CN104081285B - The method of substrate holder and manufacture substrate holder - Google Patents
The method of substrate holder and manufacture substrate holder Download PDFInfo
- Publication number
- CN104081285B CN104081285B CN201380007834.9A CN201380007834A CN104081285B CN 104081285 B CN104081285 B CN 104081285B CN 201380007834 A CN201380007834 A CN 201380007834A CN 104081285 B CN104081285 B CN 104081285B
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- Prior art keywords
- substrate
- knuckle
- substrate holder
- liquid
- patterning devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/20—Direct sintering or melting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/34—Laser welding for purposes other than joining
- B23K26/342—Build-up welding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/18—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine for positioning only
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y10/00—Processes of additive manufacturing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y80/00—Products made by additive manufacturing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70416—2.5D lithography
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/20—Direct sintering or melting
- B22F10/25—Direct deposition of metal particles, e.g. direct metal deposition [DMD] or laser engineered net shaping [LENS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/20—Direct sintering or melting
- B22F10/28—Powder bed fusion, e.g. selective laser melting [SLM] or electron beam melting [EBM]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/60—Treatment of workpieces or articles after build-up
- B22F10/66—Treatment of workpieces or articles after build-up by mechanical means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Composite Materials (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Magnetic Heads (AREA)
Abstract
There is main body for the object retainer of lithographic equipment, the main body has surface.The multiple knuckles for supporting object are formed on a surface or in the aperture of pellicular cascade.By at least one of laser sintered formation knuckle.At least one of knuckle by laser sintered formation can be previously passed laser sintered or the reparation of the damage knuckle of other method formation.
Description
Cross-Reference to Related Applications
This application claims on 2 3rd, 2012 submit to U.S. Provisional Application on April 9th, 61/594,857,2012 submit to
The rights and interests of the U.S. Provisional Application 61/621,660 that U.S. Provisional Application on April 9th, 61/621,648 and 2012 submits to, lead to herein
Reference is crossed to be integrally incorporated herein above-mentioned application.
Technical field
The present invention relates to the method for substrate holder, lithographic equipment, device making method and manufacture substrate holder.
Background technology
Lithographic equipment is the machine for desired pattern being applied on substrate, being commonly applied on the target part of substrate.
Lithographic equipment can be used in the manufacture of such as integrated circuit (IC).In this case, it is possible to use be alternatively referred to as mask
Or the patterning devices of mask produce the circuit pattern on each layer to be formed on IC.The pattern can be transferred to substrate
On target part (such as the part including one or several nude films) on (such as silicon wafer).The transfer of pattern is typically
It is imaged on the via on radiation-sensitive materials (resist) layer set on substrate.Generally, single substrate will be comprising subsequent composition
Adjacent target portions network.Known lithographic equipment includes so-called stepper and so-called scanner, in stepper
By by whole pattern single exposure in each target part is radiated on target part, by assigned direction in scanner
In (" scanning " direction) by radiation beam scan pattern, while parallel with the direction or anti-parallel synchronous scanning substrate is radiated
Each target part.On substrate, pattern can also be transferred to substrate from patterning devices by by graphic-print.
The substrate in immersion lithographic projector equipment in the liquid (such as water) with relative high index of refraction is had been proposed that, is made
The space between substrate and the final element of optical projection system must be filled in.In one embodiment, liquid is distilled water, but can be with
Use another liquid.Embodiments of the invention will be described with reference to liquid.However, another fluid can be suitable, particularly moisten
Wet fluid, incompressible fluid and/or with than air higher refractive index, ideally than the fluid of water higher refractive index.Exclude
Fluid outside gas is especially desired to.The purpose of do so is to realize the imaging of smaller feature, because exposing radiation exists
Will be with shorter wavelength in liquid.(effect of liquid can also be considered as the effective numerical aperture (NA) of increase system and increase
Depth of focus).Other immersion liquids are proposed, including with the water for being suspended at solid particle therein (such as quartz) or with nanometer
The liquid of particle suspension thing (there is the maximum sized particle of up to 10nm).The particle of suspension can have or can not have
With wherein they be suspended in that liquid therein is similar or identical refractive index.Potentially suitable other liquid include nytron
Thing, such as aromatic hydrocarbon, fluorohydrocarbon and/or the aqueous solution.
The content of the invention
In conventional lithographic equipment, substrate to be exposed can be supported by substrate holder, the substrate holder is then
Supported by substrate table.(but it can have the flat rigid disk that substrate holder is typically on size and dimension corresponding to substrate
There are different sizes or shape).It has prominent array, and the protrusion is referred to as knuckle (burl) or convex spot (pimple), to
Few side protrudes.In one embodiment, substrate holder has prominent array on two opposite sides.In such case
Under, when substrate holder is placed on substrate table, the main body of substrate holder is maintained at the small distance on substrate table, and substrate
The end of the knuckle on the side of retainer is located on the surface of substrate table.Similarly, when substrate dwell is in substrate holder
When on the top of the knuckle on opposite side, substrate is spaced apart with substrate holder.One purpose of do so is to help prevent
The particle (that is, the pollution particle of such as dust granule) being likely to be present on substrate table or substrate holder make substrate holder or
Substrate distortion.Because the total surface region of knuckle is only the sub-fraction of the overall area of substrate or substrate holder, so very may be used
Can any particle will be between knuckle and its presence will be without any influence.
Due to the high acceleration experienced by substrate in the use of the lithographic equipment of high-throughput, substrate letter is insufficient to allow for
Singly rest on the knuckle of substrate holder.It is clamped by original position.Two methods --- the vacuum of known clamping substrate in situ
Clamping and electrostatic clamp.In vacuum chuck, protected between substrate holder and substrate and alternatively in substrate table and substrate
Space segment ground emptying between holder so that substrate keeps by the way that gas thereon or the higher pressure of liquid are in situ.However,
Vacuum chuck may be simultaneously infeasible, and environment and/or beam path wherein near substrate or substrate holder are maintained at low or very
At low pressure, such as extreme ultraviolet (EUV) radiation lithography.In this case, the foot across substrate (or substrate holder) is produced
Enough big pressure differentials are come to clamp it be probably impossible.Therefore (or in other environment) use electrostatic chuck in this environment
Hold.In electrostatic clamp, electrode lifting on substrate table and/or substrate holder to high potential is arranged on, such as 10V is arrived
5000V, and electrostatic force absorption substrate.Thus, the another object of knuckle is to be spaced substrate, substrate holder and substrate table
Open, to realize electrostatic clamp.
Knuckle is used in various other positions that can be in lithographic equipment, other positions are for example in such as mask etc
In the supporter of patterning devices, in the clamper of patterning devices actuation means or substrate and/or in mask clamp bar.Diverse location
In knuckle can have one or more in size on them and other physical properties of different requirement.Can fit
With the distinct methods of manufacture.In many cases, the damage to one or more knuckles may make being replaced with for whole component
It is required.
For example expect provide in the lithographic apparatus using object retainer and manufacture with the knuckle object protect
The method of holder, the retainer such as knuckle with different shape, size and/or component.
According to an aspect of the present invention, there is provided have a kind of manufacture for the object retainer that uses in the lithographic apparatus
Method, the method includes:Main body with surface is provided;And forming multiple knuckles on said surface, the knuckle is from institute
State surface to protrude and with the end surfaces of support object, wherein at least a portion for forming at least one of the knuckle includes
It is laser sintered.
According to an aspect of the present invention, there is provided have a kind of object retainer for using in the lithographic apparatus, this pair
As retainer includes:Main body with surface;And multiple knuckles, set on said surface and with the end of support object
Surface, wherein by it is laser sintered form the knuckle at least one at least a portion.
According to an aspect of the present invention, there is provided have a kind of lithographic equipment, including:Supporting construction, is configured to support composition
Equipment;Projection system, is arranged to be projected on substrate by the beam of the patterning devices composition;And substrate holder, cloth
The holding substrate is set to, the substrate holder is as described herein.
Brief description of the drawings
Now with reference to accompanying schematic figure, embodiments of the invention are only described by way of example, correspond in the accompanying drawings
Reference number indicate corresponding part, and wherein:
Fig. 1 depicts lithographic equipment according to an embodiment of the invention;
Fig. 2 and Fig. 3 depict the liquid-supplying system for being used in lithographic projection apparatus;
Fig. 4 depicts another liquid-supplying system for being used in lithographic projection apparatus;
Fig. 5 depicts the stop part that can serve as immersion liquid feed system in one embodiment of the invention with section
Part;
Fig. 6 depicts lithographic equipment according to an embodiment of the invention;
Fig. 7 is the more stereogram of equipment 4100;
Fig. 8 is the more stereogram of the source collector device SO of the equipment of Fig. 6 and Fig. 7;
Fig. 9 depicts substrate table according to an embodiment of the invention and substrate holder with section;
Figure 10 A to Figure 10 E are depicted in the method for manufacture substrate holder according to an embodiment of the invention
Step;
Figure 11 depicts substrate holder according to an embodiment of the invention;
Figure 12 depicts the supporting construction for patterning devices according to an embodiment of the invention;
Figure 13 depicts a part for supporting construction according to embodiments of the present invention with plane;
Figure 14 depicts the supporting construction of Figure 13 with section;
Figure 15 depicts substrate control device according to an embodiment of the invention and clamper;
Figure 16 depicts substrate table according to an embodiment of the invention;
Figure 17 A to Figure 17 C depict the step in the method for reparation substrate holder according to an embodiment of the invention
Suddenly;And
Figure 18 A to Figure 18 C depict the step in the method for reparation substrate holder according to an embodiment of the invention
Suddenly.
Specific embodiment
Fig. 1 schematically depict lithographic equipment according to an embodiment of the invention.The equipment includes:
- illuminator (luminaire) IL, is configured to regulation radiation beam B (such as UV radiation, DUV radiation or EUV-radiation);
- supporting construction (such as mask platform) MT, is configured to support patterning devices (such as mask) MA and be connected to first determine
Position device PM, first locator PM are configured to position patterning devices exactly according to special parameter;
- substrate table (such as wafer station) WT, is configured to keep substrate (such as resist coating chip) W and be connected to second
Locator PW, second locator PW is configured to position substrate exactly according to special parameter;And
- optical projection system (such as refractive projection lens system) PS, is configured to assign radiation beam B's by patterning devices MA
Pattern is projected on the target part C (such as including one or more nude films) of substrate W.
Illuminator can include various types of optical modules, such as guide, shape or control radiate refraction,
Reflection, magnetic, electromagnetism, electrostatic or other types of optical module, or its any combination.
Supporting construction MT keeps patterning devices.Supporting construction MT sets with depending on the orientation of patterning devices, lithographic equipment
The mode of other conditions whether meter and such as patterning devices are maintained in vacuum environment etc keeps patterning devices.Supporting construction
MT can keep patterning devices using machinery, vacuum, electrostatic or other clamping techniques.Supporting construction MT can be frame or platform,
For example can be fixed or movable as needed.Supporting construction MT may insure that patterning devices are for example in the phase on optical projection system
At the position of prestige.The term " mask " of this paper or any of " mask " are used it is considered that and more generic term " patterning devices "
It is synonymous.
Terms used herein " patterning devices " should be broadly construed as reference and can be used for being assigned using pattern in its section
Give the arbitrary equipment of radiation beam so that create pattern in the target part of substrate.If it should be noted that for example, pattern includes phase
Feature or so-called supplemental characteristic are moved, then assigns the phase that the pattern of radiation beam can inaccurately correspond in substrate target part
Hope pattern.Generally, the pattern for assigning radiation beam will be corresponding in the device (such as integrated circuit) created in target part
Concrete function layer.
Patterning devices can be transmission or reflection.The example of patterning devices include mask, programmable mirror array and
Programmable LCD panel.Mask is well known in photoetching, and including such as binary, alternating phase-shift and attenuating phase-shift etc
Mask-type and various hybrid mask types.The example of programmable mirror array uses the matrix arrangements of small minute surface, each
Minute surface can be inclined individually to be reflected in the radiation beam that different directions are come in.Inclined minute surface is in the spoke reflected by mirror matrix
Pattern is assigned in beam.
The system that terms used herein " optical projection system " should be broadly construed as cover any type, suitably for being made
The other factorses for using etc of the use of exposing radiation or such as immersion liquid or vacuum, including refraction, reflection, reflexed
Penetrate, magnetic, electromagnetism and electrostatic optics system or its any combination.The use of the term " projecting lens " of this paper may be considered with
More general term " optical projection system " is synonymous.
As depicted herein, equipment is transmission-type (for example with transmission mask).Alternatively, equipment can be anti-
(programmable mirror array or use reflection mask) for example with the above-mentioned type of emitting.
Lithographic equipment can be two or more substrate support structures and/or two with such as substrate platen or substrate table
The type of individual or more the supporting construction for patterning devices.In the equipment with multiple substrate platens, all substrate platens
Can be equivalent and interchangeable.In one embodiment, at least one of multiple substrate platens are particularly suitable for exposure step
And at least one of multiple substrate platen is particularly suitable for measurement or preparation process suddenly,.In an embodiment of the present invention, it is multiple
One or more in substrate platen are replaced by measuring table.Measuring table includes such as sensor detector and/or sensor
At least a portion in one or more sensing systems of the target of system etc, but not support substrate.Instead of for composition
The substrate platen or supporting construction of equipment, measuring table can be positioned in projected bundle.In such devices, can use parallel
Complementary platform, or preparation process can be performed on one or more platforms, and one or more of the other platform is used to expose.
Reference picture 1, luminaire IL receives the radiation beam from radiation source S O.For example when the source is excimer laser,
The source and lithographic equipment can be single entities.In this case, the source is not considered to form of lithographic equipment
Point, and radiation beam reaches luminaire IL by means of beam transmission system BD from source SO, and beam transmission system BD for example includes being adapted to
Guiding minute surface and/or beam expander.In other cases, for example when the source is mercury lamp, the source can be the one of lithographic equipment
Body part.If it is required, then source SO and luminaire IL can be referred to as radiating system together with beam transmission system BD.
Luminaire IL can include that adjuster AM, adjuster AM are configured to adjust the angular intensity distribution of radiation beam.
In general, at least outer and/or interior radiation scope of the intensity distribution in can adjusting the pupil plane of luminaire (is referred to as respectively
σ-outer and σ-interior).Additionally, luminaire IL can include various other components, such as integrator IN and concentrator CO.Luminaire can
For regulation radiation beam, there is desired uniformity and intensity distribution in its section.Similar to source SO, luminaire IL can be with
It is considered as or can be not considered to form a part for lithographic equipment.For example, luminaire IL can be the integration of lithographic equipment
Part can be the entity separated with lithographic equipment.In latter case, lithographic equipment may be configured to allow luminaire
IL is mounted thereto.Alternatively, luminaire IL is detachable and can be with (such as by lithographic equipment manufacturer or another supplier)
It is provided separately.
Radiation beam B is incident on patterning devices (such as mask) MA, and patterning devices MA is maintained at supporting construction and (for example covers
Die station) on MT, radiation beam B is by patterning devices composition.It is advanced through after patterning devices MA, radiation beam B passes through optical projection system PS,
Be gathered in beam on the target part C of substrate W by optical projection system PS.Embodiments in accordance with the present invention, substrate W passes through substrate holder
It is maintained on substrate table WT, and substrate W as described further below.By means of the second locator PW and position sensor IF
(such as interference apparatus, linear encoder or capacitance type sensor), can exactly move substrate table WT, such as so as in radiation
Different target part C are positioned in the path of beam B.Similarly, for example after being obtained from the machinery of mask library or in scanning
Period, it is possible to use the first locator PM and another location sensor (being not explicitly depicted in Fig. 1) come the path on radiation beam B
Patterning devices MA is positioned exactly.Generally, can be (thick fixed by means of the long-stroke module for the part for forming the first locator PM
Position) and short stroke module (fine positioning), realize the movement of supporting construction MT.It is likewise possible to use the second locator PM of formation
A part long-stroke module and short stroke module, realize the movement of substrate table WT.In stepper (relative with scanner)
In the case of, supporting construction MT can be connected only to short-stroke actuator or can be fixed.Can be using patterning devices to fiducial mark
Be aligned for patterning devices MA and substrate W by note M1, M2 and substrate alignment mark P1, P2.Although shown substrate alignment mark is occupied
Dedicated target portion, but they may be located between target location space in (these are known as scribe line alignment mark).Class
As, set on patterning devices MA wherein in the situation of more than one nude film, composition can be positioned between nude film and set
Standby alignment mark.
Shown equipment is used at least one that can be in following pattern:
1. in step mode, supporting construction MT and substrate table WT keeps substantially static, and assigns the whole figure of radiation beam
Once (i.e. single static exposure) is projected on target part C case.Then the dislodged substrate platform WT in X and/or Y-direction so that
Different target part C can be exposed.In step mode, the full-size of exposure field is imaged in being limited in single static exposure
Target part C size.
2. in scan pattern, synchronous scanning supporting construction MT and substrate table WT, while the pattern that will assign radiation beam is thrown
Shadow is to (i.e. single dynamic exposure) on target part C.Substrate table WT can be by throwing relative to the speed of supporting construction MT and direction
(the going) of shadow system PS is amplified and image reversal characteristics determine.In scan pattern, the full-size of exposure field is in single dynamic
The width (in non-scan direction) of limited target part in exposure, and the length of scanning motion determines the height of target part
(in a scanning direction).
3. in another pattern, supporting construction MT keeps substantially static, so as to keep programmable patterning devices, and is assigning
Substrate table WT is moved or scanned while giving the pattern of radiation beam to project on target part C.In this mode, generally use
Impulse radiation source, and during scanning substrate table WT it is each mobile after or between successive pulses of radiation, according to
Need to update programmable patterning devices.The operator scheme can be readily applied to the maskless light using programmable patterning devices
Carve, the programmable mirror array of such as the above-mentioned type.
Can also be using the combination and/or change in above-mentioned use pattern or entirely different use pattern.
In many lithographic equipments, fluid (particularly liquid) is arranged on optical projection system using liquid-supplying system IH
Between final element, to realize the imaging of smaller feature and/or increase effective NA of equipment.Further below with reference to such leaching
Do not have equipment to describe embodiments of the invention, but can equally implement in non-submerged equipment.For in the final of optical projection system
The arrangement that liquid is provided between element and substrate can be categorized as at least two total classes.These are bath type arrangement and so-called office
Portion's immersion system.In bath type arrangement, basic whole substrate and alternatively a part for substrate table is immersed in liquid bath.Office
Portion's immersion system uses liquid-supplying system, wherein liquid to be only provided to the regional area of substrate.In latter class, filled out by liquid
The space filled is in the planes less than the top surface of substrate, and the region filled with liquid keeps substantially quiet relative to optical projection system
Only, while substrate is moved below the region.The present embodiments relate to another arrangement be that the unrestricted wetting entirely of liquid is molten
Liquid.In this arrangement, the basic whole top surface of substrate and all or part of substrate table are covered in immersion liquid.Covering is extremely
The depth of the liquid of few substrate is small.The liquid can be the liquid film on substrate, such as film.
Four kinds of different types of localized liquid feed systems are illustrated in Fig. 2 to Fig. 5.Any liquid of Fig. 2 to Fig. 5 is supplied
Can be used in unrestricted system to equipment;However, seal feature and do not exist, do not activate, unlike it is normal like that it is effective or
Liquid is only effectively less sealed to regional area in addition.
One of arrangement proposed for local immersion system is that liquid-supplying system is using liquid constrained system only in lining
(substrate generally has than optical projection system to provide liquid on the regional area at bottom and between the final element and substrate of optical projection system
The bigger surface region of final element).Have been proposed that a kind of mode arranged for this discloses No.WO99/ in PCT Patent Application
Disclosed in 49504.As shown in Figures 2 and 3, moving direction ideally along substrate relative to final element, by least
Individual entrance is supplied a liquid on substrate, and is removed by least one outlet after below optical projection system.Also
It is, in element lower scan substrate, liquid and the receiving liquid at-X sides to be supplied at+X the sides of element with -X direction.
Fig. 2 schematically shows and wherein supplies liquid and by being connected to the outlet of low pressure source in element via entrance
The arrangement of the liquid is received on opposite side.Arrow below arrow diagramming above substrate W liquid flow direction, and substrate W
Head illustrates the moving direction of substrate table.In the diagram of Fig. 2, liquid is supplied along the moving direction of substrate relative to final element
Body, but it is not required to be such case.The various orientations and number of the entrance and exit being positioned at around final element are possible
, Fig. 3 illustrates an example, wherein be arranged on regular pattern around final element having four groups exported on either side
Entrance.Liquid is supplied and the arrow indicating liquid flow direction in liquid restorer.
Fig. 4 shows another immersion lithographic solution with localized liquid feed system.By optical projection system PS either sides
On two access recess supply liquid, and by from entrance radiate ground outwards arrangement multiple discrete entrance remove liquid.Enter
Mouth and outlet can be arranged therein in the plate with hole in the heart and projected bundle is projected through the plate.By optical projection system PS's
On side an access recess supply liquid and pass through optical projection system PS opposite side on it is multiple discrete outlet remove liquid
Body so that fluid film flows between optical projection system PS and substrate W.Which combination of the entrance and exit that selection is used can be with
Depending on the moving direction (another combination of entrance and exit is not activated) of substrate W.In the sectional view of Fig. 4, arrow plot
Show that liquid flows into the direction of entrance and outflow outlet.
Another arrangement having been proposed that is, there is provided the liquid-supplying system with liquid limited components, and the liquid is limited
At least a portion on the border in space of the part between the final element and substrate table of optical projection system extends.Illustrated in Fig. 5
Such arrangement.Liquid limited components are substantially static in the xy plane relative to optical projection system, but in z-direction (in optics
On direction of principal axis) there may be some relative movements.Sealing is formed between liquid limited components and the surface of substrate.In a reality
Apply in example, sealing is formed between liquid limited components and substrate surface and the sealing can be non-contact seals, such as gas
Body is sealed.Such system is disclosed in U.S. Patent Application Publication No.US 2004-0207824.
Fluid operated structure 12 includes liquid limited components, and between the final element and substrate W of optical projection system PS
Space 11 at least in part include liquid.Non-contact seals 16 to substrate W can be formed in the picture field of optical projection system
Around so that liquid is limited in the space between the final element of substrate W surface and optical projection system PS.The space is at least
Partly the fluid operated structure 12 of the final element by being located below and around optical projection system PS is formed.Liquid passes through liquid
In the space that entrance 13 enters below optical projection system and in fluid operated structure 12.Liquid can be removed by liquid outlet 13
Body.Fluid operated structure 12 can extend above the final element of optical projection system.Liquid level rises to final unit
Part top so that the buffering of liquid is provided.In one embodiment, fluid operated structure 12 has inner periphery, inside week
Boundary closely conforms to the shape of optical projection system or its final element at upper end and for example can be sphering.At bottom,
Inner periphery closely conforms to the shape of picture field, such as rectangle, but is not required to be such situation.
In one embodiment, liquid is included in the space 11 by air seal 16, during use, air seal
16 are formed between the surface of the bottom of fluid operated structure 12 and substrate W.Air seal by gas such as air, synthesize sky
Gas, N2Or another inert gas is formed.Gas in air seal is provided to fluid operated structure via entrance 15 under stress
Space between 12 and substrate W.Air is drawn via outlet 14.The vacuum in overvoltage, outlet 14 on arrangement gas access 15
Level and the geometry in space so that inwardly there is the high velocity gas stream 16 of limitation liquid.Fluid operated structure 12 and substrate W
Between liquid on gas force include the liquid in space 11.Inlet/outlet can be the annular groove around space 11.Ring
Connected in star can be continuous or discontinuous.Gas stream 16 is effectively comprising the liquid in space 11.In U.S. Patent application
Such system is disclosed in open No.US 2004-0207824.
The example of Fig. 5 is regional area arrangement, and wherein liquid is arbitrarily once only provided to the partial zones of the top surface of substrate W
Domain.Other arrangements are possible, including fluidic manipulation systems, and the fluidic manipulation systems utilize single phase extractor or two phases
Position extractor, such as disclosed in U.S. Patent Application Publication No.US 2006-0038968.
Another possible arrangement is the arrangement worked according to air resistance principle.So-called air resistance principle is for example in U.S.
In state patent application publication No.US 2008-0212046, No.US2009-0279060 and No.US 2009-0279062
Description.Within the system, drawing holes is arranged to the ideally shape with turning.Turning can be with stepping or scanning direction pair
It is accurate.Compared to the fluid operated structure with two outlets being aligned perpendicular to scanning direction, this reduce in stepping or scanning
For the power on the meniscus between two openings in fluid operated body structure surface of given speed on direction.
A kind of gas positioned with obtaining feature external radiation in bulk fluid is also disclosed in US 2008-0212046
Knife.The capture of gas knife obtains any liquid of feature by bulk fluid.Such gas knife may reside in so-called gas
Impedance concept is arranged (as disclosed in US2008-0212046), single one or two phase extractors arrangement is (such as special in the U.S.
Disclosed in the open No.US 2009-0262318 of profit application) or any other arrangement in.
The liquid-supplying system of many other types is possible.The present invention is supplied neither limited to the liquid of any particular type
To system, immersion lithographic is also not necessarily limited to.The present invention can be equally applicable in any photoetching.In EUV lithography equipment, Shu Lu
The basic vacuum in footpath and above-mentioned submergence is not used to arrange.
Control system 500 shown in Fig. 1 controls the overall operation of lithographic equipment, particularly performs what is be described further below
Optimize technique.Control system 500 may be embodied as properly programmed all-purpose computer, and the all-purpose computer includes that center treatment is single
Unit and volatibility and Nonvolatile memory devices.Can alternatively, control system may further include one or more inputs
And output equipment, such as go to the keyboard and screen of the various parts of lithographic equipment, one or more network connections and/or one
Or multiple interfaces.It is appreciated that what the one-one relationship between control computer and lithographic equipment was not required.Of the invention
In one embodiment, a computer can control multiple lithographic equipments.In one embodiment of the invention, it is possible to use many
The computer of individual networking controls a lithographic equipment.Control system 500 may be configured in control lithographic cell or cluster
One or more associated process equipments and substrate controlling equipment, lithographic equipment form a part for the lithographic cell or cluster.
Control system 500 may be configured to be subordinated to the monitoring system and/or the overall control system of factory of lithographic cell or cluster.
Fig. 6 schematically depict the EUV lithography equipment 4100 including source collector device SO.The equipment includes:
- illuminator (luminaire) EIL, is configured to regulation radiation beam B (such as EUV-radiation);
- supporting construction (such as mask platform) MT, is configured to support patterning devices (such as mask or mask) MA and connects
To the first locator PM, first locator PM is configured to position patterning devices exactly;
- substrate table (such as wafer station) WT, is configured to keep substrate (such as resist coating chip) W and be connected to second
Locator PW, second locator PW is configured to position substrate exactly;And
- optical projection system (such as reflective projection system) PS, is configured to that the pattern of radiation beam B will be assigned by patterning devices MA
Project on the target part C (such as including one or more nude films) of substrate W.
These basic modules of EUV lithography equipment are functionally similar to the corresponding component of the lithographic equipment of Fig. 1.Following
Description mainly covers different regions and omits the repeated description in terms of same components.
In EUV lithography equipment, expect to use vacuum or environment under low pressure, because gas can absorb excessive radiation.Therefore
Vacuum environment can be provided to whole beam path by means of vacuum wall and one or more vavuum pumps.
Reference picture 6, EUV luminaires EIL receives the extreme ultraviolet radiation beam from source collector device SO.For producing EUV
The method of radiation is included but is not limited to, will be with least one element using one or more emission lines in EUV range
The material of such as xenon, lithium or tin is converted into plasma state.In such a method, commonly referred to laser plasma
The plasma of (" LPP ") can by using bombardment with laser beams fuel such as have expect line transmitting element material drop,
Stream or cluster are produced.Source collector device SO can be the part for including the EUV radiation system of laser, not show in figure 6
Go out, the laser beam of fuel is excited to provide.Resulting plasma sends output radiation, such as EUV-radiation, the output radiation
It is to be collected using the radiation collector being arranged in the collector device of source.For example when using CO2Laser is provided for fuel
During the laser beam for exciting, laser and source collector device can be single entities.
In this case, laser is not qualified as being formed a part for lithographic equipment, and radiation beam by means of
Beam transmission system is delivered to source collector device from laser, the beam transmission system include for example suitable guiding crystal face and/or
Beam expander.In other cases, for example when source is plasma EUV generator (the commonly referred to DPP source) that electric discharge is produced, source
It can be the integral part of source collector device.
EUV luminaires EIL can include adjuster, and the intensity for adjusting radiation beam EB is distributed.In general, can be with
Adjust at least outer and/or interior radiation scope (be referred to as respectively σ-outer and σ-interior) of the intensity distribution in the pupil plane of luminaire.
Additionally, EUV luminaires EIL can include various other components, such as facet and pupil mirror device.EUV luminaires EIL can
For regulation radiation beam EB, to have desired uniformity and intensity distribution in its section.
Radiation beam EB is incident on patterning devices (such as mask) MA, and patterning devices MA is maintained at supporting construction (for example
Mask platform) on MT, and radiation beam EB passes through patterning devices composition.After being reflected from patterning devices (such as mask) MA, spoke
Beam EB passes through optical projection system PS, optical projection system PS to focus on the target part C of substrate W the beam.It is fixed by means of second
Position device PW and position sensor PS2 (such as interference apparatus, linear encoder or capacitive sensor), can exactly move lining
Base frame WT, for example, cause to position different target part C in the path of radiation beam EB.Similarly, the first locator PM and another
The path that one position sensor PS1 can be used for relative to radiation beam EB positions patterning devices (such as mask) MA exactly.Structure
Figure equipment (such as mask) MA and substrate W can be aligned using mask alignment mark M1, M2 and substrate alignment mark P1, P2.
Shown equipment can use the equipment identical pattern with Fig. 1.
Fig. 7 illustrates in greater detail EUV equipment 4100, including source collector device SO, EUV illumination system EIL and projection
System PS.Source collector device SO is configured and arranged such that can be kept in the encapsulating structure 4220 of source collector device SO
Vacuum environment.EUV-radiation sends plasma 4210 and can be formed by discharge plasma source.EUV-radiation can be by gas
Or steam is produced, such as Xe gases, Li steam or Sn steam, wherein creating plasma 4210 to be emitted in electromagnetic spectrum
Radiation in EUV range.For example plasma 4210 is created by causing the electric discharge of at least part of plasma for ionizing.
For effective generation of radiation, it may be necessary to which such as 10Pa's of Xe, Li, Sn steam or any other suitable gas or steam divides
Pressure.In one embodiment, there is provided the plasma of the tin (Sn) for exciting produces EUV-radiation.
The radiation that plasma 4210 sends is via optional gas shield and/or dirt trap 4230 (in certain situation
Dirt barrier or aluminium foil trap are also referred to as down) to enter collection chamber 4212 from source chamber room 4211.The gas shield and/or dirt
Trap 4230 is positioned in the opening in source chamber room 4211 or is positioned at behind the opening in the source chamber room 4211.Dirt trap
4230 can include channel structure.Dirt trap 4230 can also include the group of gas shield or gas shield and channel structure
Close.The dirt trap or dirt barrier 4230 for further pointing out herein at least include channel structure, as known in the art.
Collection chamber 4212 can include radiation collector CO, and it can be so-called grazing incidence collector.Radiation collection
Device CO has upstream radiation collector side 4251 and downstream radiation collector side 4252.Radiation through collector CO can pass through
Grating frequency spectrum filter 4240 reflects to focus on virtual origin IF.Virtual origin IF is commonly referred to intermediate focus, and source is received
Storage is arranged so that intermediate focus IF at the opening 4221 in encapsulating structure 4220 or near the opening 4221.It is empty
Intend the image that source point IF is radiation-emitting plasma 4210.
Then, through illuminator IL, illuminator IL can include facet plane of field lens equipment 422 and facet light for radiation
Pupil mirror device 424, the equipment 422 and 424 is arranged at patterning devices MA providing the angle point of desired radiation beam 421
Cloth and the desired radiation intensity uniformity at patterning devices MA.In radiation beam 421 in the structure kept by supporting construction MT
After reflection at figure equipment MA, patterned beam 426 and will be through by optical projection system PS via reflecting element 428,430 is formed
The beam 426 of composition is imaged onto on the substrate W kept by substrate platen or substrate table WT.
In showing that more elements may generally exist in optical unit IL and optical projection system PS.Depending on lithographic equipment
Type, grating frequency spectrum filter 4240 can be there can optionally be.There may be than more minute surfaces shown in figure, for example can be with
In the presence of 1 to 6 additional reflective element being present in optical projection system PS different from shown in Fig. 7.
Collector optical element CO shown in Fig. 7 is depicted as with the embedding of grazing incidence reflector 4253,4254 and 4255
Set collector, only as the example of collector (or collector minute surface).Grazing incidence reflector 4253,4254 and 4255 are axially symmetric
Be arranged in around optic axis O, and the type optical collector CO preferably with commonly referred to DPP sources electric discharge produce etc.
Plasma source is applied in combination.
Alternatively, collector device SO in source can be a part for the LPP radiating systems shown in Fig. 8.Laser LA is by cloth
It is set to laser energy deposition into fuel, such as xenon (Xe), tin (Sn) or lithium (Li), so as to create the electronics temperature with tens eV
The high ionization plasma 4210 of degree.The energy produced in the deexcitation of these ions and compound period is radiated from plasma
Send, collected and focused on the opening 4221 in encapsulating structure 4220 by nearly vertical incidence optical collector CO.
Fig. 9 depicts substrate holder according to an embodiment of the invention.It can be maintained at the recessed of substrate table WT
Fall into interior and support substrate W.The main body of substrate holder 100 has flat type, for example, be substantially corresponding in both shape and size to substrate W
Disk.Substrate holder for example can be by Si, SiC, SiSiC, aluminium nitride (AlN), zero thermal expansion coefficient devitrified glass
(Zerodur), cordierite (cordierite) or some other suitable ceramics or glass ceramic material are formed.At least in top side
On, in one embodiment on both sides, substrate holder has the protrusion 106 of commonly referred to knuckle.In one embodiment,
Substrate holder is the integral part of substrate table and does not have knuckle on the lower surface.The knuckle is not in scale in fig .9
Show.By some or all in laser sintered formation knuckle as described below.
In putting into practice embodiment at one, there may be across substrate holder distribution such as width (such as diameter) 200mm,
Hundreds of or thousands of knuckles of 300mm or 450mm, such as more than 10000 or more than 40000.The end of knuckle has small area,
For example it is less than 1mm2.Thus the gross area of all knuckles on the side of substrate holder 100 is less than the summary table of substrate holder
About the 10% of area, such as from 1% to 3%.Due to knuckle arrangement, high likelihood is likely located at substrate, substrate holder
Or any particle on the surface of substrate table will fall between knuckle and therefore will not result in the change of substrate or substrate holder
Shape.
Knuckle arrangement can form pattern and/or can have periodic arrangement.Knuckle arrangement can be rule or
Can be according to expectancy changes providing the appropriate distribution of the power on substrate W and substrate table WT.Knuckle can have in the plane appoints
Meaning shape, but it is generally circular in the plane.Knuckle can have same shape and size but generally on their whole height
It is taper.The distance that knuckle is protruded from the remainder on the surface of the main body 100a of substrate holder 100 is from about 1 μm to about
In the range of 5mm, ideally from about 5 μm to about 250 μm in the range of.The thickness of the main body 100a of substrate holder 100 can be with
In the range of about 1mm to about 50mm, ideally in the range of about 5mm to about 20mm, typically 10mm.
Advantageously, knuckle could be formed with very consistent size.It is desirable that the difference between different knuckle height is very
It is small.Short knuckle (be for example shorter than 20 μm, be shorter than 15 μm, be shorter than 5 μm, or be shorter than 3 μm) can be formed.Shorter knuckle is favourable
, because they increase the heat transfer between substrate and substrate holder.Top and substrate away from the substrate holder of knuckle
Gap between the support surface of the substrate on retainer is less than the support with bigger height.So small gap be easy to heat from
Temperature control component (such as heater) is delivered to support substrate.Minimum knuckle height by the change of the total height of pellicular cascade with
And the uneven amount of substrate and substrate holder determines.In one embodiment, knuckle is highly more than or equal to 1 μm or 2 μm.
Knuckle can have the width (such as diameter) less than or equal to 0.5mm.In one embodiment, knuckle has
Width (such as diameter) in the range of from about 200 μm to about 500 μm.Spacing between knuckle about 1.5mm to about 3mm it
Between.
Additionally, one embodiment of the present of invention allows to use the material of wider range for substrate holder.In the present invention
The material of the prior method for being unsuitable for forming knuckle or substrate holder can be used in embodiment.In one embodiment, may be used
Knuckle is formed with the material using the such as cordierite that cannot be easily processed, low CTE glass ceramics etc.Cordierite has
For the superperformance used in substrate holder.For example, cordierite has the high Young's modulus and about 4W/mK of about 140Gpa
Lower thermal conductivity.
Due to the manufacture method of stabilization, the substrate holder manufactured according to one embodiment of the invention can have length to use
Life time.Embodiments of the invention can be presented desired wearability, such as good wear resistence, and therefore present specific
The low generation rate of dirt.Advantageously, the need for one embodiment of the present of invention can avoid coated substrate retainer.
Substrate holder according to an embodiment of the invention can have the formation on a surface or two surfaces
Film assembly 110.Film assembly can have the thickness degree in the range of from about 2nm to about 100 μm.Such film assembly
There can be one or more layers.Each layer can be by including chemical vapor deposition, physical vapour deposition (PVD) (such as sputtering), leaching
The technique of stain coating, rotary coating and/or spraying is formed.In one embodiment, it is formed in the component bag on substrate holder
Pellicular cascade is included, i.e., including multiple film layers.Such component is described further below.Although being mentioned that shape in this description
Can be formed on the lower surface of substrate holder into the pellicular cascade on the top surface of substrate holder, but pellicular cascade,
Or on the substrate table below substrate holder, or on any other film of substrate table or substrate holder, including integration lining
The surface of bottom retainer and substrate table.
Include such as electrode, resistive heater and/or sensor to be formed in the electrically or electronically assembly on substrate table,
Such as (non-limiting to enumerate) strain transducer, Magnetic Sensor, pressure sensor, capacitive sensor or temperature sensor.Plus
Hot device and sensor can be used for partly controlling and/or monitoring substrate holder and/or substrate temperature.This local control
System and/or monitoring can reduce the temperature difference and stress in undesirable substrate holder or substrate or trigger desired substrate
Temperature difference and stress in retainer or substrate.It is desirable that heater and sensor be formed on mutually the same region, week
Enclose and/or top.Desired control substrate temperature and/or stress, so as to reduce or eliminate such as by substrate local expansion or
The image error of overlay errors etc caused by shrinkage.For example, in immersion lithographic apparatus, remaining immersion liquid (such as water) exists
Evaporation on substrate can cause localization cool down, can to where liquid surface apply heat load, and thus cause substrate
Contraction.Conversely, the energy for being delivered to substrate by projected bundle during exposing can cause significantly heating and therefore cause lining
The expansion at bottom.
In one embodiment, component to be formed is the electrode of electrostatic chuck.In electrostatic clamp, there is provided in substrate table
And/or the electrode on substrate holder is thus lifted to high potential, such as from 10V to 5000V.Substrate can be grounded or floated.By
Substrate is adsorbed onto substrate table and/or retainer by the electrostatic force in the electric field that electrode is produced, to provide chucking power.This enters below
One step is described.
One or more electrical connections can be provided the electrically or electronically assembly on substrate holder is connected to voltage source
(not shown for convenience).If component is electrostatic chuck, the electrode on substrate has the electrical connection for going to voltage source.Component can
With on the top surface of substrate supports.At least a portion of electrical connection can be by the main body of substrate supports, such as November 3 in 2011
The U.S. Patent application No.US 61/555 that day submits to, as described in 359, the full content of the patent is herein by quoting
It is incorporated herein.
In one embodiment, one or more local heaters 101 are controlled by controller 103, with to substrate holder
100 and substrate W provides desired heat, so as to control the temperature of substrate W.One or more temperature sensors 102 are connected to control
The temperature of device processed 104, the controller 104 monitoring substrate holder 100 and/or substrate W.In Co-pending U.S. Patent Application
Describe partly to control substrate using one or more heaters and temperature sensor in open No.US 2012-0013865
The arrangement of temperature, the full content of the document is incorporated herein by reference herein.The arrangement described in it can be changed to utilize
Capacitive character heater described herein and temperature sensor.Other of pellicular cascade including its component and its manufacture method are thin prominent
Save the U.S. Patent application No.US13/403,706 that was submitted on 2 23rd, 2012 and on April 9th, 2012 submits to it is common not
U.S. Patent application No.US 61/621 certainly, is given in 648, and the full content of above-mentioned document is incorporated herein by reference this
Text.
For the substrate holder that is used in conventional (such as DUV) lithographic equipment (such as immersion lithographic apparatus) ideally
It is provided with one or more film temperature sensors and/or one or more thin film heaters.Can be in substrate holder, lining
On the retainer of bottom and/or substrate holder lower section provides the sensor and/or heater of other forms.
Substrate holder for being used in EUV lithography equipment is ideally provided with film electrostatic chuck and optional
Or multiple film temperature sensors and/or one or more thin film heaters.Can be in substrate holder, on substrate holder
And/or substrate holder lower section provides the sensor and/or heater of other forms.
As previously described, it is possible to use laser sintered to form knuckle.The method is illustrated in Figure 10 A to Figure 10 E, and is opened
Start from the flat board of the intended shape of the main body 400 to form substrate holder.The flat board can be pre-formed by another technology.
In one embodiment, the plate is formed by SiSiC, but can use one or more of the other material such as InvarTM、
ZerodurTM、ULETM, fused silica, cordierite, boron nitride, silicon nitride, aluminium nitride (AlN) and/or SiC.Desirably, the plate
Surface 400a ground connection and/or be polished to desired planarization.In one embodiment, for example using the ozone clean table
Face, but the step can be omitted.In one embodiment, treatment surface 400a is with for example by applying bed material (primer) layer rush
Enter the adhesion of one or more subsequent layers, but the step can be omitted.Onboard, separation layer 410 is applied with will be to be formed on it
One or more metal levels of top are isolated with the main body of substrate holder.In one embodiment, separation layer 410 improves flat
Degree.Separation layer 410 can be by the BCB applied as described above by the spin coating or spraying or SiO by pecvd process applying2Or
Other suitable materials are made.On the top of separation layer, such as by PVD coating metal layer 440, to reach shown in Figure 10 A
Situation.
Then, metal level is patterned by photoetching and selective etch (such as wet etching) for example, to limit the phase
The pattern of prestige, so that expectation component is formed, such as electrode, sensor or heater.The step is also removed wherein will then walked
The metal level in the region of knuckle is formed in rapid.In the stage, substrate holder is as shown in Figure 10 B.
On metal level after patterning, coating is isolated or dielectric layer 450, and is formed in the position for expecting knuckle logical
To main body or the opening of basic unit (i.e. by both separation layers).Substrate holder is present as illustrated in figure 10 c.Alternatively, such as profit
With the exposed area 400b on the surface of ozone clean main body 400, and/or for example by the coating processing main body 400 of initial bed
The exposed area 400b on surface, to promote in the adhesion of the knuckle for subsequently forming.
Now, knuckle 406 is formed by laser sintering process in the opening by pellicular cascade.Can be parallel with knuckle
Ground forms the other structures on substrate holder, such as vacuum ring.One or more protrusions can also be formed between knuckle, this
A little protrusions are more shorter than knuckle but with bigger area.Such prominent heat transfer improved between substrate and substrate holder.
Such protrusion for example can be 10 μm or more more shorter than knuckle 406.There are two kinds of laser sintering processes, this two
The method of kind is all usable.
In first method, thin layer powder is applied to the region that will form knuckle.Then, one or more laser beams are used
Optionally to sinter wherein by the powder in the region for forming knuckle.When these are completed, apply and selectively heat and
Sinter another thin layer powder.Repeat these so that successively build knuckle.In one embodiment, each layer have from 1 μm to
Thickness in the range of 1.5 μm.Due to sintering pattern can be changed at every layer, it is possible to which building knuckle has any desired
Shape and/or section.In the method, powder can be applied over a large area while or concurrently forming multiple knuckles.
It is alternatively possible to applied to more small area and apply last and be separately formed each knuckle.The thin knuckle of other of the technique can be
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Found in sintering-a quality leap through improvement of powder packing ".
In the second approach, on the region that will form knuckle, the pulverized powder in inert gas, while or many
The exact position of individual bombardment with laser beams knuckle to be formed.Powder is selectively adhered to the position of bombardment with laser beams.By appropriate
Ground displacement radiant, can build the knuckle for expecting section.The thin knuckle of other of the technique can be in http://
It is public at laz.htwm.de/43_rapidmicro/55_Ver%C3%B6ffentlichungen/Mic ro clad 10.pdf
In " the MICRO-CLADDING USING A PULSED FIBRE LASER AND SCANNER " of the S.Kloetar for opening et al.
Find.
It is laser sintered to be worked by partly melted powder particle on other sintering technologies so that they are in cooling
When adhere to each other.Laser sintered to have an advantage in that, the controlled applying of laser beam allows to carry out the place for sintering
Space controls.In above-mentioned two method, powder can be pre-heated to the temperature close to relative melt points so that need laser beam
Apply less energy to complete sintering.Various materials can be used in sintering technology.Powder can be by single material
Material is formed, such as metal of such as titanium etc, the semiconductor of such as silicon etc or such as fused silica, cordierite and/or nitridation
The ceramics of aluminium etc.In one embodiment, powder is made up of two or more components.A kind of component has relatively low melting
Point, it is melted the matrix that another particulate constituent is wherein embedded in be formed.The matrix of powder forms component and can be provided as individually
Particle or another material particle on coating.It can be any one in above-mentioned homogenous material that matrix forms compound.
Particulate constituent can select one or more components such as the following group, and the group includes cubic boron nitride, silicon nitride, carborundum, nitrogen
Change titanium, titanium carbide and/or diamond, such as diamond-like-carbon (DLC).Sintering process can be held in inert atmosphere or vacuum
OK, to help prevent the chemical change of sintering or the material in controlled atmosphere, to promote chemical change.
Therefore, it is possible to the material by knuckle is formed is selected from broad range of material, to provide desired characteristic, such as
To the adhesion strength of the matrix material of substrate holder.Desirably, knuckle is by the material of main part identical material with substrate holder
Material is made or is made by with the compatible material of the material of main part of substrate holder.Often, for example, it is desirable to knuckle is fully bonded
To the base material of substrate body, to provide the life-span in use and robustness.In some applications, it may be desirable to knuckle have it is highly thermally conductive
Rate is with the temperature adjustment of additional substrate.In other applications, lower thermal conductivity can be desired, so as to isolation liner bottom.Can lead to
Cross material selection realize other about characteristic knuckle include electric conductivity, dielectric strength and wearability.
Laser sintering technology for forming knuckle typically results in the roughened upper surface of knuckle as shown in fig. 10d.If
So, then expect to perform final polishing step so that provide smooth upper surface to the knuckle shown in Figure 10 E.In some cases,
If for example performing final polishing using coarse grain lapping liquid, may expect first with additional coatings protective film lamination.So
And, this is not usually necessary, such as in the case where pellicular cascade is only comprising the electrode being used for gripping purposes.
Another advantage of laser sintering process is that it allows the composition of knuckle to change on its height.Therefore can make
Make layer or partial knuckle with one or more heterogeneities and/or characteristic as shown in figure 11.For example, the bottom of knuckle
406a can be formed by the material of the intact matrix material for being bonded to substrate holder, and the top 406b of knuckle is by for example having
The material of the wearability of improvement is formed.(noting, it is possible to use the technologies different from knuckle are made matrix) is for example, can be in knuckle
Top 406b include the particle of the such as diamond of diamond-like-carbon (DLC) etc with improve wearability.Alternatively, Buddha's warrior attendant
Stone particle (such as DLC) can be included in the 406a of bottom to improve thermal conductivity.In one embodiment, knuckle is formed with and is more than
The discrete layers of two.In one embodiment, knuckle is formed through at least a portion of its height in composition, content or material
Being changed stepwise in characteristic.
Can also change the composition of the powder for sintering in the surface direction that is substantially parallel formed with knuckle.In sintering
Powder layer method in, this can be realized by changing the composition of powder in the every layer of powder for applying.In powderject side
In method, this synchronously can change the composition of pulverized powder to realize by the traveling time with laser emission point.Alternatively remove
Outside change in short transverse, the material composition that knuckle is changed in the formed surface direction that is substantially parallel can be permitted
Perhaps knuckle one or more machinery and other characteristics such as rigidity on precise controlling.
The advantage of the embodiment of the present invention is that knuckle could be formed with almost arbitrary shape in three directions.At one
In embodiment, knuckle has constant cross-section on its whole height.In one embodiment, master of the knuckle away from substrate holder
Body ground possibly tapered.In one embodiment, the section of knuckle is with height change.In one embodiment, knuckle has and substrate
The substantially parallel section of the body surfaces of retainer, the section is selected from includes circular, square, rectangle, ellipse, rhombus and " race
The group in road " or " stadium " shape." runway " or " stadium " shape has two by curve (such as semicircle) engagement
Straight parallel sides.
In one embodiment, only pellicular cascade is provided on the side of substrate holder.In one embodiment, in lining
There is provided without pellicular cascade on the retainer of bottom.In one embodiment, pellicular cascade is provided on the both sides of substrate holder.One
In individual embodiment, knuckle is provided on the both sides of substrate holder.If providing knuckle on the both sides of substrate holder,
It is not required using the same procedure for forming knuckle on both sides.
In the case where the controlled exposure between apparatus assembly and object to be manipulated is expected, implementation of the invention can be used
Example on other components in the lithographic apparatus forms knuckle.
Figure 12 shows this hair as the supporting construction (such as supporting the mask table MT of mask MA) for patterning devices
Bright embodiment.It is contrasted with substrate table, the main body 500 of mask platform is provided with through hole 501, for passing through for projected bundle B.Mask
MA is supported by by the laser sintered knuckle region 502 formed in mask platform 500.Mask MA is supported to have and make using knuckle
With the similar function of the substrate on knuckle support substrate platform or retainer.For example, knuckle can prevent or reduce mask due to
There is particle and misalignment or the chance of distortion between the surface of mask and support mask.Knuckle can allow use vacuum and/or
Mask is clamped to mask platform or other supporting constructions by electrostatic clamp technology.Due in most of lithographic equipment, optical projection system
PS reduces the factor of projected image 4 or 5, in the scan pattern of operation, under big 4 or 5 times of speed and acceleration than substrate table
Mobile mask.Therefore, quite bigger chucking power should be applied.Desirably, with so that not producing in the mask or producing minimum answering
The mode of power keeps mask on the support structure.The use of knuckle can aid in the purpose.
In fig. 12, show that knuckle is provided in the separate areas of the either side in aperture 501.In one embodiment, may be used
In the continuum entirely around aperture or providing provide knuckle in multiple positions for separating around aperture.Can be in reality
Apply the exact position of determination knuckle in the construction of example.It is used to support the knuckle of mask for example in mask platform or mask controlling equipment
Can have the diameter from 100 μm to 1 μm, preferably 300 μm to 500 μm.Knuckle can have elongated shape in the planes, all
Such as oval or rectangle.
In one embodiment, by laser sintered formation knuckle on the clip of mask or mask.The clip can be with
It is the hierarchy of such as ULE-Zeodur-ULE or pellicular cascade-Zerodur- pellicular cascades.Such clip can have
The thickness of about 10mm.Knuckle can have the spacing from 2mm to 10mm.
Figure 13 depicts the supporting construction of patterning devices according to embodiments of the present invention, such as mask or mask in the planes
Version.Figure 14 depicts the same support structure in the section along the line XX of Figure 13.Supporting construction includes support member 512, passes through
Leaf spring 513 supports the support member 512 on main body 510.The upper surface of support member 512 has by the region of knuckle 106
Around central concave 515.Central concave 515 is connected to low pressure (such as vacuum) source 517 via conduit 516.
In the patterning devices of such as mask MA etc are placed in support member 512 and reduce central concave 515
During pressure, patterning devices are safely clamped in the original location.By means of leaf spring 513, fully limit support member 512 with composition
Position on the substantially vertical direction in the surface of equipment MA.However, support member 512 is allowed in the surface base with patterning devices MA
This at least one parallel side moves up.This means it assists in ensuring that no appearance or appearance are minimum in patterning devices MA
Stress.Such stress is undesirable, because they may make the pattern distortions that patterning devices MA is limited.By laser sintered
Setting of the knuckle 106 of formation in support member 512 is assisted in ensuring that and is accurately positioned patterning devices MA.
Figure 15 illustrates substrate conveying arm according to an embodiment of the invention or clamper 600.Substrate conveying arm 600
Determined by one or more actuator (not shown).Substrate conveying arm 600 be used for for example loading storehouse and prealignment platform between,
Substrate is transmitted between prealignment platform and substrate table and/or between substrate table and unloading storehouse.In the track of lithographic cell
(track) using similar conveying equipment, or patterning devices (example can be moved using similar conveying equipment in part
Such as mask).Substrate conveying arm 600 is included in horizontal plane paired finger piece spaced intermediate or sharp shaped material (prong)
601.Upper surface of each sharp shaped material 601 or part thereof is provided with the region 602 with the knuckle by laser sintered formation.
Can be with one or more advantages in advantage same as described above, it is, for example real using knuckle on substrate conveying arm
The use of existing vacuum and/or electrostatic clamp technology and/or prevent the particulate from distort substrate.
Figure 16 shows wherein substrate holder of the invention and substrate table WT integrated one embodiment.Retainer WT has
Main body 700, being formed with main body 700 in it can accommodate the depression 701 of substrate W.The lower surface of depression 701 is provided with by upper
State the knuckle 106 of laser sintered formation.It is determined that the height of the depth of depression 701 and knuckle 106, to assist in ensuring that substrate W's is upper
Surface is substantially coplanar with the upper surface of main body 700.In this way, due to that will perform to the exposure on substrate W, so being arranged on lining
One or more sensors of such as transmission imageing sensor TIS in base frame WT can enter in essentially identical upright position
Row measurement.
The advantage of the embodiment of the present invention is, can be on than the wider surface of method of previously known formation knuckle
Reliably and accurately form knuckle.Therefore, it is possible to set on the component of knuckle prominent would prove unsuitable for be set by previous technology
Section, such as previous technology such as material removal technique, electro-discharge machining (EDM).
Another advantage is that method described herein can individually or synthetically be used to repair knuckle.It is described below
The two methods of reparation knuckle according to embodiments of the present invention.These methods can be used for repairing by dashing forward that any means are formed
Section, without the knuckle simply by laser sintered formation.
In restorative procedure according to embodiments of the present invention, each knuckle is repaired, this is illustrated in Figure 17 A to Figure 17 C
The step of method.As shown in Figure 17 A, object retainer 800 has multiple knuckles 801 and damages knuckle 802.Damage knuckle 802
With the roughened upper surface 802a for for example being caused by abrasion or physical damage.Damage knuckle further to grind downwards, to provide such as
Smooth surface 802b shown in Figure 17 B.Interim protective coating can be provided during the technique to cover unmarred knuckle
801.If desired, lapped face 802b can be carried out into pre- place for example using ozone clean and/or for example by applying bed material
Reason.Next knuckle is reconstructed into its original-shape and/or height using laser sintering technology as described above (or different uncommon
Hope shape and/or height).This can be related to by the knuckle 803 of reparation be built into higher than final design height height and to
The horizontal plane of the polished back height that knuckle 801 is not damaged to matching, as shown in Figure 17 C.
In another restorative procedure, while the step of repairing the multiple knuckles 901 on object retainer 900, the method exists
Describe in Figure 18 A to Figure 18 C.The periodicity that the method is particularly well-suited to object retainer is restored, to consider abrasiveness, rather than
Solve the isolated cases for damaging.The method can be used for adjusting the height of knuckle with the operating parameter for adapting to change, for example, treat
The thickness change of the substrate of exposure.
In the method for the present embodiment, the upper surface of the knuckle 901 shown in Figure 18 A alternatively for example can be entered using ozone
Row cleaning is for example prepared by applying bed material.Then by laser sintering process as described above, on knuckle 901
Build extra play 902.In one embodiment, extra play 902 has thickness of the scope from 1 μm to 5 μm, preferably 2 μm to 3
μm.In most cases, this will provide the roughened upper surface 902a shown in Figure 18 B, and it is in higher than the finally expectation of knuckle
On the height of Du Genggao.Then to polished back knuckle providing expectation flatnesses and expectation of the top surface 902b on Desired Height
Roughness, as shown in figure 18 c.
Direct benefit except providing the method for repairing knuckle, that is, damaging component does not always need to replace, recovery technique
In the presence of enabling to knuckle to be formed directly on following component, for the component, in the event for damaging one or more knuckles
To not expect economically to replace the component.
Embodiments of the invention are implemented advantageously in and knuckle are used on the component of lithographic equipment, the component such as substrate table,
Place in supporting construction, mask platform, chip control device, mask control device, clamper, prealignment platform, the track of patterning devices
Reason equipment, substrate Manipulation of the machine people, adjustable plate, substrate adjustment unit and/or sensor base.No matter object will keep or install
Accurate location where, can be set using the knuckle of manufacture according to embodiments of the present invention, the object such as substrate, composition
Standby, optical element or sensor.May be mounted at the sensor on the knuckle of formation according to embodiments of the present invention can include passing
Defeated imageing sensor and/or interference gap sensor.
The advantage of the embodiment of the present invention is, it can be than the subtractive process technology of such as electro-discharge machining etc more accurately shape
Into knuckle.Using embodiments of the invention, knuckle can be reliably and accurately formed.That loses in a manufacturing process or damage appoints
Meaning knuckle can easily be added or repaired.In embodiment, master can be made by the technology different from the knuckle for being formed thereon
Body.
As will be recognized, the arbitrary characteristics in features described above can be used together with any other feature, and
Not exclusively those combinations being expressly recited of the application covering.
Although lithographic equipment use in ic manufacturing can be specifically related to herein, it will be appreciated that, retouch here
The lithographic equipment stated can have has minute yardstick or the other application even in the component of nanoscale features in manufacture, all
Such as magnetic domain memory, flat-panel monitor, liquid crystal display (LCD), the integrated optics system of film magnetic head, guidance and inspection
The manufacture of survey pattern.It would be recognized by those skilled in the art that in the context of this alternative application, can be by term " chip "
Or " nude film " it is any synonymous with more generic term " substrate " or " target part " respectively using being thought of as.Substrate described herein
Can before exposure or after, for example (work of the resist of resist layer and exposure of developing typically is coated to substrate in track
Tool), processed in measurement facility and/or checking tool.Under applicable circumstances, the disclosure herein goes for this
Sample and other substrate processing tools.Furthermore, it is possible to by substrate processing repeatedly, such as to create multilayer IC, so herein
The term substrate for using can also refer to the substrate of included multiple process layers.
Terms used herein " radiation " and " beam " cover all types of electromagnetic radiation, including ultraviolet (UV) radiation
(such as with the wavelength of about 365nm, 248nm, 193nm, 157nm or 126nm).
Under where the context permits, term " lens " may refer to various types of optical modules any one or
Any combination, including refraction and reflection optical module.
Although the particular embodiment of the present invention is described above, it will be appreciated that except aforesaid way, can with
The present invention for otherwise implementing apparatus operation method form at least described here.For example, at least apparatus operation method form
The embodiment of the present invention can using the machine readable instructions comprising one or more sequences one or more computer programs
Or the shape of the data storage medium (such as semiconductor memory, disk or CD) of this computer program that is wherein stored with
The method that the machine readable instructions of formula, said one or multiple sequences describe aforesaid operations equipment.Additionally, the machine readable instructions
Can be realized in two or more computer programs.Two or more computer programs can store it is one or more not
With on memory and/or data storage medium.
When reading this by one or more computer processors at least one component of lithographic equipment
Or during multiple computer programs, any controller described herein can be operated alone or in combination.Controller can individually or
Have in combination for receiving, process and sending signal any suitable configuration.One or more multiprocessors be configured to
At least one of controller communicates.For example, each controller can include for perform computer program one or more
Processor, the computer program includes the machine readable instructions for aforesaid operations device, method.Controller can include being used for
Store the data storage medium of this computer program and/or be used to receive the hardware of this medium.So controller can be with root
Operated according to the machine readable instructions of one or more computer programs.
It is (such as straight that embodiments of the invention go for the width with 300mm or 450mm or any other sizes
Footpath) substrate.
No matter immersion liquid is set only in the local surface areas of substrate in bath form, substrate is still not only restricted to
And/or on substrate table, one or more embodiments of the invention may be suitable for any immersion lithographic apparatus, particularly above-mentioned
Those types, but it is not excluded for other types.In unrestricted arrangement, immersion liquid can be on substrate and/or the surface of substrate table
Upper flowing, so substrate table and/or the basic of substrate entirely do not cover surface wet.In such not limited immersion system,
Liquid-supplying system can not limit immersion liquid, or can provide the ratio that immersion liquid is limited, but substantially imperfect limit
Immersion liquid processed.
Answer broad interpretation expected liquid-supplying system here.In a particular embodiment, it can be provided the liquid into
The mechanism of the structure in space between optical projection system and substrate and/or substrate table is combined.It can include providing liquid
To one or more structures in the space, one or more liquid inlets, one or more gas accesses, one or more gas
Body outlet and/or the combination of one or more liquid outlets.In one embodiment, the surface in space can be substrate and/or
A part for substrate table, or the surface in space can be completely covered the surface of substrate and/or substrate table, or the space can be with
Encapsulating substrate and/or substrate table.Liquid-supplying system can alternatively further include for control liquid position, quantity,
One or more elements of quality, shape, flow velocity or any other feature.
In the first aspect of the present invention, there is provided have a kind of manufacture for the object retainer that uses in the lithographic apparatus
Method, the method includes:Main body with surface is provided;And forming multiple knuckles on said surface, the knuckle is from institute
State surface to protrude and with the end surfaces of support object, wherein forming at least a portion of at least one knuckle of the knuckle
Including laser sintered.
It is laser sintered to include:Apply powder bed to the surface;And optionally radiated using radiation beam described
Powder bed, to cause at least part of melting of the powder at radiation position.In one embodiment, it is laser sintered can be with
Including:Radiation position on said surface;And at the radiation position pulverized powder.
Main body can be formed by the material different from least one knuckle.At least one knuckle can include selected from include with
Under group at least one material:Ti, Si, quartz, cordierite, diamond-like-carbon, SiC, SiO of fusing2, AlN, TiN and
CrN.At least one knuckle is formed by host material and the particle being embedded in the host material.Host material can include choosing
From including at least one material in following group:Ti, Si, quartz, cordierite, diamond-like-carbon, SiC, SiO of fusing2、
AlN, TiN and CrN.Particle can be included selected from least one material included in following group:Cubic boron nitride, silicon nitride,
Carborundum, titanium nitride, titanium carbide and diamond.
At least one knuckle can include the ground floor of the first material and the second layer of the second material, and second material is not
It is same as first material.First material and second material can be different in property or component.
In one embodiment, described pair as if substrate or patterning devices.Pellicular cascade is set on said surface, it is described
Multiple knuckles are further protruded compared with the pellicular cascade from the surface.
In the second aspect of the present invention, there is provided there is a kind of object with knuckle repaired for using in the lithographic apparatus
The method of retainer, the method includes:Prepare knuckle to be repaired;Apply material to knuckle to be repaired by laser sintered
Layer;And polish the material layer.
It is described in the third aspect of the present invention, there is provided have a kind of object retainer for using in the lithographic apparatus
Object retainer includes:Main body with surface;And multiple knuckles, set on said surface and with support object
End surfaces, wherein at least one of knuckle at least a portion is by laser sintered formation.
In one embodiment, main body is formed by the different materials of the part with knuckle.At least one knuckle includes being selected from
At least one material in including following group:Ti, Si, quartz, cordierite, diamond-like-carbon, SiC, SiO of fusing2、AlN、
TiN and CrN.At least one knuckle is formed by host material and the particle being embedded in the host material.Host material can be with
Including selected from least one material in including following group:Ti, Si, fusing quartz, cordierite, diamond-like-carbon, SiC,
SiO2, AlN, TiN and CrN.Particle can be included selected from least one material included in following group:Cubic boron nitride, nitrogen
SiClx, carborundum, titanium nitride, titanium carbide and diamond.
At least one knuckle can include the ground floor of the first material and the second layer of the second material, and second material is not
It is same as first material.First material and second material can be different in property or component.At least one dashes forward
Section can have the substantially invariable section substantially parallel with surface.At least one knuckle may be located remotely from the surface possibly tapered.Extremely
A few section for being basically parallel to the surface of knuckle can be selected from includes following group:Circular, square, rectangle, ellipse,
Rhombus and " runway " or " stadium " shape.Main body can be included selected from least one material included in following group:Crystallite
Glass, cordierite, SiC, SiSiC, AlN, invar, ceramics and glass ceramics.
Object retainer is constructed and arranged to support as object selected from following at least one:Substrate, patterning devices,
Sensor and optical element.As if substrate and object retainer is substrate holder in one embodiment, pair.Substrate keeps
Device can have the diameter of substantially equal to 200mm, 300mm or 450mm.Object can be patterning devices, and object retainer
It is the supporting construction of patterning devices.Object retainer can be mask clamp bar.Object retainer can be substrate holder.Film
Lamination can be set on the surface, and multiple knuckles are further protruded from the surface compared with pellicular cascade.
In the fourth aspect of the present invention, there is provided have a kind of lithographic equipment, including:Supporting construction, is configured to support composition
Equipment;Projection system, is arranged to be projected on substrate by the beam of the patterning devices composition;And substrate holder, cloth
The holding substrate is set to, the substrate holder is the substrate holder of feature according to a third aspect of the present invention.
Lithographic equipment can include substrate table, and wherein substrate holder is integrated into substrate table.
In the fifth aspect of the present invention, there is provided have a kind of platform for using in the lithographic apparatus, this includes:It is main
Body, with surface;Multiple knuckles, on a surface and with the end surfaces of support object such as substrate, wherein knuckle is logical
Cross laser sintered formation.
In the sixth aspect of the present invention, there is provided have a kind of lithographic equipment, including:Supporting construction, is configured to support composition
Equipment;Projection system, is arranged to be projected on substrate by the beam of the patterning devices composition;And according to the present invention the 5th
The platform of aspect.
In the seventh aspect of the present invention, there is provided there is a kind of device making method of use lithographic equipment, the method includes:
Substrate is maintained at while on substrate holder, will be projected on substrate by the beam of patterning devices composition, wherein substrate is protected
Holder includes:Main body with surface;And there are multiple knuckles of the end surfaces of support substrate than the past on a surface, its
Middle knuckle is by laser sintered formation.
Above description is intended to diagram, and is not limited.Thus, it will be appreciated by one of skill in the art that, can be with
In the case of without departing from the scope of the claim being listed below, the present invention is modified.
Claims (15)
1. a kind of method manufactured for the object retainer for using in the lithographic apparatus, methods described includes:
Main body with flat surfaces is provided;And
Multiple knuckles are formed on the flat surfaces, the knuckle is protruded and with support object from the flat surfaces
End surfaces, wherein at least a portion for forming at least one knuckle of the knuckle include it is laser sintered, and described at least one
Individual knuckle includes the ground floor of the first material and the second layer of the second material, and second material is different from first material,
And at least one knuckle is formed through at least a portion of its height in composition, content or material property progressively
Change.
2. method according to claim 1, wherein it is described it is laser sintered including:
Apply powder bed to the flat surfaces;And
The powder bed is optionally radiated using radiation beam, to cause at least partly molten of the powder at radiation position
Melt.
3. method according to claim 1, wherein it is described it is laser sintered including:
Radiation position on said surface;And
The pulverized powder at the position for being radiated.
4. method according to claim 1, wherein the main body is formed by the material different from least one knuckle.
5. method according to claim 1, wherein the main body is formed by with least one knuckle identical material.
6. the method according to any one in claim 1 to 5, wherein at least one knuckle include it is following selected from including
Group at least one material:Ti, Si, fusing quartz, cordierite, diamond-like-carbon, SiC, SiO2, AlN, TiN and
CrN。
7. the method according to any one in claim 1 to 5, wherein at least one knuckle is by host material and insertion
Particle in the host material is formed.
8. the method according to any one in claim 1 to 5, wherein first material and second material are in property
Or in component be different.
9. the method according to any one in claim 1 to 5, wherein the object is substrate or patterning devices.
10. the method according to any one in claim 1 to 5, wherein pellicular cascade is set on said surface, it is described many
Individual knuckle is further protruded compared with the pellicular cascade from the surface.
A kind of 11. object retainers for using in the lithographic apparatus, the object retainer includes:
Main body with flat surfaces;And
Multiple knuckles, are set on said surface and with the end surfaces of support object,
At least a portion of at least one knuckle of wherein described knuckle by laser sintered formation, and described at least one prominent
Section includes the second layer of the ground floor of the first material and the second material, and second material is different from first material, and
At least one knuckle is formed through progressively change of at least a portion of its height in composition, content or material property
Change.
12. object retainers according to claim 11, wherein the object retainer is configured and arranged to support conduct
The object selected from following at least one:Substrate, patterning devices, sensor and optical element.
The 13. object retainer according to claim 11 or 12, wherein pellicular cascade is set on the flat surfaces, institute
Multiple knuckles are stated further to be protruded from the flat surfaces compared with the pellicular cascade.
14. object retainers according to claim 11, wherein the object retainer be at least it is following in one kind:Lining
The substrate holder at bottom;The supporting construction of patterning devices;The mask clamp bar of mask;Or the substrate holder of substrate.
A kind of 15. lithographic equipments, including:
Supporting construction, is configured to support patterning devices;
Projection system, is arranged to be projected on substrate by the beam of the patterning devices composition;And
Substrate holder, is arranged to keep the substrate, and the substrate holder is substrate holder according to claim 14.
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261594857P | 2012-02-03 | 2012-02-03 | |
US61/594,857 | 2012-02-03 | ||
US201261621648P | 2012-04-09 | 2012-04-09 | |
US201261621660P | 2012-04-09 | 2012-04-09 | |
US61/621,648 | 2012-04-09 | ||
US61/621,660 | 2012-04-09 | ||
PCT/EP2013/050826 WO2013113569A1 (en) | 2012-02-03 | 2013-01-17 | Substrate holder and method of manufacturing a substrate holder |
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CN201811325912.0A Pending CN109254501A (en) | 2012-02-03 | 2013-01-17 | Substrate support, lithographic equipment, device making method and the method for manufacturing substrate holder |
CN201380007834.9A Active CN104081285B (en) | 2012-02-03 | 2013-01-17 | The method of substrate holder and manufacture substrate holder |
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