TW202025213A - Plasma deposition chamber and showerhead therefor - Google Patents

Plasma deposition chamber and showerhead therefor Download PDF

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TW202025213A
TW202025213A TW108125959A TW108125959A TW202025213A TW 202025213 A TW202025213 A TW 202025213A TW 108125959 A TW108125959 A TW 108125959A TW 108125959 A TW108125959 A TW 108125959A TW 202025213 A TW202025213 A TW 202025213A
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perforated
gas
supporting
interface part
chamber
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TWI723473B (en
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泰景 元
李永東
簡添 高
尚傑 亞大夫
壽永 崔
蘇海 安華
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美商應用材料股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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Abstract

The present disclosure relates to methods and apparatus for showerhead for a deposition chamber. In one embodiment, a showerhead for a plasma deposition chamber is provided that includes a plurality of perforated tiles each coupled to one or more of a plurality of support members, and a plurality of inductive couplers within the showerhead, wherein one inductive coupler of the plurality of inductive couplers corresponds to one of the plurality of perforated tiles, wherein the support members provide precursor gases to a volume formed between the inductive couplers and the perforated tiles.

Description

高密度電漿增強化學氣相沉積腔室High density plasma enhanced chemical vapor deposition chamber

本揭露實施例一般有關於一種用於處理大面積基板的設備。更具體而言，本揭露實施例有關於一種用於裝置製造的化學氣相沉積系統。The embodiments of the present disclosure generally relate to a device for processing large-area substrates. More specifically, the disclosed embodiment relates to a chemical vapor deposition system for device manufacturing.

在太陽能面板或平板顯示器的製造上，採用許多製程在例如半導體基板、太陽能面板基板、和液晶顯示器 (LCD) 和/或有機發光二極體 (OLED)基板等基板上沉積薄膜，用以在其上形成電子裝置。一般藉由引入前驅氣體於具有溫度控制基板支撐件上的基板的真空腔室中來完成沉積。一般引導前驅氣體通過位於真空腔室頂部附近的氣體分配板。藉由從耦接到腔室的一或多個無線電頻率 (RF) 源向腔室中的導電噴頭施加無線電頻率 (RF) 功率，可將真空腔室中的前驅氣體激活 (例如激發) 成電漿。激發氣體係反應而形成材料層於基板的表面上，此基板係位於溫度受控的基板支撐件上。In the manufacture of solar panels or flat-panel displays, many processes are used to deposit thin films on substrates such as semiconductor substrates, solar panel substrates, and liquid crystal display (LCD) and/or organic light-emitting diode (OLED) substrates. Form an electronic device. The deposition is generally accomplished by introducing a precursor gas into a vacuum chamber with a substrate on a temperature-controlled substrate support. The precursor gas is generally guided through a gas distribution plate located near the top of the vacuum chamber. By applying radio frequency (RF) power from one or more radio frequency (RF) sources coupled to the chamber to the conductive showerhead in the chamber, the precursor gas in the vacuum chamber can be activated (eg excited) into electricity Pulp. The excitation gas system reacts to form a material layer on the surface of the substrate, and the substrate is located on the temperature-controlled substrate support.

現在，用於形成電子器件的基板的尺寸通常在表面積上超過1平方公尺。這些基板上的膜厚均勻性卻難以實現。傳統上，電漿形成於常規腔室中，用以電離氣體原子並形成沉積氣體的自由基，這對於使用電容耦合電極裝置來沉積膜層在這種尺寸的基板上係有用的。近來，人們正在探索過去曾用於在圓形基板或晶圓上進行沉積之電感耦合電漿裝置，來用於這些大型基板的沉積製程中。然而，如常規腔室中所使用之大基板，電感耦合利用介電材料作為結構支撐部件，且這些材料不具有承受結構負載，此負載係由於在大氣壓側對腔室的大面積結構部分的一側施加大氣壓力並在其另一側施加真空壓力條件而產生的。因此，電感耦合電漿系統已針對大面積基板電漿製成進行開發。然而，例如整個大基板上的沉積厚度均勻性之製程均勻性係不理想的。Now, the size of substrates used to form electronic devices generally exceeds 1 square meter in surface area. The film thickness uniformity on these substrates is difficult to achieve. Traditionally, plasma is formed in a conventional chamber to ionize gas atoms and form radicals of the deposition gas, which is useful for depositing films on substrates of this size using capacitively coupled electrode devices. Recently, people are exploring the use of inductively coupled plasma devices used for deposition on circular substrates or wafers in the deposition process of these large substrates. However, like the large substrates used in conventional chambers, inductive coupling uses dielectric materials as structural support components, and these materials do not have to bear the structural load, which is due to the impact on the large-area structural part of the chamber on the atmospheric pressure side. It is generated by applying atmospheric pressure on one side and applying vacuum pressure on the other side. Therefore, inductively coupled plasma systems have been developed for large-area substrate plasma production. However, the process uniformity, such as the uniformity of the deposition thickness on the entire large substrate, is not ideal.

因此，需要用於大面積基板上的電感耦合電漿源，配置成提高基板的整個沉積表面上的膜厚度均勻性。Therefore, there is a need for an inductively coupled plasma source for a large-area substrate, configured to improve the uniformity of the film thickness on the entire deposition surface of the substrate.

本揭露的實施例包括用於噴頭的方法和設備，以及具有噴頭的電漿沉積腔室，此電漿沉積腔室能夠在大面積基板上形成一或多層薄膜。The disclosed embodiments include methods and equipment for shower heads, and a plasma deposition chamber with shower heads, which can form one or more layers of thin films on a large-area substrate.

在一個實施例中，提供一種用於電漿沉積腔室的噴頭，其包括：多個穿孔磚，每個穿孔磚耦接於多個支撐構件中的一者或多者；以及位於噴頭內的多個電感耦合器，其中此些電感耦合器中的一電感耦合器對應於此些穿孔磚中的一者，其中此些支撐構件提供前驅氣體提供到此些電感耦合器和此些穿孔磚之間所形成的一容積中。In one embodiment, there is provided a shower head for a plasma deposition chamber, which includes: a plurality of perforated bricks, each perforated brick is coupled to one or more of the plurality of supporting members; and a shower head located in the shower head A plurality of inductive couplers, wherein an inductive coupler of the inductive couplers corresponds to one of the perforated bricks, wherein the supporting members provide precursor gas to the inductive couplers and the perforated bricks In a volume formed by the time.

在另一實施例中，提供一種電漿沉積腔室，其包括：一噴頭，具有多個穿孔磚；一電感耦合器，對應於此些穿孔磚中的一者或多者；以及多個支撐構件，用以支撐此些穿孔磚的每一者，其中此些支撐構件的一者或多者提供前驅氣體到此些電感耦合器和此些穿孔磚之間所形成的一容積中。In another embodiment, a plasma deposition chamber is provided, which includes: a nozzle having a plurality of perforated bricks; an inductive coupler corresponding to one or more of the perforated bricks; and a plurality of supports A member is used to support each of the perforated bricks, wherein one or more of the support members provide precursor gas to a volume formed between the inductive couplers and the perforated bricks.

在另一實施例中，提供一種電漿沉積腔室，包括：一噴頭，具有多個穿孔磚，每個穿孔磚耦接於多個支撐構件中的一者或多者；多個介電板，此些介電板中的一者對應於此些穿孔磚中的一者；以及多個電感耦合器，其中此些電感耦合器中的一電感耦合器對應於此些介電板中的一者，其中此些支撐構件提供前驅氣體到此些電感耦合器和此些穿孔磚之間所形成的一容積中。In another embodiment, a plasma deposition chamber is provided, including: a spray head having a plurality of perforated bricks, each perforated brick is coupled to one or more of the plurality of supporting members; and a plurality of dielectric plates , One of the dielectric plates corresponds to one of the perforated bricks; and a plurality of inductive couplers, wherein one of the inductive couplers corresponds to one of the dielectric plates In addition, the supporting members provide precursor gas to a volume formed between the inductive couplers and the perforated bricks.

本揭露實施例包括一種處理系統，其可操作於沉積多個層在大面積基板上。如本文使用的大面積基板為大面積的基板，例如具有典型約1平方公尺以上的表面積的基板。然而，基板不限於任何特定尺寸或形狀。在一方面，詞語「基板」代表任何多邊形、正方形、矩形、弧形或其他非圓形工件，例如用於製造平板顯示器的玻璃或聚合物基板。The disclosed embodiments include a processing system that is operable to deposit multiple layers on a large area substrate. The large-area substrate as used herein is a large-area substrate, for example, a substrate having a surface area of typically about 1 square meter or more. However, the substrate is not limited to any specific size or shape. In one aspect, the term "substrate" refers to any polygonal, square, rectangular, arc-shaped or other non-circular workpiece, such as a glass or polymer substrate used to manufacture flat panel displays.

在此，噴頭配置成使氣體從中流過並流入多個獨立控制區域中的腔室的處理空間中，用以提高處理區域中暴露於氣體的基板表面的處理均勻性。此外，每個區域配置有增壓室、一或多個穿孔板、及單一個線圈或單一個線圈的一部分，此一或多個穿孔板係在增壓室和腔室的處理容積之間，此單一個線圈或單一個線圈的一部分係專用於某個區域或單個穿孔板。增壓室形成在介電窗、穿孔板和周圍結構之間。每個增壓室配置成允許處理氣體流入其中並被分配以產生氣體之相對均勻的流速或在某些情況下定制的流速來穿過穿孔板和進入處理容積。增壓室的厚度較佳小於電漿的暗空間的厚度的兩倍，此電漿係在增壓室內的由處理氣體而形成的。較佳為線圈形狀的電感耦合器係位於電介質窗口的後面，並藉由電介質窗口、增壓室和穿孔板電感耦合能量，用以撞擊和支撐處理容積中的電漿。此外，提供額外處理氣流在相鄰的穿孔板之間的區域中。控制每個區域中以及穿過穿孔板之間區域的處理氣體的流量，以產生均勻或定制的氣流，從而在基板上獲得所期望的製程結果。Here, the shower head is configured to allow the gas to flow therethrough and into the processing space of the chambers in the multiple independent control regions to improve the processing uniformity of the substrate surface exposed to the gas in the processing region. In addition, each area is configured with a pressurizing chamber, one or more perforated plates, and a single coil or part of a single coil, and the one or more perforated plates are connected between the pressurizing chamber and the processing volume of the chamber, This single coil or part of a single coil is dedicated to a certain area or a single perforated plate. The plenum is formed between the dielectric window, the perforated plate and the surrounding structure. Each plenum is configured to allow processing gas to flow into it and be distributed to produce a relatively uniform flow rate of gas or in some cases a customized flow rate to pass through the perforated plate and into the processing volume. The thickness of the booster chamber is preferably less than twice the thickness of the dark space of the plasma, which is formed by processing gas in the booster chamber. The inductive coupler, preferably in the shape of a coil, is located behind the dielectric window and inductively couples energy through the dielectric window, the pressurizing chamber, and the perforated plate to impact and support the plasma in the processing volume. In addition, an additional process air flow is provided in the area between adjacent perforated plates. The flow of processing gas in each area and through the area between the perforated plates is controlled to generate a uniform or customized gas flow to obtain the desired process result on the substrate.

本揭露的實施例包括高密度等離子體化學氣相沉積 (HDP CVD) 處理腔室，其可在基板上形成一或多個層或膜。如本文所揭露的處理腔室適於輸送在電漿中產生的前驅氣體的通電種類。可藉由在真空下將能量電感耦合到氣體中來產生電漿。本文揭露的實施例可適於在可從可從加利福尼亞州聖塔克拉拉的應用材料公司的子公司-美商業凱科技股份有限公司獲得的腔室中使用。應當理解的是，也可在可從其他製造商獲得的腔室中實踐本文討論的實施例。The disclosed embodiments include a high-density plasma chemical vapor deposition (HDP CVD) processing chamber, which can form one or more layers or films on a substrate. The processing chamber as disclosed herein is suitable for conveying the energized type of the precursor gas generated in the plasma. Plasma can be generated by inductively coupling energy into gas under vacuum. The embodiments disclosed herein may be adapted for use in a chamber available from American Commercial Kay Technology Co., Ltd., a subsidiary of Applied Materials Corporation of Santa Clara, California. It should be understood that the embodiments discussed herein may also be practiced in chambers available from other manufacturers.

第1圖為根據本揭露的一實施例之一示意性處理腔室100的橫截測視圖。示例性基板102係示出於腔室主體104內。處理腔室100還包括蓋組件106和基座或基板支撐組件108。蓋組件106設置在腔室主體104的上端，且基板支撐組件108至少部分地設置在腔室主體104內。基板支撐組件108耦接於軸體110。軸體110耦接於驅動器112，驅動器112垂直地 (沿Z方向) 移動基板支撐組件108。第1圖所示之處理腔室100的基板支撐組件108係處於處理位置。然而，可沿Z方向降低基板支撐組件108到相鄰於傳送通口114的位置。當降低時，可移動地設置在基板支撐組件108中的升舉銷116接觸腔室主體104的底部118。當升舉銷116接觸底部118時，升舉銷116不能再與基板支撐組件108一起向下移動，並當基板支撐組件108的基板接收表面120從其向下移動時升舉銷116保持基板102於固定位置。之後，末端執行器或機械手刀片 (未示出) 插入穿過傳送通口114，並在基板102和基板接收表面120之間，用以傳送基板102到腔室主體104之外。FIG. 1 is a cross-sectional view of a schematic processing chamber 100 according to an embodiment of the present disclosure. An exemplary substrate 102 is shown in the chamber body 104. The processing chamber 100 also includes a cover assembly 106 and a base or substrate support assembly 108. The cover assembly 106 is disposed at the upper end of the chamber body 104, and the substrate support assembly 108 is at least partially disposed in the chamber body 104. The substrate support assembly 108 is coupled to the shaft 110. The shaft 110 is coupled to the driver 112, and the driver 112 moves the substrate support assembly 108 vertically (along the Z direction). The substrate support assembly 108 of the processing chamber 100 shown in FIG. 1 is in the processing position. However, the substrate support assembly 108 can be lowered in the Z direction to a position adjacent to the transfer port 114. When lowered, the lifting pin 116 movably provided in the substrate support assembly 108 contacts the bottom 118 of the chamber body 104. When the lift pin 116 contacts the bottom 118, the lift pin 116 can no longer move down together with the substrate support assembly 108, and the lift pin 116 holds the substrate 102 when the substrate receiving surface 120 of the substrate support assembly 108 moves downward therefrom. In a fixed position. After that, an end effector or a robot blade (not shown) is inserted through the transfer port 114 and between the substrate 102 and the substrate receiving surface 120 to transfer the substrate 102 to the outside of the chamber body 104.

蓋組件106可包括靠在腔室主體104上的背板122。蓋組件106還包括氣體分配組件或噴頭124。噴頭124傳送處理氣體從氣體源到噴頭124和基板102之間的處理區域126。噴頭124還耦接於清潔氣體源，清潔氣體源提供例如含氟氣體的清潔氣體到處理區域126。The cover assembly 106 may include a back plate 122 that rests on the chamber body 104. The cover assembly 106 also includes a gas distribution assembly or shower head 124. The shower head 124 conveys the processing gas from the gas source to the processing area 126 between the shower head 124 and the substrate 102. The shower head 124 is also coupled to a cleaning gas source, and the cleaning gas source provides cleaning gas such as fluorine-containing gas to the processing area 126.

噴頭124還用作等電漿源128。為了用作電漿源128，噴頭124包括一或多個電感式耦合電漿產生組件或線圈130。一或多個線圈130中的每一者可如下文簡述之線圈130為單一個線圈130、兩個線圈130、或超過兩個線圈130。一或多個線圈130中的每一者跨接電源和地面133。噴頭124還包括面板132，面板132包括多個離散穿孔磚134。電源包括匹配電路或用於調節線圈130的電特性的調諧能力。The shower head 124 is also used as an isoplasma source 128. To be used as a plasma source 128, the shower head 124 includes one or more inductively coupled plasma generating components or coils 130. Each of the one or more coils 130 may be a single coil 130, two coils 130, or more than two coils 130, as briefly described below. Each of the one or more coils 130 is connected across the power source and ground 133. The shower head 124 also includes a panel 132 including a plurality of discrete perforated bricks 134. The power supply includes a matching circuit or tuning capability for adjusting the electrical characteristics of the coil 130.

每個穿孔磚134由多個支撐構件136支撐。一或多個線圈130中的每一者或一或多個線圈130中的一部分位於各自的介電板138上或上方。在第2A圖中更清楚地示出在蓋組件106內的介電板138上方的線圈130的範例。多個氣體容積140藉由介電板138、穿孔磚134和支撐構件136的表面來定義。一或多個線圈130中的每一者配置成產生電磁場，當氣體藉由相鄰的穿孔磚流入氣體容積140並進入下面的腔室容積時，此電磁場在氣體容積140下方的處理區域126中激勵處理氣體成電漿。藉由支撐構件136中的導管提供來自氣體源的處理氣體到每個氣體容積140。進入和離開噴頭的氣體的容積或流速在噴頭124的不同區域中進行控制。處理氣體的區域控制係藉由多個流量控制器提供，例如第1圖所繪示的大流量控制器142、143和144。舉例而言，流向噴頭124的外圍或外部區域之氣體的流量由流量控制器142、143所控制，而流向噴頭124的中央區域之氣體的流量由流量控制器144所控制。當需要腔室清潔時，來自清潔氣體源的清潔氣體流到每個氣體容積140並之後流入處理容積中，清潔氣體在處理容積中被激發成離子、自由基或兩者兼具。為了清潔腔室組件，激發的清潔氣體流經穿孔磚134並進入處理區域126。Each perforated brick 134 is supported by a plurality of supporting members 136. Each of the one or more coils 130 or a portion of the one or more coils 130 is located on or above the respective dielectric plate 138. An example of the coil 130 above the dielectric plate 138 in the cover assembly 106 is more clearly shown in FIG. 2A. The multiple gas volumes 140 are defined by the surface of the dielectric plate 138, the perforated brick 134, and the support member 136. Each of the one or more coils 130 is configured to generate an electromagnetic field. When gas flows into the gas volume 140 through adjacent perforated bricks and enters the chamber volume below, the electromagnetic field is in the processing area 126 below the gas volume 140 Stimulate the process gas into plasma. The process gas from the gas source is provided to each gas volume 140 by the conduit in the support member 136. The volume or flow rate of the gas entering and leaving the shower head is controlled in different areas of the shower head 124. The area control of the processing gas is provided by a plurality of flow controllers, such as the large flow controllers 142, 143, and 144 shown in Figure 1. For example, the flow of gas flowing to the periphery or outer area of the shower head 124 is controlled by the flow controllers 142 and 143, and the flow of gas flowing to the central area of the shower head 124 is controlled by the flow controller 144. When chamber cleaning is required, the cleaning gas from the cleaning gas source flows to each gas volume 140 and then into the processing volume, where the cleaning gas is excited into ions, radicals, or both. In order to clean the chamber components, the excited cleaning gas flows through the perforated brick 134 and enters the processing area 126.

第2A圖為第1圖的蓋組件106的一部分的放大圖。如上所述，藉由穿過背板122所形成的第一導管200，前驅氣體從氣體源流向氣體容積140。每個第一導管200耦接於形成在支撐構件136中的第二導管205。第二導管205在開口210處提供前驅氣體到氣體容積140。一些第二導管205提供氣體到兩個相鄰的氣體容積140 (第2A圖中以虛線示出其中一個第二導管205)。第4圖更清楚地示出流入代表性氣體容積140中的氣體。第二導管205可包括限流器215，用以控制流向氣體容積140的流量。為了控制通過的氣體流量，可改變限流器215的尺寸。舉例而言，每個限流器215包括特定尺寸 (例如直徑) 的孔口，用以控制流量。此外，可改變每個限流器215，如根據需要來提供較大的孔口尺寸或根據需要來提供較小的孔口尺寸，用以控制通過其中的流量。Fig. 2A is an enlarged view of a part of the cover assembly 106 of Fig. 1. As described above, by passing through the first duct 200 formed by the back plate 122, the precursor gas flows from the gas source to the gas volume 140. Each first duct 200 is coupled to a second duct 205 formed in the supporting member 136. The second conduit 205 provides precursor gas to the gas volume 140 at the opening 210. Some second ducts 205 provide gas to two adjacent gas volumes 140 (one of the second ducts 205 is shown in dashed lines in Figure 2A). Figure 4 shows the gas flowing into the representative gas volume 140 more clearly. The second conduit 205 may include a flow restrictor 215 to control the flow to the gas volume 140. In order to control the flow of gas passing through, the size of the restrictor 215 can be changed. For example, each restrictor 215 includes an orifice of a specific size (eg, diameter) to control the flow rate. In addition, each flow restrictor 215 can be changed, such as providing a larger orifice size as required or a smaller orifice size as required to control the flow rate therethrough.

如第2A圖所示，穿孔磚134包括穿過其中延伸的多個開口220。由於開口220的直徑在氣體容積140和處理區域126之間延伸，因此多個開口220中的每一者允許氣體以期望的流量從氣體容積140流入處理區域126。為了使流過一或多個穿孔磚134中的每個開口220的氣流均衡，開口220和/或開口220的行和列可為不同尺寸的和/或不同間隔的。此外，取決於期望的氣體流動特性，來自每個開口220的氣體流動可為不均勻的。As shown in Figure 2A, the perforated brick 134 includes a plurality of openings 220 extending therethrough. Since the diameter of the opening 220 extends between the gas volume 140 and the processing area 126, each of the plurality of openings 220 allows gas to flow from the gas volume 140 into the processing area 126 at a desired flow rate. In order to equalize the air flow through each of the openings 220 in the one or more perforated bricks 134, the openings 220 and/or the rows and columns of the openings 220 may be of different sizes and/or differently spaced. Furthermore, depending on the desired gas flow characteristics, the gas flow from each opening 220 may be uneven.

除穿孔磚134之外，面板132包括多個穿孔條225，穿孔條225係沿著穿孔磚134的側面延伸。多個穿孔條225中的每一者包括多個開口230，開口230允許氣體從第二導管205流入第二增壓室235並之後進入處理區域126，用以激發氣體成電漿。In addition to the perforated brick 134, the panel 132 includes a plurality of perforated strips 225 extending along the side of the perforated brick 134. Each of the plurality of perforated strips 225 includes a plurality of openings 230 that allow gas to flow from the second duct 205 into the second plenum 235 and then into the processing area 126 to excite the gas into plasma.

支撐構件136藉由例如螺栓或螺釘的固定件240耦接於背板122。每個支撐構件136透過接口部分245支撐穿孔磚134。每個接口部分245可為壁架或擱板，用以支撐周圍的部分或穿孔磚134的邊緣。在一些實施例中，接口部分245包括可移除條帶250。可移除條帶250藉由例如螺栓或螺釘的固定件 (未示出) 固定至支撐構件136。接口部分245的一部分是L形的，而接口部分245的另一部分是T形的。每個接口部分245還支撐穿孔條225的周圍或邊緣。利用一或多個密封件265來密封氣體容積140。舉例而言，密封件265為彈性體材料，例如O形環密封件或聚四氟乙烯 (PTFE) 接頭密封材料。一或多個密封件265可設置在支撐構件136與穿孔磚134和穿孔條225之間。可移除條帶250用於將穿孔條225和穿孔磚134中的一個或兩個支撐在支撐件上。可移除條帶250可根據需要被移除，用以替換穿孔條225和穿孔磚134中的一個或兩個。The supporting member 136 is coupled to the back plate 122 by a fixing member 240 such as a bolt or a screw. Each supporting member 136 supports the perforated brick 134 through the interface part 245. Each interface part 245 can be a wall shelf or shelf to support the surrounding part or the edge of the perforated brick 134. In some embodiments, the interface portion 245 includes a removable strap 250. The removable strap 250 is fixed to the support member 136 by a fixing member (not shown) such as bolts or screws. A part of the interface part 245 is L-shaped, and another part of the interface part 245 is T-shaped. Each interface portion 245 also supports the periphery or edge of the perforated strip 225. One or more seals 265 are used to seal the gas volume 140. For example, the seal 265 is an elastomer material, such as an O-ring seal or a polytetrafluoroethylene (PTFE) joint sealing material. One or more seals 265 may be provided between the support member 136 and the perforated brick 134 and the perforated strip 225. The removable strip 250 is used to support one or both of the perforated strip 225 and the perforated brick 134 on the support. The removable strip 250 can be removed as needed to replace one or both of the perforated strip 225 and the perforated brick 134.

此外，每個支撐構件136利用從其延伸的擱板270 (在第2A圖中示出) 來支撐介電板138。在噴頭124/電漿源128的實施例中，相較於整個噴頭124/電漿源128的表面積，介電板138在側向表面積 (XY平面) 更小。利用擱板270，用以撐介電板138。此些介電板138之減少的側向表面積允許使用介電材料，此介電材料係作為真空環境和氣體容積140的電漿和處理區域126和通常設置相鄰線圈130的大氣環境之間的物理屏障，且不會因為支撐大氣壓力負載的大面積而在其中施加大壓力。In addition, each support member 136 supports the dielectric plate 138 with a shelf 270 (shown in Figure 2A) extending therefrom. In the embodiment of the shower head 124/plasma source 128, the surface area of the dielectric plate 138 in the lateral direction (XY plane) is smaller than that of the entire shower head 124/plasma source 128. The shelf 270 is used to support the dielectric plate 138. The reduced lateral surface area of these dielectric plates 138 allows the use of dielectric materials, which are used as a gap between the vacuum environment and the plasma of the gas volume 140 and the processing area 126 and the atmospheric environment where adjacent coils 130 are normally located. It is a physical barrier, and will not exert high pressure in it because of the large area supporting the atmospheric pressure load.

密封件265用以從氣體容積140 (在處理期間處於毫託的次大氣壓力或更小範圍內) 密封容積275 (處於大氣壓力或接近大氣壓力)。接口構件280係示出從支撐構件136延伸，以及使用固定件285來固定 (即，推壓) 電介質板138在密封件265和擱板270上。The seal 265 is used to seal the volume 275 (at or near atmospheric pressure) from the gas volume 140 (at the sub-atmospheric pressure of millitorr or less during processing). The interface member 280 is shown to extend from the support member 136 and use the fixing member 285 to fix (ie, push) the dielectric plate 138 on the sealing member 265 and the shelf 270.

基於電特性、強度和化學穩定性中的一個或多個來選擇用於噴頭124/電漿源128的材料。線圈130由導電材料製成。背板122和支撐構件136由能夠支撐被支撐部件的重量和大氣壓力負載的材料製成，此材料可包括金屬或其他類似材料。背板122和支撐構件136可由例如鋁材料的非磁性材料 (例如非順磁性或非鐵磁性材料) 製成。可移除條帶250也由例如金屬材料的非磁性材料所形成，例如鋁、或陶瓷材料 (例如氧化鋁 (Al2 O3 ) 或藍寶石(Al2 O3 ))。穿孔條225和穿孔磚134由陶瓷材料製成，例如石英、氧化鋁或其他類似材料。介電板138由石英、氧化鋁或藍寶石材料製成。The material used for the showerhead 124/plasma source 128 is selected based on one or more of electrical properties, strength, and chemical stability. The coil 130 is made of a conductive material. The back plate 122 and the supporting member 136 are made of materials that can support the weight of the supported component and the atmospheric pressure load, and the material may include metal or other similar materials. The back plate 122 and the support member 136 may be made of a non-magnetic material such as an aluminum material (for example, a non-paramagnetic or non-ferromagnetic material). The removable strip 250 is also formed of a non-magnetic material such as a metal material, such as aluminum, or a ceramic material (such as aluminum oxide (Al 2 O 3 ) or sapphire (Al 2 O 3 )). The perforated strip 225 and the perforated brick 134 are made of ceramic materials, such as quartz, alumina or other similar materials. The dielectric plate 138 is made of quartz, alumina or sapphire material.

在一些實施例中，支撐構件136在其中包括一或多個冷卻劑通道255。一或多個冷卻劑通道255流體地耦接於流體源260，此流體源260配置成向冷卻劑通道255提供冷卻劑介質。In some embodiments, the support member 136 includes one or more coolant channels 255 therein. One or more coolant channels 255 are fluidly coupled to a fluid source 260 configured to provide coolant medium to the coolant channels 255.

第2B圖是蓋組件106中的介電板138上的線圈130之一實施例的俯視圖。在一個實施例中，可使用第2B圖中所示的線圈130配置，而使每個介電板138的上方分別形成示意性線圈配置，從而使得每個平面線圈在噴頭124上以所需圖案與相鄰設置的線圈130串聯連接。線圈130包括方螺旋形的導體圖案290。 電連接包括電輸入端子295A和電輸出端子295B。噴頭124的一或多個線圈130中的每一者係串聯和/或並聯。FIG. 2B is a top view of an embodiment of the coil 130 on the dielectric plate 138 in the cover assembly 106. In one embodiment, the coil 130 configuration shown in Figure 2B can be used, and a schematic coil configuration is formed above each dielectric plate 138, so that each planar coil has a desired pattern on the shower head 124 It is connected in series with the adjacent coil 130. The coil 130 includes a conductor pattern 290 in a square spiral shape. The electrical connection includes an electrical input terminal 295A and an electrical output terminal 295B. Each of the one or more coils 130 of the shower head 124 is connected in series and/or in parallel.

第3A圖是噴頭124的面板132之一實施例的仰視平面圖。如上所述，噴頭124配置成包括一或多個區域，每個區域在其中均具有獨立控制的氣體流量。 舉例而言，面板132包括中央區域300A、中間區域300B以及一或多個外部區域300C和300D。流到區域的氣體流量由流量控制器142、143和144 (如第1圖所示) 所控制。FIG. 3A is a bottom plan view of an embodiment of the panel 132 of the shower head 124. As described above, the shower head 124 is configured to include one or more regions, each of which has an independently controlled gas flow rate. For example, the panel 132 includes a central area 300A, a middle area 300B, and one or more outer areas 300C and 300D. The gas flow to the zone is controlled by flow controllers 142, 143 and 144 (as shown in Figure 1).

第3B圖是噴頭124的面板132之另一實施例的局部底部平面圖。在此實施例中，穿孔磚134由穿孔條225所支撐。利用固定件305固定穿孔條225和可移除條帶250至支撐構件136，由於支撐構件136位於穿孔條225和可移除條帶250的後面，因此支撐構件136未在此視圖中被示出。FIG. 3B is a partial bottom plan view of another embodiment of the panel 132 of the shower head 124. In this embodiment, the perforated brick 134 is supported by the perforated strip 225. Fix the perforated strip 225 and the removable strip 250 to the support member 136 with the fixing member 305. Since the support member 136 is located behind the perforated strip 225 and the removable strip 250, the support member 136 is not shown in this view .

第4圖是示出噴頭124之另一實施例的示意性底部平面圖，示出形成在噴頭124內之進入氣體容積140中的氣流注入模式。噴頭124的側面示出基板的長度400和寬度405。可如箭頭410所示之單向地提供進入氣體容積140的前驅流，或如箭頭415所示之雙向地提供進入氣體容積140的前驅流。可由流量控制器142、143和144提供前驅流控制 (如第1圖所示)。此外，流量控制器142、143和144可提供例如邊緣區域420、角落區域425和中心區域430等的氣流區域 (如第1圖所示)。可藉由改變開口220、開口230和限流器215 (均在第2A圖中示出) 中的一者或組合之尺寸來調節前驅物到每個氣體容積140和/或區域的流速。FIG. 4 is a schematic bottom plan view showing another embodiment of the shower head 124, showing the gas flow injection pattern formed in the shower head 124 into the gas volume 140. As shown in FIG. The side of the shower head 124 shows the length 400 and the width 405 of the substrate. The precursor flow into the gas volume 140 may be provided unidirectionally as shown by arrow 410, or the precursor flow into the gas volume 140 may be provided bidirectionally as shown by arrow 415. The precursor flow control can be provided by flow controllers 142, 143, and 144 (as shown in Figure 1). In addition, the flow controllers 142, 143, and 144 can provide air flow areas such as the edge area 420, the corner area 425, and the center area 430 (as shown in Figure 1). The flow rate of the precursor to each gas volume 140 and/or area can be adjusted by changing the size of one or a combination of the opening 220, the opening 230 and the restrictor 215 (all shown in Figure 2A).

進入每個氣體容積140的流速可相同或不同。 可藉由第1圖所示之質量流量控制器142、143和144來控制進入氣體容積140的流速。如上所述，可藉由限流器215的尺寸來額外控制進入氣體容積140的流速。可藉由穿孔磚134中開口220的尺寸和穿孔條225中開口230的尺寸來控制進入處理區域126的流量。可根據需要，使用進入氣體容積140的雙向流或單向流來提供足夠的氣體流量到處理區域126。The flow rate into each gas volume 140 may be the same or different. The flow rate of the inlet gas volume 140 can be controlled by the mass flow controllers 142, 143, and 144 shown in Figure 1. As mentioned above, the flow rate into the gas volume 140 can be additionally controlled by the size of the restrictor 215. The flow rate into the treatment area 126 can be controlled by the size of the opening 220 in the perforated brick 134 and the size of the opening 230 in the perforated strip 225. The bidirectional flow or unidirectional flow into the gas volume 140 can be used to provide sufficient gas flow to the processing area 126 as needed.

控制氣體流量的方法包括：1) 使用來自質量流量控制器142、143和144的不同流速之多區域 (中心/邊緣/角落/任何其他區域) 控制； 2) 藉由不同的孔口尺寸 (限流器215的尺寸) 之流量控制；3) 進入氣體容積140 (單向或雙向) 之流量方向控制；以及 4) 藉由穿孔磚134中開口220的尺寸、穿孔磚134中開口220的數量、和/或穿孔磚134中開口220的位置之流量控制。The methods of controlling the gas flow include: 1) using multiple areas (center/edge/corner/any other area) control with different flow rates from the mass flow controllers 142, 143 and 144; 2) using different orifice sizes (limits) The size of the flow device 215) the flow control; 3) the flow direction control of the incoming gas volume 140 (one-way or two-way); and 4) by the size of the opening 220 in the perforated brick 134, the number of the opening 220 in the perforated brick 134, And/or the flow control of the position of the opening 220 in the perforated brick 134.

第5圖是從第1圖所示剖線的支撐框架500的底部剖視圖。支撐框架500由多個支撐構件136組成。在第5圖視圖中的支撐框架500 沿第二導管205截面切開的橫截面圖顯示出限流器215的各種直徑 (孔尺寸)。在一實施例中，可基於期望的氣體流動特性來改變或配置每個限流器215的各種孔。Fig. 5 is a bottom cross-sectional view of the support frame 500 taken from the section line shown in Fig. 1. The supporting frame 500 is composed of a plurality of supporting members 136. The cross-sectional view of the support frame 500 cut along the section of the second duct 205 in the view of FIG. 5 shows various diameters (hole sizes) of the restrictor 215. In an embodiment, the various orifices of each restrictor 215 may be changed or configured based on the desired gas flow characteristics.

在此實施例中，每個限流器215包括第一直徑部分505、第二直徑部分510和第三直徑部分515。第一直徑部分505、第二直徑部分510和第三直徑部分515之每一者的直徑係不同或相同的。可基於噴頭124的期望流動特性來選擇每個直徑。在一實施例中，這裡的第一直徑部分505具有最小的直徑，這裡的第三直徑部分515具有最大的直徑，而第二直徑部分510具有介於第一直徑部分505和第三直徑部分515之間的直徑。在所示實施例中，在支撐框架500的中心部分中示出了具有第一直徑部分505的多個限流器215，而在支撐框架500的外部部分中示出了具有第三直徑部分515的多個限流器215。In this embodiment, each restrictor 215 includes a first diameter portion 505, a second diameter portion 510, and a third diameter portion 515. The diameter of each of the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515 is different or the same. Each diameter can be selected based on the desired flow characteristics of the spray head 124. In an embodiment, the first diameter portion 505 here has the smallest diameter, the third diameter portion 515 here has the largest diameter, and the second diameter portion 510 has a diameter between the first diameter portion 505 and the third diameter portion 515. The diameter between. In the illustrated embodiment, a plurality of flow restrictors 215 having a first diameter portion 505 are shown in the central portion of the support frame 500, and a third diameter portion 515 is shown in the outer portion of the support frame 500 The multiple restrictors 215.

此外，在中心部分和外部部分之間的中間區域中示出了具有第二直徑部分510的多個限流器215。在其他實施例中，具有第一直徑部分505、第二直徑部分510和第三直徑部分515的限流器215的位置可如第5圖所示於支撐框架500的部分中顛倒。此外，具有第一直徑部分505，第二直徑部分510和第三直徑部分515的限流器215可根據期望的特性置於支撐框架500的各種部分中，並藉由氣體容積140進行控制。在一些實施例中，穿過噴頭124的均勻氣流可能是期望的。然而，在其他實施例中，流向噴頭124的每個氣體容積140的氣流可能是不均勻的。氣流不均勻可能是由於處理腔室100的某些物理結構和/或幾何形狀所導致。舉例而言，相較於噴頭124的其他部分中的氣流，可能期望在鄰近傳送通口114 (示出於第1圖) 的噴頭124的部分中具有更多的氣流。In addition, a plurality of flow restrictors 215 having a second diameter portion 510 are shown in the middle area between the central portion and the outer portion. In other embodiments, the position of the restrictor 215 having the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515 may be reversed in the portion of the support frame 500 as shown in FIG. 5. In addition, the restrictor 215 having the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515 can be placed in various portions of the support frame 500 according to desired characteristics, and controlled by the gas volume 140. In some embodiments, a uniform air flow through the showerhead 124 may be desired. However, in other embodiments, the air flow to each gas volume 140 of the shower head 124 may be uneven. The uneven air flow may be caused by certain physical structures and/or geometric shapes of the processing chamber 100. For example, it may be desirable to have more airflow in the portion of the nozzle 124 adjacent to the conveying port 114 (shown in FIG. 1) than the airflow in other parts of the nozzle 124.

本揭露的實施例包括用於噴頭的方法和設備以及能夠在大面積基板上形成一或多層薄膜之具有噴頭的電漿沉積腔室。可藉由由單個穿孔磚134、專用於穿孔磚134和/或流量控制器142、143和144中的特定者的線圈130所配置之結合來控制電漿均勻性和氣體 (或前驅)流，並可藉由流量限制器215的尺寸和/或位置來來控制電漿均勻性和氣體 (或前驅)流。Embodiments of the present disclosure include methods and equipment for shower heads and a plasma deposition chamber with shower heads capable of forming one or more layers of thin films on a large-area substrate. The plasma uniformity and gas (or precursor) flow can be controlled by the combination of a single perforated brick 134, a coil 130 dedicated to the perforated brick 134 and/or a specific one of the flow controllers 142, 143 and 144, The size and/or position of the flow restrictor 215 can be used to control plasma uniformity and gas (or precursor) flow.

儘管前述內容指向本揭露的實施例，但在不脫離本揭露的基本範圍的情況下可設計本揭露的其他和進一步的實施例，以及其範圍由下文之申請專利範圍確定。Although the foregoing content points to the embodiments of the disclosure, other and further embodiments of the disclosure can be designed without departing from the basic scope of the disclosure, and their scope is determined by the scope of patent application below.

100:處理腔室 102:基板 104:腔室主體 106:蓋組件 108:支撐組件 110:軸體 112:驅動器 114:傳送通口 116:升舉銷 118:底部 120:基板接收表面 122:背板 124:噴頭 126:處理區域 128:電漿源 130:線圈 132:面板 133:地面 134:穿孔磚 136:支撐構件 138:介電板 140:氣體容積 142,143,144:流量控制器 200:第一導管 205:第二導管 210:開口 215:限流器 220:開口 225:穿孔條 230:開口 235:增壓室 240:固定件 245:接口部分 250:可移除條帶 255:冷卻劑通道 260:流體源 265:密封件 270:擱板 275:容積 280:接口構件 285:固定件 290:導體圖案 295A:電輸入端子 295B:電輸出端子 300A:中央區域 300B:中間區域 300C,300D:外部區域 305:固定件 400:長度 405:寬度 410,415:箭頭 420:邊緣區域 425:角落區域 430:中心區域 500:支撐框架 505:第一直徑部分 510:第二直徑部分 515:第三直徑部分100: processing chamber 102: substrate 104: Chamber body 106: cover assembly 108: Support component 110: Shaft 112: drive 114: Transmission port 116: lift pin 118: bottom 120: substrate receiving surface 122: Backplane 124: print head 126: Processing area 128: Plasma source 130: coil 132: Panel 133: Ground 134: Perforated Brick 136: support member 138: Dielectric Board 140: gas volume 142,143,144: flow controller 200: first catheter 205: second catheter 210: opening 215: current limiter 220: opening 225: perforated strip 230: opening 235: pressurized room 240: fixed parts 245: Interface part 250: Removable strip 255: coolant channel 260: Fluid Source 265: Seal 270: shelf 275: Volume 280: Interface component 285: fixed parts 290: Conductor pattern 295A: Electrical input terminal 295B: electrical output terminal 300A: Central area 300B: Middle area 300C, 300D: outer area 305: fixed parts 400: length 405: width 410,415: Arrow 420: edge area 425: corner area 430: Central area 500: support frame 505: first diameter part 510: second diameter part 515: third diameter part

因此，為了可詳細地理解本揭露的上述特徵的方式，可藉由參考實施例和描述其中一些實施例的附圖來對本揭露進行更詳細的描述、概略地統整上述內容。然而，應當注意的是，附圖僅示出本揭露的典型實施例，並且因為本揭露可允許其他等效的實施例而因此不應被認為是對其範圍限制。 第1圖是示出根據本揭露的一實施例之示例性處理腔室的截面側視圖。 第2A圖是第1圖的蓋組件的一部分的放大圖。 第2B圖是線圈的一實施例的俯視圖。 第3A圖是噴頭的面板之一實施例的底部平面圖。 第3B圖是噴頭的面板之另一實施例的局部底部平面圖。 第4圖是示出噴頭的流量控制之另一實施例的示意性底部平面圖。 第5圖是用於噴頭的支撐框架的橫截面平面圖。 為了便於理解，在可能的地方使用了相同的元件符號來表示圖式中共有的相同元件。一實施例中所揭露的元件可在沒有具體敘述的情況下有益地用於其他實施例係可預期的。Therefore, in order to understand the above-mentioned features of the present disclosure in detail, the present disclosure may be described in more detail by referring to the embodiments and the drawings describing some of the embodiments, and the above content may be summarized. However, it should be noted that the drawings only show typical embodiments of the present disclosure, and because the present disclosure may allow other equivalent embodiments, it should not be considered as limiting its scope. Figure 1 is a cross-sectional side view showing an exemplary processing chamber according to an embodiment of the present disclosure. Fig. 2A is an enlarged view of a part of the cap assembly of Fig. 1. Fig. 2B is a plan view of an embodiment of the coil. Figure 3A is a bottom plan view of an embodiment of the panel of the shower head. Figure 3B is a partial bottom plan view of another embodiment of the spray head panel. Figure 4 is a schematic bottom plan view showing another embodiment of flow control of the spray head. Figure 5 is a cross-sectional plan view of the support frame for the spray head. To facilitate understanding, the same component symbols are used where possible to represent the same components in the drawings. It is expected that the elements disclosed in one embodiment can be beneficially used in other embodiments without specific description.

100:處理腔室 100: processing chamber

102:基板 102: substrate

104:腔室主體 104: Chamber body

106:蓋組件 106: cover assembly

108:支撐組件 108: Support component

110:軸體 110: Shaft

112:驅動器 112: drive

114:傳送通口 114: Transmission port

116:升舉銷 116: lift pin

118:底部 118: bottom

120:基板接收表面 120: substrate receiving surface

122:背板 122: Backplane

124:噴頭 124: print head

126:處理區域 126: Processing area

128:電漿源 128: Plasma source

130:線圈 130: coil

132:面板 132: Panel

133:地面 133: Ground

134:穿孔磚 134: Perforated Brick

136:支撐構件 136: support member

138:介電板 138: Dielectric Board

140:氣體容積 140: gas volume

142,143,144:流量控制器 142,143,144: flow controller

Claims (20)

一種電漿沉積腔室，包括： 一噴頭，具有多個穿孔磚，每個穿孔磚耦接於多個支撐構件中的一者或多者； 多個介電板，該些介電板中的一者對應於該些穿孔磚中的一者；以及 多個電感耦合器，其中該些電感耦合器中的一電感耦合器對應於該些介電板中的一者，其中該些支撐構件提供前驅氣體到該些電感耦合器和該些穿孔磚之間所形成的一容積中。A plasma deposition chamber includes: A nozzle with a plurality of perforated bricks, each perforated brick is coupled to one or more of the plurality of supporting members; A plurality of dielectric plates, one of the dielectric plates corresponds to one of the perforated bricks; and A plurality of inductive couplers, wherein an inductive coupler of the inductive couplers corresponds to one of the dielectric plates, wherein the supporting members provide precursor gas to the inductive couplers and the perforated bricks In a volume formed by the time. 如請求項1所述之腔室，其中該些支撐構件的每一者包括形成在其中的一導線，用以使該前驅氣體流動。The chamber according to claim 1, wherein each of the supporting members includes a wire formed therein for flowing the precursor gas. 如請求項1所述之腔室，其中該些支撐構件的每一者包括形成在其中的一冷卻劑通道，用以使一冷卻劑流動。The chamber according to claim 1, wherein each of the supporting members includes a coolant channel formed therein for flowing a coolant. 如請求項1所述之腔室，還包括與該些電感耦合器的每一者相關之一介電板，該介電板界定出該容積的一側。The chamber according to claim 1, further comprising a dielectric plate associated with each of the inductive couplers, the dielectric plate defining one side of the volume. 如請求項1所述之腔室，其中該些穿孔磚和該些支撐構件的每一者包括一接口部分。The chamber according to claim 1, wherein each of the perforated bricks and the supporting members includes an interface part. 如請求項5所述之腔室，其中每個接口部分包括一可移除條帶。The chamber according to claim 5, wherein each interface part includes a removable strip. 如請求項1所述之腔室，其中該些穿孔磚的一部分由一穿孔條隔開。The chamber according to claim 1, wherein a part of the perforated bricks is separated by a perforated strip. 如請求項7所述之腔室，其中每個穿孔條藉由一接口部分耦接到該些支撐構件中的一支撐構件。The chamber according to claim 7, wherein each perforated strip is coupled to a supporting member of the supporting members through an interface part. 如請求項8所述之腔室，其中每個接口部分包括一可移除條帶。The chamber according to claim 8, wherein each interface part includes a removable strip. 一種用於一電漿沉積腔室的噴頭，該噴頭包括： 一支撐構件，包括多個第一支撐表面和多個第二支撐表面，其中該些第一支撐表面設置成在一第一方向上與該些第二支撐表面相距一第一距離； 多個氣體輸送組件，包括多個穿孔磚和多個介電板，其中該些氣體輸送組件的每一者包括： 一穿孔磚，設置在該些第一支撐表面中的一第一支撐表面上；及 一介電板，設置在該些第二支撐表面中的一第二支撐表面上， 其中，在該介電板的表面和該穿孔磚的表面之間定義出一氣體容積； 多個氣體輸送口，其中每個氣體輸送口配置成輸送一氣體到該些氣體輸送組件的該氣體容積；以及 一線圈，設置在該噴頭內的該些氣體輸送組件中的一者或多者上。A spray head for a plasma deposition chamber, the spray head includes: A supporting member, comprising a plurality of first supporting surfaces and a plurality of second supporting surfaces, wherein the first supporting surfaces are arranged at a first distance from the second supporting surfaces in a first direction; A plurality of gas conveying components, including a plurality of perforated bricks and a plurality of dielectric plates, wherein each of the gas conveying components includes: A perforated brick arranged on a first supporting surface among the first supporting surfaces; and A dielectric board is arranged on a second support surface among the second support surfaces, Wherein, a gas volume is defined between the surface of the dielectric plate and the surface of the perforated brick; A plurality of gas delivery ports, wherein each gas delivery port is configured to deliver a gas to the gas volume of the gas delivery components; and A coil is arranged on one or more of the gas delivery components in the shower head. 如請求項10所述之噴頭，其中該支撐構件包括形成在其中的一導線，用以使該前驅氣體流動。The shower head according to claim 10, wherein the supporting member includes a wire formed therein for flowing the precursor gas. 如請求項10所述之噴頭，其中該支撐構件包括形成在其中的一冷卻劑通道，用以使一冷卻劑流動。The shower head according to claim 10, wherein the supporting member includes a coolant passage formed therein for flowing a coolant. 如請求項10所述之噴頭，該介電板界定出該氣體容積的一側。In the shower head according to claim 10, the dielectric plate defines one side of the gas volume. 如請求項10所述之噴頭，其中該些穿孔磚和該支撐構件的每一者包括一接口部分。The spray head according to claim 10, wherein each of the perforated bricks and the supporting member includes an interface part. 如請求項14所述之噴頭，其中每個接口部分包括一可移除條帶。The shower head according to claim 14, wherein each interface part includes a removable strip. 如請求項10所述之噴頭，其中該些穿孔磚的一部分由一穿孔條隔開。The spray head according to claim 10, wherein a part of the perforated bricks is separated by a perforated strip. 如請求項16所述之噴頭，其中每個穿孔條藉由一接口部分耦接到該支撐構件。The spray head according to claim 16, wherein each perforated strip is coupled to the supporting member through an interface part. 如請求項17所述之噴頭，其中每個接口部分包括一可移除條帶。The spray head according to claim 17, wherein each interface part includes a removable strip. 一種電漿沉積腔室，包括： 一噴頭，具有多個穿孔磚； 一電感耦合器，對應多個穿孔磚的一者或多者；以及 多個支撐構件，用以支撐該些穿孔磚的每一者，其中該些支撐構件的一者或多者提供前驅氣體到形成在該電感耦合器和該穿孔磚之間的一容積中。A plasma deposition chamber includes: One nozzle with multiple perforated bricks; An inductive coupler corresponding to one or more of the multiple perforated bricks; and A plurality of support members are used to support each of the perforated bricks, wherein one or more of the support members provide precursor gas into a volume formed between the inductive coupler and the perforated brick. 如請求項19所述之腔室，其中該些穿孔磚和該些支撐構件的每一者包括一接口部分，且每個接口部分包括一可移除條帶。The chamber according to claim 19, wherein each of the perforated bricks and the supporting members includes an interface part, and each interface part includes a removable strip.
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