CN104122687B - 平面显示装置 - Google Patents

平面显示装置 Download PDF

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Publication number
CN104122687B
CN104122687B CN201410165485.XA CN201410165485A CN104122687B CN 104122687 B CN104122687 B CN 104122687B CN 201410165485 A CN201410165485 A CN 201410165485A CN 104122687 B CN104122687 B CN 104122687B
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China
Prior art keywords
mentioned
electrode
wiring
substrate
dummy
Prior art date
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Active
Application number
CN201410165485.XA
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English (en)
Chinese (zh)
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CN104122687A (zh
Inventor
化生正人
高桥博
高桥一博
野中正信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Magno Haote Co ltd
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Japan Display Central Inc
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Publication of CN104122687A publication Critical patent/CN104122687A/zh
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Publication of CN104122687B publication Critical patent/CN104122687B/zh
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/88Dummy elements, i.e. elements having non-functional features
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441Interconnections, e.g. scanning lines
    • H10D86/443Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Layout of the interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386Geometry or layout of the interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441Interconnections, e.g. scanning lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN201410165485.XA 2013-04-26 2014-04-23 平面显示装置 Active CN104122687B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-094505 2013-04-26
JP2013094505A JP6130721B2 (ja) 2013-04-26 2013-04-26 平面表示装置

Publications (2)

Publication Number Publication Date
CN104122687A CN104122687A (zh) 2014-10-29
CN104122687B true CN104122687B (zh) 2017-01-18

Family

ID=51768162

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410165485.XA Active CN104122687B (zh) 2013-04-26 2014-04-23 平面显示装置

Country Status (3)

Country Link
US (1) US9236424B2 (enrdf_load_stackoverflow)
JP (1) JP6130721B2 (enrdf_load_stackoverflow)
CN (1) CN104122687B (enrdf_load_stackoverflow)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10180700B2 (en) 2013-07-01 2019-01-15 Lg Display Co., Ltd. Display device
CN105633114A (zh) * 2014-11-20 2016-06-01 群创光电股份有限公司 显示面板及包含其的显示设备
JP6378154B2 (ja) * 2015-10-08 2018-08-22 双葉電子工業株式会社 有機el表示装置
CN105243981B (zh) 2015-11-06 2018-04-20 京东方科技集团股份有限公司 显示面板和显示装置
KR102462070B1 (ko) * 2015-12-31 2022-11-01 엘지디스플레이 주식회사 디스플레이패널 및 그 검사 방법
JP6539214B2 (ja) * 2016-01-19 2019-07-03 株式会社ジャパンディスプレイ センサ付き表示装置
KR102692576B1 (ko) * 2016-07-20 2024-08-07 삼성디스플레이 주식회사 디스플레이 장치
JP6974743B2 (ja) * 2016-08-01 2021-12-01 株式会社ソシオネクスト 半導体集積回路装置
CN107785340A (zh) * 2016-08-24 2018-03-09 上海和辉光电有限公司 一种球栅阵列封装结构
KR102567483B1 (ko) * 2016-09-09 2023-08-16 삼성디스플레이 주식회사 표시 장치
CN108573997B (zh) 2017-03-14 2023-12-01 三星显示有限公司 显示装置
CN110148592B (zh) * 2019-05-21 2020-12-11 上海天马有机发光显示技术有限公司 一种显示面板、包含其的显示装置
KR20210130333A (ko) * 2020-04-21 2021-11-01 삼성디스플레이 주식회사 표시장치 및 그 검사방법
KR20210155444A (ko) * 2020-06-15 2021-12-23 삼성디스플레이 주식회사 디스플레이 장치
CN112965305B (zh) * 2020-07-08 2023-11-17 友达光电股份有限公司 显示面板
US12408526B2 (en) 2020-10-22 2025-09-02 Chengdu Boe Optoelectronics Technology Co., Ltd. Display panel and display apparatus
WO2022082613A1 (en) * 2020-10-22 2022-04-28 Boe Technology Group Co., Ltd. Display panel and display apparatus
KR20230044047A (ko) * 2021-09-24 2023-04-03 삼성디스플레이 주식회사 표시 장치
KR20240050530A (ko) * 2022-10-11 2024-04-19 삼성디스플레이 주식회사 디스플레이 장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3629079B2 (ja) * 1994-12-21 2005-03-16 株式会社東芝 表示装置およびその製造方法
US5677745A (en) 1994-12-21 1997-10-14 Kabushiki Kaisha Toshiba LCD with electrostatic discharge projections
KR970707464A (ko) * 1995-09-11 1997-12-01 요트. 에스. 슈루페 액정 디스플레이 장치(Liquid crystal disaplay device)
JP3648950B2 (ja) * 1997-11-05 2005-05-18 セイコーエプソン株式会社 液晶表示装置
US6922226B2 (en) * 1999-12-31 2005-07-26 Lg. Philips Lcd Co. Ltd. Liquid crystal display device implementing improved electrical lines and the fabricating method
JP4347581B2 (ja) * 2003-01-31 2009-10-21 オプトレックス株式会社 液晶表示パネル
TW200638143A (en) 2004-10-29 2006-11-01 Toshiba Matsushita Display Tec Display device
JP2006227290A (ja) 2005-02-17 2006-08-31 Toshiba Matsushita Display Technology Co Ltd 表示装置
JP4836431B2 (ja) * 2004-10-29 2011-12-14 東芝モバイルディスプレイ株式会社 表示装置
JP4945070B2 (ja) * 2004-10-29 2012-06-06 東芝モバイルディスプレイ株式会社 表示装置
KR101137869B1 (ko) * 2005-06-30 2012-04-23 엘지디스플레이 주식회사 액정표시소자
KR20080039699A (ko) * 2006-11-01 2008-05-07 삼성전자주식회사 회로 기판 및 이를 포함 하는 표시 장치
KR20080060442A (ko) * 2006-12-27 2008-07-02 엘지디스플레이 주식회사 액정표시장치와 그 제조방법
TWI339434B (en) * 2007-06-29 2011-03-21 Chimei Innolux Corp Display panel and electric apparatus with esd protection effect
KR101113031B1 (ko) * 2009-09-25 2012-02-27 주식회사 실리콘웍스 드라이버 집적회로 칩의 패드 배치 구조
KR101502118B1 (ko) * 2010-11-01 2015-03-12 삼성디스플레이 주식회사 표시 장치

Also Published As

Publication number Publication date
JP2014215545A (ja) 2014-11-17
US20140319528A1 (en) 2014-10-30
US9236424B2 (en) 2016-01-12
JP6130721B2 (ja) 2017-05-17
CN104122687A (zh) 2014-10-29

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Effective date of registration: 20250725

Address after: Tokyo, Japan

Patentee after: Magno Haote Co.,Ltd.

Country or region after: Japan

Address before: Tokyo, Japan

Patentee before: JAPAN DISPLAY Inc.

Country or region before: Japan