KR101792310B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR101792310B1
KR101792310B1 KR1020140056267A KR20140056267A KR101792310B1 KR 101792310 B1 KR101792310 B1 KR 101792310B1 KR 1020140056267 A KR1020140056267 A KR 1020140056267A KR 20140056267 A KR20140056267 A KR 20140056267A KR 101792310 B1 KR101792310 B1 KR 101792310B1
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KR
South Korea
Prior art keywords
frequency power
power
control unit
unit
oscillation
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KR1020140056267A
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English (en)
Korean (ko)
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KR20140134613A (ko
Inventor
료 사토
하지메 나이토
츠토무 사토요시
아츠키 후루야
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20140134613A publication Critical patent/KR20140134613A/ko
Application granted granted Critical
Publication of KR101792310B1 publication Critical patent/KR101792310B1/ko

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020140056267A 2013-05-14 2014-05-12 플라즈마 처리 장치 KR101792310B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013101827A JP6126905B2 (ja) 2013-05-14 2013-05-14 プラズマ処理装置
JPJP-P-2013-101827 2013-05-14

Publications (2)

Publication Number Publication Date
KR20140134613A KR20140134613A (ko) 2014-11-24
KR101792310B1 true KR101792310B1 (ko) 2017-11-01

Family

ID=51883016

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140056267A KR101792310B1 (ko) 2013-05-14 2014-05-12 플라즈마 처리 장치

Country Status (4)

Country Link
JP (1) JP6126905B2 (ja)
KR (1) KR101792310B1 (ja)
CN (1) CN104157541B (ja)
TW (1) TWI627654B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6670697B2 (ja) * 2016-04-28 2020-03-25 東京エレクトロン株式会社 プラズマ処理装置
US10504699B2 (en) * 2018-04-20 2019-12-10 Applied Materials, Inc. Phased array modular high-frequency source

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001036364A (ja) * 1999-07-21 2001-02-09 Jeol Ltd 高周波電源
CN201629893U (zh) * 2009-11-16 2010-11-10 地质矿产部北京地质仪器厂 电感耦合等离子体光源功率控制装置
WO2011110652A1 (de) * 2010-03-11 2011-09-15 Hüttinger Elektronik Gmbh + Co. Kg Plasmaversorgungsanordnung mit mehreren leistungskopplungsstufen

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JPH056799A (ja) * 1991-06-27 1993-01-14 Yokogawa Electric Corp Ｉｃｐ用ｒｆ電源装置
JPH07161494A (ja) * 1993-12-08 1995-06-23 Jeol Ltd Ｒｆ電源
US5712592A (en) * 1995-03-06 1998-01-27 Applied Materials, Inc. RF plasma power supply combining technique for increased stability
US6043607A (en) * 1997-12-16 2000-03-28 Applied Materials, Inc. Apparatus for exciting a plasma in a semiconductor wafer processing system using a complex RF waveform
JP3544136B2 (ja) * 1998-02-26 2004-07-21 キヤノン株式会社 プラズマ処理装置及びプラズマ処理方法
US6157258A (en) * 1999-03-17 2000-12-05 Ameritherm, Inc. High frequency power amplifier
JP2002110566A (ja) * 2000-10-02 2002-04-12 Mitsubishi Heavy Ind Ltd 高周波プラズマ生成装置
JP3897582B2 (ja) * 2000-12-12 2007-03-28 キヤノン株式会社 真空処理方法、真空処理装置、半導体装置の製造方法および半導体装置
CN1305353C (zh) * 2001-12-10 2007-03-14 东京毅力科创株式会社 高频电源及其控制方法、和等离子体处理装置
JP3992580B2 (ja) * 2002-10-01 2007-10-17 東京エレクトロン株式会社 プラズマ処理装置
KR100783983B1 (ko) * 2003-01-16 2007-12-11 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 고주파 전력 공급장치 및 플라즈마 발생장치
CN2678152Y (zh) * 2003-12-31 2005-02-09 江阴市新潮科技有限公司 射频功率合成器
JP4773165B2 (ja) * 2005-08-31 2011-09-14 株式会社ダイヘン 高周波電源装置
JP2007103970A (ja) * 2007-01-09 2007-04-19 Masayoshi Murata 電極への電力供給方法、該電力供給方法を用いたプラズマ表面処理方法及びプラズマ表面処理装置
JP4288307B2 (ja) * 2007-03-30 2009-07-01 三井造船株式会社 プラズマ電子温度の測定方法および装置
CN101287327B (zh) * 2007-04-13 2011-07-20 中微半导体设备(上海)有限公司 射频功率源系统及使用该射频功率源系统的等离子体反应腔室
KR101003382B1 (ko) * 2008-02-13 2010-12-22 주식회사 유진테크 플라즈마 처리장치 및 방법
US7811410B2 (en) * 2008-06-19 2010-10-12 Lam Research Corporation Matching circuit for a complex radio frequency (RF) waveform
CN201478679U (zh) * 2009-08-25 2010-05-19 深圳市大族激光科技股份有限公司 一种射频电源装置
CN101640369B (zh) * 2009-08-25 2011-05-25 深圳市大族激光科技股份有限公司 一种射频电源装置
JP6049047B2 (ja) * 2011-09-30 2016-12-21 Ｎｅｃスペーステクノロジー株式会社 冗長化増幅器及びその切替方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001036364A (ja) * 1999-07-21 2001-02-09 Jeol Ltd 高周波電源
CN201629893U (zh) * 2009-11-16 2010-11-10 地质矿产部北京地质仪器厂 电感耦合等离子体光源功率控制装置
WO2011110652A1 (de) * 2010-03-11 2011-09-15 Hüttinger Elektronik Gmbh + Co. Kg Plasmaversorgungsanordnung mit mehreren leistungskopplungsstufen

Also Published As

Publication number Publication date
CN104157541B (zh) 2017-09-22
CN104157541A (zh) 2014-11-19
JP2014222717A (ja) 2014-11-27
TW201511074A (zh) 2015-03-16
JP6126905B2 (ja) 2017-05-10
KR20140134613A (ko) 2014-11-24
TWI627654B (zh) 2018-06-21

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