacity, turn into a reason of number of components increase and cost increase.
It is therefore an object of the present invention in the main pressure controlled vacuum plant using in APC valves progress process container
In, suppress pressure change drastically.
For solving the technical scheme of technical problem
The vacuum plant of the present invention possesses：House handled object and inside can be kept to the process container of vacuum；Through
Gas supply source by gas supplying path to supply processing gas in above-mentioned process container；It is arranged at above-mentioned gas feed path
On, flow regulator that the supply flow rate of above-mentioned processing gas is adjusted；Detect the pressure in above-mentioned process container
Pressure-detecting device；The exhaust apparatus being connected via exhaust pathway with above-mentioned process container；It is arranged on above-mentioned exhaust pathway, root
According to the pressure value detected by above-mentioned pressure-detecting device, the APC valves of aperture are automatically regulated；Monitor the aperture of above-mentioned APC valves
Aperture monitoring unit；With the monitoring result according to above-mentioned aperture monitoring unit, the gas using above-mentioned flow regulator to supply
The flow control unit that flow is adjusted.
The present invention vacuum plant in, above-mentioned flow control unit can by by the aperture of above-mentioned APC valves with it is defined
Threshold value is compared and controls above-mentioned flow regulator so that the supply flow rate of above-mentioned processing gas is reduced.
The number that the vacuum plant of the present invention can be also equipped with exceeding the aperture of above-mentioned APC valves first threshold counts
Count section, in the case where the value of above-mentioned counting exceedes Second Threshold, above-mentioned flow control unit controls above-mentioned Flow-rate adjustment dress
Put so that the supply flow rate of above-mentioned processing gas is reduced.
The vacuum plant of the present invention can be also equipped with to the aperture of the above-mentioned APC valves in the range of the defined elapsed time
Increment rate carry out computing aperture operational part, above-mentioned aperture increment rate more than the 3rd threshold value in the case of, above-mentioned flow control
Portion processed controls above-mentioned flow regulator so that the supply flow rate of above-mentioned processing gas is reduced.
The vacuum plant of the present invention can be the Etaching device being etched to handled object.
In the vacuum plant of the present invention, handled object can be FPD substrates.
The compress control method of the present invention is controlled in vacuum plant to the pressure in process container, above-mentioned vacuum holding
Put and possess：House handled object and be configured to remain inside the above-mentioned process container of vacuum state；Via gas
Gas supply source of the feed path to supply processing gas in above-mentioned process container；It is arranged on above-mentioned gas feed path, it is right
The flow regulator that the supply flow rate of above-mentioned processing gas is adjusted；Detect the pressure inspection of the pressure in above-mentioned process container
Survey device；The exhaust apparatus being connected via exhaust pathway with above-mentioned process container；Be arranged on above-mentioned exhaust pathway, according to by
The pressure value that above-mentioned pressure-detecting device detects, automatically regulate the APC valves of aperture.In the compress control method, in monitoring
The aperture of APC valves is stated, according to as a result, the gas flow of supply is adjusted using above-mentioned flow regulator.
The present invention compress control method in, can by by the aperture of above-mentioned APC valves compared with defined threshold value
And it is controlled so that the supply flow rate of above-mentioned processing gas is reduced.
In the compress control method of the present invention, the number that first threshold can be exceeded to the aperture of above-mentioned APC valves is counted
Number, in the case where the count value exceedes Second Threshold, it is controlled such that the supply flow rate of above-mentioned processing gas is reduced.
The present invention compress control method in, can in the range of the defined elapsed time aperture of above-mentioned APC valves
In the case that increment rate is more than the 3rd threshold value, it is controlled such that the supply flow rate of above-mentioned processing gas is reduced.
In the compress control method of the present invention, above-mentioned vacuum plant can be the etching dress being etched to handled object
Put.
In the compress control method of the present invention, handled object can be FPD substrates.
The engraving method of the present invention is etched using Etaching device to handled object, and above-mentioned Etaching device possesses：
House handled object and be configured to remain inside the process container of vacuum state；Via gas supplying path pair
The gas supply source of supply processing gas in above-mentioned process container；It is arranged on above-mentioned gas feed path, to above-mentioned processing gas
The flow regulator that the supply flow rate of body is adjusted；Detect the pressure-detecting device of the pressure in above-mentioned process container；Through
The exhaust apparatus being connected by exhaust pathway with above-mentioned process container；Be arranged on above-mentioned exhaust pathway, according to by above-mentioned pressure
The pressure value that detection means detects, automatically regulate the APC valves of aperture.In the engraving method, above-mentioned APC valves can be monitored
Aperture, according to as a result, the gas flow of supply is adjusted using above-mentioned flow regulator.
, can be by the way that the aperture of above-mentioned APC valves compared with defined threshold value, be made in the engraving method of the present invention
The supply flow rate for stating processing gas is reduced.
In the engraving method of the present invention, the number that first threshold can be exceeded to the aperture of above-mentioned APC valves counts,
In the case that the count value exceedes Second Threshold, reduce the supply flow rate of above-mentioned processing gas.
The present invention engraving method in, can in the range of the defined elapsed time aperture of above-mentioned APC valves increase
In the case that rate is more than the 3rd threshold value, the supply flow rate that being controlled such that makes above-mentioned processing gas is reduced.
Invention effect
According to the present invention, main using in the pressure controlled vacuum plant in APC valves progress process container, monitor
The aperture of APC valves, according to as a result, the flow of the processing gas to importeding into process container is adjusted.For example, in aperture
In the case of rising, gas flow is reduced, utilize suppressing to offset in the pressure in process container to processing gas flow
Rise, thereby, it is possible to relax the pressure in process container to rise.In addition, pressure of the rising of the aperture of APC valves in process container
Occur before rising, therefore, compared with the pressure measurements according to process container make processing gas changes in flow rate, response
It is excellent.Therefore, according to the present invention, for large-scale vacuum plant, the setting number of vavuum pump and APC valves can not also be increased,
And reliably carry out the Stress control in process container.
Brief description of the drawings
Fig. 1 is the section of the structure for the plasma-etching apparatus for schematically showing the first embodiment of the present invention
Figure.
Fig. 2 is the frame of the hardware configuration of the control unit for the plasma-etching apparatus for representing an embodiment of the invention
Figure.
Fig. 3 is the block diagram for the hardware configuration for representing the Setup Controller in Fig. 2.
Fig. 4 is the functional block diagram for the functional structure for representing the Setup Controller in Fig. 2.
Fig. 5 is the flow chart of example the step of representing the compress control method of the first embodiment of the present invention.
Fig. 6 is in process container when representing to carry out etch target film using previous methods plasma etch process
The figure of the time change of pressure and the aperture of APC valves.
Fig. 7 is represented during with Fig. 6 identical plasma etch process, the plasma of generation in process container
The figure of the luminous time change of body.
Fig. 8 is the when anaplasia of the aperture of the APC valves obtained to the compress control method of the first embodiment by the present invention
Change the figure illustrated with the time change of processing gas flow.
Fig. 9 is to represent for the compress control method of the first embodiment of the present invention to be applied to actual plasma etching
The figure of the experimental result of processing.
Figure 10 is the functional block diagram of the functional structure for the Setup Controller for representing second embodiment of the present invention.
The flow chart of one example of the step of Figure 11 is the compress control method for representing second embodiment of the present invention.
Description of reference numerals
1 ... process container
1a ... bottom walls
1b ... side walls
1c ... lids
11 ... pedestals
12 ... base materials
13rd, 14 ... seal members
15 ... insulating elements
31 ... shower nozzles
33 ... gas diffusion spaces
35 ... gas squit holes
37 ... gas introduction ports
39 ... processing gas supply pipes
41 ... valves
43 ... mass flow controllers
45 ... gas supply sources
51 ... exhaust openings
53 ... blast pipes
53a ... flange parts
55 ... APC valves
57 ... exhaust apparatus
61 ... pressure gauges
71 ... supply lines
73 ... matching boxes（M.B.）
75 ... high frequency electric sources
100 ... plasma-etching apparatus.
Embodiment
Hereinafter, embodiments of the present invention are described in detail referring to the drawings.
[first embodiment]
Fig. 1 is the outline knot of the plasma-etching apparatus for the first embodiment for being denoted as the processing unit of the present invention
The sectional view of structure.Fig. 2 is by the sectional view of Fig. 1 major part enlarged representation.As shown in figure 1, plasma-etching apparatus 100
It is configured to the glass substrate to such as FPD as handled object（Hereinafter, it is abbreviated as " substrate "）The electric capacity coupling that S is etched
The parallel flat plasma-etching apparatus of mould assembly.In addition, as FPD, liquid crystal display can be illustrated（LCD）, electroluminescent
（Electro Luminescence；EL）Display, plasma display（PDP）Deng.
The plasma-etching apparatus 100 has has carried out anodized by inner side（Pellumina processing）Aluminium shape
Into the process container 1 for being configured to angle barrel shape.The main body of process container 1（Container body）By bottom wall 1a and 4 side wall 1b（Only
Diagram 2）Form.In addition, the upper bond in the main body of process container 1 has lid 1c.Although diagram is omitted, in side wall
1b is provided with substrate conveyance opening and the gate valve for sealing the substrate conveyance opening.
Lid 1c is configured to switch relative to side wall 1b by switching mechanism (not shown).What lid 1c was closed
State lower cover 1c and each side wall 1b bonding part are sealed by O-ring 3, keep the air-tightness in process container 1.
Bottom in process container 1 configures the insulating element 10 of framed shape.Work is provided with insulating element 10
For the pedestal 11 of substrate S mounting table can be loaded.The pedestal 11 for also serving as lower electrode possesses base material 12.Base material 12 for example by
Aluminium or stainless steel（SUS）Formed Deng conductive material.Base material 12 is configured on insulating element 10, in the bonding part of two parts
Equipped with the seal members such as O-ring 13 to maintain air-tightness.Between insulating element 10 and the bottom wall 1a of process container 1, O is also utilized
The seal members such as type circle 14 maintain air-tightness.The sidepiece periphery of base material 12 is surrounded by insulating element 15.Thus, it is ensured that pedestal 11
The insulating properties of side, prevent paradoxical discharge during corona treatment.
It is parallel with the pedestal 11 and be oppositely disposed the shower nozzle to be worked as upper electrode in the top of pedestal 11
31.Shower nozzle 31 is supported by the lid 1c on the top of process container 1.Shower nozzle 31 is in hollow form, and gas diffusion is internally provided with it
Space 33.In addition, in the lower surface of shower nozzle 31（The face relative with pedestal 11）Formed with the multiple gases spray for spraying processing gas
Portal 35.The shower nozzle 31 is grounded, and a pair of parallel plate electrode is formed together with pedestal 11.
Gas introduction port 37 is provided near the center upper portion of shower nozzle 31.The gas introduction port 37 supplies with processing gas
Pipe 39 connects.The processing gas supply pipe 39 is via 2 valves 41,41 and mass flow controller（MFC）43 are used for supplying
The gas supply source 45 of the processing gas of etching connects.As processing gas, such as except halogen gas, O2Outside gas,
Rare gas such as Ar gases etc. can be used.
Bottom wall 1a in above-mentioned process container 1 is formed with multiple positions（Such as 8 positions）The exhaust of insertion is with opening
Mouth 51.Each exhaust opening 51 is connected with blast pipe 53.Blast pipe 53 has flange part 53a in its end, with the flange part
O-ring is provided between 53a and bottom wall 1a（Diagram is omitted）State fixed.APC valves 55 are provided with blast pipe 53, separately
Outside, blast pipe 53 is connected with exhaust apparatus 57.The vavuum pump such as possessing turbomolecular pump of exhaust apparatus 57, thus, is configured to
Defined reduced atmosphere can will be evacuated in process container 1.Add up to 8 APC valves 55 what each blast pipe 53 was set, by 1
Individual main control valve and 7 servo valves are formed, and each servo valve acts in linkage with main control valve.That is, 8 APC valves 55 enter with being mutually in step
Row switch motion.
In addition, plasma-etching apparatus 100 is provided with the pressure gauge 61 of the pressure in measurement processing container 1.Pressure gauge
61 are connected with the main control valve in 8 APC valves 55, and the measurement result of the pressure in process container 1 is supplied into APC valves in real time
55.APC valves 55 change aperture, automatically adjust the conductance of blast pipe 53 according to the measurement result of pressure gauge 61.
The base material 12 of pedestal 11 is connected with supply lines 71.The supply lines 71 is via matching box（M.B.）73 with high frequency electric source 75
Connection.Thus, such as 13.56MHz RF power is supplied from high frequency electric source 75 to the pedestal 11 as lower electrode.In addition,
Supply lines 71 is directed in process container 1 by the power supply opening 77 for being used as pass through openings portion formed in bottom wall 1a.
Each constituting portion of plasma-etching apparatus 100, turns into and is connected and controlled structure with control unit 80.Reference picture
2, the control unit 80 of the base plate processing system included in a part to the plasma-etching apparatus 100 of present embodiment enters
Row explanation.Fig. 2 is the block diagram for the hardware configuration for representing control unit 80.As shown in Fig. 2 control unit 80 possesses：Setup Controller
（Equipment Controller；Hereinafter, it is designated as sometimes " EC "）81；It is multiple（2 are illustrate only in fig. 2, but it is and unlimited
In this）Module controller（Module Controller；Hereinafter, it is designated as sometimes " MC "）83；With the friendship for connecting EC81 with MC83
Change hub（HUB）85.
EC81 is to be all together multiple MC83, the master control part that the overall action to base plate processing system is controlled.It is multiple
MC83 is respectively the pair that the action to each module headed by plasma-etching apparatus 100 under EC81 control is controlled
Control unit.Switching hub 85 switches the MC83 being connected with EC81 according to the control signal from EC81.
EC81 is according to the control program and note for realizing the various processing to substrate S performed by base plate processing system
Record has the scheme for the treatment of conditions data etc., and control signal is sent to each MC83, and thus, the overall of control base board processing system moves
Make.
Control unit 80 is also equipped with sub-network 87, DIST（Distribution：Distribution）Disk 88 and input and output（It is designated as below
I/O）Module 89.Each MC83 is connected by sub-network 87 and DIST disks 88 with I/O modules 89.
I/O modules 89 have multiple I/O portions 90.I/O portions 90 and each module headed by plasma-etching apparatus 100
Each terminal device connection.Although it is not shown, still, I/O portions 90 are provided with for controlling data signal, analog signal and serial letter
Number input and output I/O disks.The control signal of each terminal device is exported from I/O portions 90 respectively.In addition, come from each terminal
The output signal of equipment is respectively inputted to I/O portions 90.In plasma-etching apparatus 100, as what is be connected with I/O portions 90
Terminal device, for example, mass flow controller can be enumerated（MFC）43rd, APC valves 55, pressure gauge 61, exhaust apparatus 57 etc..
EC81 passes through LAN（Local Area Network：LAN）91 with being used as to being provided with base plate processing system 100
The MES that is managed of overall manufacturing process of factory（Manufacturing Execution System：Manufacture performs system
System）Computer 93 connect.Computer 93 cooperates factory is related with process to the control unit 80 of base plate processing system 100
Real time information feeds back to backbone operation system and considers the progress judgements related to process such as the overall load of factory.Calculate
Machine 93 can be connected with the message processing device such as other computers 95.
Then, reference picture 3 illustrates to an example of EC81 hardware configuration.EC81 possesses：Master control part 101；
The input units such as keyboard, mouse 102；The output devices such as printer 103；Display device 104；Storage device 105；External interface
106；With the bus 107 being connected to each other.Master control part 101 has CPU（Central processing unit）111、RAM（Deposit at random
Access to memory）112 and ROM（Read-only storage）113.As long as storage device 105 can storage information, its form do not limit,
For example, hard disk unit or optical disc apparatus.In addition, storage device 105 records in the recording medium 115 that computer can be read
Information and from recording medium 115 read information.As long as recording medium 115 can storage information, its form do not limit, example
It is such as hard disk, CD, flash memory.Recording medium 115 can be the side for the plasma-etching method that record has present embodiment
The recording medium of case.
In EC81, CPU111 uses RAM112 to perform and stored in ROM113 or storage device 105 as working region
Program, thereby, it is possible to performed in the plasma-etching apparatus 100 of present embodiment to substrate S plasma etching
Processing.In addition, the hardware configuration of the computer 93,95 in Fig. 2 also turns into the structure for example shown in Fig. 3.In addition, shown in Fig. 2
MC83 hardware configuration, for example, by unwanted inscape as the structure shown in Fig. 3 or from the structure shown in Fig. 3
Structure obtained from removing.
Then, reference picture 4 illustrates to EC81 functional structure.Fig. 4 is the functional block for the functional structure for representing EC81
Figure.In addition, in the following description, the hardware configuration as EC81 turns into the part of the structure shown in Fig. 3, also referring in Fig. 3
Symbol.As shown in figure 4, EC81 possess processing control unit 121, aperture monitoring unit 122, aperture determination unit 123, more than counter
124 and input and output control unit 125.They use RAM112 to be used as working region and performed in ROM113 or storage by CPU111
The program that is stored in device 105 is realized.
Processing control unit 121 sends to each MC83 and controlled according to the scheme, the parameter etc. that are pre-stored in storage device 105
Signal processed, thus it is controlled such that in plasma-etching apparatus 100 and carries out desired plasma etch process.Separately
Outside, processing control unit 121 has flow control unit 121a.
Aperture monitoring unit 122 monitors the aperture of APC valves 55, obtains its information in real time.Specifically, APC valves 55 are opened
Degree is for example divided into 0~1,000 1000 grades, as numeral input（DI）Information from APC valves 55 by MC83 in real time
Sent out to aperture monitoring unit 122.In addition, it not is to be attached to EC81 but be attached to APC valves 55 that aperture monitoring unit 122, which can be used as,
Function exist.In this case, the MC83 for being capable of using plasma Etaching device 100 is obtained as from APC valves 55
Numeral input（DI）The aperture of information, and to EC81 send structure.
Aperture determination unit 123 is with reference to aperture monitoring unit 122（Or the aperture function for monitoring of APC valves 55）Obtain in real time
The aperture of APC valves 55, carries out whether aperture has exceeded defined threshold value（For example, first threshold）Judgement.Here, with regard to the first threshold
For value, aperture determination unit 123 is with reference to pre-saving the value in storage device 105 as parameter.
Result of determination more than counter 124 with reference to aperture determination unit 123, in the case where aperture exceedes first threshold,
By cumulative 1 counting of its number.
Input and output control unit 125 carries out the control of the input from input unit 102, the output to output device 103
Control, the control, the input and output with the data of outside etc. that are carried out by external interface 106 that show in display device 104
Control.
Flow control unit 121a control valves 41,41 and mass flow controller（MFC）43, to from gas supply source 45 to
The flow of the processing gas of supply is controlled in process container 1.In addition, flow control unit 121a is carried out by more than counter
124 countings exceed whether count value has exceeded defined threshold value（Second Threshold）Judgement and exceed more than count value
In the case of Second Threshold, by MC83 to mass flow controller（MFC）43 send control signal so that make processing gas
Flow reduces ormal weight.Thus, mass flow controller（MFC）43 make the flow of processing gas reduce ormal weight.Here, with regard to
For two threshold values, flow control unit 121a is pre-saved in storage device 105 with reference to the part as parameter or scheme
Value.In addition, the decrement with regard to processing gas（V0-V1）For, flow control unit 121a references also serve as the one of parameter or scheme
Part pre-saves the value in storage device 105.
Then, the processing action of the plasma-etching apparatus 100 to such as being formed with upper type illustrates.First, exist
In the state of gate valve (not shown) opens, using the fork of carrying device (not shown), using as the substrate S of handled object, lead to
Substrate conveyance opening is crossed, is moved in process container 1, is handover to pedestal 11.Then, gate valve is closed, utilizes exhaust apparatus
57 will be evacuated to defined vacuum in process container 1.
Then, valve 41 is opened, from gas supply source 45 by processing gas supply pipe 39 and gas introduction port 37 to
The gas diffusion space 33 of shower nozzle 31 imports processing gas.Now, the stream of processing gas is carried out using mass flow controller 43
Amount control.The processing gas in gas diffusion space 33 is directed to, further by multiple squit holes 35 to being positioned in pedestal
Substrate S on 11 equably sprays, and the pressure in process container 1 is maintained defined value.
Apply RF power to pedestal 11 from high frequency electric source 75 via matching box 73 in this condition.Thus, as under
The pedestal 11 of portion's electrode and as producing high-frequency electric field between the shower nozzle 31 of upper electrode, processing gas dissociation and plasma
Change.Using the plasma, etching process is implemented to substrate S.
After etching process is implemented, stop the application of the RF power from high frequency electric source 75 and leading gas
After entering stopping, defined pressure will be decompressed in process container 1.Then, gate valve is opened, substrate S is handover to from pedestal 11
The fork of carrying device (not shown), substrate S is taken out of from the substrate conveyance of process container 1 with opening.Operation more than,
Substrate S plasma etch process is terminated.
During above-mentioned plasma etch process, in the plasma-etching apparatus 100 of present embodiment, control
Portion 80 processed monitors the aperture of APC valves 55, detects the signal that the rising of aperture rises as pressure.According to the testing result, enter
Row is to mass flow controller（MFC）43 feedback control, thus, suppress the quantity delivered of processing gas, make in process container 1
Pressure, which rises, to be relaxed.
Hereinafter, 5~Fig. 9 of reference picture, the compress control method of present embodiment is specifically illustrated.Fig. 5 is to represent
The flow chart of the example of the step of compress control method of the present embodiment performed by control unit 80.Fig. 5 represents to carry out 1
It is secondary to suppress mass flow controller by monitoring the aperture of APC valves 55（MFC）The step of processing of 43 flow.
First, in step sl, EC81 obtains the aperture of APC valves 55.As described above, the aperture of APC valves 55 obtains, can be with
It is that EC81 aperture monitoring unit 122 is carried out by MC83, the aperture monitoring unit for being attached to APC valves 55 can also be utilized（Do not scheme
Show）, sent by MC83 to EC81.
Then, in step s 2, by the aperture of the APC valves 55 obtained in the EC81 judgment step S1 of aperture determination unit 123
Whether first threshold is exceeded.Aperture determination unit 123 is using the aperture of acquirement with entering as the first threshold of parameter set in advance
Row compares.
When being determined as that aperture exceedes first threshold in step s 2（It is）In the case of, then, in step s3 according to next
From the result of determination of aperture determination unit 123, cumulative 1 counting of count value will be exceeded more than counter 124.
Then, in step s 4, flow control unit 121a carries out exceeding the tired of count value by what is counted more than counter 124
Whether evaluation has exceeded the judgement of Second Threshold.It is being judged to exceeding Second Threshold more than count value（It is）In the case of, in step
In rapid S5, flow control unit 121a is by MC83 to mass flow controller（MFC）43 send control signal so that make processing gas
The flow of body reduces ormal weight.In the present embodiment, counter 124 is used more than to count the number more than first threshold
The reasons why number, is as described below.During plasma etch process, the pressure in process container 1 is with certain adjusting amplitude of vibration.
Therefore, it is not necessarily big pressure change in the case where exceeding only first threshold once, appropriate pressure control can not be carried out by existing
The situation of system.Therefore, in the present embodiment, the number more than first threshold is counted using more than counter 124, and
Compared with Second Threshold, thus, in plasma-etching apparatus 100, the high Stress control of reliability is realized.
On the other hand, when being determined as that aperture is not above first threshold in step s 2（It is no）In the case of, again return to
To step S1, the step of step S1 and step S2 is repeated.The step of step S1 and step S2 is repeated, until in step
It is determined as that aperture exceedes first threshold in S2（It is）Or plasma etch process terminates.
In addition, it ought be judged to being not above Second Threshold more than count value in step s 4（It is no）In the case of, return again
Step S1 is returned to, the step of being repeated from step S1 to step S4.The step of this is from step S1 to step S4 is repeated, directly
Exceed Second Threshold to the increment rate for being determined as aperture in step s 4（It is）Or plasma etch process terminates.
The step of according to above-mentioned steps S1~step S5, the pressure change in process container 1 can be suppressed.In addition, as above
It is described, in terms of the high Stress control of reliability is carried out, counter 124 is used more than to the number progress more than first threshold
Counting be it is favourable, still, for example, also can be by making first threshold than plasma etching when process container 1 in it is logical
Normal pressure variance is big, using whether the judgement more than first threshold adjusts the flow of processing gas.
＜ acts on ＞
In plasma-etching apparatus 100, in the case of without special control, exist in etching progress, base
After etch target film on plate S just disappears, situation that the pressure in process container 1 sharp rises.First, the He of reference picture 6
Fig. 7 illustrates to the phenomenon.When Fig. 6 represents to be etched etch target film using plasma-etching apparatus 100
The performance plot of the time change of the aperture of pressure and APC valves 55 in process container 1.Fig. 7 be represent Fig. 6 and identical etc. from
During daughter etching process, the performance plot of the luminous time change of the plasma of generation in process container 1.In addition,
As etch target film, using lamination has the film of titanium layer, aluminium lamination, titanium layer successively on substrate S, as etching gas, chlorine is used
Gas.In the figure 7, wavelength 335nm Ti luminous intensity and wavelength 396nm Al luminous intensity are represented.
Reference picture 6 understands that plasma etching starts to terminate before and after 125 seconds before and after 10 seconds of transverse axis.In plasma
During body etches, the pressure in process container 1 substantially definitely elapses, still, 100~110 seconds before soon terminating
During switch to rise, persistently rise to etching and terminate.On the other hand, the aperture of APC valves 55 is before etching soon terminates
Sharp increase during 100~110 seconds, turned into certain after 110 seconds（The state of aperture standard-sized sheet）.
On the other hand, reference picture 7, the etching of the Ti films on upper strata are carried out to 25 seconds of transverse axis, hereby are observed that Ti's
It is luminous.Then, the etching with the Al films of centre is accompanied, and the luminous of Al turns into overriding, the Al luminous disappearance before and after 100 seconds
It is front and rear, the luminous of the Ti as caused by the etching of the Ti films of lower floor turns into peak.In addition, as Fig. 7 the composition of each film it is luminous
It is overlapping be because：On the substrate S of large area surface, etching is not equably to carry out, but for example from substrate S outer circumference
The heart is etched, and thus, in substrate S face, the etching of 2 films of upper and lower lamination is carried out simultaneously.According to Fig. 7 it is believed that：From
It is the undermost Ti films quilt of the etch target film of 3-tier architecture during Ti luminous 100 seconds to 110 seconds turned into after peak
Etch and disappear, the basilar memebrane being thus formed on substrate S gradually starts the stage exposed.In the phase from 100 seconds to 110 seconds
Between, as shown in fig. 6, the aperture of APC valves 55 sharp rises, when aperture turns into standard-sized sheet, pressure control can not be carried out after it
Make, the pressure in process container 1 switchs to rise.
It was found from Fig. 6 and Fig. 7, the reason for pressure in process container 1 rises is, during existing for etch target film with
The processing gas that the reaction of the object film is consumed, it is not consumed when etching is carried out, etch target film disappears.When occur so
Pressure change drastically when, as shown in fig. 6, the aperture of APC valves 55, which turns into, standard-sized sheet and keeps constant, it is impossible to utilize APC valves 55
Carry out the Stress control in process container 1.In addition, from Fig. 6 and Fig. 7, the rising of the aperture of APC valves 55 is in process container 1
Interior pressure occurs before rising.
Therefore, the compress control method in present embodiment and the plasma-etching method using the compress control method
In, the step of the step S1~step S5 illustrated according to Fig. 5, monitor pressure in process container 1 rise before aperture start
The aperture of the APC valves 55 of rising, according to as a result, making the changes in flow rate of processing gas importeding into process container 1.Here,
Fig. 8 be schematically show implement present embodiment compress control method in the case of APC valves aperture and processing gas
The explanation figure of the time change of flow.C1, C2, C3 ... in Fig. 8 represent more than counter 124 and the aperture of APC valves 55 are exceeded
First threshold Th number is counted and carries out cumulative section.In addition, t1, t2, t3 of Fig. 8 transverse axis are represented more than meter
In the case that the count value of number device 124 exceedes Second Threshold, EC81 is by MC83 to mass flow controller（MFC）43 send out control
Signal processed, at the time of making the flow of processing gas reduce ormal weight.
According to Fig. 5 illustrate step S1~step S5 the step of, first, monitor that the pressure in process container 1 rises it
The apertures of the APC valves 55 of preceding generation rises, according to as a result, in the C1 of section, the aperture more than counter 124 to APC valves 55
Number more than first threshold Th is counted and added up.Exceed Second Threshold in the count value more than counter 124
Moment t1, mass flow controller（MFC）43 make the flow of processing gas from V0Reduce to V1。
Then, again, according to Fig. 5 step S1~step S5 the step of, the aperture of monitoring APC valves 55 rises, according to it
As a result, number of the aperture of APC valves 55 more than first threshold Th is added up in section C2.In the meter more than counter 124
T2 at the time of numerical value exceedes Second Threshold, mass flow controller（MFC）43 make the flow of processing gas from V1Reduce to V2.With
Afterwards, in the case where pressure continues rising, same processing is repeated, until plasma etch process terminates.
As previously discussed, the compress control method in present embodiment and the plasma using the compress control method lose
In carving method, rise using to the suppression of processing gas flow to offset the pressure in process container 1, thus, it is possible to relax processing
Pressure in container 1 rises.
Fig. 9 is represented in plasma-etching apparatus 100, and the compress control method of present embodiment is applied into reality
The experimental result of plasma etch process.In this experiment, as etch target film, using Ti/Al/Ti stack membrane, make
For processing gas（Etching gas）, use Cl2（Chlorine）.The step of according to above-mentioned steps S1~step S5, monitoring APC valves 55 are opened
Degree rises, and the rising with aperture correspondingly reduces the flow for the processing gas importeding into process container 1.Specifically, lead to
The step of step S1~step S5 is repeated is crossed, as shown in figure 9, making the flow of processing gas from 3500ml/min（sccm）Point
Drop to 1700ml/min to stage（sccm）.As a result, the pressure in process container 1 is in substantially 10mTorr（1.3Pa）Left and right
Stably elapse.Therefore, the validity of the compress control method of present embodiment can be confirmed by Fig. 9.
As previously discussed, according to present embodiment, adjusted in the main pressure using in the progress process container 1 of APC valves 55
Plasma-etching apparatus 100 in, the aperture of monitoring APC valves 55, according to as a result, place to being imported into process container 1
The flow of process gases is adjusted.For example, in the case where aperture rises, reduce gas flow, using to processing gas stream
The suppression of amount rises to offset the pressure in process container 1, and the pressure that can be relaxed in process container 1 rises.In addition, APC valves
Pressure of the rising of 55 aperture in process container 1 occurs before rising, therefore, with being surveyed according to the pressure in process container 1
Amount result compares processing gas changes in flow rate, and response is excellent.Therefore, according to the present invention, for large-scale vacuum plant,
The setting number of exhaust apparatus 57 and APC valves 55 including vavuum pump can not be increased, and reliably carried out in process container 1
Stress control.In addition, the generation of free radical superfluous as caused by rising the pressure in process container 1 can be suppressed, therefore,
The generation lost shape of pattern form formed on substrate S surfaces can be prevented.
[second embodiment]
Then, plasma-etching apparatus, the Stress control of reference picture 10 and Figure 11 to second embodiment of the present invention
Method and plasma-etching method illustrate.In the present embodiment, the aperture of the APC valves 55 in the stipulated time is obtained
Increment rate, according to the increment rate judge whether that gas flow is adjusted.In the following description, with first embodiment
Difference centered on illustrate, for first embodiment identical structure, the repetitive description thereof will be omitted.
Figure 10 is the Setup Controller in the plasma-etching apparatus for represent present embodiment（EC）81A functional structure
Functional block diagram.In the following description, the hardware configuration as EC81A turns into the part of the structure shown in Fig. 3, also referring to figure
Symbol in 3.As shown in Figure 10, EC81A possesses processing control unit 121, aperture monitoring unit 122, aperture operational part 126 and input
Output control part 125.They use RAM112 to be used as working region and performed in ROM113 or storage device 105 by CPU111
The program of storage is realized.
Control unit 121, aperture monitoring unit 122 and input and output control unit 125 are handled with same with first embodiment
Function.
Aperture operational part 126 is with reference to aperture monitoring unit 122（Or the aperture monitoring unit of APC valves 55）The APC obtained in real time
The aperture of valve 55, in the range of the defined elapsed time, computing is carried out to the increment rate of the aperture of APC valves 55.That is, aperture is transported
Calculation portion 126 pre-saves the arbitrary time interval in storage device 105, reference according to the part as parameter or scheme
Aperture monitoring unit 122（Or the aperture monitoring unit of APC valves 55）Aperture, the aperture in the time interval is obtained according to its difference
Increment rate.
Whether flow control unit 121a carries out the increment rate of the aperture calculated by aperture operational part 126 more than defined
Threshold value（3rd threshold value）Judgement, and aperture increment rate more than the 3rd threshold value in the case of, by MC83 to quality stream
Amount controller（MFC）43 send control signal so that the flow of processing gas is reduced ormal weight.Thus, mass flow controls
Device（MFC）43 make the flow of processing gas reduce ormal weight.Here, for the 3rd threshold value, flow control unit 121a is with reference to work
The value in storage device 105 is pre-saved for a part for parameter or scheme.In addition, for the decrement of processing gas,
Flow control unit 121a pre-saves the value in storage device 105 also referring to the part as parameter or scheme.
The compress control method of present embodiment can include the step of step S11~step S14 shown in Figure 11.Figure 11
Represent to carry out suppressing mass flow controller by monitoring the aperture of APC valves 55 1 time（MFC）The step of the processing of 43 flow
Suddenly.
First, in step s 11, EC81A obtains the aperture of APC valves 55.The aperture of APC valves 55 obtains, and can be EC81A
Aperture monitoring unit 122 carried out by MC83, can also utilize and be attached to the aperture function for monitoring of APC valves 55, by MC83 to
EC81A is sent.
Then, in step s 12, using EC81A aperture operational part 126, the APC valves 55 obtained in step S11 are calculated
Aperture regulation the elapsed time in the range of increment rate.
Then, in step s 13, flow control unit 121a carries out the increase of the aperture calculated by aperture operational part 126
Whether rate is more than the judgement of the 3rd threshold value.It is being determined as the increment rate of aperture more than the 3rd threshold value（It is）In the case of, connecing
In the step S14 to get off, flow control unit 121a is by MC83 to mass flow controller（MFC）43 send control signal, make
The flow of processing gas must be made to reduce ormal weight.
On the other hand, when being judged to being not above the 3rd threshold value more than count value in step s 13（It is no）In the case of, then
It is secondary to return to step S11, the step of being repeated from step S11 to step S13.It is repeated from step S11 to step S13's
Step, until being determined as the increment rate of aperture more than the 3rd threshold value in step s 13（It is）Or plasma etch process knot
Beam.
The step of according to above-mentioned steps S11~step S14, the pressure oscillation in process container 1 can be suppressed.In this implementation
In mode, using the increment rate of the aperture in the defined time as index, but it is also possible to according to the aperture in the time of regulation
Difference carry out same control.
The other structures and effect of present embodiment are same with first embodiment.
More than, embodiments of the present invention are illustrated in detail for illustrative purposes, still, the present invention is not
Restricted by above-mentioned embodiment.Those skilled in the art can not depart from thought of the invention and scope and carry out many change
Become, these are also contained in the scope of the present invention.For example, in the above-described embodiment, list the plasma of parallel plate-type
Exemplified by body Etaching device, still, the present invention can also apply to such as inductance coupled plasma device, surface wave plasma
Device, ECR（Electron Cyclotron Resonance：Electron cyclotron resonace）Plasma device, spiral wave plasma
The plasma-etching apparatus of the other manners such as body device.As long as in addition, possess APC valves, the pressure in chamber is adjusted to
For necessary vacuum plant, however it is not limited to dry-etching device, can also be equally applicable to film formation device, cineration device etc..
In addition, the present invention is not limited to the situation using FPD by the use of substrate as handled object, such as can also apply to half
The situation of conductor chip, substrate used for solar batteries as handled object.
In addition, in the above-described embodiment, list the pressure in the aperture and process container 1 of APC valves 55 and rise, make place
In case of the flow of process gases is reduced, however, it is also possible to apply the present invention to the aperture and process container 1 of APC valves 55
Interior pressure declines, made the increased situation of flow of processing gas.
Claims (16)
1. a kind of vacuum plant, it is characterised in that possess：
House handled object and inside can be kept to the process container of vacuum；
Gas supply source via gas supplying path to supply processing gas in the process container；
It is arranged on the gas supplying path, the flow regulator that the supply flow rate of the processing gas is adjusted；
Detect the pressure-detecting device of the pressure in the process container；
The exhaust apparatus being connected via exhaust pathway with the process container；
It is arranged on the exhaust pathway, according to the pressure value detected by the pressure-detecting device, automatically regulates aperture
Automatic pressure control valve；
Monitor the aperture monitoring unit of the aperture of the automatic pressure control valve；With
According to the monitoring result of the aperture monitoring unit, the gas flow of supply is adjusted using the flow regulator
Flow control unit,
The flow control unit performs in the case where the aperture of the automatic pressure control valve rises and controls the stream repeatedly
The processing of quantity regulating device so that the supply flow rate of the processing gas reduces decrement set in advance.
2. vacuum plant as claimed in claim 1, it is characterised in that：
The flow control unit by by the aperture of the automatic pressure control valve compared with defined threshold value to control
State flow regulator so that the supply flow rate of the processing gas is reduced.
3. vacuum plant as claimed in claim 1, it is characterised in that：
It is also equipped with exceeding the aperture of the automatic pressure control valve count section that the number of first threshold is counted,
In the case where the value of the counting exceedes Second Threshold, the flow control unit controls the flow regulator, makes
The supply flow rate for obtaining the processing gas is reduced.
4. vacuum plant as claimed in claim 1, it is characterised in that：
It is also equipped with carrying out computing to the increment rate of the aperture of the automatic pressure control valve in the range of the defined elapsed time
Aperture operational part,
The aperture increment rate more than the 3rd threshold value in the case of, the flow control unit controls the Flow-rate adjustment dress
Put so that the supply flow rate of the processing gas is reduced.
5. the vacuum plant as any one of Claims 1-4, it is characterised in that：
The vacuum plant is the Etaching device being etched to handled object.
6. vacuum plant as claimed in claim 5, it is characterised in that：
Handled object is FPD substrates.
A kind of 7. compress control method of vacuum plant, it is characterised in that：
The vacuum plant possesses：
House handled object and be configured to remain inside the process container of vacuum state；
Gas supply source via gas supplying path to supply processing gas in the process container；
It is arranged on the gas supplying path, the flow regulator that the supply flow rate of the processing gas is adjusted；
Detect the pressure-detecting device of the pressure in the process container；
The exhaust apparatus being connected via exhaust pathway with the process container；With
It is arranged on the exhaust pathway, according to the pressure value detected by the pressure-detecting device, automatically regulates aperture
Automatic pressure control valve,
The compress control method is controlled to the pressure in the process container, wherein,
The aperture of the automatic pressure control valve is monitored, according to as a result, the aperture in the automatic pressure control valve rises
In the case of, the processing for controlling the flow regulator is performed repeatedly so that the supply flow rate of the processing gas reduces pre-
The decrement first set.
8. the compress control method of vacuum plant as claimed in claim 7, it is characterised in that：
By the way that the aperture of the automatic pressure control valve is controlled compared with defined threshold value so that the processing
The supply flow rate of gas is reduced.
9. the compress control method of vacuum plant as claimed in claim 7, it is characterised in that：
The aperture of the automatic pressure control valve is counted more than the number of first threshold, exceeded in the number counted to get
In the case of Second Threshold, it is controlled such that the supply flow rate of the processing gas is reduced.
10. the compress control method of vacuum plant as claimed in claim 7, it is characterised in that：
Feelings of the increment rate of the aperture of the automatic pressure control valve more than the 3rd threshold value in the range of the defined elapsed time
Under condition, it is controlled such that the supply flow rate of the processing gas is reduced.
11. the compress control method of the vacuum plant as any one of claim 7 to 10, it is characterised in that：
The vacuum plant is the Etaching device being etched to handled object.
12. the compress control method of vacuum plant as claimed in claim 11, it is characterised in that：
Handled object is FPD substrates.
13. a kind of engraving method, it is etched using Etaching device to handled object, and the feature of the engraving method exists
In：
The Etaching device possesses：
House handled object and be configured to remain inside the process container of vacuum state；
Gas supply source via gas supplying path to supply processing gas in the process container；
It is arranged on the gas supplying path, the flow regulator that the supply flow rate of the processing gas is adjusted；
Detect the pressure-detecting device of the pressure in the process container；
The exhaust apparatus being connected via exhaust pathway with the process container；With
It is arranged on the exhaust pathway, according to the pressure value detected by the pressure-detecting device, automatically regulates aperture
Automatic pressure control valve,
In the engraving method,
The aperture of the automatic pressure control valve is monitored, according to as a result, the aperture in the automatic pressure control valve rises
In the case of, the processing for controlling the flow regulator is performed repeatedly so that the supply flow rate of the processing gas reduces pre-
The decrement first set.
14. engraving method as claimed in claim 13, it is characterised in that：
By the way that compared with defined threshold value, the aperture of the automatic pressure control valve is made into the supply stream of the processing gas
Amount is reduced.
15. engraving method as claimed in claim 13, it is characterised in that：
The aperture of the automatic pressure control valve is counted more than the number of first threshold, exceeded in the number counted to get
In the case of Second Threshold, reduce the supply flow rate of the processing gas.
16. engraving method as claimed in claim 13, it is characterised in that：
Feelings of the increment rate of the aperture of the automatic pressure control valve more than the 3rd threshold value in the range of the defined elapsed time
Under condition, it is controlled such that the supply flow rate of the processing gas is reduced.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012245007A JP6080506B2 (en) | 2012-11-07 | 2012-11-07 | Vacuum device, pressure control method thereof, and etching method |
| JP2012-245007 | 2012-11-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103811300A CN103811300A (en) | 2014-05-21 |
| CN103811300B true CN103811300B (en) | 2018-01-23 |
Family
ID=50707918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310549740.6A Expired - Fee Related CN103811300B (en) | 2012-11-07 | 2013-11-07 | Vacuum plant, its compress control method and engraving method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6080506B2 (en) |
| KR (1) | KR101760975B1 (en) |
| CN (1) | CN103811300B (en) |
| TW (1) | TWI605513B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104503497B (en) * | 2014-11-21 | 2017-12-05 | 京东方科技集团股份有限公司 | Pressure protective system and pressure protection method for etching apparatus |
| JP6638576B2 (en) * | 2016-06-27 | 2020-01-29 | 東京エレクトロン株式会社 | Vacuum processing device, vacuum processing method, and storage medium |
| CN107706071B (en) * | 2017-08-25 | 2019-03-05 | 北方夜视技术股份有限公司 | For adjusting the method, apparatus and production method of photomultiplier tube vacuum degree |
| JP6841201B2 (en) | 2017-10-06 | 2021-03-10 | 株式会社島津製作所 | Gas estimation device and vacuum exhaust device |
| JP7061489B2 (en) * | 2018-03-20 | 2022-04-28 | 株式会社Ｓｃｒｅｅｎホールディングス | Vacuum drying equipment, substrate processing equipment and vacuum drying method |
| CN108593198A (en) * | 2018-04-23 | 2018-09-28 | 武汉华星光电技术有限公司 | Capacitance diaphragm gauge and dry etching apparatus chamber pressure test system |
| JP7014123B2 (en) | 2018-10-05 | 2022-02-01 | 株式会社島津製作所 | Estimator and valve controller |
| JP7433164B2 (en) | 2019-08-15 | 2024-02-19 | 東京エレクトロン株式会社 | Substrate processing system |
| CN114270490A (en) * | 2019-09-25 | 2022-04-01 | 株式会社国际电气 | Substrate processing apparatus, method for manufacturing semiconductor device, and program |
| JP7296854B2 (en) * | 2019-11-07 | 2023-06-23 | 東京エレクトロン株式会社 | Gas supply method and substrate processing apparatus |
| JP7479207B2 (en) * | 2020-06-09 | 2024-05-08 | 東京エレクトロン株式会社 | Etching method and substrate processing apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6660101B1 (en) * | 1999-09-09 | 2003-12-09 | Tokyo Electron Limited | Method and apparatus for cleaning film deposition device |
| CN1993496A (en) * | 2004-08-06 | 2007-07-04 | 东京毅力科创株式会社 | Thin film forming method and thin film forming apparatus |
| CN101339897A (en) * | 2007-06-29 | 2009-01-07 | 东京毅力科创株式会社 | Vacuum treatment device, vacuum treatment method and storage medium |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04147620A (en) * | 1990-10-09 | 1992-05-21 | Nec Yamagata Ltd | Manufacture of semiconductor device |
| JPH07211693A (en) * | 1994-01-13 | 1995-08-11 | Nec Kansai Ltd | Method for detecting end point of etching |
| JPH10270432A (en) * | 1997-03-24 | 1998-10-09 | Toshiba Corp | Dry etching apparatus |
| JP4972277B2 (en) * | 2004-11-10 | 2012-07-11 | 東京エレクトロン株式会社 | Substrate processing apparatus recovery method, apparatus recovery program, and substrate processing apparatus |
| JP4620537B2 (en) * | 2005-07-21 | 2011-01-26 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing apparatus control method |
| JP2008072030A (en) * | 2006-09-15 | 2008-03-27 | Matsushita Electric Ind Co Ltd | Plasma processing apparatus, method for detecting abnormality of plasma processing apparatus, and method for plasma processing |
| JP2009049383A (en) * | 2007-07-26 | 2009-03-05 | Panasonic Corp | Manufacturing apparatus of semiconductor device and manufacturing method for semiconductor device |
-
2012
- 2012-11-07 JP JP2012245007A patent/JP6080506B2/en not_active Expired - Fee Related
-
2013
- 2013-10-29 KR KR1020130129192A patent/KR101760975B1/en active IP Right Grant
- 2013-10-29 TW TW102139067A patent/TWI605513B/en not_active IP Right Cessation
- 2013-11-07 CN CN201310549740.6A patent/CN103811300B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6660101B1 (en) * | 1999-09-09 | 2003-12-09 | Tokyo Electron Limited | Method and apparatus for cleaning film deposition device |
| CN1993496A (en) * | 2004-08-06 | 2007-07-04 | 东京毅力科创株式会社 | Thin film forming method and thin film forming apparatus |
| CN101339897A (en) * | 2007-06-29 | 2009-01-07 | 东京毅力科创株式会社 | Vacuum treatment device, vacuum treatment method and storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6080506B2 (en) | 2017-02-15 |
| TW201438095A (en) | 2014-10-01 |
| KR20140059128A (en) | 2014-05-15 |
| KR101760975B1 (en) | 2017-07-24 |
| JP2014093497A (en) | 2014-05-19 |
| TWI605513B (en) | 2017-11-11 |
| CN103811300A (en) | 2014-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103811300B (en) | Vacuum plant, its compress control method and engraving method | |
| TWI811757B (en) | Apparatus for deposition and etch in gap fill | |
| TWI761337B (en) | Substrate processing system | |
| TWI494995B (en) | Buffer plate and substrate processing device | |
| CN101533764B (en) | Shower head and substrate processing apparatus | |
| TWI646569B (en) | Plasma processing device and operation method of plasma processing device | |
| US20150170932A1 (en) | Etching method | |
| KR20210112415A (en) | Methods and apparatus for etching semiconductor structures | |
| CN101800149A (en) | plasma processing apparatus | |
| KR20100126257A (en) | Method of depositing metallic film and memory medium | |
| CN104112636B (en) | Vacuum device and valve control method | |
| JP4256064B2 (en) | Control method of plasma processing apparatus | |
| US12057295B2 (en) | RF power compensation to reduce deposition or etch rate changes in response to substrate bulk resistivity variations | |
| JP2007096051A (en) | Cathode-coupling plasma cvd equipment and thin film manufacturing method by it | |
| JP6851510B2 (en) | Plasma processing equipment and plasma processing method | |
| TW202025213A (en) | Plasma deposition chamber and showerhead therefor | |
| CN104157541B (en) | Plasma processing apparatus | |
| JP4364011B2 (en) | Plasma generation method and plasma generation apparatus | |
| CN214271025U (en) | Physical vapor deposition equipment | |
| US11817313B2 (en) | Methods for pressure ramped plasma purge | |
| CN118679555A (en) | Method for determining consumption of edge ring, plasma processing apparatus and substrate processing system | |
| JP2023023737A (en) | Plasma processing apparatus and processing status detection method | |
| JP2021150418A5 (en) | ||
| JPH05275194A (en) | Method and device for generating plasma | |
| JPH0547711A (en) | Apparatus and method for manufacturing semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180123 Termination date: 20191107 |